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arXiv 1002.0685cond-mat.mes-hall
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整数量子化霍尔效应相互作用理论中的无序效应

The effect of disorder within the interaction theory of integer quantized Hall effect

S. E. Gulebaglan, G. Oylumluoglu, U. Erkarslan, A. Siddiki, I. Sokmen

摘要:

本文在屏蔽理论的基础上,系统地研究了无序对整数量子化霍尔效应的影响。考虑到潜在的波动范围的无序势进行了分析。单杂质势的短程部分用于定义自洽玻恩近似内的电导率张量元素,而长程部分在Hartree水平自洽处理。使用简单的,但是,基本的费米子-费米屏蔽,我们发现,长程无序势被很好地屏蔽。而短程部分几乎不受屏蔽的影响,并且适合于定义消失磁场处的迁移率。根据这些范围的依赖关系,我们讨论了量子化霍尔平台的延伸考虑“流动性”的晶片和样品的宽度,通过重新制定欧姆定律在低温和高磁场。我们发现,平台宽度主要取决于无序的长程涨落,而态密度展宽的重要性不太明显,甚至被显著抑制。这些结果与传统的单粒子图像形成了强烈的对比。我们发现量子化霍尔平台的宽度随着无序度的增加而增加,而能级展宽可以忽略不计。

英文摘要:

We study effects of disorder on the integer quantized Hall effect within the screening theory, systematically. The disorder potential is analyzed considering the range of the potential fluctuations. Short range part of the single impurity potential is used to define the conductivity tensor elements within the self-consistent Born approximation, whereas the long range part is treated self-consistently at the Hartree level. Using the simple, however, fundamental Thomas-Fermi screening, we find that the long range disorder potential is well screened. While, the short range part is approximately unaffected by screening and is suitable to define the mobility at vanishing magnetic fields. In light of these range dependencies we discuss the extend of the quantized Hall plateaus considering the "mobility" of the wafer and the width of the sample, by re-formulating the Ohm's law at low temperatures and high magnetic fields. We find that, the plateau widths mainly depend on the long range fluctuations of the disorder, whereas the importance of density of states broadening is less pronounced and even is predominantly suppressed. These results are in strong contrast with the conventional single particle pictures. We show that the widths of the quantized Hall plateaus increase with increasing disorder, whereas the level broadening is negligible.

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