量子化霍尔效应的相互作用介导的不对称性
Interaction mediated asymmetries of the quantized Hall effect
摘要：
本文对栅控窄霍尔栅中的整数量子化霍尔效应进行了实验和理论研究。在低电子迁移率下，经典（高温）霍尔电阻线RH（B）穿过所有霍尔平台的中心。相反，对于我们的高迁移率样品，在偶数填充因子ν= 2; 4.明显地移向更大的磁场B。这种不对称性与屏蔽理论的预测是一致的。e.考虑到库仑相互作用。所观察到的效果是直接相关的霍尔酒吧不可压缩的条带的形成。发现在ν= 1处的自旋分裂平台几乎是对称的，与迁移率无关。我们在所谓的有效g模型中解释了这一点。
英文摘要：
Experimental and theoretical investigations on the integer quantized Hall effect in gate defined narrow Hall bars are presented. At low electron mobility the classical (high temperature) Hall resistance line RH(B) cuts through the center of all Hall plateaus. In contrast, for our high mobility samples the intersection point, at even filling factors ν= 2; 4 ..., is clearly shifted towards larger magnetic fields B. This asymmetry is in good agreement with predictions of the screening theory, i. e. taking Coulomb interaction into account. The observed effect is directly related to the formation of incompressible strips in the Hall bar. The spin-split plateau at ν= 1 is found to be almost symmetric regardless of the mobility. We explain this within the so-called effective g-model.
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