解理边生长样品中IQHE的边-体转变：基于屏蔽理论的实验方案
Edge-to-bulk transition of the IQHE at cleaved edge overgrown samples: a screening theory based experimental proposal
摘要：
在这项工作中，我们利用屏蔽理论的整数量子化霍尔效应（QHE）的不可压缩带的形成及其对整体电阻的本质影响的基础上的调查结果，并提出了一定的实验条件下观察的体边缘过渡的QHE的唯象模型。我们提出了一个霍尔酒吧的设计上劈开的边缘过度生长的晶圆，这使我们能够操纵边缘电位轮廓从光滑到非常尖锐。对于一个特定的样品设计，并通过一个垂直于二维电子系统（2DES）的侧门的帮助下，它示出的平台宽度可以改变，甚至消失时，改变边缘电位分布。这种控制的边缘电位意味着奇特的运输结果时，考虑屏蔽理论，其中包括直接库仑相互作用明确。我们认为，这些实验将为QHE的理解提供新的线索。
英文摘要：
In this work, we exploit the findings of the screening theory of the integer quantized Hall effect (QHE) based on the formation of the incompressible strips and its essential influence on the global resistances and propose certain experimental conditions to observe the bulk to edge transition of the QHE in a phenomenological model. We propose a Hall bar design on a cleaved edge overgrown wafer, which allows us to manipulate the edge potential profile from smooth to extremely sharp. For a particular sample design and by the help of a side gate perpendicular to the two dimensional electron system (2DES), it is shown that the plateau widths can be changed and even made to vanish when changing the edge potential profile. Such a control of the edge potential implies peculiar transport results when considering the screening theory, which includes direct Coulomb interaction explicitly. We think that, these experiments will shed new light on the understanding of the QHE.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
