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arXiv 1009.5151cond-mat.mes-hallcond-mat.mtrl-sci
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单层和少层石墨烯的热传导

Heat Conduction across Monolayer and Few-Layer Graphenes

Yee Kan Koh, Myung-Ho Bae, David G. Cahill, Eric Pop

摘要:

我们报告了典型的石墨烯晶体管接触的Au/Ti/石墨烯/SiO2界面(石墨烯层1 < n < 10)的热导率G。我们发现G ~ 25 MW m-2 K-1在室温下,四倍小于金/钛/二氧化硅界面的热导率,即使当n = 1。我们将这种减少归因于Au/Ti/石墨烯和石墨烯/SiO2界面串联作用的热阻。从50 < T < 500 K的G的温度依赖性也表明,热主要由声子通过这些界面进行。我们的研究结果表明,金属接触不仅可以限制电传输,还可以限制亚微米石墨烯器件的散热。

英文摘要:

We report the thermal conductance G of Au/Ti/graphene/SiO2 interfaces (graphene layers 1 < n < 10) typical of graphene transistor contacts. We find G ~ 25 MW m-2 K-1 at room temperature, four times smaller than the thermal conductance of a Au/Ti/SiO2 interface, even when n = 1. We attribute this reduction to the thermal resistance of Au/Ti/graphene and graphene/SiO2 interfaces acting in series. The temperature dependence of G from 50 < T < 500 K also indicates that heat is predominantly carried by phonons through these interfaces. Our findings indicate that metal contacts can limit not only electrical transport, but also thermal dissipation from sub-micron graphene devices.

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