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arXiv 1903.09899cond-mat.mes-hallcond-mat.mtrl-sci
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石墨烯-石墨烯层间导电的原位退火效应

An In-situ Annealing effect of Graphene-Graphene Interlayer Conduction

Jothiramalingam Kulothungan, Manoharan Muruganathan, Hiroshi Mizuta

摘要:

报道了扭曲双层石墨烯的层间距调制。这是通过原位退火技术实现的。基于实验结果,报道了SiO2表面扭曲双层CVD石墨烯系统真空和氢气退火效应的转变。在扭曲双层器件中观察到非相干层间导电。原位退火有效地去除了石墨烯-石墨烯界面中的残留物并增强了层间导电性。我们证明了石墨烯-石墨烯层间电阻在5 K下由磁铁矿的顺序调制。我们还报道了在大气压下,使用栅压依赖电阻作为温度的函数,分子氢在石墨烯夹层上的行为。据观察,在氢气/氩气环境中的层间传导降低。结果表明,石墨烯-石墨烯结的层间距离的调制,如通过输运测量研究所确定的。总的来说,这一结果导致了使用扭曲双层石墨烯制造电可调器件的可能性。

英文摘要:

An interlayer distance modulation in twisted bilayer graphene is reported. This is achieved by an in-situ annealing technique. The transformation of systematic vacuum and hydrogen annealing effects in twisted bilayer CVD graphene on SiO2 surface is reported based on experimental results. Incoherent interlayer conduction is observed in the twisted bilayer device. In-situ annealing efficiently removes the residues in the graphene-to-graphene interface and enhances the interlayer conduction. We demonstrate graphene-to-graphene interlayer resistance modulated by an order of magnetite at 5 K. We also report on the behavior of molecular hydrogen on graphene interlayer using the gate voltage-dependent resistance as a function of temperature at atmospheric pressure. It was observed that interlayer conduction in hydrogen/argon gas ambient is reduced. Results imply that modulation in the interlayer distance of graphene-to-graphene junction, as determined by the transport measurement investigation. Overall this result leads to the possibility of making electrically tunable devices using twisted bilayer graphene.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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