AI 中文总结
研究了用Janus单层插入双层石墨烯，通过第一性原理计算等方法，发现能诱导面内Rashba自旋纹理层选择性开关，可独立控制自旋电流方向，为门可调、层选择性自旋电子器件提供了有前途的平台。
AI 中文摘要
我们预测，用非磁性WSSe或磁性MnSSe Janus单层插入双层石墨烯会引起面内Rashba自旋纹理的层选择性开关，导致顶部和底部石墨烯层中自旋电流方向相反。第一性原理计算表明，两种Janus单层都使两个石墨烯层解耦，同时在每个层中诱导出相反符号的近邻诱导Rashba自旋轨道耦合。对近邻层的紧束缚建模，结合Rashba-Edelstein电荷到自旋转换计算，证实了通过对顶部或底部石墨烯层进行门控，可以独立控制自旋电流方向。因此，由Janus单层插入的双层石墨烯是用于门可调、层选择性自旋电子器件的有前途的平台。
英文摘要
We predict that intercalating bilayer graphene with nonmagnetic WSSe or magnetic MnSSe Janus monolayers induces a layer-selective switch of the in-plane Rashba spin texture, resulting in opposite spin current directions in the top and bottom graphene layers. First-principles calculations reveal that both Janus monolayers decouple the two graphene layers while simultaneously inducing opposite signs of the proximity-induced Rashba spin-orbit coupling in each. Tight-binding modeling of the proximitized layers, combined with Rashba-Edelstein charge-to-spin conversion calculations, confirms that the spin current direction can be independently controlled by gating the top or bottom graphene layer. Bilayer graphene intercalated by Janus monolayers thus represents a promising platform for gate-tunable, layer-selective spintronic devices.
Comments9 pages, 5 figures
