Natalie E. Firsova, Sergey A. Ktitorov
The derived by us earlier electron scattering matrix for the short-range defects in monolayer graphene is applyed to description of the resistivity electron density dependence. It is argued that large charged defect density is unlikely in the suspended graphene and graphene lying above the trench.
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In the present study, the anisotropic resistivity of the monolayer graphene has been obtained in semiclassical regime beyond the Dirac point approximation. In particular, detailed investigations were made on the dependence of conductivity on the Fermi energy. At low energies, in the vicinity of the Dirac points, band energy of the monolayer graphene is isotropic at the Fermi level. Meanwhile, at the intermediate Fermi energies anisotropic effects such as trigonal warping is expected to be the origin of the anisotropic resistivity. However, besides the band anisotropy there also exists an other…
The effective electrical permittivity of a graphene monolayer is experimentally investigated in the 5-40 GHz range, which encompasses the microwave and the lower part of millimeterwave spectrum. The measurements were carried out using a coupled coplanar waveguide placed over a graphene monolayer flake, which is deposited on Si/SiO2. In contrast to some initial predictions, the effective permittivity of the graphene monolayer is slightly decreasing in the above-mentioned frequency range and has an average value of 3.3.
Exfoliated graphene monolayers are identified by optical inspection. In order to improve the monolayer detection, we investigate the angle dependence of the optical contrast of graphene on a 90nm SiO$_2$/Si substrate. We observe a significant enhancement of the visibility of graphene by changing the polarization and the angle of optical incidence. This method can be used to detect graphene on new substrate designs such as GaAs/AlAs based materials, which have a much cleaner surface.
Electron's tunneling through potential barrier in monolayer and bilayer graphene lattices is investigated by using full tight-binding model. Emphasis is placed on the resonance tunneling feature and inter-valley scattering probability. It is shown that normal incidence transmission probabilities for monolayer and bilayer graphene exhibit different properties. Our calculation indicates that valleytronics in graphene systems may be detected, generated and controlled by changing the structure parameters of the external electric potential.
The temperature ($\it T$) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates; HfO$_2$, SiO$_2$ and h-BN. The resistivity of graphene shows a linear $\it T$-dependence at low $\it T$ and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.
We have studied spin-depend electron tunnelling through the Rashba barrier in a monolayer graphene lattice. The transfer matrix method, have been employed to obtain the spin dependent transport properties of the chiral particles. It is shown that graphene sheets in presence of Rashba spin-orbit barrier will act as an electron spin- inverter.
This work investigates the electronic properties of the energy spectrum of a hybrid system composed of (i) a circular quantum dot of monolayer graphene surrounded by an infinite sheet of AA-stacked bilayer graphene and (ii) a circular quantum dot of AA-stacked graphene bilayer surrounded by infinite monolayer graphene. We establish analytical findings for the related energy levels and wave functions using the continuum model and the zigzag boundary conditions at the graphene monolayer-bilayer interface. We investigate the effects of perpendicular magnetic, dot radius, and electrical fields on …
The influence of high magnetic fields on coherent transport is investigated. A monolayer graphene quantum ring is fabricated and the Aharonov-Bohm effect is observed. For increased magnitude of the magnetic field higher harmonics appear. This phenomenon is attributed to an increase of the phase coherence length due to reduction of spin flip scattering.
Closed expressions for the Green functions of the stationary two-dimensional two-component Schrodinger equation for an electron moving in monolayer and bilayer graphene in the presence of a magnetic field are obtained in terms of the Whittaker functions.
We demonstrate strong anisotropic spin-orbit interaction (SOI) in graphene induced by monolayer WS$_2$. Direct comparison between graphene/monolayer WS$_2$ and graphene/bulk WS$_2$ system in magnetotransport measurements reveals that monolayer transition metal dichalcogenide (TMD) can induce much stronger SOI than bulk. Detailed theoretical analysis of the weak-antilocalization curves gives an estimated spin-orbit energy ($E_{\rm so}$) higher than 10 meV. The symmetry of the induced SOI is also discussed, and the dominant $z$ $\rightarrow$ $-z$ symmetric SOI can only explain the experimental r…
Here we report on a "new" type of ordering which allows to modify the electronic structure of a graphene monolayer (ML). We have intercalated small gold clusters between the top monolayer graphene and the buffer layer of epitaxial graphene. We show that these clusters perturb the quasiparticles on the ML graphene, and act as quantum dots creating a superlattice of resonators on the graphene ML, as revealed by a strong pattern of standing waves. A detailed analysis of the standing wave patterns using Fourier Transform Scanning Tunneling Spectroscopy strongly indicates that this phenomenon can a…
The electron transmission between monolayer and bilayer graphene is theoretically studied for zigzag and armchair boundaries within an effective-mass scheme. Due to the presence of an evanescent wave in the bilayer graphene, traveling modes are well connected to each other. The transmission through the boundary is strongly dependent on the incident angle and the dependence is opposite between the K and K' points, leading to valley polarization of transmitted wave.
We present an overview of the theoretical understanding of Hofstadter butterflies in monolayer and bilayer graphene. After a brief introduction on the past work in conventional semiconductor systems, we discuss the novel electronic properties of monolayer and bilayer graphene that helped to detect experimentally the fractal nature of the energy spectrum. We have discussed the theoretical background on the Moiré pattern in graphene. This pattern was crucial in determining the butterfly structure. We have also touched upon the role of electron-electron interaction in the butterfly pattern in gra…
We show that when bulk graphene breaks into n-type and p-type puddles, the in-plane resistivity becomes strongly field dependent in the presence of a perpendicular magnetic field, even if homoge- neous graphene has a field-independent resistivity. We calculate the longitudinal resistivity ρ_{xx} and Hall resistivity ρ_{xy} as a function of field for this system, using the effective-medium approximation. The conductivity tensors of the individual puddles are calculated using a Boltzmann approach suit- able for the band structure of graphene near the Dirac points. The resulting resistivity agree…
Electrons behave like a classical fluid with a momentum distribution function that varies slowly in space and time when the quantum mechanical carrier-carrier scattering dominates over all other scattering processes. Recent experiments in monolayer and bilayer graphene have reported signatures of such hydrodynamic electron behavior in ultra-clean devices. In this theoretical work, starting from a microscopic treatment of electron-electron, electron-phonon and electron-impurity interactions within the Random Phase Approximation, we demonstrate that monolayer and bilayer graphene both host two d…
Layer-selective chirality switch in bilayer graphene intercalated by Janus monolayers
研究了用Janus单层插入双层石墨烯，通过第一性原理计算等方法，发现能诱导面内Rashba自旋纹理层选择性开关，可独立控制自旋电流方向，为门可调、层选择性自旋电子器件提供了有前途的平台。
We investigate the stability of circular monolayer graphene subjected to a radial load using non-equilibrium molecular dynamics simulations. When monolayer graphene is radially stressed, after some small circular strain ($\sim 0.4%$) it buckles and bends into a new bowl like shape. Young's modulus is calculated from the linear relation between stress and strain before the buckling threshold, which is in agreement with experimental results. The prediction of elasticity theory for the buckling threshold of a radially stressed plate is presented and its results are compared to the one of our atom…
We present a theoretical study of magnetocapacitance in a graphene monolayer at finite temperature taking into account the effects of disorder. The density of states (DOS) and magnetocapacitance found for graphene are compared to those found in standard two dimensional electron gas (2DEG) systems. The magnetic oscillations in DOS and magnetocapacitance are found to be enhanced and much more robust with respect to temperature damping in monolayer graphene in comparison with a 2DEG. Furthermore, we find that there is a $π$ phase shift between magnetic oscillations in the two systems which can be…
We have investigated the transmission in monolayer graphene barrier at nonzero angle of incidence. Taking the influence of parallel wave vector into account, the transmission as the function of incidence energy has a gap due to the evanescent waves in two cases of Klein tunneling and classical motion. The modulation of the transmission gap by the incidence angle, the height, and width of potential barrier may lead to potential applications in graphene-based electronic devices.
We show that monolayer graphene intrinsically hosts higher-order topological corner states, in which electrons are localized topologically at atomic sizes. The emergence of the topological corner states in graphene is due to a nontrivial product of the Zak phases for two independent directions, which can be handily calculated graphically by using the bulk wavefunctions. We give an explicit expression that indicates the existence of topological corner states for various geometric edges and corner angles. We also demonstrate the nontrivial localization nature of the topological corner states in …
In this paper we investigate the electron-phonon contribution to the resistivity of suspended single layer graphene. In-plane as well as flexural phonons are addressed in different temperature regimes. We focus on the intrinsic electron-phonon coupling due to the interaction of electrons with elastic deformations in the graphene membrane. The competition between screened deformation potential vs fictitious gauge field coupling is discussed, together with the role of tension in the suspended flake. In the absence of tension, flexural phonons dominate the phonon contribution to the resistivity a…
The tight-binding model of electrons in graphene is reviewed. We derive low-energy Hamiltonians supporting massless Dirac-like chiral fermions and massive chiral fermions in monolayer and bilayer graphene, respectively, and we describe how their chirality is manifest in the sequencing of plateaus observed in the integer quantum Hall effect. The opening of a tuneable band gap in bilayer graphene in response to a transverse electric field is described, and we explain how Hartree theory may be used to develop a simple analytical model of screening.
We use the T-matrix approximation to analyze the effect of a localized impurity on the local density of states in mono- and bilayer graphene. For monolayer graphene the Friedel oscillations generated by intranodal scattering obey an inverse-square law, while the internodal ones obey an inverse law. In the Fourier transform this translates into a filled circle of high intensity in the center of the Brillouin zone, and empty circular contours around its corners. For bilayer graphene both types of oscillations obey an inverse law.
In this study, the Optical conductivity of substitutionary doped graphene is investigated in presence of the Rashba spin orbit coupling (RSOC). Calculations have been performed within the coherent potential approximation (CPA) beyond the Dirac cone approximation. Results of the current study demonstrate that the optical conductivity is increased by increasing the RSOC strength. Meanwhile it was observed that the anisotropy of the band energy results in a considerable anisotropic optical conductivity (AOC) in monolayer graphene. The sign and magnitude of this anisotropic conductivity was shown …
The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these newly-developed devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to ind…
Results of a study on the electrochemical properties of exfoliated single and multilayer graphene flakes are presented. Graphene flakes were deposited on silicon/silicon oxide wafers to enable fast and accurate characterization by optical microscopy and Raman spectroscopy. Conductive silver paint and silver wires were used to fabricate contacts; epoxy resin was employed as masking coating in order to expose a stable, well defined area of graphene. Both multilayer and monolayer graphene microelectrodes showed quasi-reversible behavior during voltammetric measurements in potassium ferricyanide. …
We examine a graphene quantum dot formed by combining an electric and a uniform magnetic field. The electric field creates a smooth quantum well potential while the magnetic field induces an exponential tail to the dot states. The states peak in the well and the electrostatic barrier region as a result of the Klein tunneling effect. Coupling between dot states which peak in different regions can be achieved with the electric and magnetic fields. The tunability of this dot with moderate external fields could be used for designing quantum devices in monolayer graphene.
We discuss the difficulties to discover Kondo effect in the resistivity of graphene. Similarly to the Kondo effect, electron-electron interaction effects and weak localization appear as logarithmic corrections to the resistance. In order to disentangle these contributions, a refined analysis of the magnetoconductance and the magnetoresistance is introduced. We present numerical simulations which display the discrimination of both effects. Further, we present experimental data of magnetotransport. When magnetic molecules are added to graphene, a logarithmic correction to the conductance occurs,…
In this work, we present numerical results for the second and third order conductivities of the plain graphene and gapped graphene monolayers associated with the second and third harmonic generation, the optical rectification and the optical Kerr effect. The frequencies considered here range from the microwave to the ultraviolet portion of the spectrum, the latter end of which had not yet been studied. These calculations are performed in the velocity gauge and directly address the components of the conductivity tensor. In the velocity gauge, the radiation field is represented by a power series…
We applied the Floquet scattering-matrix formalism to studying the electronic transport properties in a mesoscopic Dirac system. Using the method, we investigate theoretically quantum pumping driven by a series of time-periodic potentials in graphene monolayer both in the adiabatic and non-adiabatic regimes. Our numerical results demonstrate that adding harmonic modulated potentials can break the time reversal symmetry when no voltage bias is applied to the graphene monolayer. Thus, when the system is pumped with proper dynamic parameters, these scatterers can produce a nonzero dc pumped curre…
Graphene is a gapless semiconductor in which conduction and valence band wavefunctions differ only in the phase difference between their projections onto the two sublattices of the material's two-dimensional honeycomb crystal structure. We explain why this circumstance creates openings for broken symmetry states, including antiferromagnetic states in monolayer and bilayer graphene and exciton condensates in double-layer graphene, that are momentum space analogs of the real-space order common in systems with strong local interactions. We discuss some similarities among, and some differences bet…
Cyclotron resonance in graphene is studied with focus on many-body corrections to the resonance energies, which evade Kohn's theorem. The genuine many-body corrections turn out to derive from vacuum polarization, specific to graphene, which diverges at short wavelengths. Special emphasis is placed on the need for renormalization, which allows one to determine many-body corrections uniquely from one resonance to another. For bilayer graphene, in particular, both intralayer and interlayer coupling strengths undergo infinite renormalization; as a result, the renormalized velocity and interlayer c…
We directly measure the electronic structure of twisted graphene/MoS2 van der Waals heterostructures, in which both graphene and MoS2 are monolayers. We use cathode lens microscopy and microprobe angle-resolved photoemission spectroscopy measurements to image the surface, determine twist angle, and map the electronic structure of these artificial heterostructures. For monolayer graphene on monolayer MoS2, the resulting band structure reveals the absence of hybridization between the graphene and MoS2 electronic states. Further, the graphene-derived electronic structure in the heterostructures r…
We study the growth and microscopic structure of large-area graphene monolayers, grown on copper single crystals by chemical vapor deposition (CVD) in ultra-high vacuum (UHV). Using atomic-resolution scanning tunneling microscopy (STM), we find that graphene grows primarily in registry with the underlying copper lattice for both Cu(111) and Cu(100). The graphene has a hexagonal superstructure on Cu(111) with a significant electronic component, whereas it has a linear superstructure on Cu(100). The film quality is limited by grain boundaries, and the best growth is obtained on the Cu(111) surfa…
We show that Friedel oscillations (FO) in grapehene are strongly affected by the chirality of electrons in this material. In particular, the FO of the charge density around an impurity show a faster, $1/r^3$, decay than in conventional 2D electron systems and do not contribute to a linear temperature-dependent correction to the resistivity. In contrast, the FO of the exchange field which surrounds atomically sharp defects breaking the hexagonal symmetry of the honeycomb lattice lead to a negative linear T dependence of the resistivity.
Bound and resonance electronic states in impure graphene are studied. Short-range perturbations for defects and impurities of the types "local chemical potential" and "local gap" are taken into account. Zero gap and non-zero gap kinds of graphene are considered. A qualitative analysis of the electronic spectrum general features and numeric calculations are presented. A dependence of the resonance widths on the gap value, angular momentum values and the perturbation amplitudes is investigated.
We study a gapped graphene monolayer in a combination of uniform magnetic field and strain-induced uniform pseudomagnetic field. The presence of two fields completely removes the valley degeneracy. The resulting density of states shows a complicated behaviour that can be tuned by adjusting the strength of the fields. We analyze how these features can be observed in the sublattice, valley and full density of states. The analytical expression for the valley DOS is derived.
This paper demonstrates the high-quality tunnel barrier characteristics and layer number controlled tunnel resistance of a transition metal dichalcogenide (TMD) measuring just a few monolayers in thickness. Investigation of vertical transport in WS2 and MoS2 TMDs in graphene/TMD/metal heterostructures revealed that WS2 exhibits tunnel barrier characteristics when its thickness is between 2 to 5 monolayers, whereas MoS2 experiences a transition from tunneling to thermionic emission transport with increasing thickness within the same range. Tunnel resistance in a graphene/WS2/metal heterostructu…
We theoretically investigate the ultrafast terahertz(THz) properties of monolayer graphene. The analytical formulations of the photon carrier, electric polarization and optical current are obtained by solving the Bloch-equations in present of the ultrafast THz Gaussian pulse. Graphene shows a large nonlinear and ultrafast optical response at THz frequencies due to the gapless and relativistic Dirac particles with nearly linear energy dispersion. It is found that the photon carrier density, electric polarization and optical current density increase with increasing the frequency of the THz pulse…
We report semiconducting behavior of monolayer graphene enabled through plasma activation of substrate surfaces. The graphene devices are fabricated by mechanical exfoliation onto pre-processed SiO2/Si substrates. Contrary to pristine graphene, these graphene samples exhibit a transport gap as well as nonlinear transfer characteristics, a large on/off ratio of 600 at cryogenic temperatures, and an insulating-like temperature dependence. Raman spectroscopic characterization shows evidence of sp3 hybridization of C atoms in the samples of graphene on activated SiO2/Si substrates. We analyze the …
We demonstrate the interaction between surface acoustic waves and Dirac electrons in monolayer graphene at low temperatures and high magnetic fields. A metallic interdigitated transducer launches surface waves that propagate through a conventional piezoelectric GaAs substrate and couple to large-scale monolayer CVD graphene films resting on its surface. Based on the induced acousto-electric current, we characterize the frequency domains of the transducer from its first to the third harmonic. We find an oscillatory attenuation of the SAW velocity depending on the conductivity of the graphene la…
We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely aligning the crystallographic orientation of the graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Under such conditions, negative differential conductance (NDC) can be achieved. Application of in-plane magnetic field leads to electrons acquiring additional momentum during the tunneling process, whic…
We study Coulomb drag in a system consisting of a carbon nanotube (CNT) and monolayer graphene. Within the Fermi liquid theory we calculate the drag resistivity and find that the dimensional mismatch of the system components leads to a dependence of the drag rate on the carrier density, temperature, and spacing, which is substantially different from what is known for graphene double layers. Due to the competing effects of forward and backward scattering, we identify new features of the drag dependence on the electron density, which allows us to control their relative contribution to the drag r…
In this paper, we analytically investigate the electronic structure of Bernal stacking (AB stacking) graphene evolving from monolayer (a zero-gap semiconductor with a linear Dirac-like spectrum around the Fermi energy) to multi-layer (semi-metal bulk graphite). We firstly derive a real space analytical expression for the free Green's function (propagator) of multi-layer graphene based on the effective-mass approximation. The simulation results exhibit highly spatial anisotropy with three-fold rotational symmetry. By combining with the STM measurement of d2I/dV2 (the second derivative of curren…
Electronic structure of graphene monolayer-bilayer junction in a magnetic field is studied within an effective-mass approximation. The energy spectrum is characterized by interface Landau levels, i.e., the locally flat bands appearing near the boundary region, resulting in a series of characteristic peaks in the local density of states. Their energies are independent of boundary types such as zigzag or armchair. In the atomic scale, the local density of states shows a Kekulé pattern due to the valley mixing in the armchair boundary, while does not in the zigzag boundary.
The complex nature of filling factor $ν$=0 of monolayer graphene is studied in magnetotransport experiments. As function of perpendicular magnetic field a metal-insulator transition is observed, which is attributed to disorder-induced Landau level broadening in the canted antiferromagnetic phase. In the metallic regime a separation of the zeroth Landau level appears and signs of the quantum spin Hall effect are seen near $ν$=0. In addition to local transport, nonlocal transport experiments show results being consistent with helical edge transport.
Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene FETs in the bias region of negative output differential resistance. We show that, compared to the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5--3 and the need for a careful circuit stabilization.
We demonstrate electrical spin injection from a ferromagnet to a bilayer graphene (BLG) through a monolayer (ML) of single-crystal hexagonal boron nitride (h-BN). A Ni81Fe19/ML h-BN/BLG/h-BN structure is fabricated using a micromechanical cleavage and dry transfer technique. The transport properties across the ML h-BN layer exhibit tunnel barrier characteristics. Spin injection into BLG has been detected through non local magnetoresistance measurements.
The enormous stiffness and low density of graphene make it an ideal material for nanoelectromechanical (NEMS) applications. We demonstrate fabrication and electrical readout of monolayer graphene resonators, and test their response to changes in mass and temperature. The devices show resonances in the MHz range. The strong dependence of the resonant frequency on applied gate voltage can be fit to a membrane model, which yields the mass density and built-in strain. Upon removal and addition of mass, we observe changes in both the density and the strain, indicating that adsorbates impart tension…
The influence of electron-electron scattering on the distribution function and transport characteristics of intrinsic monolayer graphene is investigated via an ensemble Monte Carlo simulation. Due to the linear dispersion relation in the vicinity of the Dirac points, it is found that pair-wise collisions in graphene do not conserve the ensemble average velocity in contrast to conventional semiconductors with parabolic energy bands. Numerical results indicate that electron-electron scattering can lead to a decrease in the low field mobility by more than 80% for moderate electron densities. At h…
Using the continuum model, we investigate theoretically contribution of the low-energy electronic excitations to the Raman spectrum of superconducting monolayer graphene. We consider superconducting phases characterised by an isotropic order parameter in a single valley and find a Raman peak at a shift set by the size of the superconducting gap. The height of this peak is proportional to the square root of the gap and the third power of the Fermi level, and we estimate its quantum efficiency as $I\sim10^{-14}$.
We consider the nonlinear terahertz response of n-doped monolayer graphene at room temperature using a microscopic theory of carrier dynamics. Our tight-binding model treats the carrier-field interaction in the length gauge, includes phonon as well as short-range neutral-impurity scattering, and fully accounts for the intrinsic nonlinear response of graphene near the Dirac point. Treating each interaction microscopically allows us to separate contributions from current clipping, phonon creation, and elastic impurity scattering. Although neutral impurity scattering and phonon scattering are bot…
Folded single layer graphene forms a system of two decoupled monolayers being only a few Angstroms apart. Using magnetotransport measurements we investigate the electronic properties of the two layers conducting in parallel. We show a method to obtain the mobilities for the individual layers despite them being jointly contacted. The mobilities in the upper layer are significantly larger than in the bottom one indicating weaker substrate influence. This is confirmed by larger transport and quantum scattering times in the top layer. Analyzing the temperature dependence of the Shubnikov-de Haas o…
We theoretically calculate the impurity-scattering induced resistivity of twisted bilayer graphene at low twist angles where the graphene Fermi velocity is strongly suppressed. We consider, as a function of carrier density, twist angle, and temperature, both long-ranged Coulomb scattering and short-ranged defect scattering within a Boltzmann theory relaxation time approach. For experimentally relevant disorder, impurity scattering contributes a resistivity comparable to (much larger than) the phonon scattering contribution at high (low) temperatures. Decreasing twist angle leads to larger resi…
Theoretical investigation of thermodynamic properties of electrically modulated monolayer graphene in the presence of a perpendicular magnetic field B is presented.This work is aimed at determining the modulation induced effects on the thermodynamic properties of electrically modulated graphene.The results obtained are compared with those of the conventional 2DEG. The one-dimensional periodic potential due to electric modulation lifts the degeneracy of the Landau Levels and converts them into bands whose width oscillates as a function of B. We find Weiss type oscillations for small values of B…
We present magnetotransport measurements at classical magnetic fields for three graphene monolayers with various levels of disorder. A square root magnetoresistance (SRMR) behavior is observed in one sample which has the characteristic sub-linear conductivity signaling on the presence of short-range disorder in this sample. No square root MR was observed in other samples where short-range scattering is inessential as it is evident from the gate voltage dependences of their conductivities. Comparing our experimental data for the sample with theoretical calculations we found a good qualitative a…
We report studies of cyclotron resonance in monolayer graphene. Cyclotron resonance is detected using the photoconductive response of the sample for several different Landau level occupancies. The experiments measure an electron velocity at the K- (Dirac) point of $c_{K}^{*}$ = 1.093 x 10$^{6}$ ms$^{-1}$ and in addition detect a significant asymmetry between the electron and hole bands, leading to a difference in the electron and hole velocities of 5% by energies of 125 meV away from the Dirac point.
We report a proof-of-concept study of extraordinary magnetoresistance (EMR) in devices of monolayer graphene encapsulated in hexagonal boron nitride, having metallic edge contacts and a central metal shunt. Extremely large EMR values, $MR=(R(B) - R_0) / R_0\sim 10^5$, are achieved in part because $R_0$ approaches or crosses zero as a function of the gate voltage, exceeding that achieved in high mobility bulk semiconductor devices. We highlight the sensitivity, $dR/dB$, which in two-terminal measurements is the highest yet reported for EMR devices, and in particular exceeds prior results in gra…
On the basis of tight-binding lattice model, the edge states of monolayer and bilayer graphene nanoribbons (GNRs) with different edge terminations are studied. The effects of edge-hopping modulation, spin-orbital coupling (SOC), and bias voltage on bilayer GNRs are discussed. We observe the following: (i) Some new extra edge states can be created by edge-hopping modulation for monolayer GNRs. (ii) Intralayer Rashba SOC plays a role in depressing the band energy gap $E_g$ opened by intrinsic SOC for both monolayer and bilayer GNRs. An almost linear dependent relation, i.e., $E_g\sim λ_R$, is fo…
A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a thermo-pressure cycle to allow short range impurities to be adsorbed directly on the ultra clean graphene surface. The adsorption process generated a strong temperature and electric field dependent behavior on the conductance of the graphene device. The conductance around the neutrality point is observed to be reduced from around $e^2/h$ at 30 K to $\sim0.01~…
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