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arXiv 0812.1073cond-mat.mes-hallcond-mat.mtrl-sci
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SiO2表面单层石墨烯的空间分辨光谱

Spatially resolved spectroscopy of monolayer graphene on SiO2

A. Deshpande, W. Bao, F. Miao, C. N. Lau, B. J. LeRoy

摘要:

我们对SiO $_2$上剥离的单层石墨烯进行了扫描隧道光谱测量,以探讨其电子和结构性质之间的相关性。局部态密度图的特征在于电子和空穴水坑,其产生的原因是从石墨烯和随机带电杂质中的固有波纹的长距离intravalley散射。在低能量下,我们观察到短距离谷间散射,我们归因于晶格缺陷。我们的研究结果表明,石墨烯的电子性质的影响,本征波纹,缺陷和底层的SiO $_2$衬底。

英文摘要:

We have carried out scanning tunneling spectroscopy measurements on exfoliated monolayer graphene on SiO$_2$ to probe the correlation between its electronic and structural properties. Maps of the local density of states are characterized by electron and hole puddles that arise due to long range intravalley scattering from intrinsic ripples in graphene and random charged impurities. At low energy, we observe short range intervalley scattering which we attribute to lattice defects. Our results demonstrate that the electronic properties of graphene are influenced by intrinsic ripples, defects and the underlying SiO$_2$ substrate.

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