Hole carrier doping has been tried to pseudo-low-dimensional material La2RuO5 by substituting La3+ with Cd2+. Single phased samples of La2-xCdxRuO5 with x up to 0.5 have been successfully obtained and also high pressure O2 annealing has been performed to the x=0.5 sample. Although the formal ionic state of Ru is expected to increase from 4+ (at x=0) to 4.5+ (at x=0.5), the magnetic and electrical properties show no significant changes in as-sintered samples. In contrast, high pressure O2 annealed x=0.5 samples show a little reduction of electrical resistivity and the decrease of thermoelectric power at 260 K. From these results, it can be speculated that the doped carriers are mostly compensated by oxygen deficiency in as-sintered samples.
We fabricate LaxSr2-x-yBayIrO4-delta thin films by pulsed laser deposition, in an effort to realize the effective carrier doping and metallization in the Sr2IrO4 system. We design ideal in-plane Ir-O-Ir frame structure by utilizing tensile substrate strain and Ba substitution, as well as control La doping and oxygen deficiency. This enables us to elucidate relation between the charge transport and the carrier density through systematic changes from original p-type spin-orbit Mott insulator to highly doped n-type metal.
The effect of electron doping on the magnetic properties of the Brownmillerite-type bilayered compounds has been investigated by neutron powder diffraction in La substituted Ca2.5-xLaxSr0.5GaMn2O8 compounds (x = 0.05 and 0.1), in comparison with the undoped compound (x = 0). In all compounds, a long-range three dimensional collinear antiferromagnetic (AFM) structure is found below the Néel temperature TN of respective compound, whereas, well above TN, three dimensional short-range magnetic ordering is observed. In the intermediate temperature range just above TN, a strong effect of electron do…
Effect of Ti doping on the electrical transport and magnetic properties of layered Na0.8Co1-xTixO2 compounds has been investigated. The lattice parameters a and c increase with x. A minor amount of Ti doping results in a metal-insulator transition at low temperatures. For samples with x > 0.03, the variable-range hopping process dominates the transport behavior above a certain temperature. The temperature dependence of magnetization of all the samples is found to obey the Curie-Weiss law. The mechanism of the doping effect is discussed.
Herbertsmithite and Zn-doped barlowite are two compounds for experimental realization of twodimensional gapped kagome spin liquid. Theoretically, it has been proposed that charge doping a quantum spin liquid gives rise to exotic metallic states, such as high-temperature superconductivity. However, one recent experiment about herbertsmithite with successful Li-doping shows surprisingly the insulating state even under the heavy doped scenario, which can hardly be explained by many-body physics. Using first-principles calculation, we performed a comprehensive study about the Li intercalated dopin…
Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit cell at each GdTiO3/SrTiO3 interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO3 are independent of layer thicknesses and growth sequences, indicating that the mobile carriers are in a high concentration, two-dimensional electron gas bound to the interface. These carrier densities closely meet the electrostati…
The carrier type and density in Bi2Se3 single crystals are systematically tuned by introducing a calcium (Ca) dopant. A carrier density of ~1x1017 cm-3 which corresponds to ~25 meV in the Fermi energy is obtained in both n- and p-type materials. Electrical transport properties show that the insulating behavior is achieved in low carrier density crystals. In addition, both the band gap and reduced effective mass of carriers are determined.
Charge transport properties of thin films of sol--gel processed undoped and Al-doped zinc oxide nanoparticles with variable doping level between 0.8 at% and 10 at% were investigated. The X-ray diffraction studies revealed a decrease of the average crystallite sizes in highly doped samples. We provide estimates of the conductivity and the resulting charge carrier densities with respect to the doping level. The increase of charge carrier density due to extrinsic doping were compared to the accumulation of charge carriers in field effect transistor structures. This allowed to assess the scatterin…
We present the effects of lead doping on the thermoelectric properties of Tellurium Telluride, prepared by solid state reactions in an evacuated sealed silica tubes. Structurally, all these compounds were found to be phase pure as confirmed by the x-rays and energy dispersive spectroscopy analysis. The Seebeck co-efficient S was measured for all these compounds which show that S increases with increasing temperature from 295 to 550 K. The Seebeck coefficient is positive for the whole temperature range, showing p-type semiconductor characteristics. Complex behavior of Seebeck coefficient for le…
Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were sporadically recorded in different materials without noting the mechanism: electron doping was observed to cause a portion of the lowest unoccupied band to merge into the valance band, leading to a decrease in conductivity. This behavior we dub as 'anti-doping' was seen in rare-earth nickel oxides SmNiO3, cobalt oxides SrCoO2.5, Li-ion battery materials and e…
The transition metal dichalcogenide (TMD) $1T$-TaS$_{2}$ exhibits a rich set of charge density wave (CDW) orders. Recent investigations suggested that using light or electric field can manipulate the commensurate (C) CDW ground state. Such manipulations are considered to be determined by the charge carrier doping. Here we simulate by first-principles calculations the carrier doping effect on CCDW in $1T$-TaS$_{2}$. We investigate the charge doping effects on the electronic structures and phonon instabilities of $1T$ structure and analyze the doping induced energy and distortion ratio variation…
The Haldane spin-chain compound, Tb2BaNiO5, with two antiferromagnetic transitions, one at T1=63K, and the other at T2=25K, has been recently shown by us to be an exotic multiferroic below T2. Here, we report the results of our investigations of Sr doping at the Ba site by magnetization, heat-capacity, magnetoelectric (MDE), and pyrocurrent measurements. An intriguing finding, which we stress, is that the ferroelectricity is lost even for a doping level of 10 atomic percent, though magnetic ordering prevails. The doped specimens however retain significant magnetodielectric behaviour, but with …
Undesired unintentional doping and doping limits in semiconductors are typically caused by compensating defects with low formation energies. Since the formation energy of a charged defect depends linearly on the Fermi level, doping limits can be especially pronounced in wide bandgap semiconductors where the Fermi level can vary substantially. Introduction of non-equilibrium carrier concentrations during growth or processing alters the chemical potentials of band carriers and thus provides the possibility of modifying populations of charged defects in ways impossible at thermal equilibrium. Her…
The control of spin without magnetic field is one of challenges in developing spintronic devices. In an attempt to solve this problem, we proposed a novel hypothetic LaMn0.5Zn0.5AsO alloy from two experimentally synthesized rare earth element transition metal arsenide oxides, i.e. LaMnAsO and LaZnAsO. On the basis of the first-principles calculations with strong-correlated correction, we found that the LaMn0.5Zn0.5AsO alloy is an antiferromagnetic semiconductor at ground state, while bipolar magnetic semiconductor at ferromagnetic state. Both electron and hole doping in the LaMn0.5Zn0.5AsO all…
High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a "generalized" Cu doping by using randomly distributed Cu atoms along the channel and (ii) a "localized" Cu doping by adapting an ultrathin Cu layer at the metal-semiconductor interface. Compared to the pristine WS2 FETs, both the generalized Cu …
Dye doping is a promising way to increase the spectral purity of polymer light-emitting diodes (LEDs). Here we analyze the frequency and field dependence of the complex admittance of Al-Ba-PPV-PEDOT-ITO LEDs with and without dye. We compare the charge carrier mobilities of pristine and dye-doped double-carrier and hole-only (Au replacing Al-Ba) devices. Dye doping is shown to significantly influence the electron mobilities while the hole mobilities are left unchanged and thereby changing the carrier balance in a double carrier device towards that of a hole only device. The minimum in the LED c…
We show that doped cubic iron pyrite, which is a diamagnetic semiconductor, becomes ferromagnetic when $p$-type doped. We furthermore find that this material can exhibit high spin polarization both for tunneling and transport devices. These results are based on first principles electronic structure and transport calculations. This illustrates the use of $p$-type doping without magnetic impurities as a strategy for obtaining ferromagnetic semiconducting behavior, with implications for spintronic applications that require both magnetic ordering and good mobility. This is a combination that has b…
Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta$_{2}$O$_{5}$ hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO$_{3}$, which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to $\sim10^{13}$cm$^{-2}$ carriers, while the field-effect mobi…
We applied the generalized Bloch theorem to verify the ground state (most stable state) in monolayer metal diiodides 1T-XI$_{2}$ (X: Fe, Co, and Ni), a family of metal dihalides, using the first-principles calculations. The ground state, which can be ferromagnetic, antiferromagnetic, or spiral state, was specified by a wavevector in the primitive unit cell. While the ground state of FeI$_{2}$ is ferromagnetic, the spiral state becomes the ground state for CoI$_{2}$ and NiI$_{2}$. Since the multiferroic behavior in the metal dihalide can be preserved by the spiral structure, we believe that CoI…
We investigated the role of oxygen vacancy in n-type interface of LaAlO3 (LAO) overlayer on SrTiO3 (STO) (001) by carrying out density-functional-theory calculations. Comparing the total energies of the configurations with one vacancy in varying locations we found that oxygen vacancies favor to appear first in LAO surface. These oxygen vacancies in the surface generate a two-dimensional distribution of carriers at the interface, resulting in band bending at the interface in STO side. Dependent on the concentration of oxygen vacancies in LAO surface, the induced carrier charge at the interface …
We report the electronic properties of single crystals of candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in proximity of the Dirac point. Electric…
We investigated the influence of oxygen on the performance of P3HT:PCBM (poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester) solar cells by current--voltage, thermally stimulated current (TSC) and charge extraction by linearly increasing voltage (CELIV) measurement techniques. The exposure to oxygen leads to an enhanced charge carrier concentration and a decreased charge carrier mobility. Further, an enhanced formation of deeper traps was observed, although the overall density of traps was found to be unaffected upon oxygen exposure. With the aid of macroscopic simulations, base…
The mixed-valent multiferroic compound CaMn7O12 is studied for its magnetic and electric properties. The compound undergoes magnetic ordering below 90 K with a helimagnetic structure followed by a low temperature magnetic anomaly observed around 43 K. The present study shows that the magnetic anomaly at 43 K is associated with thermal hysteresis indicating first order nature of the transition. The compound also shows field-cooled magnetic memory and relaxation below 43 K, although no zero-field-cooled memory is present. Clear magnetic hysteresis loop is present in the magnetization versus fiel…
To obtain high-performance spintronic devices with high integration density, two-dimensional (2D) half-metallic materials are eagerly pursued all along. Here, we propose a stable 2D material with a honeycomb-kagome lattice, i.e., the Mg3C2 monolayer, based on first-principles calculations. This monolayer is an anti-ferromagnetic (AFM) semiconductor at its ground state. We further demonstrate that a transition from AFM semiconductor to ferromagnetic half-metal in this 2D material can be induced by carrier (electron or hole) doping. This magnetic transition can be understood by the Stoner criter…
The capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator is one of the key challenges of modern electronics. By employing angle resolved photoemission spectroscopy (ARPES) we find that a reversible metal to insulator transition and a fine tuning of the charge carriers from electrons to holes can be achieved in epitaxial bilayer and single layer graphene by molecular doping. The effects of electron screening and disorder are also discussed. These results demonstrate that epitaxial graphene is suitable for ele…
Motivated by a recent theoretical suggestion that doping electrons into various CaAl$_2$Si$_2$-type Zintl phase compounds may give rise to high thermoelectric performance, we explore the possibility of n-type (electron carrier) doping of CaZn$_2X_2$ ($X$ = As, P) using first principles calculation. We consider n-type doping of CaZn$_2X_2$ with the following two situations: interstitial-site doping of alkaline earth metals $AE$ (= Mg, Ca, Sr, Ba) and group 3 elements $G3$ (= Sc, Y, La), and $G3$ substitutional doping for the Ca site. The evaluation of the formation energy of these defects in va…
YBaCuFeO5 is one of the interesting multiferroic compounds, which exhibits magnetic ordering and dielectric anomaly above 200 K. Partial substitution of Fe with other magnetic and non-magnetic ion affects the magnetic and the structural properties of the system. We report detailed investigation of structural, magnetic and dielectric properties of YBaCuFe0.85M0.15O5 (M=Co, Ni and Ga). We observed that the partial replacement of Ni and Co in place of Fe, results in magnetic dilution and broadening of the magnetic transition and shifting towards lower temperature. The replacement of Fe with non-m…
From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to a higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.
Strontium titanate (SrTiO3) is widely used as a promising photocatalyst due to its unique band edge alignment with respect to the oxidation and reduction potential corresponding to oxygen evolution reaction (OER) and hydrogen evolution reaction (HER). However, further enhancement of the photocatalytic activity in this material could be envisaged through the effective control of oxygen vacancy states. This could substantially tune the photoexcited charge carrier trapping under the influence of elemental functionalization in SrTiO3, corresponding to the defect formation energy. The charge trappi…
Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band filling control of the Mott metal-insulator transition without introducing lattice distortions or disorder, as is the case for chemical doping. The approach is experimentally tested using ultrathin (2.5 nm) NdNiO3 films that are epitaxially grown on La-doped SrTiO3 films. We show that remote doping systematically changes the charge carrier density in the NdNiO3 film and causes a moderate shift in the metal-insulator tra…
Graphene is an excellent candidate for the next generation of electronic materials due to the strict two-dimensionality of its electronic structure as well as the extremely high carrier mobility. A prerequisite for the development of graphene based electronics is the reliable control of the type and density of the charge carriers by external (gate) and internal (doping) means. While gating has been successfully demonstrated for graphene flakes and epitaxial graphene on silicon carbide, the development of reliable chemical doping methods turns out to be a real challenge. In particular hole dopi…
We investigated the dependence of N$\acute{\textrm{e}}$el temperature as a critical temperature on the electric field and hole-electron doping in the antiferromagnetically ordered zigzag graphene nanoribbon. The temperature was calculated by averaging the magnon energy in the Brillouin zone within the mean-field approximation. We employed the generalized Bloch theorem instead of the supercell approach to reduce the computational cost significantly to obtain the magnon spectrum. We showed that the N$\acute{\textrm{e}}$el temperature reduces when increasing both the electric field and the hole-e…
The optical properties of graphene are strongly affected by electron-electron (e-e) and electron-hole (e-h) interactions. Here we tune these many-body interactions through varying the density of free charge carriers. Measurements from the infrared to the ultraviolet reveal significant changes in the optical conductivity of graphene for both electron and hole doping. The shift, broadening, and modification in shape of the saddle-point exciton resonance reflect strong screening of the many-body interactions by the carriers, as well as changes in quasi-particle lifetimes. Ab initio calculations b…
A modulation-doping approach to control the carrier density of the high-density electron gas at a prototype polar/non-polar oxide interface is presented. It is shown that the carrier density of the electron gas at a GdTiO3/SrTiO3 interface can be reduced by up to 20% from its maximum value (~ 3x10^14 cm^-2) by alloying the GdTiO3 layer with Sr. The Seebeck coefficient of the two-dimensional electron gas increases concurrently with the decrease in its carrier density. The experimental results provide insight into the origin of charge carriers at oxide interfaces exhibiting a polar discontinuity…
Structural, resistivity, thermoelectric power and magneto-transport properties of Cu doped Bi2Te3 topological insulators have been investigated. The occurrence of the tuning of charge carriers from n type to p type by Cu doping at Te sites of Bi2Te3 is observed both from Hall effect and thermoelectric power measurements. Carrier mobility decreases with the doping of Cu which provides evidence of the movement of Fermi level from bulk conduction band to the bulk valence band. Thermoelectric power also increaseswith doping of Cu.Moreover linear magnetoresistance (LMR) has been observed at high ma…
The control over material properties attainable through molecular doping is essential to many technological applications of organic semiconductors, such as OLED or thermoelectrics. These excitonic semiconductors typically reach the degenerate limit only at impurity concentrations of 5-10\%, a phenomenon that has been put in relation to the strong Coulomb binding between charge carriers and ionized dopants, and whose comprehension remained elusive so far. This study proposes a general mechanism for the release of carriers at finite doping in terms of collective screening phenomena. A multiscale…
We present a study of the electronic properties of Tl5Te3, BiTl9Te6 and SbTl9Te6 compounds by means of density functional theory based calculations. The optimized lattice constants of the compounds are in good agreement with the experimental data. The band gap of BiTl9Te6 and SbTl9Te6 compounds are found to be equal to 0.589 eV and 0.538 eV, respectively and are in agreement with the available experimental data. To compare the thermoelectric properties of the different compounds we calculate their thermopower using Mott's law and show, as expected experimentally, that the substituted telluride…
Superconducting transition temperature (Tc) reported in SnAs-based layered compound NaSn$_2$As$_2$ varies from 1.2 to 1.6 K, implying that its superconductivity is critically sensitive to non-stoichiometry. Here, we demonstrate that Na-doping on the Sn site (Na$_{1+x}$Sn$_{2-x}$As$_2$) is effective in enhancing superconductivity, leading to Tc = 2.1 K for x = 0.4. First-principles calculation indicates that such a doping, or Na$_{\rm Sn}$ antisite defects, is energetically favored over other cation vacancies. Our results pave the way for increasing Tc of layered tin pnictide superconductors.
Bottom-up production of semiconductor nanomaterials is often accompanied by inhomogeneity resulting in a spread in electronic properties which may be influenced by the nanoparticle geometry, crystal quality, stoichiometry or doping. Using photoluminescence spectroscopy of a population of more than 20,000 individual Zn-doped GaAs nanowires, we reveal inhomogeneity in, and correlation between doping and nanowire diameter by use of a Bayesian statistical approach. Recombination of hot-carriers is shown to be responsible for the photoluminescence lineshape; by exploiting lifetime variation across …
The doping of semiconductor materials is a fundamental part of modern technology, but the classical approaches have in many cases reached their limits both in regard to achievable charge carrier density, as well as mobility. Modulation doping, a mechanism that exploits the energy band alignment at an interface between two materials to induce free charge carriers in one of them, has been shown to circumvent the mobility restriction. Due to an alignment of doping limits by intrinsic defects, however, the carrier density limit cannot be lifted using this approach. Here we present a novel doping s…
Electrically tuning long-range magnetic orders has been realized in two-dimensional (2D) semiconductors via electrostatic doping. On the other hand, the observations are highly diverse: the transition can be realized by either electrons or holes or both depending on specific materials. Moreover, doped carriers seem to always favor the ferromagnetic (FM) ground state. The mechanism behind those diverse observations remains uncovered. Combining first-principles simulations, we analyze the spin superexchange paths of the correlated d/f orbitals around band edges and assign 2D magnetic semiconduct…
We describe a new regime for low-field magnetoresistance in organic semiconductors, in which the spin-relaxing effects of localized nuclear spins and electronic spins interfere. The regime is studied by the controlled addition of localized electronic spins to a material that exhibits substantial room-temperature magnetoresistance ($\sim 20$\%). Although initially the magnetoresistance is suppressed by the doping, at intermediate doping there is a regime where the magnetoresistance is insensitive to the doping level. For much greater doping concentrations the magnetoresistance is fully suppress…
All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modul…
We have investigated the transport and magnetic properties of group-IV ferromagnetic semiconductor Ge1-xFex films (x = 1.0 and 2.3 %) with and without boron doping grown by molecular beam epitaxy (MBE). In order to accurately measure the transport properties of 100-nm-thick Ge1-xFex films, (001)-oriented silicon-on-insulator (SOI) wafers with an ultra-thin Si body layer (~5 nm) were used as substrates. Owing to the low Fe content, the hole concentration and mobility in the Ge1-xFex films were exactly estimated by Hall measurements because the anomalous Hall effect in these films was found to b…
Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless characterization of doping with nanometer scale resolution. Here, we use low- and room-temperature cathodoluminescence (CL) measurements to analyze p-type and n-type GaAs thin films over a wide range of carrier densities ($2\times 10^{17}$ to $1\times 10^{19}$ cm$^{-3}$). The spectral shift and broadening of CL spectra induced by shallow dopant states and band filling are the signature doping. We fit the whole spectral lin…
We have performed a comparative study of the electronic properties of six different electron-doped metal phthalocyanine (MPc) compounds (ZnPc, CuPc, NiPc, CoPc, FePc, and MnPc), in which the electron density is controlled by means of potassium intercalation. In spite of the complexity of these systems, we find that the nature of the underlying molecular orbitals produce observable effects in the doping dependence of the electrical conductivity of the materials. For all the MPc's in which the added electrons are expected to occupy orbitals centered on the ligands (ZnPc, CuPc, and NiPc), the dop…
Doping inhomogeneities in solids are not uncommon, but their microscopic observation and understanding are limited due to the lack of bulk-sensitive experimental techniques with high-enough spatial and spectral resolution. Here, we demonstrate nanoscale imaging of both dopants and free charge carriers in La-doped BaSnO3 (BLSO) using high-resolution electron energy-loss spectroscopy (EELS). By analyzing both high- and low-energy excitations in EELS, we reveal chemical and electronic inhomogeneities within a single BLSO nanocrystal. The inhomogeneous doping leads to distinctive localized infrare…
The electronic and transport properties of CuInTe2 chalcopyrite are investigated using density functional calculations combined with Boltzmann theory. The band gap predicted from hybrid functional is 0.92 eV, which agrees well with experimental data and leads to relatively larger Seebeck coefficient compared with those of narrow-gap thermoelectric materials. By fine tuning the carrier concentration, the electrical conductivity and power factor of the system can be significantly optimized. Together with the inherent low thermal conductivity, the ZT values of CuInTe2 compound can be enhanced to …
We demonstrate the tunability of the photoluminescence (PL) properties of monolayer (1L)-MoS2 via chemical doping. The PL intensity of 1L-MoS2 was drastically enhanced by the adsorption of p-type dopants with high electron affinity, but reduced by the adsorption of n-type dopants. This PL modulation results from switching between exciton PL and trion PL depending on carrier density in 1L-MoS2. Achievement of the extraction and injection of carriers in 1L-MoS2 by this solution-based chemical doping method enables convenient control of optical and electrical properties of atomically thin MoS2.
Graphene has attracted great attentions since its first discovery in 2004. Various approaches have been proposed to control its physical and electronic properties. Here, we report that graphene based intercalation compounds is an efficient method to modify the electronic properties of few layer graphene (FLG). FeCl3 intercalated FLG were successfully prepared by two-zone vapor transport method. This is the first report on full intercalation for graphene samples. The features of the Raman G peak of such few-layer graphene intercalation compounds (FLGIC) are in good agreement with their full int…
In this work, we introduce models for deriving lower limits for the key parameters doping efficiency, charge carrier concentration, and charge carrier mobility from conductivity data of doped organic semiconductors. The models are applied to data of thin layers of Fullerene C60 n-doped by four different n-dopants. Combining these findings with thermoelectric Seebeck data, the energetic position of the transport level can be narrowed down and trends for the absolute values are derived.
Emergence of half-semiconductor behavior and tunable magnetism via carrier doping in Janus VXSe (X=Cl, Br, I) monolayers
Southwest University（西南大学）；Hanhong College, Southwest University（汉弘学院，西南大学）；AECC Hunan Aviation Powerplant Research Institute（中国航发湖南航空发动机研究所）；Chengdu University of Technology（成都理工大学）；Leshan Normal University（乐山师范学院）；Shanghai Jiao Tong University（上海交通大学）
Heusler alloys with Mn and Co have been found to exhibit interesting electronic and magnetic properties. Mn$_2$CoAl is well known SGS compound while Mn$_2$CoGa has weak half metallic character. By using plane wave pseudo-potential method, we studied the effect of Fe and Cr doping on half-metalicity and magnetism of these compounds. The doping destroys the SGS nature of Mn$_2$CoAl while the small-scale doping enhance the half-metallicity of Mn$_2$CoGa making it perfect half-metal. In case of Mn$_2$CoAl, the doping decrease the band gap while increase in band width is noticed for Mn$_2$CoGa. The…
Unintentional doping of the active layer is a source for lowered device performance in organic solar cells. The effect of doping is to induce a space-charge region within the active layer, generally resulting in increased recombination losses. In this work, the impact of a doping-induced space-charge region on the current-voltage characteristics of low-mobility solar cell devices has been clarified by means of analytical derivations and numerical device simulations. It is found that, in case of a doped active layer, the collection efficiency of photo-generated charge carriers is independent of…
We show that undoped silicon waveguides may suffer of up to 1.8 dB/cm free-carrier absorption caused by improper surface passivation. To verify the effects of free-carriers we apply a gate field to the waveguides. Smallest losses correspond to higher electrical sheet resistances and are generally obtained with non-zero gate fields. The presence of free carriers for zero gate field is attributed to surface transfer doping. These results open new perspectives for minimizing propagation losses in silicon waveguides and for obtaining low-loss and highly conductive silicon films without applying a …
Controlling doping is essential for a successful integration of semiconductor materials into device technologies. However, the assessment of doping levels and the distribution of charge carriers in carbon nanotubes or other nanoscale semiconductor materials is often either limited to a qualitative attribution of being 'high' or 'low' or it is entirely absent. Here, we describe efforts toward a quantitative characterization of doping in redox- or electrochemically doped semiconducting carbon nanotubes (s-SWNTs) using VIS-NIR absorption spectroscopy. We discuss how carrier densities up to about …
