用电场和载流子掺杂提高锯齿形石墨烯纳米颗粒中N $\acute{\textrm{e}}$ el温度的可能性
Impossibility of Increasing N$\acute{\textrm{e}}$el Temperature in Zigzag Graphene Nanoribbon by Electric Field and Carrier Doping
摘要：
我们研究了反铁磁有序锯齿形石墨烯纳米晶中N-$\acute{\textrm{e}}$电致发光温度作为临界温度对电场和空穴-电子掺杂的依赖关系。在平均场近似下，通过平均布里渊区中的磁振子能量来计算温度。我们采用广义布洛赫定理代替超原胞方法来获得磁振子谱，从而大大减少了计算量。我们发现，当增加电场和空穴-电子掺杂时，N $\acute{\textrm{e}}$的el温度降低，因此这些处理不会提高N $\acute{\textrm{e}}$ el温度。
英文摘要：
We investigated the dependence of N$\acute{\textrm{e}}$el temperature as a critical temperature on the electric field and hole-electron doping in the antiferromagnetically ordered zigzag graphene nanoribbon. The temperature was calculated by averaging the magnon energy in the Brillouin zone within the mean-field approximation. We employed the generalized Bloch theorem instead of the supercell approach to reduce the computational cost significantly to obtain the magnon spectrum. We showed that the N$\acute{\textrm{e}}$el temperature reduces when increasing both the electric field and the hole-electron doping, thus these treatments will never enhance the N$\acute{\textrm{e}}$el temperature.
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