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arXiv 1111.0534cond-mat.mtrl-sci
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掺杂对碲化铊热电性能影响的第一性原理计算

Effect of doping on the thermoelectric properties of thallium tellurides using first principles calculations

Philippe Jund, Xiaoma Tao, Romain Viennois, Jean-Claude Tédenac

摘要:

采用密度泛函理论计算方法研究了Tl_5Te_3、BiTl_9Te_6和SbTl_9Te_6化合物的电子性质.优化得到的化合物晶格常数与实验值符合较好。BiTl_9Te_6和SbTl_9Te_6化合物的禁带宽度分别为0.589 eV和0.538 eV,与已有的实验数据一致。为了比较不同化合物的热电性能,我们使用莫特定律计算它们的热电势,并显示,如实验所预期的那样,取代的碲化物具有比纯化合物好得多的热电性能。

英文摘要:

We present a study of the electronic properties of Tl5Te3, BiTl9Te6 and SbTl9Te6 compounds by means of density functional theory based calculations. The optimized lattice constants of the compounds are in good agreement with the experimental data. The band gap of BiTl9Te6 and SbTl9Te6 compounds are found to be equal to 0.589 eV and 0.538 eV, respectively and are in agreement with the available experimental data. To compare the thermoelectric properties of the different compounds we calculate their thermopower using Mott's law and show, as expected experimentally, that the substituted tellurides have much better thermoelectric properties compared to the pure compound.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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