arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2008.06188cond-mat.mtrl-sci
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节线半金属CaAgP中化学掺杂诱导的高迁移率载流子

High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP

Yoshihiko Okamoto, Kazushige Saigusa, Taichi Wada, Youichi Yamakawa, Ai Yamakage, Takao Sasagawa, Naoyuki Katayama, Hiroshi Takatsu, Hiroshi Kageyama, Koshi Takenaka

摘要:

我们报道了候选半金属半导体CaAgP单晶的电子性质。CaAgP的输运性质是在空穴掺杂的半导体框架内理解的。与此相反,Pd掺杂的CaAgP表现出急剧增加的磁阻在低磁场和一个强烈的电阻率在低温下可能由于弱的反局域化下降。霍尔电导数据表明,Pd掺杂的CaAgP不仅有由Pd掺杂诱导的空穴载流子,而且在狄拉克点附近有高迁移率的电子载流子。掺Pd的CaAgP的电阻率也表现出超导转变,起始温度为1.7- 1.8K。

英文摘要:

We report the electronic properties of single crystals of candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in proximity of the Dirac point. Electrical resistivity of Pd-doped CaAgP also showed a superconducting transition with onset temperature of 1.7-1.8 K.

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