Nodal line semimetals in two-dimensional (2-D) materials have attracted intense attention currently. From fundamental physics and spintronic applications points of view, high Curie temperature ferromagnetic (FM) ones with nodal lines robust against spin-orbit coupling (SOC) are significantly in desirable. Here, we propose that FM K2N monolayer is such Weyl nodal line semimetal. We show that K2N monolayer is dynamically stable, and has a FM ground magnetic state with the out-of-plane [001] magnetization. It shows two nodal lines in the low-energy band structures. Both nodal lines are robust against SOC, under the protection of mirror symmetry. We construct an effective Hamiltonian, which can well characterize the nodal lines in the system. Remarkably, the nodal line semimetal proposed here is distinct from the previously studied ones in that K2N monolayer is 2-D d0-type ferromagnet with the magnetism arising from the partially filled N-p orbitals, which can bring special advantages in spintronic applications. Besides, the Curie temperature in K2N monolayer is estimated to be 942K, being significantly higher than previous FM nodal lines materials. We also find that, specific tensile strains can transform the nodal line from type-I to a type-II one, making its nodal line characteristics even more interesting.
We demonstrate the manipulation of the Curie temperature of buried layers of the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the effect of annealing. Patterning the GaAs-capped ferromagnetic layers into nanowires exposes free surfaces at the sidewalls of the patterned (Ga,Mn)As layers and thus allows the removal of Mn interstitials using annealing. This leads to an enhanced Curie temperature and reduced resistivity compared to unpatterned samples. For a fixed annealing time, the enhancement of the Curie temperature is larger for narrower nanowires.
We have grown (InyGa1-y)1-xMnxAs ferromagnetic semiconductor layers with Mn composition x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-matched composition, i.e., y ~ 0.53, the Curie temperature increases linearly with the ferromagnetically effective Mn composition x_eff, following the empirical equation T_C=1300x_eff. We obtained Curie temperatures above 100 K when x is relatively high (x>0.1; x_eff>0.08) and the hole concentration is in the order of 10^19 cm^-3.
A two-dimensional scandium monochloride sheet was investigated by using density functional theory. It could be exfoliated from a known bulk material with a cleavage energy slightly lower than that of graphene. The sheet has a ferromagnetic ground state with a Curie temperature of 100 K. Moreover, the sheet becomes a half-metal under hole doping. The Curie temperature increases to 250 K with the doping amount of 0.4 per primitive cell, which is close to the ice point. The two-dimensional scandium monochloride sheet should be a good candidate for two-dimensional spintronics.
We determine from first-principles the Curie temperature Tc for bulk Co in the hcp, fcc, bcc, and tetragonalized bct phases, for FeCo alloys, and for bcc and bct Fe. For bcc-Co, Tc=1420 K is predicted. This would be the highest Curie temperature among the Co phases, suggesting that bcc-Co/MgO/bcc-Co tunnel junctions offer high magnetoresistance ratios even at room temperature. The Curie temperatures are calculated by mapping ab initio results to a Heisenberg model, which is solved by a Monte Carlo method.
We propose an explanation of the anomalous growth of plasticity in ferromagnets near the Curie point. We demonstrate that this effect is caused by spin-dependent detachment of dislocations from obstacles under an influence of the internal magnetic field. Magnetization fluctuations grow in the vicinity of the Curie point, yield an increase of the detachment probability and, hence, an increase of the plasticity. We apply this model for a description of the temperature behaviour of the critical stress in nickel and of the microhardness of gadolinium. An external magnetic field suppresses the magn…
Co$_2$FeSi crystallizes in the ordered L2$_1$ structure as proved by X-ray diffraction and Mößbauer spectroscopy. The magnetic moment of Co$_2$FeSi was measured to be about $6μ_B$ at 5K. Magnetic circular dichroism spectra excited by soft X-rays (XMCD) were taken to determine the element specific magnetic moments of Co and Fe. The Curie temperature was measured with different methods to be ($1100\pm20$)K. Co$_2$FeSi was found to be the Heusler compound as well as the half-metallic ferromagnet with the highest magnetic moment and Curie temperature.
We present a data set of calculated Curie temperatures for the main-phase compounds of rare-earth permanent magnets. We employ ab initio electronic structure calculations for the itinerant ferromagnetism and an effective spin model for the finite-temperature magnetism. Curie temperatures are derived on the basis of a classical Heisenberg model mapped via Liechtenstein's formula for atomic-pair-wise exchange couplings. Relative trends with respect to the species of rare-earth elements in calculated Curie temperatures for R2Fe14B are in agreement with experimental trends. Quantitative comparison…
The physical systems with ferromagnetism and "bad" metallicity hosting unusual transport properties are playgrounds of novel quantum phenomena. Recently EuTi$_{1-x}$Nb$_x$O$_3$ emerged as a ferromagnetic system where non-trivial temperature dependent transport properties are observed due to coexistence and competition of various magnetic and non-magnetic scattering processes. In the ferromagnetic state, the resistivity shows a $T^2$ temperature dependence possibly due to electron-magnon scattering and above the Curie temperature $T_c$, the dependence changes to $T^{3/2}$ behaviour indicating a…
Al1-xCrxN thin films with $0.02\le x \le 0.1$ were deposited by reactive co-sputtering onto c-plane (001) sapphire. Room-temperature ferromagnetism with a coercive field of 85 Oe was observed in samples with chromium contents as low as x = 0.027 (2.7%). With increasing Cr content the mean magnetic moment is strongly suppressed, with a maximum saturation moment of 0.62 and 0.71 $μ_B$ per Cr atom at 300 and 50 K respectively. We show that the Curie temperature of Al1-xCrxN for x = 0.027 is greater than 900 K.
Theoretical prediction of Curie temperature (TC) is of vital importance for designing the spintronic devices in two-dimensional (2D) ferromagnetic materials. Herein, based on the extensive investigation of Monte Carlo simulations, we summary and propose an improved method to estimate TC more precisely, which includes the different contributions of multiple near-neighbor interactions. Taking monolayer CrI3 as an example, the trends of TC with biaxial strain are investigated via Monte Carlo simulations, mean-field formulas and our method. Besides, our method is not only accurate and convenient t…
We present high-temperature ferromagnetism and large magnetic anisotropy in heavily Fe-doped n-type ferromagnetic semiconductor (In1-x,Fex)Sb (x = 20 - 35%) thin films grown by low-temperature molecular beam epitaxy. The (In1-x,Fex)Sb thin films with x = 20 - 35% maintain the zinc-blende crystal and band structure with single-phase ferromagnetism. The Curie temperature (TC) of (In1-x,Fex)Sb reaches 390 K at x = 35%, which is significantly higher than room temperature and the highest value so far reported in III-V based ferromagnetic semiconductors. Moreover, large coercive force (HC = 160 Oe) …
Layered van der Waals (vdW) crystals with intrinsic magnetic properties such as high Curie temperature (TC) and large perpendicular magnetic anisotropy (PMA) are key to the development and application of spintronic devices. The ferromagnetic vdW metal Fe3-xGeTe2 (FGT) has gained prominence recently due to its high TC (220 K) and strong PMA. Here, we introduce a new metallic vdW ferromagnets, Fe5-xGe2Te2 or FG2T, which was successfully synthesized and fully characterized. FG2T is a metal that orders ferromagnetically with a very sharp transition at 250 K (bulk and single crystal thin flakes) an…
Diluted magnetic semiconductors (DMSs) based on group-IV materials are desirable for spintronic devices compatible with current silicon technology. In this work, amorphous Mn-doped SiGe thin films were first fabricated on Ge substrates by radio frequency magnetron sputtering and then crystallized by rapid thermal annealing (RTA). After the RTA, the samples became ferromagnetic (FM) semiconductors, in which the Curie temperature increased with increasing Mn doping concentration and reached 280 K with 5% Mn concentration. The data suggest that the ferromagnetism came from the hole-mediated proce…
We provide experimental evidence that the upper limit of ~110 K commonly observed for the Curie temperature T_C of Ga(1-x)Mn(x)As is caused by the Fermi-level-induced hole saturation. Ion channeling, electrical and magnetization measurements on a series of Ga(1-x-y)Mn(x)Be(y)As layers show a dramatic increase of the concentration of Mn interstitials accompanied by a reduction of T_C with increasing Be concentration, while the free hole concentration remains relatively constant at ~5x10^20 cm^-3. These results indicate that the concentrations of free holes and ferromagnetically active Mn spins …
Identifying intrinsic low-dimensional ferromagnets with high transition temperature and electrically tunable magnetism is crucial for the development of miniaturized spintronics and magnetoelectrics. Recently long-range 2D ferromagnetism was observed in van der Waals crystals CrI$_3$ and Cr$_2$Ge$_2$Te$_6$, however their Curie temperature is significantly lowered when reducing down to monolayer/few layers. Herein, using renormalized spin-wave theory and first-principles electronic structure theory, we present a theoretical study of electrically tunable 2D ferromagnetism in van der Waals layere…
Thermal control of exchange coupling between two strongly ferromagnetic layers through a weakly ferromagnetic Ni-Cu spacer and the associated magnetoresistance is investigated. The spacer, having a Curie point slightly above room temperature, can be cycled between its paramagnetic and ferromagnetic states by varying the temperature externally or using joule heating. It is shown that the giant magnetoresistance vanishes due to a strong reduction of the mean free path in the spacer at above ~30 % Ni concentration -- before the onset of ferromagnetism. Finally, a device is proposed and demonstrat…
Magnetic materials have a plethora of applications ranging from informatics to energy harvesting and conversion. However, such functionalities are limited by the magnetic ordering temperature. In this work, we performed machine learning on the magnetic ground state and the Curie temperature (TC), using generic chemical and crystal structural descriptors. Based on a database of 2805 known intermetallic compounds, a random forest model is trained to classify ferromagnetic and antiferromagnetic compounds and to do regression on the TC for the ferromagnets. The resulting accuracy is about 86% for …
We have studied magnetic properties of heavily Mn-doped [(In0.44Ga0.56)0.79Mn0.21]As thin films grown by low-temperature molecular-beam epitaxy (LT-MBE) on InP substrates. The (InGaMn)As with high Mn content (21%) was obtained by decreasing the growth temperature to 190 degC. When the thickness of the [(In0.44Ga0.56)0.79Mn0.21]As layer is equal or thinner than 10 nm, the reflection high-energy electron diffraction (RHEED) pattern and transmission electron microscopy (TEM) show no MnAs clustering, indicating that a homogeneous single crystal with good quality was grown. In the magnetic circular…
Metallic Mn-based alloys with a nearest-neighbor Mn-Mn distance greater than 0.4 nm exhibit large, well-localized magnetic moments. Here we investigate the magnetism of tetragonal Au4Mn with a Curie temperature of 385 K, where manganese has a spin moment of 4.1 muB and its orbital moment is quenched. Since 80% of the atoms are gold, the spin orbit interaction is strong and Au4Mn exhibits uniaxial magnetocrystalline anisotropy with surface maze domains at room temperature. The magnetic hardness parameter of 1.0 is sufficient to maintain the magnetization along the c-axis for a sample of any sha…
Among the recently widely studied van der Waals layered magnets CrX3 (X=Cl, Br, I), CrCl3 monolayer (ML) is particularly puzzling as it is solely shown by experiments to have an in-plane magnetic easy axis and, furthermore, all of previous first-principles calculation results contradict this. Through systematical first-principles calculations,we unveil that its in-plane shape anisotropy that dominates over its weak perpendicular magnetocrystalline anisotropy is responsible for the in-plane magnetic easy axis of CrCl3 ML. To tune the in-plane ferromagnetism of CrCl3 ML into the desirable perpen…
Electronic structures, exchange interaction mechanism between magnetic ions and Curie temperature of Vanadium - doped Nitrides (AlN, GaN, and InN) are studied within KKR-LSDA-CPA. It is found that the ferromagnetic super-exchange interaction mechanism is dominant at low concentrations of Vanadium, but the anti-ferromagnetic super-exchange interaction appears and reduces the stabilization of ferromagnetism at sufficiently high concentrations (x > 0.10), especially for Vanadium-doped AlN and Vanadium- doped GaN. The estimation of the Curie temperature within the mean field approximation shows th…
We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our conclusions are based on simulations of electrostatics and ballistic quantum transport combined with a mean-field theory description of ferromagnetism in dilute magnetic semiconductors.
We investigate the magnetic and magneto-optic properties of epitaxial GaN:Gd layers as a function of the external magnetic field and temperature. An unprecedented magnetic moment is observed in this diluted magnetic semiconductor. The average value of the moment per Gd atom is found to be as high as 4000 \mub as compared to its atomic moment of 8 \mub. The long-range spin-polarization of the GaN matrix by Gd is also reflected in the circular polarization of magneto-photoluminescence measurements. Moreover, the materials system is found to be ferromagnetic above room temperature in the entire c…
The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase of the Curie temperature T_C of Ga(1-x)Mn(x)As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitatively consistent with a multi-band mean field theory simulation of carrier-mediated ferromagnetism. An important feature is that the increase of T_C occurs only in those structures where the modulation …
Ferromagnetic semiconductors (FMSs), which have the properties and functionalities of both semiconductors and ferromagnets, provide fascinating opportunities for basic research in condensed matter physics and device applications. Over the past two decades, however, intensive studies on various FMS materials, inspired by the influential mean-field Zener (MFZ) model have failed to realise reliable FMSs that have a high Curie temperature (Tc > 300 K), good compatibility with semiconductor electronics, and characteristics superior to those of their non-magnetic host semiconductors. Here, we demons…
Employing first-principles electronic structure calculations in conjunction with the frozen-magnon method we study the effective exchange interactions and spin waves in local moment ferromagnets. As prototypes we have chosen three L2$_1$-type full Heusler alloys Cu$_2$MnAl, Ni$_2$MnSn and Pd$_2$MnSn, and the L1$_2$-type XPt$_3$ compounds with X= V, Cr and Mn. We have also included CoPt$_3$ which is a usual ferromagnet. In all compounds due to the large spatial separation ($\sim 4$ Å) of the magnetic transition metal atoms, the 3\textit{d} states belonging to different atoms overlap weakly and …
The discovery of monolayer MA$_2$Z$_4$ (M = transition metals; A = IVA elements; Z = VA elements, Science 369, 2020, 670-674) family has led another advance for facilitating and harnessing magnetism in low-dimensional materials. However, only Cr and V based MA$_2$N$_4$ compounds exhibit intrinsic magnetism yet with unsatisfied magnetic ordering temperature. Herein, we identify a stable ferromagnetic number of this family, i.e., VGe$_2$Z$_4$ monolayer, by means of first-principles calculations. It is found that the magnetic configuration sustains under both compression and tensile uniaxial in-p…
We study the interatomic exchange interactions and Curie temperatures in half-metallic semi Heusler compounds NiCrZ (Z=P, Se, Te) and NiVAs. The study is performed within the framework of density functional theory. The calculation of exchange parameters is based on the frozen-magnon approach. It is shown that the exchange interactions in NiCrZ vary strongly depending on the Z constituent. The Curie temperature, Tc, is calculated within the mean field and random phase approximations. The difference between two estimations is related to the properties of the exchange interactions. The predicted …
We compare three first-principles methods of calculating the Curie temperature in two-dimensional (2D) ferromagnetic materials (FM), modeled using the Heisenberg model, and propose a simple formula for estimating the Curie temperature with high accuracy that works for all common 2D lattice types. First, we study the effect of exchange anisotropy on the Curie temperature calculated using the Monte-Carlo (MC), the Green's function method, and the renormalized spin-wave (RNSW). We find that the Green's function overestimates the Curie temperature in high-anisotropy regimes compared to MC, whereas…
Based on $ab$ $initio$ calculations and low-energy effective $k{\cdot}p$ model, we propose a type of Weyl nodal point-line fermion, composed of 0D Weyl points and 1D Weyl nodal line, in ferromagnetic material Eu$_5$Bi$_3$. In the absence of spin-orbital coupling (SOC), the spin-up bands host a pair of triply degenerate points together with a unique bird-cage like node structure. In the presence of SOC with (001) magnetization, each triplet point splits into a double Weyl point and a single Weyl point accompanied by two nodal rings, forming two sets of Weyl nodal point-line fermions near the Fe…
We report switching of magnetic anisotropy (MA) from in-plane to perpendicular with increasing the thickness d of a (001)-oriented ferromagnetic-semiconductor (FMS) (Ga0.7,Fe0.3)Sb layer with a high Curie temperature (Tc > 320 K), using ferromagnetic resonance at room temperature. We show that the total MA energy (E) along the [001] direction changes its sign from positive (in-plane) to negative (perpendicular) with increasing d above an effective critical value \mathrm{d}_\mathrm{C}^\mathrm{*}\ ~ 42 nm. We reveal that (Ga,Fe)Sb has two-fold symmetry in the film plane. Meanwhile, in the plane …
A concept is presented serving to guide in the search for new materials with high spin polarization. It is shown that the magnetic moment of half-metallic ferromagnets can be calculated from the generalized Slater-Pauling rule. Further, it was found empirically that the Curie temperature of Co$_2$ based Heusler compounds can be estimated from a seemingly linear dependence on the magnetic moment. As a successful application of these simple rules, it was found that Co$_2$FeSi is, actually, the half-metallic ferromagnet exhibiting the highest magnetic moment and the highest Curie temperature meas…
We complete our earlier (Phys. Rev. B, {\bf 66}, 134435 (2002)) study of the electronic structure, exchange interactions and Curie temperature in (GaMn)As and extend the study to two other diluted magnetic semiconductors (GaCr)As and (GaFe)As. Four concentrations of the 3d impurities are studied: 25%, 12.5%, 6.25%, 3.125%. (GaCr)As and (GaMn)As are found to possess a number of similar features. Both are semi-metallic and ferromagnetic, with similar properties of the interatomic exchange interactions and the same scale of the Curie temperature. In both systems the presence of the charge carrier…
We observe a singularity in the temperature derivative $dρ/dT$ of resistivity at the Curie point of high-quality (Ga,Mn)As ferromagnetic semiconductors with $T_c$'s ranging from approximately 80 to 185 K. The character of the anomaly is sharply distinct from the critical contribution to transport in conventional dense-moment magnetic semiconductors and is reminiscent of the $dρ/dT$ singularity in transition metal ferromagnets. Within the critical region accessible in our experiments, the temperature dependence on the ferromagnetic side can be explained by dominant scattering from uncorrelated …
We present a semi-analytic theory for the Curie temperature in diluted magnetic semi-conductors that treats disorder effects exactly in the effective Heisenberg Hamiltonian, and spin fluctuations within a local RPA. The exchange couplings are taken from concentration dependent {\it ab initio} estimates. The theory gives very good agreement with published data for well-annealed samples of Mn$_x$Ga$_{1-x}$As. We predict the critical temperatures for Mn$_x$Ga$_{1-x}$N lower than in doped GaAs, despite the stronger nearest-neighbour ferromagnetic coupling. We also predict the dependence on the hol…
For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity-band model) or in the valence band that is already merged with the Mn-derived impurity band (valence-band model). We investigate this question by carefully shifting the Fermi level by means of carrier compensation. We use helium-ion implantation, a standard industry technology, to precisely compensate the hole doping of GaAs-based diluted ferromag…
The effective exchange interactions of magnetic overlayers Fe/Cu(001) and Co/Cu(001) covered by a Cu-cap layer of varying thickness were calculated in real space from first principles. The effective two-dimensional Heisenberg Hamiltonian was constructed and used to estimate magnon dispersion laws, spin-wave stiffness constants, and overlayer Curie temperatures within the mean-field and random-phase approximations. Overlayer Curie temperature oscillates as a function of the cap-layer thickness in a qualitative agreement with a recent experiment.
Tuning topological and magnetic properties of materials by applying an electric field is widely used in spintronics. In this work, we find a topological phase transition from topologically trivial to nontrivial states at an external electric field of about 0.1 V/A in MnBi$_2$Te$_4$ monolayer that is a topologically trivial ferromagnetic semiconductor. It is shown that when electric field increases from 0 to 0.15 V/A, the magnetic anisotropy energy (MAE) increases from about 0.1 to 6.3 meV, and the Curie temperature Tc increases from 13 to about 61 K. The increased MAE mainly comes from the enh…
Two-dimensional (2D) ferromagnetic (FM) semiconductors with high Curie temperature have long been pursued for electronic and spintronic applications. Here we provide a general strategy to achieve robust FM state in bilayer CrI3 of the monoclinic stacking, which intrinsically has interlayer antiferromagnetic (AFM) order and weak in-plane FM coupling. We showed that the proximity effect from bulk semiconducting substrates induces electronic doping and significantly increases the FM nearest-neighbor exchange for bilayer CrI3, leading to the AFM-to-FM transition for the interlayer spin configurati…
We report the annealing-induced enhancement of ferromagnetism and nano-particle formation in group-IV-based ferromagnetic-semiconductor GeFe. We successfully increase the Curie temperature of the Ge0.895Fe0.105 film up to ~220 K while keeping a single ferromagnetic phase when the annealing temperature is lower than 500°C. In contrast, when annealed at 600°C, single-crystal GeFe nano-particles with stacking faults and twins, which have a high Curie temperature nearly up to room temperature, are formed in the film. Our results show that annealing is quite effective to improve the magnetic proper…
A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP or (Al,Ga)As which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable en…
(La1-xSrx)(Zn1-yMny)AsO is a two dimensional diluted ferromagnetic semiconductor that has the advantage of decoupled charge and spin doping. The substitution of Sr2+ for La3+ and Mn2+ for Zn2+ into the parent semiconductor LaZnAsO introduces hole carriers and spins, respectively. This advantage enables us to investigate the influence of carrier doping on the ferromagnetic ordered state through the control of Sr concentrations in (La1-xSrx)(Zn0.9Mn0.1)AsO. 10 % Sr doping results in a ferromagnetic ordering below TC ~ 30 K. Increasing Sr concentration up to 30 % heavily suppresses the Curie temp…
An effective scheme of isostructural alloying was applied to establish a Curie-temperature window in isostructural MnNiGe-CoNiGe system. With the simultaneous accomplishment of decreasing structural-transition temperature and converting antiferromagnetic martensite to ferromagnetic state, a 200 K Curie-temperature window was established between Curie temperatures of austenite and martensite phases. In the window, a first-order magnetostructural transition between paramagnetic austenite and ferromagnetic martensite occurs with a sharp jump in magnetization, showing a magnetic entropy change as …
We propose a ferromagnetic/ferroelectric hybrid double quantum well structure, and present an investigation of the Curie temperature (Tc) modulation in this quantum structure. The combined effects of applied electric fields and spontaneous electric polarization are considered for a system that consists of a Mn δ-doped well, a barrier, and a p-type ferroelectric well. We calculate the change in the envelope functions of carriers at the lowest energy sub-band, resulting from applied electric fields and switching the dipole polarization. By reversing the depolarizing field, we can achieve two dif…
We present the magnetotransport properties of very thin (5 to 15 nm) single (Ga,Mn)As layers grown by low temperature molecular beam epitaxy. A lower (Ga,Mn)As thickness limit of 5 nm for the ferromagnetic phase and the dependence of the Curie temperature on (Ga,Mn)As thickness are determined from electrical transport measurements. The Curie temperature is determined to be 97 K for the thinnest ferromagnetic sample and is found to decrease for increasing layer thickness. A carrier density of ~7.1$\times10^{20}$ cm$^{-3}$ for the 5 nm thick (Ga,Mn)As layer is determined from Hall measurements. …
Two-dimensional chromium oxide fluoride CrOF sheet was studied based on density functional theory. The investigation indicates that the CrOF sheet is an intrinsic ferromagnetic semiconductor. The calculated low cleavage energy implies that the ferromagnetic semiconductor can be exfoliated from its bulk form. The corresponding Curie temperature is 150 K. In particular, the Curie temperature increases up to 410 K under hole doping and the CrOF sheet becomes a half-metal. The versatile electronic and magnetic properties indicate that the two-dimensional CrOF sheet can be a promising candidate for…
Inspired by the successful synthesis of two-dimensional (2D) V-based Janus dichloride monolayers with intrinsic ferromagnetism and high Curie temperature (T$_{c}$), the electronic structure, spin-valley splitting and magnetic anisotropy of Janus 2H-VSeS monolayers are investigated in detailed using first-principles calculations. The results show that the Janus 2H-VSeS monolayer exhibits a large valley splitting of 105meV, high T$_{c}$ of 278K and good magnetocrystalline anisotropy (0.31meV) contributed by the in-plane d$_{x^{2}-y^{2}}$/d$_{xy}$ orbitals of V atoms. The biaxial strain ($-$8%<$\…
(Ga$_{1-x}$,Fe$_x$)Sb is one of the promising ferromagnetic semiconductors for spintronic device applications because its Curie temperature ($T_{\rm C}$) is above 300 K when the Fe concentration $x$ is equal to or higher than ~0.20. However, the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and first-principles calculations to investigate the $x$ dependence of the Fe 3$d$ states in (Ga$_{1-x}$,Fe$_x$)Sb ($x$ = 0.05, 0.15, and 0.25) thin films. The observed Fe 2$p$-3$d$ RPES spectra reveal that the …
The magnetic state of Nitrogen-doped MgO, with N substituting O at concentrations between 1% and the concentrated limit, is calculated with density-functional methods. The N atoms are found to be magnetic with a moment of 1 Bohr magneton per Nitrogen atom and to interact ferromagnetically via the double exchange mechanism. The long-range magnetic order is established above a finite concentration of about 1.5% when the percolation threshold is reached. The Curie temperature increases linearly with the concentration, and is found to be about 30 K for 10% concentration. Besides the substitution o…
Here, we study the magnetism of the distorted 1T-TcX2 (X=S,Se) based on first-principles calculation. The magnetism originates from the hole doping due to the density of states near the valence band edge having van Hove singularity feature. The calculated results show that the TcS2 monolayer can develop an interesting ferromagnetic (FM) half-metallic phase with tunable spin-polarization orientation. The FM half-metallicity and magnetic moments of the hole-doped TcS2 monolayer are primarily derived from the p orbital of S atoms, then, a FM ground phase with a high Curie temperature (Tc) (larger…
We theoretically investigate impurity correlation and magnetic clustering effects on the long-range ferromagnetic ordering in diluted magnetic semiconductors, such as $\textrm{Ga}_{1-x}\textrm{Mn}_{x}\textrm{As}$, using analytical arguments and direct Monte Carlo simulations. We obtain an analytic formula for the ferromagnetic transition temperature $T_{c}$ which becomes asymptotically exact in the strongly disordered, highly dilute (i.e. small $x$) regime. We establish that impurity correlations have only small effects on $T_{c}$ with the neutrally correlated random disorder producing the nom…
The field-driven reorientation transition of an anisotropic ferromagnetic monolayer is studied within the context of a finite-temperature Green's function theory. The equilibrium state and the field dependence of the magnon energy gap $E_0$ are calculated for static magnetic field $H$ applied in plane along an easy or a hard axis. In the latter case, the in-plane reorientation of the magnetization is shown to be continuous at T=0, in agreement with free spin wave theory, and discontinuous at finite temperature $T>0$, in contrast with the prediction of mean field theory. The discontinuity in th…
Ferrovalley materials with spontaneous valley polarization are crucial to valleytronic application. Based on first-principles calculations, we demonstrate that two-dimensional (2D) YX$_2$(X= I, Br,and Cl) in 2H structure constitute a series of promising ferrovalley semiconductors with large spontaneous valley polarization and high Curie temperature. Our calculations reveal that YX$_2$ are dynamically and thermally stable 2D ferromagnetic semiconductors with a Curie temperature above 200 K. Due to the natural noncentrosymmetric structure, intrinsic ferromagnetic order and strong spin orbital co…
Prediction of the Curie temperature is of significant importance for the design of ferromagnetic materials. Even though the Curie temperature has been estimated using the Heisenberg model, magnetic exchange coupling parameters widely used is thus far based on first-principles calculations at zero temperature. In the explicit consideration of temperature effects, it is important to minimise the total free energy, because the magnetic and phonon free energies correlate with each other. Here, we propose a first-principles thermodynamic approach to minimise the total free energy considering both t…
The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature TC. It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band. In this paper we combine results of channeling experiments, which measure the concentrations both of Mn ions and of holes relevant to the ferromagnetic order, with magnetization, transport, and magneto-o…
