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arXiv 2202.10604cond-mat.mtrl-sci
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I4/mcm-Si $_{48}$:一种理想的拓扑节线半金属

I4/mcm-Si$_{48}$: An Ideal Topological Nodal-Line Semimetal

Laiyuan Su, Shifang Li, Jin Li, Chaoyu He, Xu-Tao Zeng, Xian-Lei Sheng, Tao Ouyang, Chunxiao Zhang, Chao Tangand Jianxin Zhong

摘要:

拓扑半金属由于其奇异的物理性质和巨大的应用潜力而引起了人们的广泛关注。硅基TMS因其高丰度、无毒性以及与当前半导体工业的天然兼容性而尤为重要。利用可转移紧束缚和DFT HSE计算,从成千上万种硅同素异形体中筛选出一种理想的低能拓扑半金属(TNLSM)硅(I4/mcm-Si $_{48}$),它在费米能级处具有干净的带交叉.形成能、声子色散、从头算分子动力学和弹性常数的计算结果表明,I4/mcm-Si 48具有良好的稳定性,比几种合成的硅结构更稳定。通过对对称性的分析,发现I4/mcm-Si 48的拓扑谱线受到镜像对称性、反转、时间反演和SU(2)自旋旋转对称性的保护,并观察到近似平坦的鼓面状表面谱。此外,I4/mcm-Si 48还表现出奇异的光电性质,低能光子可以激发出具有高费米速度(3.4 $\sim$ 4.36 $\times$ 10 $^5$ m/s)的狄拉克费米子。我们的研究为基础研究和在高速光电器件中的潜在实际应用提供了一种很有前途的拓扑半导体线半金属。

英文摘要:

Topological semimetals (TSMs) have attracted numerous attention due to their exotic physical properties and great application potentials. Silicon-based TMSs are of particularly importance because of their high abundance, nontoxicity and natural compatibility with current semiconductor industry. In this work, an ideal low-energy topological nodal-line semimetal (TNLSM) silicon (I4/mcm-Si$_{48}$) with a clean band crossing at Fermi level is screened from thousands of silicon allotropes by the transferable tight-binding and DFT-HSE calculations. The results of formation energy, phonon dispersion, ab initio molecular dynamics and elastic constants show that I4/mcm-Si48 possesses good stability and is more stable than several synthetized silicon structures. By analyzing the symmetry, it reveals that the topological nodal-line of I4/mcm-Si48 is protected by mirror symmetry and inversion, time-reversal and SU(2) spin-rotation symmetries, and the nearly flat drumhead-like surface spectrum is observed. Furthermore, I4/mcm-Si48 exhibits exotic photoelectric properties and the Dirac fermions with high Fermi velocity (3.4$\sim$4.36$\times$10$^5$ m/s) can be excited by low energy photons. Our study provides a promising topological nodal-line semimetal for fundamental research and potential practical applications in semiconductor-compatible high-speed photoelectric devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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