We study the effect of band gap on the ground-state properties of Dirac electrons in a doped graphene within the random phase approximation at zero temperature. Band gap dependence of the exchange, correlation and ground-state energies and the compressibility are calculated. We additionally show that the conductance in the gapped graphene is smaller than gapless one. We also calculate the band gap dependence of charge compressibility and it decreases with increasing the band gap values.
We study the effect of uniaxial strain on the electronic band structure of gapped graphene. We consider two types of gapped graphene, one which breaks the symmetry between the two triangular sublattices (staggered model), and another which alternates the bonds on the honeycomb lattice (Kekulé model). In the staggered model, the effect of strains below a critical value is only a shift of the band gap location. In the Kekulé model, as strain is increased, band gap location is initially pinned to a corner of the Brillouin zone while its width diminishes, and after gap closure the location of the …
We study the problem of Coulomb field-induced charging of the ground state in a system of 2D massive Dirac particles (gapped graphene). As in its 3D QED counterpart, the critical Coulomb coupling is renormalized to higher values, compared to the massless case. We find that in gapped graphene a novel supercritical regime is possible, where the screening charge is comparable to the impurity charge, thus leading to suppression of the Coulomb field at nanometer scales. We corroborate this with numerical solution of the tight-binding problem in the honeycomb lattice.
Based on the tight-binding model calculations and photonic experimental visualization on graphene, we report the domain-wall-induced gapped topological kink states and topological corner states. In graphene, domain walls with gapless topological kink states could be induced either by sublattice symmetry breaking or by lattice deformation. We find that the coexistence of these two mechanisms will induce domain walls with gapped topological kink states. Significantly, the intersection of these two types of domain wall gives rise to topological corner state localized at the crossing point. Throug…
We calculate the nuclear spin-lattice relaxation time and the Knight shift for the case of gapped graphene systems. Our calculations consider both the massive and massless gap scenarios. Both the spin-lattice relaxation time and the Knight shift depend on temperature, chemical potential, and the value of the electronic energy gap. In particular, at the Dirac point, the electronic energy gap has stronger effects on the system nuclear magnetic resonance parameters in the case of the massless gap scenario. Differently, at large values of the chemical potential, both gap scenarios behave in a simi…
This is a theoretical study of electron transport in gated bilayer graphene - a novel semiconducting material with a tunable band gap. It is shown that the which-layer pseudospin coherence enhances the subgap conductivity and facilitates the thermally activated transport. The mechanism proposed can also lead to the non-monotonic conductivity vs. temperature dependence at a band gap size of the order of 10 meV. The effect can be observed in gapped bilayer graphene sandwiched in boron nitride where the electron-hole puddles and flexural phonons are strongly suppressed.
When a gap of tunable size opens at the conic band intersections of graphene, the Berry phase does not vanish abruptly, but progressively decreases as the gap increases. The phase depends on the reciprocal-space path radius, i.e., for a doped system, the Fermi wave vector. The phase and its observable consequences can thus be tuned continuously via gap opening --by a modulating potential induced by strain, epitaxy, or nanostructuration-- and doping adjustment.
Graphene, as an atomic-thick ultrasoft membrane, almost has no resistance against out-of-plane deformations and, therefore, it is always wrinkled to a certain degree. Recently, corrugated structures and their effects on the electronic properties of monolayer graphene have been studied extensively. However, similar experimental studies in bilayer graphene have yet to be reported. Here, we show that corrugations in bilayer graphene can generate incommensurate stacking solitons (domain walls) between commensurate Bernal-stacked domains. By using scanning tunneling microscopy, we microscopically s…
Numerically solving the semiconductor Bloch equations within a phenomenological relaxation time approximation, we extract both the linear and nonlinear optical conductivities of doped graphene and gapped graphene under excitation by a laser pulse. We discuss in detail the dependence of second harmonic generation, third harmonic generation, and the Kerr effects on the doping level, the gap, and the electric field amplitude. The numerical results for weak electric fields agree with those calculated from available analytic perturbation formulas. For strong electric fields when saturation effects …
We consider the anomalous thermoelectric transport in gapped single and bilayer graphene where the gap may be due to broken inversion symmetry. In the presence of the gap, non-trivial Berry phase effects can be shown to mediate a transverse thermoelectric voltage in response to an applied temperature gradient even in the absence of a perpendicular magnetic field. This spontaneous, anomalous Nernst effect is nonzero for non-uniform chemical potential in the two inequivalent valleys in the graphene band structure. Conversely, the Nernst response can be used to create a valley-index polarization …
We study edge-states in graphene systems where a bulk energy gap is opened by inversion symmetry breaking. We find that the edge-bands dispersion can be controlled by potentials applied on the boundary with unit cell length scale. Under certain boundary potentials, gapless edge-states with valley-dependent velocity are found, exactly analogous to the spin-dependent gapless chiral edge-states in quantum spin Hall systems. The connection of the edge-states to bulk topological properties is revealed.
The optical properties of dielectric plates coated with gapped graphene are investigated on the basis of first principles of quantum electrodynamics. The reflection coefficients and reflectivities of graphene-coated plates are expressed in terms of the polarization tensor of gapped graphene and the dielectric permittivity of plate material. Simple approximate expressions for the required combinations of components of the polarization tensor applicable in the wide frequency region, where the presence of a gap influences the optical properties, are found. Numerical computations of the reflectivi…
Bilayer graphene contains, compared to graphene monolayer, an additional graphene sheet and, therefore, extra degrees of freedom, making it a unique system for complex electronic states to emerge. Here, we show that there are two types of domain walls, i.e., coupling domain wall and potential domain wall, in gapped graphene bilayers, which make microscopic electronic properties of the bilayers varying spatially. The coupling domain wall separates two graphene bilayer regions with different interlayer coupling strengths and the potential domain wall is a boundary separating two adjacent regions…
We present numerical calculations of the impact of charge carriers-carriers interactions on the dynamical properties of quasiparticles such as renormalized velocity and quasiparticle inelastic scattering lifetime in a gapped graphene sheet. Our formalism is based on the many-body $G_0W$-approximation for the self-energy. We present results for the many-body renormalized velocity suppression and the renormalization constant over a broad range of energy gap values. We find that the renormalized velocity is almost independence of the carrier densities at large density regime. We also show that th…
We employ a dual-gated geometry to control the band gap Δin bilayer graphene and study the temperature dependence of the resistance at the charge neutrality point, RNP(T), from 220 to 1.5 K. Above 5 K, RNP(T) is dominated by two thermally activated processes in different temperature regimes and exhibits exp(T3/T)^{1/3} below 5 K. We develop a simple model to account for the experimental observations, which highlights the crucial role of localized states produced by potential fluctuations. The high temperature conduction is attributed to thermal activation to the mobility edge. The activation e…
We report our theoretical calculations on the temperature and energy dependent electrical conductivity of gapped graphene within the framework of Boltzmann transport formalism. Since screening effects have known to be of vital importance in explaining the conductivity of gapless graphene therefore we first worked out the behaviour of the temperature dependent polarization function for gapped graphene as a function of wave vector and band gap, respectively. Polarization of gapped graphene has been compared with that of gapless graphene, bilayer graphene and 2DEG to see the effects of gap. It is…
The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases, approaching the electron band structure calculated using the local density approximation method. While the former provides experimental evidence of the formation of nearly free-standing graphene on an SiC substrate, concomitant wit…
The analytic expressions for the maximum and minimum reflectance of optical films coated with gapped graphene are derived in the application region of the Dirac model with account of multiple reflections. The respective film thicknesses are also found. In so doing the film material is described by the frequency-dependent index of refraction and graphene by the polarization tensor defined along the real frequency axis. The developed formalism is illustrated by an example of the graphene-coated film made of amorphous silica. Numerical computations of the maximum and minimum reflectances and resp…
We consider the interaction of gapped graphene in the two-band approximation using an explicit time-dependent approach. In addition to the full high-order harmonic generation (HHG) spectrum, we also obtain the perturbative harmonic response using the time-dependent method at photon energies covering all the significant features in the responses. The transition from the perturbative to the fully non-perturbative regime of HHG at these photon energies is studied in detail.
In this study we report our numerical results on finite temperature non-interacting dynamical polarization function, plasmon modes and electron energy loss function of doped single layer gapped graphene within the random phase approximation. We find that the interplay of linear energy band dispersion, chirality, bandgap and temperature endow single layer gapped graphene with strange polarizability behaviour which is a mixture of 2DEG, single layer and bilayer graphene and as a result the plasmon spectrum also manifests strikingly peculiar behaviour. The plasmon dispersion is observed to be sup…
Application of a perpendicular electric field induces a band gap in bilayer graphene, and it also creates a "Mexican hat" structure in the dispersion relation. This structure has unusual implications for the hydrogen-like bound state of an electron to a Coulomb impurity. We calculate the ground state energy of this hydrogen-like state as a function of the applied interlayer voltage and the effective fine structure constant. Unlike in the normal hydrogen atom, the resulting wavefunction has many nodes even in the ground state. Further, the electron state undergoes "atomic collapse" into the Dir…
The second-order nonlinear optical susceptibility $Π^{(2)}$ for second harmonic generation is calculated for gapped graphene. The linear and second-order nonlinear plasmon excitations are investigated in context of second harmonic generation (SHG). We report a red shift and an order of magnitude enhancement of the SHG resonance with growing gap, or alternatively, reduced electro-chemical potential.
We study the optical conductivity of a doped graphene when a sublattice symmetry breaking is occurred in the presence of the electron-phonon interaction. Our study is based on the Kubo formula that is established upon the retarded self-energy. We report new features of both the real and imaginary parts of the quasiparticle self-energy in the presence of a gap opening. We find an analytical expression for the renormalized Fermi velocity of massive Dirac Fermions over broad ranges of electron densities, gap values and the electron-phonon coupling constants. Finally we conclude that the inclusion…
We use a self-consistent Hartree-Fock approximation with realistic Coulomb interactions for $π$-band electrons to explore the possibility of broken symmetry states in weakly disordered ABC stacked trilayer graphene. The competition between gapped and gapless broken symmetry states, and normal states is studied by comparing total energies. We find that gapped states are favored and that, unlike the bilayer case, gapless nematic broken symmetry states are not metastable. Among the gapped states the layer antiferromagnetic state is favored over anomalous and spin Hall states.
We study theoretically the interaction of ultrashort optical pulses with gapped graphene. Such strong pulse results in finite conduction band population and corresponding electric current both during and after the pulse. Since gapped graphene has broken inversion symmetry, it has an axial symmetry about the $y$-axis but not about the $x$-axis. We show that, in this case, if the linear pulse is polarized along the $x$-axis, the rectified electric current is generated in the $y$ direction. At the same time, the conduction band population distribution in the reciprocal space is symmetric about th…
The wavefunction of massless Dirac fermions is a two-component spinor. In graphene, a one-atom-thick film showing two-dimensional Dirac-like electronic excitations, the two-component representation reflects the amplitude of the electron wavefunction on the A and B sublattices. This unique property provides unprecedented opportunities to image the two components of massless Dirac fermions spatially. Here we report atomic resolution imaging of the two-component Dirac-Landau levels in a gapped graphene monolayer by scanning tunnelling microscopy and spectroscopy. A gap of about 20 meV, driven by …
In this paper, we numerically study the bound electron states induced by long range Coulomb impurity in gapped graphene and the quasi-bound states in supercritical region based on the lattice model. We present a detailed comparison between our numerical simulations and the prediction of the continuum model which is described by the Dirac equation in (2+1)-dimensional Quantum Electrodynamics (QED). We also use the Fano's formalism to investigate the quasi-bound state development and design an accessible experiments to test the decay of the supercritical vacuum in the gapped graphene.
In this paper, the electronic band structures and its transport properties in the gapped graphene superlattices, with one-dimensional (1D) periodic potentials of square barriers, are systematically investigated. It is found that a zero averaged wave-number (zero-$\overline{k}$ ) gap is formed inside the gapped graphene-based superlattices, and the condition for obtaining such a zero-$\overline{k}$ gap is analytically presented. The properties of this zero-$\overline{k}$ gap including its transmission, conductance and Fano factor are studied in detail. Finally it is revealed that the properties…
Energy levels of screened charged impurity in gapped graphene under magnetic field
Department of Physics and Computer Science, Medgar Evers College of City University of New York（纽约市立大学梅加·伊弗斯学院物理与计算机科学系）；Bogolyubov Institute for Theoretical Physics（博戈留博夫理论物理研究所）
We present a low-energy effective-mass theory to describe chiral orbital current and anomalous magnetic moment in graphenes with band gap and related materials. We show that a Bloch electron generally contains an anomalous current density due to inter-band matrix elements, which describes a chiral current circulation associated with magnetic moment. In gapped graphenes, the chiral current is opposite between different valleys, and corresponding magnetic moment accounts for valley splitting of Landau levels. In gapped bilayer graphene, in particular, the valley-dependent magnetic moment is resp…
Since the first realization of reversible charge doping in graphene via field-effect devices, it has become evident how the induction a gap could further enhance its potential for technological applications. Here we show that the gap opening due to a sublattice symmetry breaking has also a profound impact on the polar response of graphene. By combining ab-initio calculations and analytical modelling we show that for realistic band-gap values ($Δ\lesssim 0.5$ eV) the piezoelectric coefficient and the Born effective charge of graphene attain a giant value, independent on the gap. In particular t…
Numerical and closed-form analytic expressions for plasmon dispersion relations and rates of dissipation are first obtained at finite-temperatures for free-standing gapped graphene. These closed-system results are generalized to an open system with Coulomb coupling of graphene electrons to an external electron reservoir. New plasmon modes, as well as new plasmon dissipation channels, are found in this open system, including significant modifications arising from the combined effect of thermal excitation of electrons and an energy bandgap in gapped graphene. Moreover, the characteristics of the…
We investigate the energy spectrum, wave functions, and local density of states of an electrical dipole placed on a sheet of gapped graphene as function of the charge strength Zα for different sizes of the dipole and for different regularization parameters. The dipole is modeled as consisting of a positive and negative charge. Bound states are found within the gap region with some energy levels that anticross and others that cross as function of the impurity strength Zα. The anticrossings are more pronounced and move to higher charges Zα when the length of the dipole decreases. These energy le…
A new type of self-similar potential is used to study a multibarrier system made of graphene. Such potential is based on the traditional middle third Cantor set rule combined with a scaling of the barriers height. The resulting transmission coefficient for charge carriers, obtained using the quantum relativistic Dirac equation, shows a surprising self-similar structure. The same potential does not lead to a self-similar transmission when applied to the typical semiconductors described by the non-relativistic Schrödinger equation. The proposed system is one of the few examples in which a self-s…
In this work, we present numerical results for the second and third order conductivities of the plain graphene and gapped graphene monolayers associated with the second and third harmonic generation, the optical rectification and the optical Kerr effect. The frequencies considered here range from the microwave to the ultraviolet portion of the spectrum, the latter end of which had not yet been studied. These calculations are performed in the velocity gauge and directly address the components of the conductivity tensor. In the velocity gauge, the radiation field is represented by a power series…
In the current work we have investigated the influence of the Rashba spin-orbit coupling on spin-current of a single layer gapped graphene. It was shown that the Rashba coupling has a considerable role in generation of the spin-current of vertical spins in mono-layer graphene. The behavior of the spin-current is determined by density of impurities. It was also shown that the spin-current of the system could increase by increasing the Rashba coupling strength and band-gap of the graphene and the sign of the spin-current could be controlled by the direction of the current-driving electric field.
We study a gapped graphene monolayer in a combination of uniform magnetic field and strain-induced uniform pseudomagnetic field. The presence of two fields completely removes the valley degeneracy. The resulting density of states shows a complicated behaviour that can be tuned by adjusting the strength of the fields. We analyze how these features can be observed in the sublattice, valley and full density of states. The analytical expression for the valley DOS is derived.
The electronic properties of a particular class of domain walls in gapped graphene are investigated. We show that they can support mid-gap states which are localized in the vicinity of the domain wall and propagate along its length. With a finite density of domain walls, these states can alter the electronic properties of gapped graphene significantly. If the mid-gap band is partially filled,the domain wall can behave like a one-dimensional metal embedded in a semi-conductor, and could potentially be used as a single-channel quantum wire.
We investigate the strain effect on the Goos-Hänchen (GH) shifts and group delay time for transmitted Dirac fermions in gapped graphene through a single barrier potential. The solutions of energy spectrum are used to compute the transmission probabilities together with the GH shifts and group delay time. Our results show that the two last quantities are strongly depending to weather the strain is applied along armchair or zigzag directions. In particular it found that both of quantities can be enhanced with the applied strain.
Friedel oscillation is a well-known wave phenomenon, which represents the oscillatory response of electron waves to imperfection. By utilizing the pseudospin-momentum locking in gapless graphene, two recent experiments demonstrate the measurement of the topological Berry phase by corresponding to the unique number of wavefront dislocations in Friedel oscillations. Here, we study the Friedel oscillations in gapped graphene, in which the pseudospin-momentum locking is broken. Unusually, the wavefront dislocations do occur as that in gapless graphene, which expects the immediate verification in t…
We model the quantum Hall effect in heterostructures made of two gapped graphene stripes with different gaps, $Δ_1$ and $Δ_2$. We consider two main situations, $Δ_1=0,Δ_2\neq0$ and $Δ_1=-Δ_2$. They are different in a fundamental aspect: only the latter feature kink states that, when intervalley coupling is absent, are protected against backscattering. We compute the two terminal conductance of heterostructures with channel length up to 430 nm, in two transport configurations, parallel and perpendicular to the interface. By studying the effect of disorder on the transport along the boundary, we…
In the model of gapped graphene, we have shown how the recently predicted topological resonances are solely related to the presence of an energy band gap at the $K$ and $K^\prime$ points of the Brillouin zone. In the field of a strong single-oscillation chiral (circularly-polarized) optical pulse, the topological resonance causes the valley-selective population of the conduction band. This population distribution represents a chiral texture in the reciprocal space that is structured with respect to the pulse separatrix as has earlier been predicted for transition metal dichalcogenides. As the …
For gapped graphene, we predict that an intense ultrashort (single-oscillation) circularly-polarized optical pulse can induce a large population of the conduction band and a large valley polarization. With an increase in the bandgap, the magnitude of the valley polarization gradually increases from zero (for the native gapless graphene) to a value on the order of unity. The energy bandwidth of the electrons excited into the conduction band can be very large ($\gtrsim 10$ eV for a reasonable pulse amplitude of $\sim 0.5$ $\mathrm{V/Å}$). These phenomena are due to the effect of topological reso…
The electrical conductivity of graphene with a nonzero mass-gap parameter is investigated starting from the first principles of quantum electrodynamics in (2+1)-dimensional space-time at any temperature. The formalism of the polarization tensor defined over the entire plane of complex frequency is used. At zero temperature we reproduce the results for both real and imaginary parts of the conductivity, obtained previously in the local approximation, and generalize them taking into account the effects of nonlocality. At nonzero temperature the exact analytic expressions for real and imaginary pa…
We investigate the Goos-Hänchen shift for ballistic electrons (i) reflected from a step-like inhomogeneity of the potential energy and (or) effective mass, and (ii) transmitted through a ferromagnetic barrier region in monolayer silicene or gapped graphene. For the electrons reflected from a single interface we found that the Goos-Hänchen shift is valley-polarized for gapped graphene structure, and valley- and spin-polarized for silicene due to the spin-valley coupling. Incontrast, for example, to gapless graphene the lateral beam shift in gapped structures occurs not only in the case of total…
We formulate and solve the perhaps simplest two-body bound state problem for interacting Dirac fermions in two spatial dimensions. A two-body bound state is predicted for gapped graphene monolayers in the presence of weakly repulsive electron-electron interactions and a Coulomb impurity with charge $Ze>0$, where the most interesting case corresponds to $Z=1$. We introduce a variational Chandrasekhar-Dirac spinor wave function and show the existence of at least one bound state. This state leaves clear signatures accessible by scanning tunneling microscopy. One may thereby obtain direct informat…
We investigate the unusual features of the quantum transport in gapped monolayer graphene, which is in a pseudospin symmetry-broken state with a net perpendicular pseudomagnetization. Using these pseudoferromagnets (PFs), we propose a perfect pseudospin valve effect that can be used for realizing pseudospintronics in monolayer graphene. The peculiarity of the associated effects of pseudo spin injection and pseudo spin accumulation are also studied. We further demonstrate the determining effect of the sublattice pseudospin degree of freedom on Andreev reflection and the associated proximity eff…
Recent observation of a metal-insulator phase transition in the $ν=0$ Hall state of graphene has inspired the idea that charge carriers in the metallic state could be fractionally charged vortices. We examine the question of whether vortices in particular gapped states of graphene and subject to external magnetic and pseudo-magnetic fields could have the mid-gap zero mode electron states which would allow them to be charged.
We use a perturbative renormalization group approach with short-range continuum model interactions to analyze the competition between isotropic gapped and anisotropic gapless ordered states in bilayer graphene, commenting specifically on the role of exchange and on the importance of spin and valley flavor degeneracy. By comparing the divergences of the corresponding susceptibilities, we conclude that this approach predicts gapped states for flavor numbers N=1,2,4. We also comment briefly on the related gapped states expected in chiral (ABC) trilayer graphene.
We predict the formation and superfluidity of polaritons in an optical microcavity formed by excitons in gapped graphene embedded there and microcavity photons. The Rabi splitting related to the creation of an exciton in a graphene layer in the presence of the band gap is obtained. The analysis of collective excitations as well as the sound velocity is presented. We show that the superfluid density and temperature of the Kosterlitz-Thouless phase transition are decreasing functions of the energy gap.
We study theoretically the strong-field absorption of an ultrafast optical pulse by a gapped graphene monolayer. At low field amplitudes, the absorbance in the pristine graphene is equal to the universal value of $2.3$ percent. Although the ultrafast optical absorption for low field amplitudes is independent of the polarization, linear or circular, of the applied optical pulse, for high field amplitudes, the absorption strongly depends on the pulse polarization. For a linearly polarized pulse, the optical absorbance is saturated at the value of $\approx 1.4$ percent for the pulse's amplitude o…
Using the microscopic nonlinear quantum theory of interaction of strong coherent electromagnetic radiation with a gapped bilayer graphene is developed for high harmonic generation at low-energy photon excitation-induced Lifshitz transitions. The Liouville-von Neumann equation for the density matrix is solved numerically at the nonadiabatic multiphoton excitation regime. By numerical solutions, we examine the rates of the second and third harmonics generation at the particle-hole annihilation in induced Lifshitz transitions by the two linearly polarized coherent electromagnetic waves propagatin…
Microscopic nonlinear quantum theory of interaction of coherent electromagnetic radiation with gapped bilayer graphene is developed. The Liouville-von Neumann equation for the density matrix is solved numerically at the multiphoton excitation regime. The developed theory of interaction of charged carriers with strong driving wave field is valid near the Dirac points of the Brillouin zone. We consider the harmonic generation process in the nonadiabatic regime of interaction when the Keldysh parameter is of the order of unity. On the basis of numerical solutions, we examine the rates of odd and …
Recent experiments have revealed that novel nonequilibrium states consistent with the hydrodynamic description of electrons are realized in ultrapure graphene, which hosts the valley degrees of freedom. Here, we formulate a theory of electron hydrodynamics including dissipation processes of the valley angular momentum by employing the concept of micropolar fluids. As a result, our theory proposes a novel strategy to generate a valley polarization by the microrotation. We uncover that the rotational viscosity induces longitudinal valley currents which are second order in electric fields.
Electronic states at domain walls in bilayer graphene are studied by analyzing their four and two band continuum models, by performing numerical calculations on the lattice, and by using quantum geometric arguments. The continuum theories explain the distinct electronic properties of boundary modes localized near domain walls formed by interlayer electric field reversal, by interlayer stacking reversal, and by simultaneous reversal of both quantities. Boundary mode properties are related to topological transitions and gap closures which occur in the bulk Hamiltonian parameter space. The import…
We propose a scheme to trap and filter electrons, valley dependently, on a scale beyond the diffraction limit, in a gapped Dirac system using a circularly polarized light beam and a microscale metallic resonator. The main mechanism allowing the selection is the valley dependent break of the time reversal symmetry. Indeed in one valley, the light partially closes the already existing gap while it opens it in the other one. This difference in the band structure close to the Dirac points, induces a change in the dynamics of the electrons, leading to a valley router behaviour of the system.
