Graphene, as an atomic-thick ultrasoft membrane, almost has no resistance against out-of-plane deformations and, therefore, it is always wrinkled to a certain degree. Recently, corrugated structures and their effects on the electronic properties of monolayer graphene have been studied extensively. However, similar experimental studies in bilayer graphene have yet to be reported. Here, we show that corrugations in bilayer graphene can generate incommensurate stacking solitons (domain walls) between commensurate Bernal-stacked domains. By using scanning tunneling microscopy, we microscopically study electronic structures of a corrugation-induced stacking soliton that separates two adjacent AB and BA stacked bilayer regions with a uniform interlayer potential difference. Both topological gapless edge states and quasi-localized gapped quantum-well-like states are observed in the nanoscale corrugation. Atomic resolution mapping of the topological edge states along the stacking soliton reveals the existence of intervalley scattering between them, which could explain recent experiments where the conductance along domain walls of gapped graphene bilayer is smaller than a quantized value 4e2 h.
Utilizing spin-polarized scanning tunneling microscopy and spectroscopy, we found coexistence of perpendicularly and in-plane magnetized cobalt nanoscale islands on the Ag(111) surface, and the relationship between the moire corrugation amplitude and the magnetization direction of the islands; the islands with the stronger moire corrugation show the perpendicular magnetization, and the ones with the weaker moire corrugation do the in-plane. Density functional theory calculations reproduce the relationship and explain the differences between the two types of the islands with an fcc stacking fau…
Gated trilayer graphene exhibits energy gap in its most stable ABC stacking. Here we show that when the stacking order changes from ABC to CBA, three gapless states appear in each valley. The states are topologically protected and their number is related to the change of the valley Chern number across the stacking boundary. The stacking change is achieved by corrugation or delamination in the top and bottom layers, which simultaneously yields two AB/BA stacking domain walls in the pairs of adjacent layers (in bilayers). This in turn causes that for some gate voltages two pairs of topological r…
Graphene layers are known to stack in two stable configurations, namely ABA or ABC stacking, with drastically distinct electronic properties. Unlike the ABA stacking, little has been done to experimentally investigate the electronic properties of ABC graphene multilayers. Here, we report the first magneto optical study of a large ABC domain in a graphene multilayers flake, with ABC sequences exceeding 17 graphene sheets. The ABC-stacked multilayers can be fingerprinted with a characteristic electronic Raman scattering response, which persists even at room temperatures. Tracing the magnetic fie…
Realization of high-quality van der Waals (vdW) heterostructures with tailored properties by stacking two-dimensional (2D) layers requires atomically clean interfaces. Because of strong adhesion between the constituent layers, the vdW forces could drive trapped contaminants together into submicron-size bubbles, which leaves large interfacial areas atomically clean. Such a phenomenon is dubbed self-cleaning mechanism in 2D systems. Here, we demonstrate the breakdown of self-cleaning mechanism for nanoscale interfacial bubbles in tiny-angle twisted bilayer graphene (TBG). In the tiny-angle TBG, …
We investigate the magnetotransport properties of quasi-free standing epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization in Ar, followed by H$_2$ intercalation. At the charge neutrality point the longitudinal resistance shows an insulating behavior, which follows a temperature dependence consistent with variable range hopping transport in a gapped state. In a perpendicular magnetic field, we observe quantum Hall states (QHSs) both at filling factors ($ν$) multiple of four ($ν=4, 8, 12$), as well as broken valley symmetry QHSs at $ν=0$ and $ν=6$. These results unamb…
Electronic states at domain walls in bilayer graphene are studied by analyzing their four and two band continuum models, by performing numerical calculations on the lattice, and by using quantum geometric arguments. The continuum theories explain the distinct electronic properties of boundary modes localized near domain walls formed by interlayer electric field reversal, by interlayer stacking reversal, and by simultaneous reversal of both quantities. Boundary mode properties are related to topological transitions and gap closures which occur in the bulk Hamiltonian parameter space. The import…
In this work we performed density functional theory calculations for a twisted bilayer graphene (BLG). Several conmensurable rotation angles were analyzed and for each one a constant height mode STM image was obtained. These STM images, calculated under the Tersoff-Hamman theory, reproduce the main features experimentally observed, paticularly superstructures and giant corrugations. In this way we confirm that STM characterization of twisted BLG can produce superstructures whose tunneling current intensity maxima occur over regions with $AA$ stacking. Additionally we give new evidence in favou…
We study the stability and electronic structure of magic-angle twisted bilayer graphene on the hexagonal boron nitride (TBG/BN). Full relaxation has been performed for commensurate supercells of the heterostructures with different twist angles ($θ'$) and stackings between TBG and BN. We find that the slightly misaligned configuration with $θ' = 0.54^\circ$ and the AA/AA stacking has the globally lowest total energy due to the constructive interference of the moiré interlayer potentials and thus the greatly enhanced relaxation in its $1 \times 1$ commensurate supercell. Gaps are opened at the F…
We apply the mean-field Hartree Fock theory of gapped electronic states at charge neutrality in bilayer graphene to thin films of rhombohedral graphite with up to thirty layers. For the ground state, the order parameter (the separation of bands at the valley center) saturates to a constant non-zero value as the layer number increases, whereas the band gap decreases with layer number. We consider chiral symmetry breaking disorder in the form of random layer potentials and chiral preserving disorder in the form of random values of the interlayer coupling. The former reduces the magnitude of the …
In minimally twisted bilayer graphene, a moir{é} pattern consisting of AB and BA stacking regions separated by domain walls forms. These domain walls are predicted to support counterpropogating topologically protected helical (TPH) edge states when the AB and BA regions are gapped. We fabricate designer moir{é} crystals with wavelengths longer than 50 nm and demonstrate the emergence of TPH states on the domain wall network by scanning tunneling spectroscopy measurements. We observe a double-line profile of the TPH states on the domain walls, only occurring when the AB and BA regions are gappe…
The conductance through single-layer graphene (SLG) and AA/AB-stacked bilayer graphene (BLG) junctions is obtained by taking into account band gap and bias voltage terms. First, we consider gapped SLG, while in between, they are connected into pristine BLG. For Fermi energy larger than the interlayer hopping, the conductance as a function of the bilayer region length $d$ reveals two different models of anti-resonances with the same period. As a function of the band gap, with AA-BLG stacking, the results show that the conductance has the same minima whatever the value of $d$, and for AB-BLG, $d…
The band structure of ABC-stacked N-layer graphene comprises topologically corresponding flat surface and gapped bulk subbands, as a consequence of the unique stacking configuration. In this paper, the bulk subbands are for the first times ever obtained for arbitrary N. A non-perturbative effective Hamiltonian closed in the bulk subspace is derived and used. The gapped bulk subbands are shown to evolve towards the zero energy with increasing N and in the infinite limit, they touch linearly along a circle. This outcome is a manifestation of the dimensional crossover to a three-dimensional Dirac…
The absorption energy of atomic hydrogen at rotated graphene bilayers is studied using ab initio methods based on the density functional theory including van der Waals interactions. We find that, due to the surface corrugation induced by the underneath rotated layer and the perturbation of the electronic density of states near the Fermi energy, the atoms with an almost AA stacking are the preferential ones for hydrogen chemisorption. The adsorption energy difference between different atoms can be as large as 80 meV. In addition, we find that, due to the logarithmic van Hove singularities in th…
An established way of realizing topologically protected states in a two-dimensional electron gas is by applying a perpendicular magnetic field thus creating quantum Hall edge channels. In electrostatically gapped bilayer graphene intriguingly, even in the absence of a magnetic field topologically protected electronic states can emerge at naturally occurring stacking domain walls. While individually both types of topologically protected states have been investigated, their intriguing interplay remains poorly understood. Here, we focus on the interplay between topological domain wall states and …
The stacking and bending of graphene are trivial but extremely powerful agents of control over graphene's manifold physics. By changing the twist angle, one can drive the system over a plethora of exotic states via strong electron correlation, thanks to the moiré superlattice potentials, while the periodic or triaxial strains induce discretization of the band structure into Landau levels without the need for an external magnetic field. We fabricated a hybrid system comprising both the stacking and bending tuning knobs. We have grown the graphene monolayers by chemical vapor deposition, using $…
We report experimental signatures of plasmonic effects due to electron tunneling between adjacent graphene layers. At sub-nanometer separation, such layers can form either a strongly coupled bilayer graphene with a Bernal stacking or a weakly coupled double-layer graphene with a random stacking order. Effects due to interlayer tunneling dominate in the former case but are negligible in the latter. We found through infrared nano-imaging that bilayer graphene supports plasmons with a higher degree of confinement compared to single- and double-layer graphene, a direct consequence of interlayer tu…
Close to a magical angle, twisted bilayer graphene (TBLG) systems exhibit isolated flat electronic bands and, accordingly, strong electron localization. TBLGs have hence been ideal platforms to explore superconductivity, correlated insulating states, magnetism, and quantized anomalous Hall states in reduced dimension. Below a threshold twist angle ($\sim$ $1.1^\circ$), the TBLG superlattice undergoes lattice reconstruction, leading to a periodic moiré structure which presents a marked atomic corrugation. Using a tight-binding framework, this research demonstrates that superlattice reconstructi…
We show that delaminations in bilayer graphene (BLG) with electrostatically induced interlayer asymmetry can provide one with ballistic channels for electrons with energies inside the electrostatically induced BLG gap. These channels are formed by a combination of valley-polarised evanescent states propagating along the delamination edges (which persist in the presence of a strong magnetic field) and standing waves bouncing between them inside the delaminated region (in a strong magnetic field, these transform into Landau levels in the monolayers). For inverted stacking between BLGs on the lef…
Stacking two graphene layers twisted by the 'magic angle' $θ\approx 1.1^\circ$ generates flat energy bands, which in turn catalyzes various strongly correlated phenomena depending on filling and sample details. At charge neutrality, transport measurements reveal superficially mundane semimetallicity (as expected when correlations are weak) in some samples yet robust insulation in others. We propose that the interplay between interactions and disorder admits either behavior, even when the system is strongly correlated and locally gapped. Specifically, we argue that strong interactions supplemen…
Multilayer graphene with rhombohedral and Bernal stacking are supposed to be metallic, as predicted by density functional theory calculations using semi-local functionals. However recent angular resolved photoemission and transport data have questioned this point of view. In particular, rhombohedral flakes are suggested to be magnetic insulators. Bernal flakes composed of an even number of layers are insulating, while those composed of an odd number of layers are pseudogapped. Here, by systematically benchmarking with plane waves codes, we develop very accurate all-electron Gaussian basis sets…
We study electronic, charge, and magnetic properties of twisted bilayer graphene with fillings $2\leq n\leq 6$ per moire unit cell within the recently introduced formulation of extended dynamical mean-field theory (E-DMFT) for two-sublattice systems. We use previously obtained hopping parameters between the states, described by Wannier functions, centered at the lattice spots of AB and BA stacking, and the long-range Coulomb interaction, obtained within cRPA analysis. We show that account of spin exchange between AB and BA nearest neighbour spots is crucial to introduce charge and spin correla…
Magic-angle twisted trilayer graphene (MATTG) has emerged as a novel moiré material that exhibits both strong electronic correlations and unconventional superconductivity. However, spectroscopic studies of its electronic properties are lacking, and the nature of superconductivity and the corresponding order parameter in this system remain elusive. Here we perform high-resolution scanning tunneling microscopy and spectroscopy of MATTG and reveal extensive regions of atomic reconstruction that favor mirror-symmetric stacking. In these regions, we observe a cascade of symmetry-breaking electronic…
