We study theoretically the interaction of ultrashort optical pulses with gapped graphene. Such strong pulse results in finite conduction band population and corresponding electric current both during and after the pulse. Since gapped graphene has broken inversion symmetry, it has an axial symmetry about the $y$-axis but not about the $x$-axis. We show that, in this case, if the linear pulse is polarized along the $x$-axis, the rectified electric current is generated in the $y$ direction. At the same time, the conduction band population distribution in the reciprocal space is symmetric about the $x$-axis. Thus, the rectified current in gapped graphene has inter-band origin, while the intra-band contribution to the rectified current is zero.
We study theoretically the strong-field absorption of an ultrafast optical pulse by a gapped graphene monolayer. At low field amplitudes, the absorbance in the pristine graphene is equal to the universal value of $2.3$ percent. Although the ultrafast optical absorption for low field amplitudes is independent of the polarization, linear or circular, of the applied optical pulse, for high field amplitudes, the absorption strongly depends on the pulse polarization. For a linearly polarized pulse, the optical absorbance is saturated at the value of $\approx 1.4$ percent for the pulse's amplitude o…
In the model of gapped graphene, we have shown how the recently predicted topological resonances are solely related to the presence of an energy band gap at the $K$ and $K^\prime$ points of the Brillouin zone. In the field of a strong single-oscillation chiral (circularly-polarized) optical pulse, the topological resonance causes the valley-selective population of the conduction band. This population distribution represents a chiral texture in the reciprocal space that is structured with respect to the pulse separatrix as has earlier been predicted for transition metal dichalcogenides. As the …
We report our theoretical calculations on the temperature and energy dependent electrical conductivity of gapped graphene within the framework of Boltzmann transport formalism. Since screening effects have known to be of vital importance in explaining the conductivity of gapless graphene therefore we first worked out the behaviour of the temperature dependent polarization function for gapped graphene as a function of wave vector and band gap, respectively. Polarization of gapped graphene has been compared with that of gapless graphene, bilayer graphene and 2DEG to see the effects of gap. It is…
In this study we report our numerical results on finite temperature non-interacting dynamical polarization function, plasmon modes and electron energy loss function of doped single layer gapped graphene within the random phase approximation. We find that the interplay of linear energy band dispersion, chirality, bandgap and temperature endow single layer gapped graphene with strange polarizability behaviour which is a mixture of 2DEG, single layer and bilayer graphene and as a result the plasmon spectrum also manifests strikingly peculiar behaviour. The plasmon dispersion is observed to be sup…
The second-order nonlinear optical susceptibility $Π^{(2)}$ for second harmonic generation is calculated for gapped graphene. The linear and second-order nonlinear plasmon excitations are investigated in context of second harmonic generation (SHG). We report a red shift and an order of magnitude enhancement of the SHG resonance with growing gap, or alternatively, reduced electro-chemical potential.
We use a self-consistent Hartree-Fock approximation with realistic Coulomb interactions for $π$-band electrons to explore the possibility of broken symmetry states in weakly disordered ABC stacked trilayer graphene. The competition between gapped and gapless broken symmetry states, and normal states is studied by comparing total energies. We find that gapped states are favored and that, unlike the bilayer case, gapless nematic broken symmetry states are not metastable. Among the gapped states the layer antiferromagnetic state is favored over anomalous and spin Hall states.
We theoretically investigate the ultrafast terahertz(THz) properties of monolayer graphene. The analytical formulations of the photon carrier, electric polarization and optical current are obtained by solving the Bloch-equations in present of the ultrafast THz Gaussian pulse. Graphene shows a large nonlinear and ultrafast optical response at THz frequencies due to the gapless and relativistic Dirac particles with nearly linear energy dispersion. It is found that the photon carrier density, electric polarization and optical current density increase with increasing the frequency of the THz pulse…
In this paper, we numerically study the bound electron states induced by long range Coulomb impurity in gapped graphene and the quasi-bound states in supercritical region based on the lattice model. We present a detailed comparison between our numerical simulations and the prediction of the continuum model which is described by the Dirac equation in (2+1)-dimensional Quantum Electrodynamics (QED). We also use the Fano's formalism to investigate the quasi-bound state development and design an accessible experiments to test the decay of the supercritical vacuum in the gapped graphene.
In this paper, the electronic band structures and its transport properties in the gapped graphene superlattices, with one-dimensional (1D) periodic potentials of square barriers, are systematically investigated. It is found that a zero averaged wave-number (zero-$\overline{k}$ ) gap is formed inside the gapped graphene-based superlattices, and the condition for obtaining such a zero-$\overline{k}$ gap is analytically presented. The properties of this zero-$\overline{k}$ gap including its transmission, conductance and Fano factor are studied in detail. Finally it is revealed that the properties…
We present a low-energy effective-mass theory to describe chiral orbital current and anomalous magnetic moment in graphenes with band gap and related materials. We show that a Bloch electron generally contains an anomalous current density due to inter-band matrix elements, which describes a chiral current circulation associated with magnetic moment. In gapped graphenes, the chiral current is opposite between different valleys, and corresponding magnetic moment accounts for valley splitting of Landau levels. In gapped bilayer graphene, in particular, the valley-dependent magnetic moment is resp…
Numerical and closed-form analytic expressions for plasmon dispersion relations and rates of dissipation are first obtained at finite-temperatures for free-standing gapped graphene. These closed-system results are generalized to an open system with Coulomb coupling of graphene electrons to an external electron reservoir. New plasmon modes, as well as new plasmon dissipation channels, are found in this open system, including significant modifications arising from the combined effect of thermal excitation of electrons and an energy bandgap in gapped graphene. Moreover, the characteristics of the…
In this work, we present numerical results for the second and third order conductivities of the plain graphene and gapped graphene monolayers associated with the second and third harmonic generation, the optical rectification and the optical Kerr effect. The frequencies considered here range from the microwave to the ultraviolet portion of the spectrum, the latter end of which had not yet been studied. These calculations are performed in the velocity gauge and directly address the components of the conductivity tensor. In the velocity gauge, the radiation field is represented by a power series…
In the current work we have investigated the influence of the Rashba spin-orbit coupling on spin-current of a single layer gapped graphene. It was shown that the Rashba coupling has a considerable role in generation of the spin-current of vertical spins in mono-layer graphene. The behavior of the spin-current is determined by density of impurities. It was also shown that the spin-current of the system could increase by increasing the Rashba coupling strength and band-gap of the graphene and the sign of the spin-current could be controlled by the direction of the current-driving electric field.
We study a gapped graphene monolayer in a combination of uniform magnetic field and strain-induced uniform pseudomagnetic field. The presence of two fields completely removes the valley degeneracy. The resulting density of states shows a complicated behaviour that can be tuned by adjusting the strength of the fields. We analyze how these features can be observed in the sublattice, valley and full density of states. The analytical expression for the valley DOS is derived.
We investigate the strain effect on the Goos-Hänchen (GH) shifts and group delay time for transmitted Dirac fermions in gapped graphene through a single barrier potential. The solutions of energy spectrum are used to compute the transmission probabilities together with the GH shifts and group delay time. Our results show that the two last quantities are strongly depending to weather the strain is applied along armchair or zigzag directions. In particular it found that both of quantities can be enhanced with the applied strain.
Friedel oscillation is a well-known wave phenomenon, which represents the oscillatory response of electron waves to imperfection. By utilizing the pseudospin-momentum locking in gapless graphene, two recent experiments demonstrate the measurement of the topological Berry phase by corresponding to the unique number of wavefront dislocations in Friedel oscillations. Here, we study the Friedel oscillations in gapped graphene, in which the pseudospin-momentum locking is broken. Unusually, the wavefront dislocations do occur as that in gapless graphene, which expects the immediate verification in t…
We model the quantum Hall effect in heterostructures made of two gapped graphene stripes with different gaps, $Δ_1$ and $Δ_2$. We consider two main situations, $Δ_1=0,Δ_2\neq0$ and $Δ_1=-Δ_2$. They are different in a fundamental aspect: only the latter feature kink states that, when intervalley coupling is absent, are protected against backscattering. We compute the two terminal conductance of heterostructures with channel length up to 430 nm, in two transport configurations, parallel and perpendicular to the interface. By studying the effect of disorder on the transport along the boundary, we…
Electronic states in 2D materials can exhibit pseudospin degrees of freedom, which allow for unique carrier-field interaction scenarios. Here, we investigate ultrafast sublattice pseudospin relaxation in graphene by means of polarization-resolved photoluminescence spectroscopy. Comparison with microscopic Boltzmann simulations allows to determine a lifetime of the optically aligned pseudospin distribution of $12\pm 2\,\text{fs}$. This experimental approach extends the toolbox of graphene pseudospintronics, providing novel means to investigate pseudospin dynamics in active devices or under exte…
Understanding the ultrafast carrier dynamics of graphene on a substrate is a fundamental step in the development of graphene based opto-electronic devices. Here, we present ultrafast pump-probe measurements of supported graphene on quartz for a range of pump fluences that enable us to observe both decreased and enhanced probe transmission regimes on a femtosecond timescale. Unexpectedly, at an intermediate pump fluence, an order of magnitude decrease in the relaxation time constant of the differential transmission is observed. By employing a number of different models to interpret our experime…
Graphene is emerging as a viable alternative to conventional optoelectronic, plasmonic, and nanophotonic materials. The interaction of light with carriers creates an out-of-equilibrium distribution, which relaxes on an ultrafast timescale to a hot Fermi-Dirac distribution, that subsequently cools via phonon emission. Here we combine pump-probe spectroscopy, featuring extreme temporal resolution and broad spectral coverage, with a microscopic theory based on the quantum Boltzmann equation, to investigate electron-electron collisions in graphene during the very early stages of relaxation. We ide…
For gapped graphene, we predict that an intense ultrashort (single-oscillation) circularly-polarized optical pulse can induce a large population of the conduction band and a large valley polarization. With an increase in the bandgap, the magnitude of the valley polarization gradually increases from zero (for the native gapless graphene) to a value on the order of unity. The energy bandwidth of the electrons excited into the conduction band can be very large ($\gtrsim 10$ eV for a reasonable pulse amplitude of $\sim 0.5$ $\mathrm{V/Å}$). These phenomena are due to the effect of topological reso…
We investigate the Goos-Hänchen shift for ballistic electrons (i) reflected from a step-like inhomogeneity of the potential energy and (or) effective mass, and (ii) transmitted through a ferromagnetic barrier region in monolayer silicene or gapped graphene. For the electrons reflected from a single interface we found that the Goos-Hänchen shift is valley-polarized for gapped graphene structure, and valley- and spin-polarized for silicene due to the spin-valley coupling. Incontrast, for example, to gapless graphene the lateral beam shift in gapped structures occurs not only in the case of total…
We present a joint theory-experiment study on ultrafast photoluminescence from photoexcited graphene. Based on a microscopic theory, we reveal two distinct mechanisms behind the occurring photoluminescence: Besides the well-known incoherent contribution driven by non-equilibrium carrier occupations, we found a coherent part that spectrally shifts with the excitation energy. In our experiments, we demonstrate for the first time the predicted appearance and spectral shift of the coherent photoluminescence.
We formulate and solve the perhaps simplest two-body bound state problem for interacting Dirac fermions in two spatial dimensions. A two-body bound state is predicted for gapped graphene monolayers in the presence of weakly repulsive electron-electron interactions and a Coulomb impurity with charge $Ze>0$, where the most interesting case corresponds to $Z=1$. We introduce a variational Chandrasekhar-Dirac spinor wave function and show the existence of at least one bound state. This state leaves clear signatures accessible by scanning tunneling microscopy. One may thereby obtain direct informat…
We investigate the unusual features of the quantum transport in gapped monolayer graphene, which is in a pseudospin symmetry-broken state with a net perpendicular pseudomagnetization. Using these pseudoferromagnets (PFs), we propose a perfect pseudospin valve effect that can be used for realizing pseudospintronics in monolayer graphene. The peculiarity of the associated effects of pseudo spin injection and pseudo spin accumulation are also studied. We further demonstrate the determining effect of the sublattice pseudospin degree of freedom on Andreev reflection and the associated proximity eff…
We propose an ultrafast all-optical anomalous Hall effect in two-dimensional (2D) semiconductors of hexagonal symmetry such as gapped graphene (GG), transition metal dichalcogenides (TMDCs), and hexagonal boron nitride (h-BN). To induce such an effect, the material is subjected to a sequence of two strong-field single-optical-cycle pulses: a chiral pump pulse followed within a few femtoseconds by a probe pulse linearly polarized in the armchair direction of the 2D lattice. Due to the effect of topological resonance, the first (pump) pulse induces a large chirality (valley polarization) in the …
The fast decay of carrier inversion in photoexcited graphene has been attributed to optical phonon emission and Auger recombination. Plasmon emission provides another pathway that, as we show here, drives the carrier relaxation dynamics on ultrafast timescales. In studying the nonequilibrium relaxation dynamics we find that plasmon emission effectively converts inversion into hot carriers, whose energy is then extracted by optical phonon emission. This mechanism not only explains the observed fs-lifetime of inversion but also offers the prospect for atomically thin ultrafast plasmon emitters.
Using the microscopic nonlinear quantum theory of interaction of strong coherent electromagnetic radiation with a gapped bilayer graphene is developed for high harmonic generation at low-energy photon excitation-induced Lifshitz transitions. The Liouville-von Neumann equation for the density matrix is solved numerically at the nonadiabatic multiphoton excitation regime. By numerical solutions, we examine the rates of the second and third harmonics generation at the particle-hole annihilation in induced Lifshitz transitions by the two linearly polarized coherent electromagnetic waves propagatin…
Microscopic nonlinear quantum theory of interaction of coherent electromagnetic radiation with gapped bilayer graphene is developed. The Liouville-von Neumann equation for the density matrix is solved numerically at the multiphoton excitation regime. The developed theory of interaction of charged carriers with strong driving wave field is valid near the Dirac points of the Brillouin zone. We consider the harmonic generation process in the nonadiabatic regime of interaction when the Keldysh parameter is of the order of unity. On the basis of numerical solutions, we examine the rates of odd and …
Recent experiments have revealed that novel nonequilibrium states consistent with the hydrodynamic description of electrons are realized in ultrapure graphene, which hosts the valley degrees of freedom. Here, we formulate a theory of electron hydrodynamics including dissipation processes of the valley angular momentum by employing the concept of micropolar fluids. As a result, our theory proposes a novel strategy to generate a valley polarization by the microrotation. We uncover that the rotational viscosity induces longitudinal valley currents which are second order in electric fields.
We propose a scheme to trap and filter electrons, valley dependently, on a scale beyond the diffraction limit, in a gapped Dirac system using a circularly polarized light beam and a microscale metallic resonator. The main mechanism allowing the selection is the valley dependent break of the time reversal symmetry. Indeed in one valley, the light partially closes the already existing gap while it opens it in the other one. This difference in the band structure close to the Dirac points, induces a change in the dynamics of the electrons, leading to a valley router behaviour of the system.
We study the static and dynamic screening of gapped bilayer graphene. Unlike previous works we use the 4-band model instead of the simplified 2-band model. We find that there are important qualitative differences between the dielectric screening function obtained using the 2-band and that obtained using the 4-band model. In particular within the 4-band model in the presence of a band-gap the static screening exhibits Kohn anomalies that are absent within the 2-band model. Moreover, using the 4-band model, we are able to examine the effect of trigonal warping (absent in the 2-band model) on the…
We present a theoretical study of gap opening in the zeroth Landau level in gapped graphene as a result of pseudo-Zeeman interaction. The applied magnetic field couples with the valley pseudospin degree of freedom of the charge carriers leading to the pseudo-Zeeman interaction. To investigate its role in transport at the Charge Neutrality Point (CNP), we study the integer quantum Hall effect (QHE) in gapped graphene in an angular magnetic field in the presence of pseudo-Zeeman interaction. Analytical expressions are derived for the Hall conductivity using Kubo-Greenwood formula. We also determ…
We show that the spectrum of subbands in an electrostatically defined quantum wire in gapped bilayer graphene directly manifests the minivalley structure and reflects Berry curvature via the associated magnetic moment of the states in the low-energy bands of this two-dimensional material. We demonstrate how these appear in degeneracies of the low-energy minibands and their valley splitting, which develops linearly in a weak magnetic field. Consequently, magneto-conductance of a ballistic point contact connecting two non-gapped areas of a bilayer through a gapped (top and bottom gated) barrier …
Ultrafast carrier dynamics of pristine bilayer graphene (BLG) and bilayer graphene intercalated with FeCl3 (FeCl3-G), were studied using time-resolved transient differential reflection (delta R/R). Compared to BLG, the FeCl3-G data showed an opposite sign of delta R/R, a slower rise time, and a single (instead of double) exponential relaxation. We attribute these differences in dynamics to the down-shifting of the Fermi level in FeCl3-G, as well as the formation of numerous horizontal bands arising from the d-orbitals of Fe. Our work shows that intercalation can dramatically change the electro…
An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these gaps rarely lead to a highly insulating state expected for such semiconductors at low temperatures. This long-standing puzzle is usually explained by charge inhomogeneity. Here we investigate spatial distributions of proximity-induced superconducting currents in gapped graphene and, also, compare measurements in the Hall bar and Corbino geometries in the normal state. By gradually opening the gap in bilayer graphene, …
Interband optical transitions in graphene are subject to pseudospin selection rules. Impulsive excitation with linearly polarized light generates an anisotropic photocarrier occupation in momentum space that evolves at timescales shorter than 100fs. Here, we investigate the evolution of non-equilibrium charges towards an isotropic distribution by means of fluence-dependent ultrafast spectroscopy and develop an analytical model able to quantify the isotropization process. In contrast to conventional semiconductors, the isotropization is governed by optical phonon emission, rather than electron-…
We have utilized the finite-difference approach to explore electron-tunneling properties in gapped graphene through various electrostatic-potential barriers changing from Gaussian to a triangular envelope function in comparison with a square potential barrier. Transmission coefficient is calculated numerically for each case and applied to corresponding tunneling conductance. It is well known that Klein tunneling in graphene will be greatly reduced in a gapped graphene. Our results further demonstrate that such a decrease of transmission can be significantly enhanced for spatially-modulated pot…
Using the ultrafast pump-probe transient absorption spectroscopy, the femtosecond-resolved plasmon-exciton interaction of graphene-Ag nanowire hybrids is experimentally investigated, in the VIS-NIR region. The plasmonic lifetime of Ag nanowire is about 150 femtosecond (fs). For a single layer of graphene, the fast dynamic process at 275 fs is due to the excitation of graphene excitons, and the slow process at 1.4 picosecond (ps) is due to the plasmonic hot electron interaction with phonons of graphene. For the graphene-Ag nanowire hybrids, the time scale of the plasmon-induced hot electron tra…
A study of the formation of excitons as a problem of two Dirac particles confined in two-layer graphene sheets separated by a dielectric when gaps are opened and they interact via a Coulomb potential is presented. We propose to observe Bose-Einstein condensation and superfluidity of quasi-two-dimensional dipole excitons in double layer graphene in the presence of band gaps. The energy spectrum of the collective excitations, the sound spectrum, and the effective exciton mass are functions of the energy gaps, density and interlayer separation. The superfluid density ns and temperature of the Kos…
We propose two schemes of field-effect transistor based on gapped armchair graphene nanoribbons connected to metal leads, by introducing sidearms or on-site gate voltages. We make use of the band gap to reach excellent switch-off character. By introducing one sidearm or on-site gate to the graphene nanoribbon, conduction peaks appear inside the gap regime. By further applying two sidearms or on-site gates, these peaks are broadened to conduction plateaus with a wide energy window, thanks to the resonance from the dual structure. The position of the conduction windows inside the gap can be full…
The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at graphene interfaces. Here, we perform time-resolved (~250 fs) scanning photocurrent microscopy on a tunable graphene pn junction. The ultrafast pump-probe measurements yield a photocurrent response time of ~1.5 ps at room temperature increasing to ~4 ps at 20 K. Combined with the negligible dependence of photocurrent amplitude on environmental temperature th…
We have measured the ultrafast anisotropic optical response of highly doped graphene to an intense single cycle terahertz pulse. The time profile of the terahertz-induced anisotropy signal at 800 nm has minima and maxima repeating those of the pump terahertz electric field modulus. It grows with increasing carrier density and demonstrates a specific nonlinear dependence on the electric field strength. To describe the signal, we have developed a theoretical model that is based on the energy and momentum balance equations and takes into account optical phonons of graphene and substrate. Accordin…
We show that the changes in the electronic density of states (DOS) in graphene induced by impurity scattering with short-range potentials are completely different from those caused by the long-range Coulomb potential. The spectral weight of the state that eventually disappears into the valence band (as the strength of scattering increases) does not transform into a resonance state. Therefore no unusual screening effects related to a redistribution of the density of states in the valence band are observed. The states induced by the short-range impurities in graphene, therefore, have distinctive…
We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a combination of quantum transport formalisms, giving access to bulk properties as well as multi-terminal device responses, the presence of a non-uniform local bandgap is shown to give rise to valley-dependent scattering and a finite Fermi surface contribution to the valley Hall conductivity, related to characteristics of $R_\mathrm{NL}$. These features are robust…
Graphene layers are known to stack in two stable configurations, namely ABA or ABC stacking, with drastically distinct electronic properties. Unlike the ABA stacking, little has been done to experimentally investigate the electronic properties of ABC graphene multilayers. Here, we report the first magneto optical study of a large ABC domain in a graphene multilayers flake, with ABC sequences exceeding 17 graphene sheets. The ABC-stacked multilayers can be fingerprinted with a characteristic electronic Raman scattering response, which persists even at room temperatures. Tracing the magnetic fie…
Since graphene has no band gap, photoluminescence is not expected from relaxed charge carriers. We have, however, observed significant light emission from graphene under excitation by ultrashort (30-fs) laser pulses. Light emission was found to occur across the visible spectral range (1.7 - 3.5 eV), with emitted photon energies exceeding that of the excitation laser (1.5 eV). The emission exhibits a nonlinear dependence on the laser fluence. In two-pulse correlation measurements of the time-domain response, a dominant relaxation time of tens of femtoseconds is observed. A two-temperature model…
Despite the now vast body of two-dimensional materials under study, bilayer graphene remains unique in two ways: it hosts a simultaneously tunable band gap and electron density; and stems from simple fabrication methods. These two advantages underscore why bilayer graphene is critical as a material for optoelectronic applications. In the work that follows, we calculate the one- and two-photon absorption coefficients for degenerate interband absorption in a graphene bilayer hosting an asymmetry gap and adjustable chemical potential--all at finite temperature. Our analysis is comprehensive, char…
Gapped graphene has been proposed to be a good platform to observe the valley Hall effect, a transport phenomenon involving the flow of electrons that are characterized by different valley indices. In the present work, we show that this phenomenon is better described as an instance of the orbital Hall effect, where the ambiguous "valley" indices are replaced by a physical quantity, the orbital magnetic moment, which can be defined uniformly over the entire Brillouin zone. This description removes the arbitrariness in the choice of arbitrary cut-off for the valley-restricted integrals in the va…
Layers of twisted bilayer graphene exhibit varieties of exotic quantum phenomena1-5. Today, the twist angle Θ has become an important degree of freedom for exploring novel states of matters, i.e. two-dimensional superconductivity ( Θ = 1.1°)6, 7 and a two-dimensional quasicrystal (Θ = 30°)8, 9. We report herein experimental observation on the photo-induced ultrafast dynamics of Dirac fermions in the quasicrystalline 30° twisted bilayer graphene (QCTBG). We discover that hot carriers are asymmetrically distributed between the two graphene layers, followed by the opposing femtosecond relaxations…
For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of photogenerated charge carriers has been verified in graphene. Here, we show that dual-gated graphene junctions can be functional parts of THz-circuits. As the underlying optoelectronic process, we expl…
The instanton approach to the in-gap fluctuation states is applied to the spectrum of biased bilayer graphene. It is shown that the density of states falls off with energy measured from the band-edge as $ν(ε)\propto \exp(-|ε/ε_t|^{3/2})$, where the characteristic tail energy, $ε_t$, scales with the concentration of impurities, $n_i$, as $n_i^{2/3}$. While the bare energy spectrum is characterized by two energies: the bias-induced gap, $V$, and interlayer tunneling, $t_{\perp}$, the tail, $ε_t$, contains a {\it single} combination $V^{1/3}t_{\perp}^{2/3}$. We show that the above expression for …
Topological domain walls in dual-gated gapped bilayer graphene host edge states that are gate- tunable and valley polarized. Here we predict that plasmonic collective modes can propagate along these topological domain walls even at zero bulk density, and possess a markedly different character from that of bulk plasmons. Strikingly, domain wall plasmons are extremely long-lived, with plasmon lifetimes that can be orders of magnitude larger than the transport scattering time in the bulk. While most pronounced at low temperatures, long domain wall plasmon lifetimes persist even at room temperatur…
