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arXiv 0804.0984cond-mat.mes-hall

Electronic Structure in Gapped Graphene with Coulomb Potential

W. Zhu, M. L. Liang, Q. W. Shi, Z. F. Wang, J. Chen, J. G. Hou

英文摘要:

In this paper, we numerically study the bound electron states induced by long range Coulomb impurity in gapped graphene and the quasi-bound states in supercritical region based on the lattice model. We present a detailed comparison between our numerical simulations and the prediction of the continuum model which is described by the Dirac equation in (2+1)-dimensional Quantum Electrodynamics (QED). We also use the Fano's formalism to investigate the quasi-bound state development and design an accessible experiments to test the decay of the supercritical vacuum in the gapped graphene.

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