For gapped graphene, we predict that an intense ultrashort (single-oscillation) circularly-polarized optical pulse can induce a large population of the conduction band and a large valley polarization. With an increase in the bandgap, the magnitude of the valley polarization gradually increases from zero (for the native gapless graphene) to a value on the order of unity. The energy bandwidth of the electrons excited into the conduction band can be very large ($\gtrsim 10$ eV for a reasonable pulse amplitude of $\sim 0.5$ $\mathrm{V/Å}$). These phenomena are due to the effect of topological resonance: the matching of the topological (geometric) phase and the dynamic phase. Gapped graphene with tunable bandgap can be used as a convenient generic model of two-dimensional semiconductors with honeycomb generic lattice structures and broken inversion symmetry, such as transition metal dichalcogenides.
We propose a scheme to trap and filter electrons, valley dependently, on a scale beyond the diffraction limit, in a gapped Dirac system using a circularly polarized light beam and a microscale metallic resonator. The main mechanism allowing the selection is the valley dependent break of the time reversal symmetry. Indeed in one valley, the light partially closes the already existing gap while it opens it in the other one. This difference in the band structure close to the Dirac points, induces a change in the dynamics of the electrons, leading to a valley router behaviour of the system.
Gapped 2D Dirac materials, in which inversion symmetry is broken by a gap-opening perturbation, feature a unique valley transport regime. The system ground state hosts dissipationless persistent valley currents existing even when topologically protected edge modes are absent or when they are localized due to edge roughness. Topological valley currents in such materials are dominated by bulk currents produced by electronic states just beneath the gap rather than by edge modes. Dissipationless currents induced by an external bias are characterized by a quantized half-integer valley Hall conducti…
Recent experiments have revealed that novel nonequilibrium states consistent with the hydrodynamic description of electrons are realized in ultrapure graphene, which hosts the valley degrees of freedom. Here, we formulate a theory of electron hydrodynamics including dissipation processes of the valley angular momentum by employing the concept of micropolar fluids. As a result, our theory proposes a novel strategy to generate a valley polarization by the microrotation. We uncover that the rotational viscosity induces longitudinal valley currents which are second order in electric fields.
Bilayer Heisenberg ferromagnetic insulators hold degenerate terahertz Dirac magnon modes associated with two opposite valleys of the hexagonal Brillouin zone. We show that this energy degeneracy can be removed by breaking of the inversion symmetry (I), leading to a topological magnon valley current. We show furthermore that this current leads to valley Seebeck effect for magnons and is thereby detectable. We perform calculations in the specific example of bilayer CrBr3, where I can be broken by electrostatic doping.
We investigate the Goos-Hänchen shift for ballistic electrons (i) reflected from a step-like inhomogeneity of the potential energy and (or) effective mass, and (ii) transmitted through a ferromagnetic barrier region in monolayer silicene or gapped graphene. For the electrons reflected from a single interface we found that the Goos-Hänchen shift is valley-polarized for gapped graphene structure, and valley- and spin-polarized for silicene due to the spin-valley coupling. Incontrast, for example, to gapless graphene the lateral beam shift in gapped structures occurs not only in the case of total…
Gapped graphene has been proposed to be a good platform to observe the valley Hall effect, a transport phenomenon involving the flow of electrons that are characterized by different valley indices. In the present work, we show that this phenomenon is better described as an instance of the orbital Hall effect, where the ambiguous "valley" indices are replaced by a physical quantity, the orbital magnetic moment, which can be defined uniformly over the entire Brillouin zone. This description removes the arbitrariness in the choice of arbitrary cut-off for the valley-restricted integrals in the va…
We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a combination of quantum transport formalisms, giving access to bulk properties as well as multi-terminal device responses, the presence of a non-uniform local bandgap is shown to give rise to valley-dependent scattering and a finite Fermi surface contribution to the valley Hall conductivity, related to characteristics of $R_\mathrm{NL}$. These features are robust…
We present a low-energy effective-mass theory to describe chiral orbital current and anomalous magnetic moment in graphenes with band gap and related materials. We show that a Bloch electron generally contains an anomalous current density due to inter-band matrix elements, which describes a chiral current circulation associated with magnetic moment. In gapped graphenes, the chiral current is opposite between different valleys, and corresponding magnetic moment accounts for valley splitting of Landau levels. In gapped bilayer graphene, in particular, the valley-dependent magnetic moment is resp…
We study a gapped graphene monolayer in a combination of uniform magnetic field and strain-induced uniform pseudomagnetic field. The presence of two fields completely removes the valley degeneracy. The resulting density of states shows a complicated behaviour that can be tuned by adjusting the strength of the fields. We analyze how these features can be observed in the sublattice, valley and full density of states. The analytical expression for the valley DOS is derived.
Quantum manipulation of valleys in bilayer graphene is investigated. We establish an effective Schrodinger model, and identify two key mechanisms for valley manipulation - band structure warping and generalized valley-orbit interaction. Specifically, we implement valley qubits / FETs in bilayer graphene, as prospective quantum devices to build valley-based quantum / classical information processing.
Graphene's outstanding mechanical properties lend to strain engineering, allowing for future valleytronics and nanoelectromechanic applications. In this work, we have found that a Gaussian-shaped strain on a graphene p-n junction results in quantum Hall conductance oscillations due to the rotated angle between valley isospins at the graphene armchair edges. Furthermore, additional Fano resonances were observed as the value of the strain-induced pseudo-magnetic field approaches that of the external magnetic field. The lifted valley degeneracy, stemming from the interplay between the real and ps…
Valley Hall Viscosity in Gapped Graphene with and without a Magnetic Field
Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences（中国科学院大学 Kavli理论科学研究所）；Center for Spintronics Research Network, Keio University（庆应义塾大学自旋电子学研究网络中心）；Department of Physics, Nagoya University（名古屋大学物理学系）；Department of Physics, Kyoto University（京都大学物理学系）；Institute of Solid State Physics, University of Tokyo（东京大学固体物理研究所）；CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences（中国科学院大学 中科院拓扑量子计算卓越创新中心）；RIKEN Center for Emergent Matter Science (CEMS)（理化学研究所 新兴物质科学中心）；Advanced Science Research Center, Japan Atomic Energy Agency（日本原子力研究机构 先进科学研究中心）
The theoretical results are presented showing that strain-induced anisotropy of graphene spectrum gives rise to the valley currents under the illumination by normally incident light. The currents of the two graphene valleys are mutually compensated providing zero net electric current. The magnitude and direction of the valley currents are determined by the parameters of strain and light polarization. For not too high photon energy strain-induced valley current exceed that due to intrinsic warping of the graphene spectrum which suggests feasibility of strain-mediated valleytronics.
In this work, we provide a detailed derivation of Foldy-Wouthuysen (FW) transformation for two-dimensional (2D) gapped Dirac fermions under external fields and apply the formalism to study valley excitons in 2D semiconducting materials. Similar to relativistic quantum few-body problem, the gapped Dirac equation can be transformed into a Schrödinger equation with "relativistic" correction terms. In this 2D materials system, the correction terms can be interpreted as the Berry-curvature effect. The Hamiltonian for a valley exciton in external fields can be written based on the FW transformed Dir…
We report our theoretical calculations on the temperature and energy dependent electrical conductivity of gapped graphene within the framework of Boltzmann transport formalism. Since screening effects have known to be of vital importance in explaining the conductivity of gapless graphene therefore we first worked out the behaviour of the temperature dependent polarization function for gapped graphene as a function of wave vector and band gap, respectively. Polarization of gapped graphene has been compared with that of gapless graphene, bilayer graphene and 2DEG to see the effects of gap. It is…
Probing and controlling the valley degree of freedom in graphene systems by transport measurements has been a major challenge to fully exploit the unique properties of this two-dimensional material. In this theoretical work, we show that this goal can be achieved by a quantum-wire geometry made of gapped graphene that acts as a valley filter with the following favorable features: i) all electrical gate control, ii) electrically switchable valley polarity, iii) robustness against configuration fluctuation, and iv) potential for room temperature operation. This valley filtering is accomplished b…
An analogue of the Datta-Das spin FET is investigated, which is all-graphene and based on the valley degree of freedom of electrons / holes. The "valley FET" envisioned consists of a quantum wire of gapped graphene (channel) sandwiched between two armchair graphene nanoribbons (source and drain), with the following correspondence to the spin FET: valley (K and K') \leftrightarrow spin (up and down), armchair graphene nanoribbons \leftrightarrow ferromagnetic electrodes, graphene quantum wire \leftrightarrow semiconductor quantum wire, valley-orbit interaction \leftrightarrow Rashba spin-orbit …
In addition to electron charge and spin, novel materials host another degree of freedom, the valley. For a junction composed of valley filter sandwiched by two normal terminals, we focus on the valley efficiency under disorder with two valley filter models based on monolayer and bilayer graphene. Applying the transfer matrix method, valley resolved transmission coefficients are obtained. We find that: i) under weak disorder, when the line defect length is over about $15\rm nm$, it functions as a perfect channel (quantized conductance) and valley filter (totally polarized); ii) in the diffusive…
With its two degenerate valleys at the Fermi level, the band structure of graphene provides the opportunity to develop unconventional electronic applications. Herein, we show that electron and hole quasiparticles in graphene can be filtered according to which valley they occupy without the need to introduce confinement. The proposed valley filter is based on scattering off a recently observed line defect in graphene. Quantum transport calculations show that the line defect is semitransparent and that quasiparticles arriving at the line defect with a high angle of incidence are transmitted with…
It is known that the lowest propagating mode in a narrow ballistic ribbon of graphene may lack the twofold valley degeneracy of higher modes. Depending on the crystallographic orientation of the ribbon axis, the lowest mode mixes both valleys or lies predominantly in a single valley (chosen by the direction of propagation). We show, using a tight-binding model calculation, that a nonequilibrium valley polarization can be realized in a sheet of graphene, upon injection of current through a ballistic point contact with zigzag edges. The polarity can be inverted by local application of a gate vol…
In graphene, the valleys represent spin-like quantities and can act as a physical resource in valley-based electronics to novel quantum computation schemes. Here we demonstrate a direct route to tune and read the valley quantum states of disordered graphene by measuring the mesoscopic conductance fluctuations. We show that the conductance fluctuations in graphene at low temperatures are reduced by a factor of four when valley triplet states are gapped in the presence of short range potential scatterers at high carrier densities. We also show that this implies a gate tunable universal symmetry …
In this work we investigate the effects of a Fermi velocity modulation in a valley filter in graphene created by a combination of a magnetic and electric barrier. With the effective Dirac equation of the system, we use the transfer matrix formalism to obtain the transmittance. We verify that the valley transport in graphene is very sensitive to a Fermi velocity modulation, which is able to choose which valley will be filtered with perfect filtering. Also, it is possible to use a Fermi velocity modulation to filter both valleys or to make the valley filter transparent. It reveals that the Fermi…
Achieving a population imbalance between the two inequivalent valleys is a critical first step for any valleytronic device. A valley-polarization can be induced in biased bilayer graphene using circularly polarized light. In this paper, we present a detailed theoretical study of valley-polarization in biased bilayer graphene. We show that a nearly perfect valley-polarization can be achieved with the proper choices of external bias and pulse frequency. We find that the optimal pulse frequency $ω$ is given by $\hbarω=2a,$ where $2a$ is the potential energy difference between the graphene layers.…
The generation of valley current is a fundamental goal in graphene valleytronics but no practical ways of its realization are known yet. We propose a workable scheme for the generation of bulk valley current in a graphene mechanical resonator through adiabatic cyclic deformations of the strains and chemical potential in the suspended region. The accompanied strain gauge fields can break the spatial mirror symmetry of the problem within each of the two inequivalent valleys, leading to a fnite valley current due to quantum pumping. An all-electrical measurement configuration is designed to detec…
Dirac electrons in graphene have a valley degree of freedom that is being explored as a carrier of information. In that context of "valleytronics" one seeks to coherently manipulate the valley index. Here we show that reflection from a superlattice potential can provide a valley switch: Electrons approaching a pristine-graphene--superlattice-graphene interface near normal incidence are reflected in the opposite valley. We identify the topological origin of this valley switch, by mapping the problem onto that of Andreev reflection from a topological superconductor, with the electron-hole degree…
In this study we report our numerical results on finite temperature non-interacting dynamical polarization function, plasmon modes and electron energy loss function of doped single layer gapped graphene within the random phase approximation. We find that the interplay of linear energy band dispersion, chirality, bandgap and temperature endow single layer gapped graphene with strange polarizability behaviour which is a mixture of 2DEG, single layer and bilayer graphene and as a result the plasmon spectrum also manifests strikingly peculiar behaviour. The plasmon dispersion is observed to be sup…
The second-order nonlinear optical susceptibility $Π^{(2)}$ for second harmonic generation is calculated for gapped graphene. The linear and second-order nonlinear plasmon excitations are investigated in context of second harmonic generation (SHG). We report a red shift and an order of magnitude enhancement of the SHG resonance with growing gap, or alternatively, reduced electro-chemical potential.
We study transport in twisted bilayer graphene and show that electrostatic barriers can act as valley splitters, where electrons from the $K$ ($K'$) valley are transmitted only to e.g.\ the top (bottom) layer, leading to valley-layer locked currents. We show that such a valley splitter is obtained when the barrier varies slowly on the moiré scale and induces a Lifshitz transition across the junction, i.e.\ a change in the Fermi surface topology. Furthermore, we show that for a given valley the reflected and transmitted current are transversely deflected, as time-reversal symmetry is effectivel…
Berry curvature is analogous to magnetic field but in momentum space and is commonly present in materials with non-trivial quantum geometry. It endows Bloch electrons with transverse anomalous velocities to produce Hall-like currents even in the absence of a magnetic field. We report the direct observation of in situ tunable valley-selective Hall effect (VSHE), where inversion symmetry, and thus the geometric phase of electrons, is controllable by an out-of-plane electric field. We use high-quality bilayer graphene with an intrinsic and tunable bandgap, illuminated by circularly polarized mid-…
We study the non-equilibrium dynamics in a mesoscopic graphene ring excited by picoseconds shaped electromagnetic pulses. We predict an ultrafast buildup of charge polarization, currents and orbital magnetization. Applying the light pulses identified here, non-equilibrium valley currents are generated in a graphene ring threaded by a stationary magnetic flux. We predict a finite graphene ring magnetization even for a vanishing charge current; the magnetization emerges due to the light-induced difference of the valley populations.
We theoretically investigate the effects of strain-induced pseudomagnetic fields on the transmission probability and the ballistic conductance for Dirac fermion transport in suspended graphene. We show that resonant tunneling through double magnetic barriers can be tuned by strain in the suspended region. The valley-resolved transmission peaks are apparently distinguishable owing to the sharpness of the resonant tunneling. With the specific strain, the resonant tunneling is completely suppressed for Dirac fermions occupying the one valley, but the resonant tunneling exists for the other valley…
The generation of a fully valley-polarized current (FVPC) in bulk graphene is a fundamental goal in valleytronics. To this end, we investigate valley-dependent transport through a strained graphene modulated by a finite magnetic superlattice. It is found that this device allows a coexistence of insulating transmission gap of one valley and metallic resonant band of the other. Accordingly, a substantial bulk FVPC appears in a wide range of edge orientation and temperature, which can be effectively tuned by structural parameters. A valley-resolved Hall configuration is designed to measure the va…
A pseudo-magnetic field kink can be realized along a graphene nanoribbon using strain engineering. Electron transport along this kink is governed by snake states that are characterized by a single propagation direction. Those pseudo-magnetic fields point towards opposite directions in the K and K' valleys, leading to valley polarized snake states. In a graphene nanoribbon with armchair edges this effect results in a valley filter that is based only on strain engineering. We discuss how to maximize this valley filtering by adjusting the parameters that define the stress distribution along the g…
We demonstrate theoretically how local strains in graphene can be tailored to generate a valley polarized current. By suitable engineering of local strain profiles, we find that electrons in opposite valleys (K or K') show different Brewster-like angles and Goos-Hänchen shifts, exhibiting a close analogy with light propagating behavior. In a strain-induced waveguide, electrons in K and K' valleys have different group velocities, which can be used to construct a valley filter in graphene without the need for any external fields.
We propose a directional switching effect in a metallic device. To such end we exploit a graphene-based device with a three-terminal geometry in the presence of a magnetic field. We show that unidirectional charge and valley currents can be controlled by the Fermi energy and the magnetic field direction in the active device. Interestingly, unidirectional transport of charge and valley is generated between two-terminals at the same bias voltage. Furthermore, we quantify the valley depolarization as a function of disorder concentration. Our results open a way for active graphene-based valleytron…
We use a self-consistent Hartree-Fock approximation with realistic Coulomb interactions for $π$-band electrons to explore the possibility of broken symmetry states in weakly disordered ABC stacked trilayer graphene. The competition between gapped and gapless broken symmetry states, and normal states is studied by comparing total energies. We find that gapped states are favored and that, unlike the bilayer case, gapless nematic broken symmetry states are not metastable. Among the gapped states the layer antiferromagnetic state is favored over anomalous and spin Hall states.
We study theoretically the interaction of ultrashort optical pulses with gapped graphene. Such strong pulse results in finite conduction band population and corresponding electric current both during and after the pulse. Since gapped graphene has broken inversion symmetry, it has an axial symmetry about the $y$-axis but not about the $x$-axis. We show that, in this case, if the linear pulse is polarized along the $x$-axis, the rectified electric current is generated in the $y$ direction. At the same time, the conduction band population distribution in the reciprocal space is symmetric about th…
Intrinsic and extrinsic valley Hall effects are predicted to emerge in graphene systems with uniform or spatially-varying mass terms. Extrinsic mechanisms, mediated by the valley-dependent scattering of electrons at the Fermi surface, can be directly linked to quantum transport simulations. This is a promising route towards more complete experimental investigation of valleytronic phenomena in graphene, but a major obstacle is the difficulty in applying the sublattice-dependent potentials required. Here we show that strongly valley-dependent scattering also emerges from bilayer graphene quantum…
We numerically investigate the electronic transport properties of graphene nanoribbons and carbon nanotubes with inter-valley coupling, e.g., in \sqrt{3}N \times \sqrt{3}N and 3N \times 3N superlattices. By taking the \sqrt{3} \times \sqrt{3} graphene superlattice as an example, we show that tailoring the bulk graphene superlattice results in rich structural configurations of nanoribbons and nanotubes. After studying the electronic characteristics of the corresponding armchair and zigzag nanoribbon geometries, we find that the linear bands of carbon nanotubes can lead to the Klein tunnelling-l…
Using the Büttiker-Landauer formulation of transport theory in the linear response regime, the valley currents and non-local resistances of bilayer graphene nanostructures with broken inversion symmetry are calculated. It is shown that broken inversion symmetry in bilayer graphene nanostructures leads to striking enhancement of the non-local 4-terminal resistance and to valley currents several times stronger than the conventional electric current when the Fermi energy is in the spectral gap close to the energy of Dirac point. The scaling relation between local and non-local resistances is inve…
We study the states localized near an interface between conducting and insulating bilayer graphene (BLG) and show that they have highly unusual properties that have no analog in conventional systems. Moreover, the states belonging to the two independent valleys in the Brillouin zone of BLG show contrasting properties that allows a relatively easier experimental realization of various valley based functionalities desired in valleytronics without requiring any sophisticated techniques.
We show how the trigonal warping effect in doped graphene can be used to produce fully valley polarized currents. We propose a device that acts both as a beam splitter and a collimator of these electronic currents. The result is demonstrated trough an optical analogy using two dimensional photonic crystals.
Graphene electrons feature a pair of massless Dirac cones of opposite pseudospin chirality at two valleys. Klein tunneling refers to the intriguing capability of these chiral electrons to penetrate through high and wide potential barrier. The two valleys have been treated independently in the literature, where time reversal symmetry dictates that neither the normal incidence transmission nor the angle-averaged one can have any valley polarization. Here we show that, when intervalley scattering by barrier is accounted, graphene electrons normally incident at a superlattice barrier can experienc…
We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling barrier width for electrons on different graphene layers of bilayer graphene, coupled with the fact that its Landau level wave functions are not equally distributed amongst the layers with a distribution that is reversed between the two valleys, lead to valley polarisation of the tunnelling current. We estimate that valley polarisation $\sim 70\%$ can be achieve…
The low energy band structure of graphene has two inequivalent valleys at K and K' points of the Brillouin zone. The possibility to manipulate this valley degree of freedom defines the field of valleytronics, the valley analogue of spintronics. A key requirement for valleytronic devices is the ability to break the valley degeneracy by filtering and spatially splitting valleys to generate valley polarized currents. Here we suggest a way to obtain valley polarization using strain-induced inhomogeneous pseudomagnetic fields (PMF) which act differently on the two valleys. Notably, the suggested me…
Quantum spin Hall effect was first predicted in graphene. However, the weak spin orbit interaction in graphene meant that the search for quantum spin Hall effect in graphene never fructified. In this work we show how to generate the quantum spin-valley Hall effect in graphene via quantum pumping by adiabatically modulating a magnetic impurity and an electrostatic potential in a monolayer of strained graphene. We see that not only exclusive spin polarized currents can be pumped in the two valleys in exactly opposite directions but one can have pure spin currents flowing in opposite directions i…
We report on the possibility of valley number fractionalization in graphene with a topological defect that is accounted for in Dirac equation by a pseudomagnetic field. The valley number fractionalization is attributable to an imbalance on the number of one particle states in one of the two Dirac points with respect to the other and it is related to the flux of the pseudomagnetic field. We also discuss the analog effect the topological defect might lead in the induced spin polarization of the charge carriers in graphene.
We show that the recently discovered double-valley splitting of the low-lying Landau level(s) in the Quantum Hall Effect in graphene can be explained as perturbative orbital interaction of intra- and inter-valley microscopic orbital currents with a magnetic field. This effect is provided by the translational-non-invariant terms corresponding to graphene's crystallographic honeycomb symmetry but do not exist in the relativistic theory of massless Dirac Fermions in Quantum Electrodynamics. We discuss recent data in view of these results.
Valley filtering processes have been explored in different graphene-based configurations and scenarios to control transport responses. Here we propose graphene multi-terminal set-ups properly designed to obtain valley filtered currents in a broad range of energy, besides the possibility of controlling their directions. We explore graphene systems with extended mechanical fold-like deformations as an opportunity to enhance valley filtered transmission. The mixing between the electronic confinement effects due to a magnetic field and strain results in a selective drive of the current components …
We theoretically investigate gate-defined graphene superlattices with broken inversion symmetry as a platform for realizing tunable valley dependent transport. Our analysis is motivated by recent experiments [C. Forsythe et al., Nat. Nanotechnol. 13, 566 (2018)] wherein gate-tunable superlattice potentials have been induced on graphene by nanostructuring a dielectric in the graphene/patterneddielectric/gate structure. We demonstrate how the electronic tight-binding structure of the superlattice system resembles a gapped Dirac model with associated valley dependent transport using an unfolding …
We propose a device in which a sheet of graphene is coupled to a Weyl semimetal, allowing for the physical access to the study of tunneling from two-dimensional to three dimensional massless Dirac fermions. Due to the reconstructed band structure, we find that this device acts as a robust valley filter for electrons in the graphene sheet. We show that, by appropriate alignment, the Weyl semimetal draws away current in one of the two graphene valleys while allowing current in the other to pass unimpeded. In contrast to other proposed valley filters, the mechanism of our proposed device occurs i…
Spin, anomalous, and valley Hall effects in graphene-based hybrid structures are studied theoretically within the Green function formalism and linear response theory. Two different types of hybrid systems are considered in detail: (i) graphene/boron nitride/cobalt(nickel), and (ii) graphene/YIG. The main interest is focused on the proximity-induced exchange interaction between graphene and magnetic substrate and on the proximity-enhanced spin-orbit coupling. The proximity effects are shown to have a significant influence on the electronic and spin transport properties of graphene. To find the …
In this paper, we numerically study the bound electron states induced by long range Coulomb impurity in gapped graphene and the quasi-bound states in supercritical region based on the lattice model. We present a detailed comparison between our numerical simulations and the prediction of the continuum model which is described by the Dirac equation in (2+1)-dimensional Quantum Electrodynamics (QED). We also use the Fano's formalism to investigate the quasi-bound state development and design an accessible experiments to test the decay of the supercritical vacuum in the gapped graphene.
Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state systems, while exploitation of the valley has only recently been started, yet without control on the single electron level. Here, we show that van-der Waals stacking of graphene onto hexagonal boron nitride offers a natural platform for valley control. We use a graphene quantum dot induced by the tip of a scanning tunneling microscope and demonstrate valley splitt…
