Recent experiments have revealed that novel nonequilibrium states consistent with the hydrodynamic description of electrons are realized in ultrapure graphene, which hosts the valley degrees of freedom. Here, we formulate a theory of electron hydrodynamics including dissipation processes of the valley angular momentum by employing the concept of micropolar fluids. As a result, our theory proposes a novel strategy to generate a valley polarization by the microrotation. We uncover that the rotational viscosity induces longitudinal valley currents which are second order in electric fields.
We propose a scheme to trap and filter electrons, valley dependently, on a scale beyond the diffraction limit, in a gapped Dirac system using a circularly polarized light beam and a microscale metallic resonator. The main mechanism allowing the selection is the valley dependent break of the time reversal symmetry. Indeed in one valley, the light partially closes the already existing gap while it opens it in the other one. This difference in the band structure close to the Dirac points, induces a change in the dynamics of the electrons, leading to a valley router behaviour of the system.
Gapped 2D Dirac materials, in which inversion symmetry is broken by a gap-opening perturbation, feature a unique valley transport regime. The system ground state hosts dissipationless persistent valley currents existing even when topologically protected edge modes are absent or when they are localized due to edge roughness. Topological valley currents in such materials are dominated by bulk currents produced by electronic states just beneath the gap rather than by edge modes. Dissipationless currents induced by an external bias are characterized by a quantized half-integer valley Hall conducti…
Bilayer Heisenberg ferromagnetic insulators hold degenerate terahertz Dirac magnon modes associated with two opposite valleys of the hexagonal Brillouin zone. We show that this energy degeneracy can be removed by breaking of the inversion symmetry (I), leading to a topological magnon valley current. We show furthermore that this current leads to valley Seebeck effect for magnons and is thereby detectable. We perform calculations in the specific example of bilayer CrBr3, where I can be broken by electrostatic doping.
We investigate the Goos-Hänchen shift for ballistic electrons (i) reflected from a step-like inhomogeneity of the potential energy and (or) effective mass, and (ii) transmitted through a ferromagnetic barrier region in monolayer silicene or gapped graphene. For the electrons reflected from a single interface we found that the Goos-Hänchen shift is valley-polarized for gapped graphene structure, and valley- and spin-polarized for silicene due to the spin-valley coupling. Incontrast, for example, to gapless graphene the lateral beam shift in gapped structures occurs not only in the case of total…
Gapped graphene has been proposed to be a good platform to observe the valley Hall effect, a transport phenomenon involving the flow of electrons that are characterized by different valley indices. In the present work, we show that this phenomenon is better described as an instance of the orbital Hall effect, where the ambiguous "valley" indices are replaced by a physical quantity, the orbital magnetic moment, which can be defined uniformly over the entire Brillouin zone. This description removes the arbitrariness in the choice of arbitrary cut-off for the valley-restricted integrals in the va…
For gapped graphene, we predict that an intense ultrashort (single-oscillation) circularly-polarized optical pulse can induce a large population of the conduction band and a large valley polarization. With an increase in the bandgap, the magnitude of the valley polarization gradually increases from zero (for the native gapless graphene) to a value on the order of unity. The energy bandwidth of the electrons excited into the conduction band can be very large ($\gtrsim 10$ eV for a reasonable pulse amplitude of $\sim 0.5$ $\mathrm{V/Å}$). These phenomena are due to the effect of topological reso…
We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a combination of quantum transport formalisms, giving access to bulk properties as well as multi-terminal device responses, the presence of a non-uniform local bandgap is shown to give rise to valley-dependent scattering and a finite Fermi surface contribution to the valley Hall conductivity, related to characteristics of $R_\mathrm{NL}$. These features are robust…
We present a low-energy effective-mass theory to describe chiral orbital current and anomalous magnetic moment in graphenes with band gap and related materials. We show that a Bloch electron generally contains an anomalous current density due to inter-band matrix elements, which describes a chiral current circulation associated with magnetic moment. In gapped graphenes, the chiral current is opposite between different valleys, and corresponding magnetic moment accounts for valley splitting of Landau levels. In gapped bilayer graphene, in particular, the valley-dependent magnetic moment is resp…
We study a gapped graphene monolayer in a combination of uniform magnetic field and strain-induced uniform pseudomagnetic field. The presence of two fields completely removes the valley degeneracy. The resulting density of states shows a complicated behaviour that can be tuned by adjusting the strength of the fields. We analyze how these features can be observed in the sublattice, valley and full density of states. The analytical expression for the valley DOS is derived.
Valley Hall Viscosity in Gapped Graphene with and without a Magnetic Field
Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences（中国科学院大学 Kavli理论科学研究所）；Center for Spintronics Research Network, Keio University（庆应义塾大学自旋电子学研究网络中心）；Department of Physics, Nagoya University（名古屋大学物理学系）；Department of Physics, Kyoto University（京都大学物理学系）；Institute of Solid State Physics, University of Tokyo（东京大学固体物理研究所）；CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences（中国科学院大学 中科院拓扑量子计算卓越创新中心）；RIKEN Center for Emergent Matter Science (CEMS)（理化学研究所 新兴物质科学中心）；Advanced Science Research Center, Japan Atomic Energy Agency（日本原子力研究机构 先进科学研究中心）
In this work, we provide a detailed derivation of Foldy-Wouthuysen (FW) transformation for two-dimensional (2D) gapped Dirac fermions under external fields and apply the formalism to study valley excitons in 2D semiconducting materials. Similar to relativistic quantum few-body problem, the gapped Dirac equation can be transformed into a Schrödinger equation with "relativistic" correction terms. In this 2D materials system, the correction terms can be interpreted as the Berry-curvature effect. The Hamiltonian for a valley exciton in external fields can be written based on the FW transformed Dir…
Berry curvature is analogous to magnetic field but in momentum space and is commonly present in materials with non-trivial quantum geometry. It endows Bloch electrons with transverse anomalous velocities to produce Hall-like currents even in the absence of a magnetic field. We report the direct observation of in situ tunable valley-selective Hall effect (VSHE), where inversion symmetry, and thus the geometric phase of electrons, is controllable by an out-of-plane electric field. We use high-quality bilayer graphene with an intrinsic and tunable bandgap, illuminated by circularly polarized mid-…
We calculate the Hall viscosity and the nonlocal (i.e., dependent on wave vector $\bm q$) Hall conductivity of "gapped graphene" (a non-topological insulator with two valleys) in the presence of a strong perpendicular magnetic field. Using the linear-response theory at zero temperature within the Dirac approximation for the Landau levels, we present analytical expressions for both valley and total Hall viscosity and conductivity up to $\bm q^2$ at all frequencies. Although the final formulas for total Hall viscosity and conductivity are similar to the ones previously obtained for gapless graph…
The rise of graphene opens a new door to qubit implementation, as discussed in the recent proposal of valley pair qubits in double quantum dots of gapped graphene (Wu et al., arXiv: 1104.0443 [cond-mat.mes-hall]). The work here presents the comprehensive theory underlying the proposal. It discusses the interaction of electrons with external magnetic and electric fields in such structures. Specifically, it examines a strong, unique mechanism, i.e., the analogue of the 1st-order relativistic effect in gapped graphene. This mechanism is state mixing free and allows, together with the electrically…
We develop a microscopic theory of an unconventional photogalvanic effect in two-dimensional materials with the Dirac energy spectrum of the carriers of charge under strong driving. As a test bed, we consider a layer of a transition metal dichalcogenide, exposed to two different electromagnetic fields. The first pumping field is circularly-polarized, and its frequency exceeds the material bandgap. It creates an extremely nonequilibrium distribution of electrons and holes in one valley (K) and opens dynamical gaps, whereas the other valley (K') remains empty due to the valley-dependent interban…
We show that the spectrum of subbands in an electrostatically defined quantum wire in gapped bilayer graphene directly manifests the minivalley structure and reflects Berry curvature via the associated magnetic moment of the states in the low-energy bands of this two-dimensional material. We demonstrate how these appear in degeneracies of the low-energy minibands and their valley splitting, which develops linearly in a weak magnetic field. Consequently, magneto-conductance of a ballistic point contact connecting two non-gapped areas of a bilayer through a gapped (top and bottom gated) barrier …
We consider the anomalous thermoelectric transport in gapped single and bilayer graphene where the gap may be due to broken inversion symmetry. In the presence of the gap, non-trivial Berry phase effects can be shown to mediate a transverse thermoelectric voltage in response to an applied temperature gradient even in the absence of a perpendicular magnetic field. This spontaneous, anomalous Nernst effect is nonzero for non-uniform chemical potential in the two inequivalent valleys in the graphene band structure. Conversely, the Nernst response can be used to create a valley-index polarization …
The valley-contrasting orbital magnetic moment of Bloch electrons allows the lifting of valley degeneracy by an out-of-plane magnetic field. We demonstrate that this leads to negative magnetoresistance, utilizing a gapped two-dimensional multi-valley model as an example. An intuitive physical picture in terms of the increased carrier density from a magnetic gating effect is proposed for this negative magnetoresistance. In particular, giant negative magnetoresistance is achieved after one of the two valleys is depleted by the magnetic field. This new mechanism of negative magnetoresistance is a…
Topological domain walls in dual-gated gapped bilayer graphene host edge states that are gate- tunable and valley polarized. Here we predict that plasmonic collective modes can propagate along these topological domain walls even at zero bulk density, and possess a markedly different character from that of bulk plasmons. Strikingly, domain wall plasmons are extremely long-lived, with plasmon lifetimes that can be orders of magnitude larger than the transport scattering time in the bulk. While most pronounced at low temperatures, long domain wall plasmon lifetimes persist even at room temperatur…
Electronic states at domain walls in bilayer graphene are studied by analyzing their four and two band continuum models, by performing numerical calculations on the lattice, and by using quantum geometric arguments. The continuum theories explain the distinct electronic properties of boundary modes localized near domain walls formed by interlayer electric field reversal, by interlayer stacking reversal, and by simultaneous reversal of both quantities. Boundary mode properties are related to topological transitions and gap closures which occur in the bulk Hamiltonian parameter space. The import…
We propose a device for the generation of valley polarized electronic current in bilayer graphene. By analyzing the response of this material to intense terahertz frequency light in the presence of a transverse electric field, we demonstrate that dynamical states are induced in the gapped energy region, and if the system parameters are properly tuned, these states exist only in one valley. The valley polarized states can then be used to filter an arbitrary electron current, so generating a valley polarized current.
In graphene, the valleys represent spin-like quantities and can act as a physical resource in valley-based electronics to novel quantum computation schemes. Here we demonstrate a direct route to tune and read the valley quantum states of disordered graphene by measuring the mesoscopic conductance fluctuations. We show that the conductance fluctuations in graphene at low temperatures are reduced by a factor of four when valley triplet states are gapped in the presence of short range potential scatterers at high carrier densities. We also show that this implies a gate tunable universal symmetry …
Probing and controlling the valley degree of freedom in graphene systems by transport measurements has been a major challenge to fully exploit the unique properties of this two-dimensional material. In this theoretical work, we show that this goal can be achieved by a quantum-wire geometry made of gapped graphene that acts as a valley filter with the following favorable features: i) all electrical gate control, ii) electrically switchable valley polarity, iii) robustness against configuration fluctuation, and iv) potential for room temperature operation. This valley filtering is accomplished b…
In the model of gapped graphene, we have shown how the recently predicted topological resonances are solely related to the presence of an energy band gap at the $K$ and $K^\prime$ points of the Brillouin zone. In the field of a strong single-oscillation chiral (circularly-polarized) optical pulse, the topological resonance causes the valley-selective population of the conduction band. This population distribution represents a chiral texture in the reciprocal space that is structured with respect to the pulse separatrix as has earlier been predicted for transition metal dichalcogenides. As the …
We theoretically investigate gate-defined graphene superlattices with broken inversion symmetry as a platform for realizing tunable valley dependent transport. Our analysis is motivated by recent experiments [C. Forsythe et al., Nat. Nanotechnol. 13, 566 (2018)] wherein gate-tunable superlattice potentials have been induced on graphene by nanostructuring a dielectric in the graphene/patterneddielectric/gate structure. We demonstrate how the electronic tight-binding structure of the superlattice system resembles a gapped Dirac model with associated valley dependent transport using an unfolding …
We study transport across p-n junctions of gapped two-dimensional semi-Dirac materials: nodal semimetals whose energy bands disperse quadratically and linearly along distinct crystal axes. The resulting electronic properties --- relevant to materials such as TiO$_2$/VO$_2$ multilayers and $α$-(BEDT-TTF)$_2$I$_3$ salts --- continuously interpolate between those of mono- and bi-layer graphene as a function of propagation angle. We demonstrate that tunneling across the junction depends on the orientation of the tunnel barrier relative to the crystalline axes, leading to strongly non-monotonic cur…
We present a microscopic theory for collective excitations of quantum anomalous Hall ferromagnets (QAHF) in twisted bilayer graphene. We calculate the spin magnon and valley magnon spectra by solving Bethe-Salpeter equations, and verify the stability of QAHF. We extract the spin stiffness from the gapless spin wave dispersion, and estimate the energy cost of a skyrmion-antiskyrmion pair, which is found to be comparable in energy with the Hartree-Fock gap. The valley wave mode is gapped, implying that the valley polarized state is more favorable compared to the valley coherent state. Using a no…
An analogue of the Datta-Das spin FET is investigated, which is all-graphene and based on the valley degree of freedom of electrons / holes. The "valley FET" envisioned consists of a quantum wire of gapped graphene (channel) sandwiched between two armchair graphene nanoribbons (source and drain), with the following correspondence to the spin FET: valley (K and K') \leftrightarrow spin (up and down), armchair graphene nanoribbons \leftrightarrow ferromagnetic electrodes, graphene quantum wire \leftrightarrow semiconductor quantum wire, valley-orbit interaction \leftrightarrow Rashba spin-orbit …
A system similar to gapped graphene (for example, fluorinated) containing two or more electron valleys is considered. It is assumed that the material has a sector cut and is deformed in the plane and the the cut edges are connected to form an adiabatically curved atomic net without extended defects. We neglect the deformation potential. In such a system, the local momentum of the valley center ${\bf K}$ acts as the vector potential of fictitious magnetic field. We found the electron states in such system in the case of orientation ${\bf K}$ along the azimuth of geometric space at any point. It…
The recent observation [R. V. Gorbachev et al., Science {\bf 346}, 448 (2014)] of nonlocal resistance $R_\mathrm{NL}$ near the Dirac point (DP) of multiterminal graphene on aligned hexagonal boron nitride (G/hBN) has been interpreted as the consequence of topological valley Hall currents carried by the Fermi sea states just beneath the bulk gap $E_g$ induced by the inversion symmetry breaking. However, the valley Hall conductivity $σ^v_{xy}$, quantized inside $E_g$, is not directly measurable. Conversely, the Landauer-Büttiker formula, as numerically exact approach to observable nonlocal trans…
Valley pseudospin, the quantum degree of freedom characterizing the degenerate valleys in energy bands, is a distinct feature of two-dimensional Dirac materials. Similar to spin, the valley pseudospin is spanned by a time reversal pair of states, though the two valley pseudospin states transform to each other under spatial inversion. The breaking of inversion symmetry induces various valley-contrasted physical properties; for instance, valley-dependent topological transport is of both scientific and technological interests. Bilayer graphene (BLG) is a unique system whose intrinsic inversion sy…
We consider the combined effect of a gap and a Zeeman interaction on the helical Dirac fermions which exist on the surface of a topological insulator. Magneto-optical properties, the magnetization, Hall effect and the density of states are considered with emphasis on the particle-hole asymmetry which arises when a subdominant Schrödinger piece is included along with the dominant Dirac part of the Hamiltonian. When appropriate, we compare our results with those of a single valley gapped graphene system for which Zeeman splitting behaves differently. We provide a derivation of the phase offset i…
We study the dynamics of semiclassical electrons in (gapped) graphene in two complementary limits, i.e. in the Klein tunneling and valley Hall effect regimes, by scattering wave packets off armchair step potentials and by exposing wave packets to a uniform electric field, respectively. Our numerical wave packet simulation goes beyond semiclassical analytical approximations and standard Klein tunneling treatments and allows to study intra- and intervalley scattering processes. We find distinct Klein tunneling characteristics for low and tall steps, which include unusual Berry curvature induced …
We propose a novel method for the generation of the transverse valley currents, which is based on the pure crossed Andreev reflection (pCAR) in the superconducting hybrid junctions composed of the gapped $α-\mathcal{T}_3$ lattices with ferromagnet-induced exchange interaction. The angle-resolved pCAR probability is asymmetric for a given valley, resulting in the transverse valley currents with zero net charge. This pCAR assisted charge-valley conversion is highly efficient with the valley Hall angle reaching an order of unity, suggesting potential applications for valleytronic devices.
In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers $n = 1, 2,\dots 50$ can be filled successively into the quantum system with charging energies exceeding $10 \ \mathrm{meV}$. For the lowest quantum states, we can clearly observe valley and Zeeman splittings with a spin g-factor of $g_{s}\approx 2$. In…
A theory of the valley and spin Hall effects and resulting accumulation of the valley and spin polarization is developed for ultraclean channels made of two-dimensional semiconductors where the electron mean free path due to the residual disorder or phonons exceeds the channel width. Both ballistic and hydrodynamic regimes of the electron transport are studied. The polarization accumulation is determined by interplay of the anomalous velocity, side-jump and skew scattering effects. In the hydrodynamic regime, where the electron-electron scattering is dominant, the valley and spin current gener…
Topologically protected gapless edge states are phases of quantum matter which behave as massless Dirac fermions, immunizing against disorders and continuous perturbations. Recently, a new class of topological insulators (TIs) with topological corner states have been theoretically predicted in electric systems, and experimentally realized in two-dimensional (2D) mechanical and electromagnetic systems, electrical circuits, optical and sonic crystals, and elastic phononic plates. Here, we demonstrate a pseudospin-valley-coupled phononic TI, which simultaneously exhibits gapped edge states and to…
Understanding how the electron spin is coupled to orbital degrees of freedom, such as a valley degree of freedom in solid-state systems is central to applications in spin-based electronics and quantum computation. Recent developments in the preparation of electrostatically-confined quantum dots in gapped bilayer graphene (BLG) enables to study the low-energy single-electron spectra in BLG quantum dots, which is crucial for potential spin and spin-valley qubit operations. Here, we present the observation of the spin-valley coupling in a bilayer graphene quantum dot in the single-electron regime…
We present a theoretical study of gap opening in the zeroth Landau level in gapped graphene as a result of pseudo-Zeeman interaction. The applied magnetic field couples with the valley pseudospin degree of freedom of the charge carriers leading to the pseudo-Zeeman interaction. To investigate its role in transport at the Charge Neutrality Point (CNP), we study the integer quantum Hall effect (QHE) in gapped graphene in an angular magnetic field in the presence of pseudo-Zeeman interaction. Analytical expressions are derived for the Hall conductivity using Kubo-Greenwood formula. We also determ…
Gapless bilayer graphene is susceptible to a variety of spontaneously gapped states. As predicted by theory and observed by experiment, the ground state is however topologically trivial, because a valley-independent gap is energetically favorable. Here, we show that under the application of interlayer electric field and circularly polarized light, one valley can be selected to exhibit the original interaction instability while the other is frozen out. Tuning this Floquet system stabilizes multiple competing topological ordered states, distinguishable by edge transport and circular dichroism. N…
We explore the potential application of graphene-based qubits in photonic quantum communications. In particular, the valley pair qubit in double quantum dots of gapped graphene is investigated as a quantum memory in the implementation of quantum repeaters. For the application envisioned here, our work extends the recent study of the qubit (Wu et al., arXiv: 1104.0443; Phys. Rev. B 84, 195463 (2011)) to the case where the qubit is placed in a normal magnetic field-free configuration. It develops, for the configuration, a method of qubit manipulation, based on a unique AC electric field-induced,…
Gapped bilayer graphene can support the presence of intragap states due to kink gate potentials applied to the graphene layers. Electrons in these states display valley-momentum locking, which makes them attractive for topological valleytronics. Here, we show that kink-antikink local potentials enable modulated scattering of topological currents. We find that the kink-antikink coupling leads to anomalous steps in the junction conductance. Further, when the constriction detaches from the propagating modes, forming a loop, the conductance reveals the system energy spectrum. Remarkably, these kin…
We study edge-states in graphene systems where a bulk energy gap is opened by inversion symmetry breaking. We find that the edge-bands dispersion can be controlled by potentials applied on the boundary with unit cell length scale. Under certain boundary potentials, gapless edge-states with valley-dependent velocity are found, exactly analogous to the spin-dependent gapless chiral edge-states in quantum spin Hall systems. The connection of the edge-states to bulk topological properties is revealed.
Graphene superlattices have recently been attracting growing interest as an emergent class of quantum metamaterials. In this paper, we report the observation of nonlocal transport in bilayer graphene (BLG) superlattices encapsulated between two hexagonal boron nitride (hBN) layers, which formed hBN/BLG/hBN moiré superlattices. We then employed these superlattices to detect a long-range charge-neutral valley current using an all-electrical method. The moiré superlattice with broken inversion symmetry leads to a hot spot with Berry curvature accumulating at the charge neutral point (CNP), and it…
Bilayer graphene bears an eight-fold degeneracy due to spin, valley and layer symmetry, allowing for a wealth of broken symmetry states induced by magnetic or electric fields, by strain, or even spontaneously by interaction. We study the electrical transport in clean current annealed suspended bilayer graphene. We find two kind of devices. In bilayers of type B1 the eight-fold zero-energy Landau level (LL) is partially lifted above a threshold field revealing an insulating nu=0 quantum Hall state at the charge neutrality point (CNP). In bilayers of type B2 the LL lifting is full and a gap appe…
The magnetic field dependence of energy levels in gapped single- and bilayer graphene quantum dots (QDs) defined by electrostatic gates is studied analytically in terms of the Dirac equation. Due to the absence of sharp edges in these types of QDs, the valley degree of freedom is a good quantum number. We show that its degeneracy is efficiently and controllably broken by a magnetic field applied perpendicular to the graphene plane. This opens up a feasible route to create well-defined and well controlled spin- and valley-qubits in graphene QDs. We also point out the similarities and difference…
In this letter, we examine the role of Coulomb interactions in the emergence of macroscopically ordered states in graphene supported on hexagonal boron nitride substrates. Due to incommensuration effects with the substrate, graphene can develop gapped low energy modes that spatially conform into a triangular superlattice of quantum rings. In the presence of these modes, we show that Coulomb interactions lead to spontaneous formation of chiral loop currents in bulk and to macroscopic spin-valley order at zero temperature. We show that this exotic state breaks time reversal symmetry and can be d…
Electron and hole Bloch states in gapped bilayer graphene exhibit topological orbital magnetic moments with opposite signs near the band edges, which allows for tunable valley-polarization in an out-of-plane magnetic field. This intrinsic property makes electron and hole quantum dots (QDs) in bilayer graphene interesting for valley and spin-valley qubits. Here we show measurements of the electron-hole crossover in a bilayer graphene QD, demonstrating the opposite sign of the orbital magnetic moments associated with the Berry curvature. Using three layers of metallic top gates, we independently…
A Zener diode is a paradigmatic device in semiconductor-based electronics that consists of a pn junction where an external electric field induces a switching behavior in the current-voltage characteristics. We study Zener tunneling in HgTe quantum wells and graphene multilayers. We find that the tunneling transition probability depends asymmetrically on the parallel momentum of the carriers to the barrier. In HgTe quantum wells the asymmetry is the opposite for each spin, whereas for graphene multilayers it is the opposite for each valley degree of freedom. In both cases, a spin/valley current…
