We propose a device for the generation of valley polarized electronic current in bilayer graphene. By analyzing the response of this material to intense terahertz frequency light in the presence of a transverse electric field, we demonstrate that dynamical states are induced in the gapped energy region, and if the system parameters are properly tuned, these states exist only in one valley. The valley polarized states can then be used to filter an arbitrary electron current, so generating a valley polarized current.
Quantum manipulation of valleys in bilayer graphene is investigated. We establish an effective Schrodinger model, and identify two key mechanisms for valley manipulation - band structure warping and generalized valley-orbit interaction. Specifically, we implement valley qubits / FETs in bilayer graphene, as prospective quantum devices to build valley-based quantum / classical information processing.
Bilayer Heisenberg ferromagnetic insulators hold degenerate terahertz Dirac magnon modes associated with two opposite valleys of the hexagonal Brillouin zone. We show that this energy degeneracy can be removed by breaking of the inversion symmetry (I), leading to a topological magnon valley current. We show furthermore that this current leads to valley Seebeck effect for magnons and is thereby detectable. We perform calculations in the specific example of bilayer CrBr3, where I can be broken by electrostatic doping.
We study transport in twisted bilayer graphene and show that electrostatic barriers can act as valley splitters, where electrons from the $K$ ($K'$) valley are transmitted only to e.g.\ the top (bottom) layer, leading to valley-layer locked currents. We show that such a valley splitter is obtained when the barrier varies slowly on the moiré scale and induces a Lifshitz transition across the junction, i.e.\ a change in the Fermi surface topology. Furthermore, we show that for a given valley the reflected and transmitted current are transversely deflected, as time-reversal symmetry is effectivel…
We study the states localized near an interface between conducting and insulating bilayer graphene (BLG) and show that they have highly unusual properties that have no analog in conventional systems. Moreover, the states belonging to the two independent valleys in the Brillouin zone of BLG show contrasting properties that allows a relatively easier experimental realization of various valley based functionalities desired in valleytronics without requiring any sophisticated techniques.
Achieving a population imbalance between the two inequivalent valleys is a critical first step for any valleytronic device. A valley-polarization can be induced in biased bilayer graphene using circularly polarized light. In this paper, we present a detailed theoretical study of valley-polarization in biased bilayer graphene. We show that a nearly perfect valley-polarization can be achieved with the proper choices of external bias and pulse frequency. We find that the optimal pulse frequency $ω$ is given by $\hbarω=2a,$ where $2a$ is the potential energy difference between the graphene layers.…
Using the Büttiker-Landauer formulation of transport theory in the linear response regime, the valley currents and non-local resistances of bilayer graphene nanostructures with broken inversion symmetry are calculated. It is shown that broken inversion symmetry in bilayer graphene nanostructures leads to striking enhancement of the non-local 4-terminal resistance and to valley currents several times stronger than the conventional electric current when the Fermi energy is in the spectral gap close to the energy of Dirac point. The scaling relation between local and non-local resistances is inve…
Intrinsic and extrinsic valley Hall effects are predicted to emerge in graphene systems with uniform or spatially-varying mass terms. Extrinsic mechanisms, mediated by the valley-dependent scattering of electrons at the Fermi surface, can be directly linked to quantum transport simulations. This is a promising route towards more complete experimental investigation of valleytronic phenomena in graphene, but a major obstacle is the difficulty in applying the sublattice-dependent potentials required. Here we show that strongly valley-dependent scattering also emerges from bilayer graphene quantum…
We describe an angularly asymmetric interface-scattering mechanism which allows to spatially separate the electrons in the two low-energy valleys of bilayer graphene. The effect occurs at electrostatically defined interfaces separating regions of different pseudospin polarization, and is associated with the helical winding of the pseudospin vector across the interface, which breaks the reflection symmetry in each valley. Electrons are transmitted with a preferred direction of up to 60 degree over a large energetic range in one of the valleys, and down to -60 degree in the other. In a Y-junctio…
The valley degree of freedom of electrons in solids has been proposed as a new type of information carriers beyond the electronic charge and spin. Recent experimental demonstrations of the optical orientation of the valley polarization and generation of the valley current through the valley Hall effect in monolayer MoS2 have shown the potential of two-dimensional semiconductor transition metal dichalcogenides for valley based electronic and optoelectronic applications. The valley Hall conductivity in monolayer MoS2, a non-centrosymmetric crystal, however, cannot be easily tuned, presenting a c…
We show that bilayer graphene exhibits magneto-electric effects that are formally similar to those commonly seen in band insulators with broken inversion and time-reversal symmetries. Three unusual features characterize the magneto-electric responses exhibited by bilayer graphene: (i) unlike most other magneto-electric media, bilayer graphene is a conductor, (ii) bilayer graphene has a non-quantized magneto-electric coupling even though its electronic structure does not break parity and time-reversal symmetry, and (iii) the magnitude of the magneto-electric coupling in bilayer graphene is dete…
By using different widths for two AlAs quantum wells comprising a bilayer system, we force the X-point conduction-band electrons in the two layers to occupy valleys with different Fermi contours, electron effective masses, and g-factors. Since the occupied valleys are at different X-points of the Brillouin zone, the interlayer tunneling is negligibly small despite the close electron layer spacing. We demonstrate the realization of this system via magneto-transport measurements and the observation of a phase-coherent, bilayer $ν$=1 quantum Hall state flanked by a reentrant insulating phase.
We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling barrier width for electrons on different graphene layers of bilayer graphene, coupled with the fact that its Landau level wave functions are not equally distributed amongst the layers with a distribution that is reversed between the two valleys, lead to valley polarisation of the tunnelling current. We estimate that valley polarisation $\sim 70\%$ can be achieve…
Valley-selective optical selection rules and a spin-valley locking in transition-metal dichalcogenide (TMDC) monolayers are at the heart of "valleytronic physics", which exploits the valley degree of freedom and has been a major research topic in recent years. In contrast, valleytronic properties of TMDC bilayers have not been in the focus so much by now. Here, we report on the valleytronic properties and optical characterization of bilayers of WS2 as a representative TMDC material. In particular, we study the influence of the relative layer alignment in TMDC homo-bilayer samples on their pola…
We investigate topological phases of bilayer graphene subject to antiferromagnetic exchange field, interlayer bias, and irradiated by light. We discover that at finite bias and light intensity the system transitions into a previously unknown spin-valley polarized quantum anomalous Hall (SVP-QAH) insulator state, for which the subsystem of one spin is a valley Hall topological insulator (TI) and that of the other spin is a QAH insulator. We assess the TI phases occurring in the system by analytically calculating the spin-valley dependent Chern number, and characterize them by considering edge s…
Theory predicts that the application of an electric field breaks the inversion symmetry of AB and BA stacked domains in twisted bilayer graphene, resulting in the formation of a triangular network of one-dimensional valley-protected helical states. This two-dimensional network of one-dimensional states has been observed in several studies, but direct experimental evidence that the electronic transport in these one-dimensional states is valley-protected is still lacking. In this study, we report the existence of the network in small-angle twisted bilayer graphene at room temperature. Moreover, …
In addition to electron charge and spin, novel materials host another degree of freedom, the valley. For a junction composed of valley filter sandwiched by two normal terminals, we focus on the valley efficiency under disorder with two valley filter models based on monolayer and bilayer graphene. Applying the transfer matrix method, valley resolved transmission coefficients are obtained. We find that: i) under weak disorder, when the line defect length is over about $15\rm nm$, it functions as a perfect channel (quantized conductance) and valley filter (totally polarized); ii) in the diffusive…
In monolayer group-VI transition metal dichalcogenides (TMDC), charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with electrical polarization. Here, we show that TMDC bilayers offer an unprecedented platform to realize a strong coupling between the spin, layer pseudospin, and valley degrees of freedom of holes. Such coupling not only gives rise to the spin Hall effect and spin circular dichroism in inversion symmetric bilayer, but also leads to a variety of magnetoelectric …
We investigated the valley depolarization and carrier relaxation process of monolayer and bilayer WS2 at 10 K by using time-resolved Kerr rotation (TRKR) and differential reflectance measurement simultaneously. Two decay processes extracted from TRKR signals were observed on both monolayer and bilayer WS2. In monolayer WS2, the initial ultrafast decay component (less than 1 ps) was interpreted as the stimulated emission or Pauli-blocking of electrons and holes in one valley by comparing with carrier decay process. The relatively slow component was around 4 ps under low excitation energy (less …
We report a study of one-dimensional subband splitting in a bilayer graphene quantum point contact in which quantized conductance in steps of $4\,e^2/h$ is clearly defined down to the lowest subband. While our source-drain bias spectroscopy measurements reveal an unconventional confinement, we observe a full lifting of the valley degeneracy at high magnetic fields perpendicular to the bilayer graphene plane for the first two lowest subbands where confinement and Coulomb interactions are the strongest and a peculiar merging/mixing of $K$ and $K'$ valleys from two non-adjacent subbands with indi…
Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to electrically control broken inversion symmetry or Berry curvature as well as the carrier density to generate and detect the pure valley current. We find a large nonlocal resistance and a cubic scaling between the nonlocal resistance and the local resistivity in the insulating regime at zero-magnetic field and 70 K as evidence of the pure valley current. The ele…
Propagation of an electron wave packet through a quantum point contact (QPC) defined by electrostatic gates in bilayer graphene is investigated. The gates provide a bias between the layers, in order to produce an energy gap. If the gates on both sides of the contact produce the same bias, steps in the electron transmission probability are observed, as in the usual QPC. However, if the bias is inverted on one of the sides of the QPC, only electrons belonging to one of the Dirac valleys are allowed to pass, which provides a very efficient valley filtering.
In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular magnetic field which couples by the valley g-factor. However, control over the valley g-factor has not been demonstrated yet. We experimentally determine the energy spectrum of a quantum point contact realized by a suitable gate geometry in bilayer graphene. Using finite bias spectroscopy we measure the energy scales arising from the lateral confinement as w…
Valley pseudospin, the quantum degree of freedom characterizing the degenerate valleys in energy bands, is a distinct feature of two-dimensional Dirac materials. Similar to spin, the valley pseudospin is spanned by a time reversal pair of states, though the two valley pseudospin states transform to each other under spatial inversion. The breaking of inversion symmetry induces various valley-contrasted physical properties; for instance, valley-dependent topological transport is of both scientific and technological interests. Bilayer graphene (BLG) is a unique system whose intrinsic inversion sy…
We present measurements of quantized conductance in electrostatically induced quantum point contacts in bilayer graphene. The application of a perpendicular magnetic field leads to an intricate pattern of lifted and restored degeneracies with increasing field: at zero magnetic field the degeneracy of quantized one-dimensional subbands is four, because of a twofold spin and a twofold valley degeneracy. By switching on the magnetic field, the valley degeneracy is lifted. Due to the Berry curvature states from different valleys split linearly in magnetic field. In the quantum Hall regime fourfold…
The chirality of electronic Bloch bands is responsible for many intriguing properties of layered two-dimensional materials. We show that in bilayers of transition metal dichalcogenides (TMDCs), unlike in few-layer graphene and monolayer TMDCs, both intra-layer and inter-layer couplings give important contributions to the Berry-curvature in the $K$ and $-K$ valleys of the Brillouin zone. The inter-layer contribution leads to the stacking dependence of the Berry curvature and we point out the differences between the commonly available 3R type and 2H type bilayers. Due to the inter-layer contribu…
Understanding how the electron spin is coupled to orbital degrees of freedom, such as a valley degree of freedom in solid-state systems is central to applications in spin-based electronics and quantum computation. Recent developments in the preparation of electrostatically-confined quantum dots in gapped bilayer graphene (BLG) enables to study the low-energy single-electron spectra in BLG quantum dots, which is crucial for potential spin and spin-valley qubit operations. Here, we present the observation of the spin-valley coupling in a bilayer graphene quantum dot in the single-electron regime…
Magnetic injection photocurrents in valley polarized states of twisted bilayer graphene
Donostia International Physics Center（圣塞巴斯蒂安国际物理中心）；Department of Physics, Columbia University（哥伦比亚大学物理系）；IKERBASQUE, Basque Foundation for Science（伊卡巴斯基克，巴斯克科学基金会）
In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers $n = 1, 2,\dots 50$ can be filled successively into the quantum system with charging energies exceeding $10 \ \mathrm{meV}$. For the lowest quantum states, we can clearly observe valley and Zeeman splittings with a spin g-factor of $g_{s}\approx 2$. In…
Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum anomalous Hall effect in bilayer graphene, by separately imprinting spin-orbit and magnetic proximity effects in different layers. This results in varying spin splittings for the conduction and valence bands, which gives rise to a topological gap at a single Dirac cone. The topological phase can be controlled by a gate voltage and switched between valleys by…
Umklapp-Enhanced Interlayer Valley Drag in Moiré Bilayers
Institute of Mathematical Sciences（数学科学研究所）；Tata Institute of Fundamental Research（塔塔基础研究所）；Indiana University（印第安纳大学）；Indian Institute of Technology - Kanpur（坎普尔印度理工学院）
Van der Waals heterostructures provide a rich platform for emergent physics due to their tunable hybridization of electronic orbital- and spin-degrees of freedom. Here, we show that a heterostructure formed by twisted bilayer graphene sandwiched between ferromagnetic insulators develops flat bands stemming from the interplay between twist, exchange proximity and spin-orbit coupling. We demonstrate that in this flat-band regime, the spin degree of freedom is hybridized, giving rise to an effective triangular superlattice with valley as a degenerate pseudospin degree of freedom. Incorporating el…
We present a microscopic theory for collective excitations of quantum anomalous Hall ferromagnets (QAHF) in twisted bilayer graphene. We calculate the spin magnon and valley magnon spectra by solving Bethe-Salpeter equations, and verify the stability of QAHF. We extract the spin stiffness from the gapless spin wave dispersion, and estimate the energy cost of a skyrmion-antiskyrmion pair, which is found to be comparable in energy with the Hartree-Fock gap. The valley wave mode is gapped, implying that the valley polarized state is more favorable compared to the valley coherent state. Using a no…
Proximity orbital and spin-orbit effects of bilayer graphene on monolayer WSe$_2$ are investigated from first-principles. We find that the built-in electric field induces an orbital band gap of about 10 meV in bilayer graphene. Remarkably, the proximity spin-orbit splitting for holes is two orders of magnitude---the spin-orbit splitting of the valence band at K is about 2 meV---more than for electrons. Effectively, holes experience spin-valley locking due to the strong proximity of the lower graphene layer to WSe$_2$. However, applying an external transverse electric field of some 1 V/nm, coun…
We study theoretically interaction of a bilayer graphene with a circularly polarized ultrafast optical pulse of a single oscillation at an oblique incidence. The normal component of the pulse breaks the inversion symmetry of the system and opens up a dynamical band-gap, due to which a valley-selective population of the conduction band becomes sensitive to the angle of incident of the pulse. We show that the magnitude of the valley polarization can be controlled by the angle of incidence, the amplitude, and the angle of in-plane polarization of the chiral optical pulse. Subsequently, a sequence…
Under a magnetic field perpendicular to an monolayer graphene, the existence of a two-dimensional periodic scatter array can not only mix Landau levels of the same valley for displaying split electron-hole Hofstadter-type energy spectra, but also couple two sets of Landau subbands from different valleys in a bilayer graphene. Such a valley mixing effect with a strong scattering strength has been found observable and studied thoroughly in this paper by using a Bloch-wave expansion approach and a projected $2\times 2$ effective Hamiltonian including interlayer effective mass, interlayer coupling…
It is shown that potential barriers in bilayer graphene (BLG) and monolayer transition metal dichalcogenides (TMDs) can split a valley unpolarized incident current into reflected and transmitted currents with opposite valley polarization. Valley asymmetric transmission inevitably occurs because of the low symmetry of the total Hamiltonian and when total external reflection occurs the transmission is 100% valley polarized in BLG and 100% spin and valley polarized in TMDs, except for exponentially small corrections. By adjusting the potential, 100% polarization can be obtained regardless of the …
Recently, the topological physics in artificial crystals for classical waves has become an emerging research area. In this Letter, we propose a unique bilayer design of sonic crystals that are constructed by two layers of coupled hexagonal array of triangular scatterers. Assisted by the additional layer degree of freedom, a rich topological phase diagram is achieved by simply rotating scatterers in both layers. Under a unified theoretical framework, two kinds of valley-projected topological acoustic insulators are distinguished analytically, i.e., the layer-mixed and layer-polarized topologica…
The development of valleytronics demands long-range electronic transport with preserved valley index, a degree of freedom similar to electron spin. A promising structure for this end is a topological one-dimensional (1D) channel formed in bilayer graphene (BLG) under special electrostatic conditions or specific stacking configuration, called domain wall (DW). In these 1D channels, the valley-index defines the propagation direction of the charge carriers and the chiral edge states (kink states) are robust over many kinds of disorder. However, the fabrication of DWs is challenging, requiring the…
Spin-valley 0.7 anomaly in bilayer graphene/WSe$_2$ quantum point contacts
Solid State Physics Laboratory, ETH Zürich（苏黎世联邦理工学院固态物理实验室）；Research Center for Materials Nanoarchitectonics, National Institute for Materials Science（国立材料研究所材料纳米结构研究中心）；Research Center for Electronic and Optical Materials, National Institute for Materials Science（国立材料研究所电子与光学材料研究中心）；Department of Physics, Ben-Gurion University of the Negev（内盖夫本-古里安大学物理系）
It has been recently shown that monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase exhibit relatively large orbital Hall conductivity plateaus within their energy band gaps, where their spin Hall conductivities vanish. However, since the valley Hall effect (VHE) in these systems also generates a transverse flow of orbital angular momentum it becomes experimentally challenging to distinguish between the two effects in these materials. The VHE requires inversion symmetry breaking to occur, which takes place in the TMD monolayers, but not in the bilayers. We show tha…
We report on the possibility to simultaneously generate in graphene a {\it bulk valley-polarized dissipative transport} and a {\it quantum valley Hall effect} by combining strain-induced gauge fields and real magnetic fields. Such unique phenomenon results from a resonance/anti-resonance effect driven by the superposition/cancellation of superimposed gauge fields which differently affect time reversal symmetry. The onset of a valley-polarized Hall current concomitant to a dissipative valley-polarized current flow in the opposite valley is revealed by a $e^2/h$ Hall conductivity plateau. We emp…
We present a study on the lifting of degeneracy of the size-quantized energy levels in an electrostatically defined quantum point contact in bilayer graphene by the application of in-plane magnetic fields. We observe a Zeeman spin splitting of the first three subbands, characterized by effective Landé $g$-factors that are enhanced by confinement and interactions. In the gate-voltage dependence of the conductance, a shoulder-like feature below the lowest subband appears, which we identify as a $0.7$ anomaly stemming from the interaction-induced lifting of the band degeneracy. We employ a phenom…
We study intrinsic DC spin and valley Hall conductivity in doped ferromagnetic silicene in the presence of an electric filed applied perpendicular to silicene sheet. By calculating its energy spectrum and wavefunction and by making use of Kubo formalism, we obtain a general relation for the transverse Hall conductivity which can be used to obtain spin- and valley-Hall conductivity. Our results, in the zero limit of the exchange field, reduces to the previous results. Furthermore we discuss electrically tunable spin and valley polarized transport in ferromagnetic silicene and obtain the necessa…
Since its discovery, Berry phase has been demonstrated to play an important role in many quantum systems. In gapped Bernal bilayer graphene, the Berry phase can be continuously tuned from zero to 2pi, which offers a unique opportunity to explore the tunable Berry phase on the physical phenomena. Here, we report experimental observation of Berry phases-induced valley splitting and crossing in moveable bilayer graphene p-n junction resonators. In our experiment, the bilayer graphene resonators are generated by combining the electric field of scanning tunneling microscope tip with the gap of bila…
A photoinduced current of a layered MoS2-based transistor is studied from first-principles. Under the illumination of circular polarized light, a valley-polarized current is generated, which can be tuned by the gate voltage. For monolayer MoS2, the valley-polarized spin-up (down) electron current at K (K') points is induced by the right (left) circular polarized light. The valley polarization is found to reach +1.0 (-1.0) for the valley current that carried such a K (K') index. For bilayer MoS2, the spin-up (down) current can be induced at both K and K' valleys by the right (left) circular lig…
Berry curvature is analogous to magnetic field but in momentum space and is commonly present in materials with non-trivial quantum geometry. It endows Bloch electrons with transverse anomalous velocities to produce Hall-like currents even in the absence of a magnetic field. We report the direct observation of in situ tunable valley-selective Hall effect (VSHE), where inversion symmetry, and thus the geometric phase of electrons, is controllable by an out-of-plane electric field. We use high-quality bilayer graphene with an intrinsic and tunable bandgap, illuminated by circularly polarized mid-…
Interlayer valley excitons in bilayer MoS2 feature concurrently large oscillator strength and long lifetime, and hence represent an advantageous scenario for valleytronic applications. However, control of valley pseudospin of interlayer excitons in pristine bilayer MoS2, which lies at the heart of valleytronics, has remained elusive. Here we report the observation of highly circularly polarized photoluminescence from interlayer excitons of bilayer MoS2 with both optical and magnetic addressability. Under excitation of circularly polarized light near exciton resonance, interlayer excitons of bi…
