HgTe量子阱和石墨烯多层膜中的齐纳隧穿同位旋霍尔效应
Zener tunneling isospin Hall effect in HgTe quantum wells and graphene multilayers
摘要：
齐纳二极管是基于晶闸管的电子器件中的典型器件，其由PN结组成，其中外部电场在电流-电压特性中诱导开关行为。我们研究了碲化汞量子阱和石墨烯多层膜中的齐纳隧穿。我们发现隧穿跃迁几率不对称地依赖于载流子对势垒的平行动量。在碲化汞量子阱中，不对称性对于每个自旋是相反的，而对于石墨烯多层膜，它对于每个谷自由度是相反的。在这两种情况下，产生在垂直于所施加的场的方向上流动的自旋/谷电流。我们涉及的起源，这种齐纳隧道自旋/谷霍尔效应的Berry相位时，他们从带隙区域反射的载流子获得。
英文摘要：
A Zener diode is a paradigmatic device in semiconductor-based electronics that consists of a pn junction where an external electric field induces a switching behavior in the current-voltage characteristics. We study Zener tunneling in HgTe quantum wells and graphene multilayers. We find that the tunneling transition probability depends asymmetrically on the parallel momentum of the carriers to the barrier. In HgTe quantum wells the asymmetry is the opposite for each spin, whereas for graphene multilayers it is the opposite for each valley degree of freedom. In both cases, a spin/valley current flowing in the perpendicular direction to the applied field is produced. We relate the origin of this Zener tunneling spin/valley Hall effect to the Berry phase acquired by the carriers when they are adiabatically reflected from the gapped region.
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