For a sample of an arbitrary shape, the dependence of its conductance on the longitudinal and Hall conductivity is identical to that of a rectangle. We use analytic results for a conducting rectangle, combined with the semicircle model for transport coefficients, to study properties of the monolayer and bilayer graphene. A conductance plateau centered at the neutrality point, predicted for square geometry, is in agreement with recent experiments. For rectangular geometry, the conductance exhibits maxima at the densities of compressible quantum Hall states for wide samples, and minima for narrow samples. The positions and relative sizes of these features are different in the monolayer and bilayer cases, indicating that the conductance can be used as a tool for sample diagnostic.
The linear conductance spectrum of a metallic graphene junction formed by interconnecting two gapless graphene nanoribbons is calculated. A strong conductance suppression appears in the vicinity of the Dirac point. We found that such a conductance suppression arises from the antiresonance effect associated with the edge state localized at the zigzag-edged shoulder of the junction. The conductance valley due to the antiresonance is rather robust in the presence of the impurity and vacancy scattering. And the center of the conductance valley can be readily tuned by an electric field exerted on t…
We study the effects of the interaction between electrons and holes on the conductance G of quasi-one-dimensional graphene systems. We first consider as a benchmark the limit in which all interactions are negligible, recovering the predictions of the tight-binding approximation for the spectrum of the system, and the well-known result G=4 e^2/h for the lowest conductance quantum. Then we consider an exactly solvable field theoretical model in which the electro-magnetic interactions are effectively local. Finally, we use the effective field theory formalism to develop an exactly solvable model …
We measured the conductance fluctuation of bi- and trilayer graphene devices prepared on mechanical exfoliated graphene by an all-dry, lithography-free process using an ultrathin quartz filament as a shadow mask. Reproducible fluctuations in conductance as a function of applied gate voltage or magnetic field were found. As the gate voltage was tuned so that the graphene device was pushed to the charge neutral point, the amplitude of the conductance fluctuation was found to be suppressed quickly from a value consistent with universal conductance fluctuation when the devices were still well with…
We study numerically the effects of edge and bulk disorder on the conductance of graphene nanoribbons. We compute the conductance suppression due to localization induced by edge scattering. We find that even for weak edge roughness, conductance steps are suppressed and transport gaps appear. These gaps are approximately inversely proportional to the nanoribbon width. On/off conductance ratios grow exponentially with the nanoribbon length. Our results impose severe limitations to the use of graphene in ballistic nanowires.
Electrical properties of multi-layer graphene are subject to variations due to random interlayer alignments. In this work we reported graphene interlayer conductance without special layer aligning. Ohmic contacts between two graphene layers are observed with resistance variations of more than one order. With Raman spectroscopy we identify that the lattice angle between twisted graphene layers is the key variation source. The angular dependence and temperature dependence of the interlayer conductance suggest that a phonon assistant tunneling mechanism is valid for the interlayer transport of gr…
We present numerical studies of conduction in graphene nanoribbons with different types of disorder. We find that even when defect scattering depresses the conductance to values two orders of magnitude lower than 2e^2/h, equally spaced conductance plateaus occur at moderately low temperatures due to enhanced electron backscattering near subband edge energies if bulk vacancies are present in the ribbon. This work accounts quantitatively for the surprising conductance quantization observed by Lin et al. [Phys. Rev. B 78, 161409 (2008)] in ribbons with such low conductances.
Within the Landauer transport formalism we demonstrate that conductance zeroes are possible in bipartite systems at half-filling when leads are contacted to different sublattice sites. In particular, we investigate the application of this theory to graphene quantum dots with leads in the armchair configuration. The obtained conductance cancellation is robust in the presence of any single-site impurity.
We study the electronic transport in a graphene-based superconductor-normal(graphene)-superconductor (SNS) junction by use of the Dirac-Bogoliubov-de Gennes equation. We consider the properties of tunneling conductance through an undoped strip of graphene with heavily doped superconducting electrodes in the dirty limit. We find that spectrum of Andreev bound states are modified in the presence of single localized defect in the bulk. The minimum tunneling conductance remains the same and this result doesn't depend on the actual location of the imperfection.
It is observed experimentally that the sign of the Hall resistance can be flipped by a dc electric current in the twisted bilayer graphene (TBG) at 3/4 filling of the four-fold degenerate conduction flat bands. The experiment implies a switching of the valley polarization (VP) and topology in TBG. Here we present a theory on the current-induced switching of VP and topology. The presence of current in the bulk causes {the} redistribution of {electron occupation} in bands near the Fermi energy, which then deforms and shifts the band dispersion due to the Coulomb interaction. Above a critical cur…
Explicit expressions of the band spectrum near the neutrality point for armchair and zigzag graphene ribbons and carbon nanotubes were derived based on a tight-binding macromolecule model of graphene. The obtained dispersion relations are used to determine and compare the conductance ladders of these structures and are beneficial for many other applications. Our results are different in many respects from previously reported data. This new information forms a solid reliable basis for evaluation of the potential of graphene nanoelectronic devices.
The relationship between the universal conductance fluctuation and the weak localization effect in monolayer graphene is investigated. By comparing experimental results with the predictions of the weak localization theory for graphene, we find that the ratio of the elastic intervalley scattering time to the inelastic dephasing time varies in accordance with the conductance fluctuation; this is a clear evidence connecting the universal conductance fluctuation with the weak localization effect. We also find a series of scattering lengths that are related to the phase shifts caused by magnetic fl…
We solve the Dirac equation, which describes charge massless chiral relativistic carriers in a two-dimensional graphene. We have identified and analysed a novel pseudospin-dependent scattering effect. We compute the tunneling conductance and generalize the analytical result in the presence of the tunable atomic potential of a graphene strip. The absence of back scattering in graphene is shown to be due to Berry's phase which corresponds to a sign change of the wave function under a spin rotation of a particle. We use the transfer matrix approach and find that the electric conductance of doped …
Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped samples to be distinguished, including N-shaped distortions of quantum Hall plateaus and conductance peaks and dips at the charge neutrality point. Generally good agreement is found between measurement and theory. Possible origins of discrepancies are discussed.
Feedback-controlled electric breakdown of graphene in air or vacuum is a well-established way of fabricating tunnel junctions, nanogaps, and quantum dots. We show that the method is equally applicable to encapsulated graphene constrictions fabricated using hydrogen silsesquioxane. The silica-like layer left by hydrogen silsesquioxane resist after electron-beam exposure remains intact after electric breakdown of the graphene. We explore the conductance switching behavior that is common in graphene nanostructures fabricated via feedback-controlled breakdown, and show that it can be attributed to…
In graphene, the valleys represent spin-like quantities and can act as a physical resource in valley-based electronics to novel quantum computation schemes. Here we demonstrate a direct route to tune and read the valley quantum states of disordered graphene by measuring the mesoscopic conductance fluctuations. We show that the conductance fluctuations in graphene at low temperatures are reduced by a factor of four when valley triplet states are gapped in the presence of short range potential scatterers at high carrier densities. We also show that this implies a gate tunable universal symmetry …
Graphene pn junction is the brick to build up variety of graphene nano-structures. The analytical formula of the conductance of graphene gradual pn junctions in the whole bipolar region has been absent up to now. In this paper, we analytically calculated that pn conductance with the spin-orbit coupling and stagger potential taken into account. Our analytical expression indicates that the energy gap causes the conductance to drop a constant value with respect to that without gap in a certain parameter region, and manifests that the curve of the conductance versus the stagger potential consists …
We study the charge and spin transport in a two terminal graphene nanoribbon (GNR) decorated with random Gold (Au) adatoms using a Kane-Mele model. Two commonly used GNRs, that is, the armchair graphene nanoribbon (AGNR) and the zigzag graphene nanoribbon (ZGNR) are compared and contrasted, which shows that in presence of Au adatoms, a somewhat robust $2e^2/h$ conductance plateau occurs in the case of AGNR around the zero of the Fermi energy, while in ZGNR this plateau is fragile. We show that this flat plateau, having a conductance value $2e^2/h$, is not a hallmark signature of a topologicall…
We show that for graphene with any finite difference in the on-site energy between the two sub-lattices ($Δ$), The optical absorption edge is determined by the $Δ$. The universal conductance will be broken and the conductance near the band edge varies with frequency as $1/ω^2$. Moreover, we have identified another universal conductance for such systems without inversion symmetry, i.e., the onset conductance at the band edge is $% σ_c=2σ_0=πe^2/2h$, independent of the size of the band gap. The total integrated optical response is nearly conserved despite of the opening of the band gap.
We calculate the spin-dependent zero-bias conductance $G_{σσ'}$ in armchair graphene nanoribbons with hydrogen adsorbates employing a DFT-based ab initio transport formalism including spin-orbit interaction. We find that the spin-flip conductance $G_{σ\barσ}$ can reach the same order of magnitude as the spin-conserving one, $G_{σσ}$, due to exchange-mediated spin scattering. In contrast, the genuine spin-orbit interaction appears to play a secondary role, only.
In this paper we study in detail the effect of the rotational alignment between a hexagonal boron nitride (hBN) slab and the graphene layers in the vertical current of a a graphene-hBN-graphene device. We show how for small rotational angles, the transference of momentum by the hBN crystal lattice leads to multiple peaks in the I-V curve of the device, giving origin to multiple regions displaying negative differential conductance. We also study the effect of scattering by phonons in the vertical current an see how the opening up of inelastic tunneling events allowed by spontaneous emission of …
We present the results of million atom electronic quantum transport calculations for graphene nanoconstrictions with edges that are smooth apart from atomic scale steps. We find conductances quantized in integer multiples of 2e2/h and a plateau at ~0.5*2e2/h as in recent experiments [Tombros et al., Nature Physics 7, 697 (2011)]. We demonstrate that, surprisingly, conductances quantized in integer multiples of 2e2/h occur even for strongly non-adiabatic electron backscattering at the stepped edges that lowers the conductance by one or more conductance quanta below the adiabatic value. We also …
The contact conductance between graphene and two quantum wires which serve as the leads to connect graphene and electron reservoirs is theoretically studied. Our investigation indicates that the contact conductance depends sensitively on the graphene-lead coupling configuration. When each quantum wire couples solely to one carbon atom, the contact conductance vanishes at the Dirac point if the two carbon atoms coupling to the two leads belong to the same sublattice of graphene. We find that such a feature arises from the chirality of the Dirac electron in graphene. Such a chirality associated …
Graphene is a promising candidate for building fast and ultra-sensitive bolometric detectors due to its weak electron-phonon coupling and low heat capacity. In order to realize a practical graphene-based bolometer, several important issues, including the nature of radiation response, coupling efficiency to the radiation and the thermal conductance need to be carefully studied. Addressing these issues, we present graphene-superconductor junctions as a viable option to achieve efficient and sensitive bolometers, with the superconductor contacts serving as hot electron barriers. For a graphene-su…
We consider electron waveguides (quantum wires) in graphene created by suitable inhomogeneous magnetic fields. The properties of uni-directional snake states are discussed. For a certain magnetic field profile, two spatially separated counter-propagating snake states are formed, leading to conductance quantization insensitive to backscattering by impurities or irregularities of the magnetic field.
Conductance fluctuations produced by the presence of disorder in zigzag and armchair graphene nanoribbons are studied. We show that quantum transport in zigzag nanoribbons takes place via edge states which are exponentially localized, as in the standard Anderson localization problem, whereas for armchair nanoribbons the symmetry of the graphene sublattices produces anomalous localization, or delocalization. We show that these two different electron localizations lead to significant differences of the conductance statistics between zigzag and armchair nanoribbons. In particular, armchair nanori…
Provided the electrical properties of electro-burnt graphene junctions can be understood and controlled, they have the potential to underpin the development of a wide range of future sub-10nm electrical devices. We examine both theoretically and experimentally the electrical conductance of electro-burnt graphene junctions at the last stages of nanogap formation. We account for the appearance of a counterintuitive increase in electrical conductance just before the gap forms. This is a manifestation of room-temperature quantum interference and arises from a combination of the semi-metallic band …
We investigate the impact of strained nanobubbles on the conductance characteristics of graphene nanoribbons using a combined molecular dynamics - tight-binding simulation scheme. We describe in detail how the conductance, density of states, and current density of zigzag or armchair graphene nanoribbons are modified by the presence of a nanobubble. In particular, we establish that low-energy electrons can be confined in the vicinity or within the nanobubbles by the delicate interplay between the pseudomagnetic field pattern created by the shape of the bubble, mode mixing, and substrate interac…
The electronic and transport properties of graphene modulated by magnetic barrier arrays are derived for finite temperature. Prominent conductance gaps, originating from quantum interference effects are found in the periodic array case. When a structural defect is inserted in the array, sharp defect modes of high conductance appear within the conductance gaps. These modes can be shifted by local doping in the defect region resulting into sensing of the chemical molecules that adhere on the graphene sheet. In general it is found that sensitivity is strongly dependent on temperature due to smoot…
Locally-gated single-layer graphene sheets have unusual discrete energy states inside the potential barrier induced by a finite-width gate. These states are localized outside the Dirac cone of continuum states and are responsible for novel quantum transport phenomena. Specifically, the longitudinal (along the barrier) conductance exhibits oscillations as a function of barrier height and/or width, which are both controlled by a nearby gate. The origin of these oscillations can be traced back to singularities in the density of localized states. These graphene conductance-oscillations resemble th…
We report the experimental observation of conductance quantization in graphene nanoribbons, where 1D transport subbands are formed due to the lateral quantum confinement. We show that this quantization in graphene nanoribbons can be observed at temperatures as high as 80 K and channel lengths as long as 1.7 $μ$m. The observed quantization is in agreement with that predicted by theoretical calculations.
Interlayer Conductance in the Armchair Nanotube -- Zigzag Graphene Ribbon Parallel Contact: Theoretical Proposal of Detection of Wavefunction Growing from the Edge to the Center in the Graphene Ribbon
We show a dramatic deviation from ergodicity for the conductance fluctuations in graphene. In marked contrast to the ergodicity of dirty metals, fluctuations generated by varying magnetic field are shown to be much smaller than those obtained when sweeping Fermi energy. They also exhibit a strongly anisotropic response to the symmetry-breaking effects of a magnetic field, when applied perpendicular or parallel to the graphene plane. These results reveal a complex picture of quantum interference in graphene, whose description appears more challenging than for conventional mesoscopic systems.
We study the conductance of a biased bilayer graphene flake with monolayer nanoribbon contacts. We find that the transmission through the bilayer ribbon strongly depends on the applied bias between the two layers and on the relative position of the monolayer contacts. Besides the opening of an energy gap on the bilayer, the bias allows to tune the electronic density on the bilayer flake, making possible the control of the electronic transmission by an external parameter.
Ballistic transport through an impurity-free section of the Corbino disk in graphene is investigated by means of the Landauer-Büttiker formalism in the mesoscopic limit. In the linear-responce regime the conductance is quantized in steps close to integer multiples of $4e^{2}/h$, yet Fabry-Perot oscillations are strongly suppressed. The quantization arises for small opening angles $θ\lesssimπ/3$ and large radii ratios $R_2/R_1\gtrsim{}10$. We find that the condition for emergence of the $n$-th conductance step can be written as $\sqrt{n}θ/π\ll{}1$. A brief comparison with the conductance spectr…
The temperature effect of quantum interference on resistivity is examined in monolayer graphene, with experimental results showing that the amplitude of the conductance fluctuation increases as temperature decreases. We find that this behavior can be attributed to the decrease in the inelastic scattering (dephasing) rate, which enhances the weak localization (WL) correction to resistivity. Following a previous report that explained the relationship between the universal conductance fluctuation (UCF) and WL regarding the gate voltage dependence (D. Terasawa, et al., Phys. Rev. B 95 125427 (2017…
At high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall channels co-propagate. It has been predicted by Tworzidło and co-workers that if only the lowest Landau level is filled on both sides of the junction, the conductance is determined by the valley (isospin) polarization at the edges and by the width of the flake. This effect remained hidden so far due to scattering between the channels co-propagating along the \tex…
We investigate spin conductance in zigzag graphene nanoribbons and propose a spin injection mechanism based only on graphitic nanostructures. We find that nanoribbons with atomically straight, symmetric edges show zero spin conductance, but nonzero spin Hall conductance. Only nanoribbons with asymmetrically shaped edges give rise to a finite spin conductance and can be used for spin injection into graphene. Furthermore, nanoribbons with rough edges exhibit mesoscopic spin conductance fluctuations with a universal value of $\mathrm{rms} G_\mathrm{s}\approx 0.4 e/4π$.
The electronic transmission and conductance of a gapped graphene superlattice were calculated by means of the transfer-matrix method. The system that we study consists of a sequence of electron-doped graphene as wells and hole-doped graphene as barriers. We show that the transmission probability approaches unity at some critical value of the gap. We also find that there is a domain around the critical gap value for which the conductance of the system attains its maximum value.
We investigate conductance fluctuations as a function of carrier density $n$ and magnetic field in diffusive mesoscopic samples made from monolayer and bilayer graphene. We show that the fluctuations' correlation energy and field, which are functions of the diffusion coefficient, have fundamentally different variations with $n$, illustrating the contrast between massive and massless carriers. The field dependent fluctuations are nearly independent of $n$, but the $n$-dependent fluctuations are not universal and are largest at the charge neutrality point. We also measure the second order conduc…
We have studied numerically the mesoscopic fluctuations of the conductance of a graphene strip (width W large compared to length L), in an ensemble of samples with different realizations of the random electrostatic potential landscape. For strong disorder (potential fluctuations comparable to the hopping energy), the variance of the conductance approaches the value predicted by the Altshuler-Lee-Stone theory of universal conductance fluctuations. For weaker disorder the variance is greatly enhanced if the potential is smooth on the scale of the atomic separation. There is no enhancement if the…
Despite the importance of high thermal conductance (i.e. low thermal resistance) of metal contacts to thermal management of graphene devices, prior reported thermal conductance of metal/graphene interfaces are all relatively low, only 20-40 MW m$^{-2}$ K$^{-1}$. One possible route to improve the thermal conductance ($G$) of metal/graphene interfaces is through additional heat conduction by electrons, since graphene can be easily doped by metals. In this paper, we evaluate the electronic heat conduction across metal/graphene interfaces by measuring the thermal conductance of Pd/transferred grap…
We use the non-equilibrium Green function (NEGF) method in the ballistic limit to provide a quantitative description of the conductance of graphene pn junctions - an important building block for graphene electronics devices. In this paper, recent experiments on graphene junctions are explained by a ballistic transport model, but only if the finite junction transition width, Dw, is accounted for. In particular, the experimentally observed anamolous increase in the resistance asymmetry between nn and np junctions under low source/drain charge density conditions is also quantitatively captured by…
Thermal conductance of graphene nanoribbons (GNRs) with the width varying from 0.5 to 35 nm is systematically investigated using nonequilibrium Green's function method. Anisotropic thermal conductance is observed with the room temperature thermal conductance of zigzag GNRs up to ~ 30% larger than that of armchair GNRs. At room temperature, the anisotropy is found to disappear until the width is larger than 100 nm. This intrinsic anisotropy originate from different boundary condition at ribbon edges, and can be used to tune thermal conductance, which have important implications for the applicat…
We investigate the transport characteristics of monolayer graphene p-n junctions by means of the non-equilibrium Green's function technique. It is shown that thanks to the high interband tunneling of chiral fermions and to a finite bandgap opening when the inversion symmetry of graphene plane is broken, a strong negative-differential-conductance behavior with peak-to-valley ratio as large as a few tens can be achieved even at room temperature. The dependence of this behavior on the device parameters such as the Fermi energy, the barrier height, and the transition length is then discussed.
We study conductance across a twisted bilayer graphene coupled to single-layer graphene leads in two setups: a flake of graphene on top of an infinite graphene ribbon and two overlapping semi-infinite graphene ribbons. We find conductance strongly depends on the angle between the two graphene layers and identify three qualitatively different regimes. For large angles ($θ\gtrsim 10^{\circ}$) there are strong commensurability effects for incommensurate angles the low energy conductance approaches that of two disconnected layers, while sharp conductance features correlate with commensurate angles…
We study fluctuations of the conductance of micron-sized graphene devices as a function of the Fermi energy and magnetic field. The fluctuations are studied in combination with analysis of weak localization which is determined by the same scattering mechanisms. It is shown that the variance of conductance fluctuations depends not only on inelastic scattering that controls dephasing but also on elastic scattering. In particular, contrary to its effect on weak localization, strong intervalley scattering suppresses conductance fluctuations in graphene. The correlation energy, however, is independ…
A theory of electron states for graphene nanoribbons with a smoothly varying width is developed. It is demonstrated that the standard adiabatic approximation allowing to neglect the mixing of different standing waves is more restrictive for the massless Dirac fermions in graphene than for the conventional electron gas. For the case of zigzag boundary conditions, one can expect a well-pronounced conductance quantization only for highly excited states. This difference is related to the relativistic Zitterbewegung effect in graphene.
We analyze universal conductance fluctuations (UCF) in graphene in the framework of diagrammatic perturbation theory in the metallic regime. It is shown that strong inter-valley scattering lifts the valley degeneracy of electronic states, whereas at weak inter-valley scattering two valleys contribute independently such that the variance of UCF would be expected to show sample- and geometry-dependent behavior.
We investigate spin transport in diffusive graphene nanoribbons with both clean and rough zigzag edges, and long-range potential fluctuations. The long-range fields along the ribbon edges cause the local doping to come close to the charge neutrality point forming $p$-$n$ junctions with localized magnetic moments, similar to the predicted magnetic edge of clean zigzag graphene nanoribbons. The resulting random edge magnetization polarizes charge currents and causes sample-to-sample fluctuations of the spin currents obeying universal predictions. We show furthermore that, although the average sp…
P-N junctions in graphene on ferroelectric have been actively studied, but the impact of piezoelectric effect in ferroelectric substrate with ferroelectric domain walls (FDWs) on graphene characteristics was not considered. Due to the piezo-effect ferroelectric domain stripes with opposite spontaneous polarizations elongate or contract depending on the polarity of voltage applied to the substrate. We show that the alternating piezoelectric displacement of the ferroelectric domain surfaces can lead to the alternate stretching and separation of graphene areas at the steps between elongated and c…
Grain boundaries (GBs) are ubiquitous in polycrystalline graphene materials obtained by various growth methods. It has been shown previously that considerable electrical transport gap can be opened by grain boundaries. On the other hand, polycrystalline graphene with GBs is an atomically thin membrane that can sustain extraordinary amount of strain. Here, by using atomistic quantum transport numerical simulations, we examine modulation of electrical transport properties of graphene GBs. The results indicate the modulation of transport gap and electrical conductance strongly depends on the topo…
Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nano-scale square antidot arrays have been fabricated on these graphene films. At low temperatures, magneto-conductance in these films exhibits pronounced Aharonov-Bohm oscillations with the period corresponding to magnetic flux quanta added to the area of a single antidot. At low fields, weak localization is observed and its visibility is enhanced by intravalley scattering on antidot edges. At high fields, we observe two distinctive minima in magnetoconductan…
Electron transport in bilayer graphene placed under a perpendicular electric field is revealed experimentally. Steep increase of the resistance is observed under high electric field; however, the resistance does not diverge even at low temperatures. The observed temperature dependence of the conductance consists of two contributions: the thermally activated (TA) conduction and the variable range hopping (VRH) conduction. We find that for the measured electric field range (0 - 1.3 V/nm) the mobility gap extracted from the TA behavior agrees well with the theoretical prediction for the band gap …
The universal quantization of thermal conductance provides information on the topological order of a state beyond electrical conductance. Such measurements have become possible only recently, and have discovered, in particular, that the value of the observed thermal conductance of the 5/2 state is not consistent with either the Pfaffian or the anti-Pfaffian model, motivating several theoretical articles. The analysis of the experiments has been made complicated by the presence of counter-propagating edge channels arising from edge reconstruction, an inevitable consequence of separating the dop…
We report a theoretical investigation of quantized spin-Hall conductance fluctuation of graphene devices in the diffusive regime. Two graphene models that exhibit quantized spin-Hall effect (QSHE) are analyzed. Model-I is with unitary symmetry under an external magnetic field $B\ne 0$ but with zero spin-orbit interaction, $t_{SO}=0$. Model-II is with symplectic symmetry where B=0 but $t_{SO} \ne 0$. Extensive numerical calculations indicate that the two models have exactly the same universal QSHE conductance fluctuation value $0.285 e/4π$ regardless of the symmetry. Qualitatively different fro…
We study conductance fluctuations (CF) and the sensitivity of the conductance to the motion of a single scatterer in two-dimensional massless Dirac systems. Our extensive numerical study finds limits to the predicted universal value of CF. We find that CF are suppressed for ballistic systems near the Dirac point and approach the universal value at sufficiently strong disorder. The conductance of massless Dirac fermions is sensitive to the motion of a single scatterer. CF of order $e^2/h$ result from the motion of a single impurity by a distance comparable to the Fermi wavelength. This result a…
Graphene on ferroelectric structures can be promising candidates for advanced field effect transistors, modulators and electrical transducers, providing that research of their electrotransport and electromechanical performances can be lifted up from mostly empirical to prognostic theoretical level.Recently we have shown that alternating piezoelectric displacement of the ferroelectric domain surfaces can lead to the alternate stretching and separation of graphene areas at the steps between elongated and contracted domains, and the conductance of graphene channel can be increased essentially at …
We investigate the mesoscopic disorder induced rms conductance variance $δG$ in a few layer graphene nanoribbon (FGNR) contacted by two superconducting (S) Ti/Al contacts. By sweeping the back-gate voltage, we observe pronounced conductance fluctuations superimposed on a linear background of the two terminal conductance G. The linear gate-voltage induced response can be modeled by a set of inter-layer and intra-layer capacitances. $δG$ depends on temperature T and source-drain voltage $V_{sd}$. $δG$ increases with decreasing T and $|V_{sd}|$. When lowering $|V_{sd}|$, a pronounced cross-over a…
Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in facilitating interlayer conduction. The resulting dependence on orientation is radically different than previously expected, and far more favorable for device applications. At low temperatures, we predict diode-like current-voltage characteristics due to a phonon bottleneck. Simple scaling relationships give a good description of the conductance as a function of temperature, doping, rotation angle, and bias voltage, re…
In this paper, we study a theoretical method to calculate the conductance across a square barrier potential in monolayer graphene. We have obtained an analytical expression for the transmission coefficient across a potential barrier for monolayer graphene. Using the transmission coefficient obtained we have an analytical expression for the conductance. This expression will be used to calculate the conductance in the case in which there is a potential barrier, which in our case will modelise the behaviour of a top gate voltage of a field effect transistor. Once this analysis has been performed …
