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arXiv 0811.1295cond-mat.mes-hall
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石墨烯PN结的电导不对称性

Conductance asymmetry of graphene pn junction

Tony Low, Seokmin Hong, Joerg Appenzeller, Supriyo Datta, Mark Lundstrom

摘要:

我们使用非平衡格林函数(NEGF)方法在弹道极限下提供石墨烯PN结电导的定量描述-石墨烯电子器件的重要构建块。在本文中,最近的实验石墨烯结解释的弹道输运模型,但只有当有限的结过渡宽度,DW,占。特别是,实验观察到的anamolous增加在低源极/漏极电荷密度条件下的nn和np结之间的电阻不对称性也定量捕获我们的模型。鉴于在电子聚焦等应用中对尖锐结的要求,我们还研究了Dw小的情况下的PN结电导,发现波函数失配(所谓的伪自旋)在尖锐PN结中起着重要作用。

英文摘要:

We use the non-equilibrium Green function (NEGF) method in the ballistic limit to provide a quantitative description of the conductance of graphene pn junctions - an important building block for graphene electronics devices. In this paper, recent experiments on graphene junctions are explained by a ballistic transport model, but only if the finite junction transition width, Dw, is accounted for. In particular, the experimentally observed anamolous increase in the resistance asymmetry between nn and np junctions under low source/drain charge density conditions is also quantitatively captured by our model. In light of the requirement for sharp junctions in applications such as electron focusing, we also examine the pn junction conductance in the regime where Dw is small and find that wavefunction mismatch (so-called pseudo-spin) plays a major role in sharp pn junctions.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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