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arXiv 1606.08007cond-mat.mes-hall
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石墨烯pn结量子霍尔沟道的栅控电导增强

Gate-controlled conductance enhancement from quantum Hall channels along graphene p-n junctions

Endre Tóvári, Péter Makk, Ming-Hao Liu, Peter Rickhaus, Zoltán Kovács-Krausz, Klaus Richter, Christian Schönenberger, Szabolcs Csonka

摘要:

使用各种接触和栅极几何形状的量子霍尔通道内的石墨烯块的形成进行了研究。沿样品的纵向产生pn结,并且在双极掺杂的情况下,由于在体中形成新的导电沟道,观察到增强的电导,所述沟道的位置、传播方向以及在一种几何形状中与电极的耦合由器件两端的栅极控制填充因子确定。这种效应可以用来探测量子霍尔通道的行为和相互作用,以防止边缘处不受控制的散射。

英文摘要:

The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to new conducting channels forming in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scattering at the edges.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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