We analyze universal conductance fluctuations (UCF) in graphene in the framework of diagrammatic perturbation theory in the metallic regime. It is shown that strong inter-valley scattering lifts the valley degeneracy of electronic states, whereas at weak inter-valley scattering two valleys contribute independently such that the variance of UCF would be expected to show sample- and geometry-dependent behavior.
We report the experimental observation of conductance quantization in graphene nanoribbons, where 1D transport subbands are formed due to the lateral quantum confinement. We show that this quantization in graphene nanoribbons can be observed at temperatures as high as 80 K and channel lengths as long as 1.7 $μ$m. The observed quantization is in agreement with that predicted by theoretical calculations.
The electronic transmission and conductance of a gapped graphene superlattice were calculated by means of the transfer-matrix method. The system that we study consists of a sequence of electron-doped graphene as wells and hole-doped graphene as barriers. We show that the transmission probability approaches unity at some critical value of the gap. We also find that there is a domain around the critical gap value for which the conductance of the system attains its maximum value.
Thermal conductance of graphene nanoribbons (GNRs) with the width varying from 0.5 to 35 nm is systematically investigated using nonequilibrium Green's function method. Anisotropic thermal conductance is observed with the room temperature thermal conductance of zigzag GNRs up to ~ 30% larger than that of armchair GNRs. At room temperature, the anisotropy is found to disappear until the width is larger than 100 nm. This intrinsic anisotropy originate from different boundary condition at ribbon edges, and can be used to tune thermal conductance, which have important implications for the applicat…
We study conductance across a twisted bilayer graphene coupled to single-layer graphene leads in two setups: a flake of graphene on top of an infinite graphene ribbon and two overlapping semi-infinite graphene ribbons. We find conductance strongly depends on the angle between the two graphene layers and identify three qualitatively different regimes. For large angles ($θ\gtrsim 10^{\circ}$) there are strong commensurability effects for incommensurate angles the low energy conductance approaches that of two disconnected layers, while sharp conductance features correlate with commensurate angles…
We study fluctuations of the conductance of micron-sized graphene devices as a function of the Fermi energy and magnetic field. The fluctuations are studied in combination with analysis of weak localization which is determined by the same scattering mechanisms. It is shown that the variance of conductance fluctuations depends not only on inelastic scattering that controls dephasing but also on elastic scattering. In particular, contrary to its effect on weak localization, strong intervalley scattering suppresses conductance fluctuations in graphene. The correlation energy, however, is independ…
A theory of electron states for graphene nanoribbons with a smoothly varying width is developed. It is demonstrated that the standard adiabatic approximation allowing to neglect the mixing of different standing waves is more restrictive for the massless Dirac fermions in graphene than for the conventional electron gas. For the case of zigzag boundary conditions, one can expect a well-pronounced conductance quantization only for highly excited states. This difference is related to the relativistic Zitterbewegung effect in graphene.
P-N junctions in graphene on ferroelectric have been actively studied, but the impact of piezoelectric effect in ferroelectric substrate with ferroelectric domain walls (FDWs) on graphene characteristics was not considered. Due to the piezo-effect ferroelectric domain stripes with opposite spontaneous polarizations elongate or contract depending on the polarity of voltage applied to the substrate. We show that the alternating piezoelectric displacement of the ferroelectric domain surfaces can lead to the alternate stretching and separation of graphene areas at the steps between elongated and c…
Conductance fluctuation is usually unavoidable in graphene nanoribbons (GNR) due to the presence of disorder along its edges. By measuring the low-frequency noise in GNR devices, we find that the conductance fluctuation is strongly correlated with the density-of-states of GNR. In single-layer GNR, the gate-dependence of noise shows peaks whose positions quantitatively match the subband positions in the band structures of GNR. This correlation provides a robust mechanism to electrically probe the band structure of GNR, especially when the subband structures are smeared out in conductance measur…
Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of barriers, h-BN, Cu(111), and graphite, of various thickness (0-3 layers) are considered and the electrically biased conductance of the Ni/Barrier/Graphene junction are calculated. It is found that the minority spin transport channel of graphene can be strongly suppressed by the insulating h-BN barrier, resulting in a high spin injection efficiency. On the other h…
We report a full self-consistent ab initio calculation of the conductance of a diarylethene-based molecular switch with two graphene electrodes. Our result show the contributions of the resonant states of the molecule, of the electrode density of states, and of graphene unique features such as edge states. The conductivities are found to be significantly different for the two photochromic isomers at zero and finite applied bias. Further we point out the possibility of causing the switching by the application of a large potential difference between the two electrodes.
Graphene has emerged as an electronic material that is promising for device applications and for studying two-dimensional electron gases with relativistic dispersion near two Dirac points. Nonetheless, deviations from Dirac-like spectroscopy have been widely reported with varying interpretations. Here we show evidence for strain-induced spatial modulations in the local conductance of single-layer graphene on SiO2 substrates from scanning tunneling microscopic (STM) studies. We find that strained graphene exhibits parabolic, U-shaped conductance vs. bias voltage spectra rather than the V-shaped…
We present a technique to fabricate tunnel junctions between graphene and Al and Cu, with a Si back gate, as well as a simple theory of tunneling between a metal and graphene. We map the differential conductance of our junctions versus probe and back gate voltage, and observe fluctuations in the conductance that are directly related to the graphene density of states. The conventional strong-suppression of the conductance at the graphene Dirac point can not be clearly demonstrated, but a more robust signature of the Dirac point is found: the inflection in the conductance map caused by the elect…
The effect of the SiO$_2$ substrate on a graphene film is investigated using realistic but computationally convenient energy-optimized models of the substrate supporting a layer of graphene. The electronic bands are calculated using density-functional methods for several model substrates. This provides an estimate of the substrate-charge effects on the behaviour of the bands near $E_F$, as well as a variation of the equilibrium distance of the graphene sheet. A model of a wavy graphene layer is examined as a possible candidate for understanding the nature of the minimally conducting states in …
Large assemblies of self-organized aluminum nanoclusters embedded in an oxide layer are formed on graphene templates and used to build tunnel-junction devices. Unexpectedly, single-electron-transport behavior with well-defined Coulomb oscillations is observed for a record junction area containing millions of metal islands. Such hybrid materials offer new prospects for single-electron electronics.
Review is devoted to the recent theoretical studies of the impact of domain structure of ferroelectric substrate on graphene conductance. An analytical description of the hysteresis memory effect in a field effect transistor based on graphene-on-ferroelectric, taking into account absorbed dipole layers on the free surface of graphene and localized states on its interfaces is considered. The aspects of the recently developed theory of p-n junctions conductivity in a graphene channel on a ferroelectric substrate, which are created by a 180-degree ferroelectric domain structure, are analyzed, and…
Graphene has drawn wide attention due to its exceptional thermal conductivity but complete understanding of thermal characteristics of polycrystalline graphene is still elusive to date. For the first time, herein, we have systematically studied the effect of temperature on the thermal conductance behavior of polycrystalline graphene for a range of grain sizes and grain boundary types, by using non-equilibrium molecular dynamics simulations. It is noted that increasing the tempera-ture remarkably enhances thermal boundary conductance (Kapitza conductance) across grain boundaries while it deteri…
We employ classical molecular dynamics to study the nonlinear thermal transport in graphene nanoribbons (GNRs). For GNRs under large temperature biases beyond linear response regime, we have observed the onset of negative differential thermal conductance (NDTC). NDTC is tunable by varying the manner of applying the temperature biases. NDTC is reduced and eventually disappears when the length of the GNR increases. We have also observed NDTC in triangular GNRs, where NDTC exists only when the heat current is from the narrower to the wider end. These effects may be useful in nanoscale thermal man…
We report measurements of magnetoresistance in single-layer graphene as a function of gate voltage (carrier density) at 250 mK. By examining signatures of weak localization (WL) and universal conductance fluctuations (UCF), we find a consistent picture of phase coherence loss due to electron-electron interactions. The gate-dependence of the elastic scattering terms suggests that the effect of trigonal warping, i.e., the non-linearity of the dispersion curves, may be strong at high carrier densities, while intra-valley scattering may dominate close to the Dirac point. In addition, a decrease in…
We present a first-principles study of the migration and recombination of edge defects (carbon adatom and/or vacancy) and their influence on electrical conductance in zigzag graphene nanoribbons (ZGNRs). It is found that at room temperature, the adatom is quite mobile while the vacancy is almost immobile along the edge of ZGNRs. The recombination of an adatom-vacancy pair leads to a pentagon-heptagon ring defect structure having a lower energy than the perfect edge, implying that such an edge-defect can be formed spontaneously. This edge defect can suppresses the conductance of ZGNRs drastical…
The effects of Ga+ ion irradiation and high temperature annealing on behavior of nanocrystalline graphene directly grown on quartz and sapphire are presented. It is shown that nanocrystalline graphene stands fairly high doses of ion irradiation (up to 3e14 cm-2 of 5 to 50 keV Ga+ ions) without degradation in conductance. At higher doses, nanocrystalline graphene rapidly loses its conductance and at doses over 2e15 cm-2 becomes actually insulating. Annealing in vacuum restores conductance of the irradiated nanocrystalline graphene and, if the irradiation has not exceeded a dose of 3e15 cm-2, th…
An exact description of $π$ electrons based on the tight-binding model of graphene as an alternant, plane macromolecule is presented. The model molecule can contain an arbitrary number of benzene rings and has armchair- and zigzag-shaped edges. This suggests an instructive alternative to the most commonly used approach, where the reference is made to the honeycomb lattice periodic in its A and B sublattices. Several advantages of the macromolecule model are demonstrated. The newly derived analytical relations detail our understanding of $π$ electron nature in achiral graphene ribbons and carbo…
This study theoretically investigated the magnetic properties and electronic structure of a graphene-based nano-spin-valve-like structure. Magnetic nickel layers on both sides of the graphene were considered. A spin-polarized generalized-gradient approximation determined the electronic states. In an energetically stable stacking arrangement of graphene and two nickel layers, the anti-parallel spin configuration of the underlayer and overlayer magnetic moments had the lowest energy, which is in agreement with previous experimental studies. The spin density mapping and obtained band-structure re…
We study analytically and numerically the magnetotransport of strained graphene in a Corbino geometry gating in the presence of an external perpendicular magnetic field. The conductance of the Corbino disc of deformed graphene with a uniaxial and an inhomogeneous strain is calculated by using the Landauer-Büttiker method. We show that the oscillation period of the conductance as a function of the magnetic flux depends on uniaxial strain and the conductance sharply drops along the direction of graphene stretching. The conductance amplitude, on the other hand, can be manipulated by induced pseud…
Negative differential conductance (NDC), characterized by the decreasing current with increasing voltage, has attracted continuous attention for its various novel applications. The NDC typically exists in a certain range of bias voltages for a selected system and controlling the regions of NDC in curves of current versus voltage (I-V) is experimentally challenging. Here, we demonstrate an unusual magnetic-field-controlled NDC in graphene npn junction resonators. The magnetic field not only can switch on and off the NDC, but also can continuously tune the regions of the NDC in the I-V curves. I…
We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap--a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realise p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the structures is calculated taking into account the specifics of the graphene density of states and is used to find the resistance of the p-n junctions expected for chiral carriers. We show that ballistic p-n junctions have larger resistance than diffusive ones. This is caused by suppre…
Graphene has been proposed for use in various nanodevice designs, many of which harness emergent quantum properties for device functionality. However, visualization, measurement, and manipulation become non-trivial at nanometer and atomic scales, representing a significant challenge for device fabrication, characterization, and optimization at length scales where quantum effects emerge. Here, we present proof of principle results at the crossroads between 2D nanoelectronic devices, e-beam-induced modulation, and imaging with secondary electron e-beam induced currents (SEEBIC). We introduce a d…
We investigate the size scaling of the conductance of surface disordered graphene sheets of width W and length L. Metallic leads are attached to the sample ends across its width. At E ~ 0, the conductance scales with the system size as follows: i) For constant W/L, it remains constant as size is increased, at a value which depends almost lineally on that ratio; this scaling allows the definition of a conductivity value that results similar to the experimental one. ii) For fixed width, the conductance decreases exponentially with length L, both for ordered and disordered samples. Disorder reduc…
We study the contact resistance and the transfer characteristics of back-gated field effect transistors of mono- and bi-layer graphene. We measure specific contact resistivity of ~7kohm*um2 and ~30kohm*um2 for Ni and Ti, respectively. We show that the contact resistance is a significant contributor to the total source-to-drain resistance and it is modulated by the back-gate voltage. We measure transfer characteristics showing double dip feature that we explain as the effect of doping due to charge transfer from the contacts causing minimum density of states for graphene under the contacts and …
The spin dependent charge transport in zigzag graphene nanoribbons (ZGNRs) has been investigated by the nonequilibrium Green's function method combined with the density functional theory at the local spin density approximation. The current versus voltage curve shows distinguished behaviors for symmetric and asymmetric ZGNRs and the doping on the ZGNR edges can manipulate the spin transport. In special cases that a Be atom is substitutionally doped on one edge of the symmetric ZGNRs, one spin current shows negative differential resistance while the other increases monotonically with the bias. T…
We study ballistic transport properties of graphene with a low concentration of vacancies or adatoms. The conductance of graphene doped to the Dirac point is found to depend on the relative distribution of impurities among different sites of the honeycomb lattice labeled in general by six colors. The conductivity is shown to be sensitive to the crystal orientation if adatom sites have a preferred color. Our theory is confirmed by numerical simulations using recursive Green's functions with no adjustable parameters.
We measured the conductance fluctuation of bi- and trilayer graphene devices prepared on mechanical exfoliated graphene by an all-dry, lithography-free process using an ultrathin quartz filament as a shadow mask. Reproducible fluctuations in conductance as a function of applied gate voltage or magnetic field were found. As the gate voltage was tuned so that the graphene device was pushed to the charge neutral point, the amplitude of the conductance fluctuation was found to be suppressed quickly from a value consistent with universal conductance fluctuation when the devices were still well with…
We study numerically the effects of edge and bulk disorder on the conductance of graphene nanoribbons. We compute the conductance suppression due to localization induced by edge scattering. We find that even for weak edge roughness, conductance steps are suppressed and transport gaps appear. These gaps are approximately inversely proportional to the nanoribbon width. On/off conductance ratios grow exponentially with the nanoribbon length. Our results impose severe limitations to the use of graphene in ballistic nanowires.
We report on a first-principles study of the conductance through graphene suspended between Al contacts as a function of junction length, width, and orientation. The charge transfer at the leads and into the freestanding section gives rise to an electron-hole asymmetry in the conductance and in sufficiently long junctions induces two conductance minima at the energies of the Dirac points for suspended and clamped regions, respectively. We obtain the potential profile along a junction caused by doping and provide parameters for effective model calculations of the junction conductance with weakl…
Electrical properties of multi-layer graphene are subject to variations due to random interlayer alignments. In this work we reported graphene interlayer conductance without special layer aligning. Ohmic contacts between two graphene layers are observed with resistance variations of more than one order. With Raman spectroscopy we identify that the lattice angle between twisted graphene layers is the key variation source. The angular dependence and temperature dependence of the interlayer conductance suggest that a phonon assistant tunneling mechanism is valid for the interlayer transport of gr…
The honeycomb lattice of graphene is a unique two-dimensional (2D) system where the quantum mechanics of electrons is equivalent to that of relativistic Dirac fermions. Novel nanometer-scale behavior in this material, including electronic scattering, spin-based phenomena, and collective excitations, is predicted to be sensitive to charge carrier density. In order to probe local, carrier-density dependent properties in graphene we have performed atomically-resolved scanning tunneling spectroscopy measurements on mechanically cleaved graphene flake devices equipped with tunable back-gate electro…
We present numerical studies of conduction in graphene nanoribbons with different types of disorder. We find that even when defect scattering depresses the conductance to values two orders of magnitude lower than 2e^2/h, equally spaced conductance plateaus occur at moderately low temperatures due to enhanced electron backscattering near subband edge energies if bulk vacancies are present in the ribbon. This work accounts quantitatively for the surprising conductance quantization observed by Lin et al. [Phys. Rev. B 78, 161409 (2008)] in ribbons with such low conductances.
Within the Landauer transport formalism we demonstrate that conductance zeroes are possible in bipartite systems at half-filling when leads are contacted to different sublattice sites. In particular, we investigate the application of this theory to graphene quantum dots with leads in the armchair configuration. The obtained conductance cancellation is robust in the presence of any single-site impurity.
We study the electronic transport in a graphene-based superconductor-normal(graphene)-superconductor (SNS) junction by use of the Dirac-Bogoliubov-de Gennes equation. We consider the properties of tunneling conductance through an undoped strip of graphene with heavily doped superconducting electrodes in the dirty limit. We find that spectrum of Andreev bound states are modified in the presence of single localized defect in the bulk. The minimum tunneling conductance remains the same and this result doesn't depend on the actual location of the imperfection.
Explicit expressions of the band spectrum near the neutrality point for armchair and zigzag graphene ribbons and carbon nanotubes were derived based on a tight-binding macromolecule model of graphene. The obtained dispersion relations are used to determine and compare the conductance ladders of these structures and are beneficial for many other applications. Our results are different in many respects from previously reported data. This new information forms a solid reliable basis for evaluation of the potential of graphene nanoelectronic devices.
The relationship between the universal conductance fluctuation and the weak localization effect in monolayer graphene is investigated. By comparing experimental results with the predictions of the weak localization theory for graphene, we find that the ratio of the elastic intervalley scattering time to the inelastic dephasing time varies in accordance with the conductance fluctuation; this is a clear evidence connecting the universal conductance fluctuation with the weak localization effect. We also find a series of scattering lengths that are related to the phase shifts caused by magnetic fl…
We solve the Dirac equation, which describes charge massless chiral relativistic carriers in a two-dimensional graphene. We have identified and analysed a novel pseudospin-dependent scattering effect. We compute the tunneling conductance and generalize the analytical result in the presence of the tunable atomic potential of a graphene strip. The absence of back scattering in graphene is shown to be due to Berry's phase which corresponds to a sign change of the wave function under a spin rotation of a particle. We use the transfer matrix approach and find that the electric conductance of doped …
Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped samples to be distinguished, including N-shaped distortions of quantum Hall plateaus and conductance peaks and dips at the charge neutrality point. Generally good agreement is found between measurement and theory. Possible origins of discrepancies are discussed.
Feedback-controlled electric breakdown of graphene in air or vacuum is a well-established way of fabricating tunnel junctions, nanogaps, and quantum dots. We show that the method is equally applicable to encapsulated graphene constrictions fabricated using hydrogen silsesquioxane. The silica-like layer left by hydrogen silsesquioxane resist after electron-beam exposure remains intact after electric breakdown of the graphene. We explore the conductance switching behavior that is common in graphene nanostructures fabricated via feedback-controlled breakdown, and show that it can be attributed to…
In graphene, the valleys represent spin-like quantities and can act as a physical resource in valley-based electronics to novel quantum computation schemes. Here we demonstrate a direct route to tune and read the valley quantum states of disordered graphene by measuring the mesoscopic conductance fluctuations. We show that the conductance fluctuations in graphene at low temperatures are reduced by a factor of four when valley triplet states are gapped in the presence of short range potential scatterers at high carrier densities. We also show that this implies a gate tunable universal symmetry …
Graphene pn junction is the brick to build up variety of graphene nano-structures. The analytical formula of the conductance of graphene gradual pn junctions in the whole bipolar region has been absent up to now. In this paper, we analytically calculated that pn conductance with the spin-orbit coupling and stagger potential taken into account. Our analytical expression indicates that the energy gap causes the conductance to drop a constant value with respect to that without gap in a certain parameter region, and manifests that the curve of the conductance versus the stagger potential consists …
We study the charge and spin transport in a two terminal graphene nanoribbon (GNR) decorated with random Gold (Au) adatoms using a Kane-Mele model. Two commonly used GNRs, that is, the armchair graphene nanoribbon (AGNR) and the zigzag graphene nanoribbon (ZGNR) are compared and contrasted, which shows that in presence of Au adatoms, a somewhat robust $2e^2/h$ conductance plateau occurs in the case of AGNR around the zero of the Fermi energy, while in ZGNR this plateau is fragile. We show that this flat plateau, having a conductance value $2e^2/h$, is not a hallmark signature of a topologicall…
We show that for graphene with any finite difference in the on-site energy between the two sub-lattices ($Δ$), The optical absorption edge is determined by the $Δ$. The universal conductance will be broken and the conductance near the band edge varies with frequency as $1/ω^2$. Moreover, we have identified another universal conductance for such systems without inversion symmetry, i.e., the onset conductance at the band edge is $% σ_c=2σ_0=πe^2/2h$, independent of the size of the band gap. The total integrated optical response is nearly conserved despite of the opening of the band gap.
The linear conductance spectrum of a metallic graphene junction formed by interconnecting two gapless graphene nanoribbons is calculated. A strong conductance suppression appears in the vicinity of the Dirac point. We found that such a conductance suppression arises from the antiresonance effect associated with the edge state localized at the zigzag-edged shoulder of the junction. The conductance valley due to the antiresonance is rather robust in the presence of the impurity and vacancy scattering. And the center of the conductance valley can be readily tuned by an electric field exerted on t…
We calculate the spin-dependent zero-bias conductance $G_{σσ'}$ in armchair graphene nanoribbons with hydrogen adsorbates employing a DFT-based ab initio transport formalism including spin-orbit interaction. We find that the spin-flip conductance $G_{σ\barσ}$ can reach the same order of magnitude as the spin-conserving one, $G_{σσ}$, due to exchange-mediated spin scattering. In contrast, the genuine spin-orbit interaction appears to play a secondary role, only.
In this paper we study in detail the effect of the rotational alignment between a hexagonal boron nitride (hBN) slab and the graphene layers in the vertical current of a a graphene-hBN-graphene device. We show how for small rotational angles, the transference of momentum by the hBN crystal lattice leads to multiple peaks in the I-V curve of the device, giving origin to multiple regions displaying negative differential conductance. We also study the effect of scattering by phonons in the vertical current an see how the opening up of inelastic tunneling events allowed by spontaneous emission of …
We present the results of million atom electronic quantum transport calculations for graphene nanoconstrictions with edges that are smooth apart from atomic scale steps. We find conductances quantized in integer multiples of 2e2/h and a plateau at ~0.5*2e2/h as in recent experiments [Tombros et al., Nature Physics 7, 697 (2011)]. We demonstrate that, surprisingly, conductances quantized in integer multiples of 2e2/h occur even for strongly non-adiabatic electron backscattering at the stepped edges that lowers the conductance by one or more conductance quanta below the adiabatic value. We also …
The contact conductance between graphene and two quantum wires which serve as the leads to connect graphene and electron reservoirs is theoretically studied. Our investigation indicates that the contact conductance depends sensitively on the graphene-lead coupling configuration. When each quantum wire couples solely to one carbon atom, the contact conductance vanishes at the Dirac point if the two carbon atoms coupling to the two leads belong to the same sublattice of graphene. We find that such a feature arises from the chirality of the Dirac electron in graphene. Such a chirality associated …
Graphene is a promising candidate for building fast and ultra-sensitive bolometric detectors due to its weak electron-phonon coupling and low heat capacity. In order to realize a practical graphene-based bolometer, several important issues, including the nature of radiation response, coupling efficiency to the radiation and the thermal conductance need to be carefully studied. Addressing these issues, we present graphene-superconductor junctions as a viable option to achieve efficient and sensitive bolometers, with the superconductor contacts serving as hot electron barriers. For a graphene-su…
We consider electron waveguides (quantum wires) in graphene created by suitable inhomogeneous magnetic fields. The properties of uni-directional snake states are discussed. For a certain magnetic field profile, two spatially separated counter-propagating snake states are formed, leading to conductance quantization insensitive to backscattering by impurities or irregularities of the magnetic field.
Conductance fluctuations produced by the presence of disorder in zigzag and armchair graphene nanoribbons are studied. We show that quantum transport in zigzag nanoribbons takes place via edge states which are exponentially localized, as in the standard Anderson localization problem, whereas for armchair nanoribbons the symmetry of the graphene sublattices produces anomalous localization, or delocalization. We show that these two different electron localizations lead to significant differences of the conductance statistics between zigzag and armchair nanoribbons. In particular, armchair nanori…
Provided the electrical properties of electro-burnt graphene junctions can be understood and controlled, they have the potential to underpin the development of a wide range of future sub-10nm electrical devices. We examine both theoretically and experimentally the electrical conductance of electro-burnt graphene junctions at the last stages of nanogap formation. We account for the appearance of a counterintuitive increase in electrical conductance just before the gap forms. This is a manifestation of room-temperature quantum interference and arises from a combination of the semi-metallic band …
We investigate the impact of strained nanobubbles on the conductance characteristics of graphene nanoribbons using a combined molecular dynamics - tight-binding simulation scheme. We describe in detail how the conductance, density of states, and current density of zigzag or armchair graphene nanoribbons are modified by the presence of a nanobubble. In particular, we establish that low-energy electrons can be confined in the vicinity or within the nanobubbles by the delicate interplay between the pseudomagnetic field pattern created by the shape of the bubble, mode mixing, and substrate interac…
