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arXiv 0801.4125nucl-ex
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26 Si基态的精确half-life测量

Precise half-life measurement of the 26Si ground state

I. Matea, J. Souin, J. Aysto, B. Blank, P. Delahaye, V. -V. Elomaa, T. Eronen, J. Giovinazzo, U. Hager, J. Hakala, J. Huikari, A. Jokinen, A. Kankainen, I. D. M… 展开作者

I. Matea, J. Souin, J. Aysto, B. Blank, P. Delahaye, V. -V. Elomaa, T. Eronen, J. Giovinazzo, U. Hager, J. Hakala, J. Huikari, A. Jokinen, A. Kankainen, I. D. Moore, J. -L. Pedroza, S. Rahaman, J. Rissanen, J. Ronkainen, A. Saastamoinen, T. Sonoda, C. Weber

摘要:

26Si的β衰变半衰期测量的相对精度为1.4*10e3。该测量产生的值为2.2283(27)s,其与先前的测量结果很好地一致,但具有好4倍的精度。在同一实验中,我们还测量了非模拟分支比,并可以确定超允许的一个与以前报道的测量精度相似。实验是在于韦斯屈莱大学的加速器实验室进行的,我们使用IGISOL技术和JYFLTRAP设备分离26 Si的纯样品。

英文摘要:

The beta-decay half-life of 26Si was measured with a relative precision of 1.4*10e3. The measurement yields a value of 2.2283(27) s which is in good agreement with previous measurements but has a precision that is better by a factor of 4. In the same experiment, we have also measured the non-analogue branching ratios and could determine the super-allowed one with a precision similar to the previously reported measurements. The experiment was done at the Accelerator Laboratory of the University of Jyvaskyla where we used the IGISOL technique with the JYFLTRAP facility to separate pure samples of 26Si.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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