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arXiv quant-ph/0609194quant-phcond-mat.mtrl-sci
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不同载流子密度样品Casimir力差异的证明

Demonstration of the difference Casimir force for samples with different charge carrier densities

F. Chen, G. L. Klimchitskaya, V. M. Mostepanenko, U. Mohideen

摘要:

用高真空原子力显微镜测量了不同载流子密度的两块硅板与镀金球之间的Casimir力。结果与Lifshitz理论相比较,符合得很好.我们的实验表明,通过改变半导体板的载流子密度几个数量级,可以改变Casimir相互作用.这一结果可能在纳米技术中找到应用。

英文摘要:

A measurement of the Casimir force between a gold coated sphere and two Si plates of different carrier densities is performed using a high vacuum based atomic force microscope. The results are compared with the Lifshitz theory and good agreement is found. Our experiment demonstrates that by changing the carrier density of the semiconductor plate by several orders of magnitude it is possible to modify the Casimir interaction. This result may find applications in nanotechnology.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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