arXiv 0705.13582007-05-09quant-ph

边界面光学性质变化引起Casimir力差异的实验研究

Experimental approaches to the difference in the Casimir force through the varying optical properties of boundary surface

R. Castillo-Garza, C. -C. Chang, D. Jimenez, G. L. Klimchitskaya, V. M. Mostepanenko, U. Mohideen

备注：: 23 pages of the text, 2 tables, and captions of 12 figures (to appear in Phys. Rev. A)
发表信息：: Phys.Rev.A75:062114,2007
DOI：: 10.1103/PhysRevA.75.062114

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摘要：

我们提出了两个新的实验测量的Casimir力之间的镀金球和半导体板具有显着不同的载流子密度。在这些实验的第一个图案化的硅板被使用，它由两个部分的不同的掺杂剂密度，并在水平方向上的球体下方振荡。本实验中的测量方案是差分的，即，可以分别用静态和动态技术直接高精度地测量图案化板的球体和截面之间的Casimir力的差或Au和图案化平行板之间的等效压力的差。第二个实验提出测量同一球体与VO ${}_2$膜之间的Casimir力，该VO膜随着温度的升高经历绝缘体-金属相变。我们报告的现状的干涉仪为基础的可变温度装置进行实验，并提出了第一个结果的校准和灵敏度。在实验配置的Casimir力和压力的大小计算使用不同的理论方法来描述的光学和导电性能的半导体在低频率的文献中提出的。它表明，建议的实验将有助于解决的理论问题中所产生的应用程序中的Lifshitz理论在非零温度的实际材料。它们还将为纳米技术带来新的机遇。

英文摘要：

We propose two novel experiments on the measurement of the Casimir force acting between a gold coated sphere and semiconductor plates with markedly different charge carrier densities. In the first of these experiments a patterned Si plate is used which consists of two sections of different dopant densities and oscillates in the horizontal direction below a sphere. The measurement scheme in this experiment is differential, i.e., allows the direct high-precision measurement of the difference of the Casimir forces between the sphere and sections of the patterned plate or the difference of the equivalent pressures between Au and patterned parallel plates with static and dynamic techniques, respectively. The second experiment proposes to measure the Casimir force between the same sphere and a VO${}_2$ film which undergoes the insulator-metal phase transition with the increase of temperature. We report the present status of the interferometer based variable temperature apparatus developed to perform both experiments and present the first results on the calibration and sensitivity. The magnitudes of the Casimir forces and pressures in the experimental configurations are calculated using different theoretical approaches to the description of optical and conductivity properties of semiconductors at low frequencies proposed in the literature. It is shown that the suggested experiments will aid in the resolution of theoretical problems arising in the application of the Lifshitz theory at nonzero temperature to real materials. They will also open new opportunities in nanotechnology.

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