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arXiv 0812.0557quant-ph
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基于Boltzmann输运方程计算半导体或本征半导体的Casimir力

Computation of Casimir forces for dielectrics or intrinsic semiconductors based on the Boltzmann transport equation

Diego A. R. Dalvit, Steve K. Lamoreaux

摘要:

在经典Boltzmann输运方程的背景下考虑漂移载流子和行进电磁波之间的相互作用,以计算具有小电荷载流子密度的介质(包括半导体和本征半导体)之间的Casimir-Lifshitz力。我们扩大后,我们以前的工作[物理。{ \bf 101},163203(2008)],并在一定程度上详细推导该理论中的频率相关反射振幅,并计算平行板配置的相应Casimir自由能。本文批判性地讨论了热力学能斯特定理在Casimir物理中的证明问题,并明确地证明了我们的理论满足该定理。最后,我们展示了如何漂移载流子的理论连接到以前的计算卡西米尔力使用空间色散的材料边界。

英文摘要:

The interaction between drifting carriers and traveling electromagnetic waves is considered within the context of the classical Boltzmann transport equation to compute the Casimir-Lifshitz force between media with small density of charge carriers, including dielectrics and intrinsic semiconductors. We expand upon our previous work [Phys. Rev. Lett. {\bf 101}, 163203 (2008)] and derive in some detail the frequency-dependent reflection amplitudes in this theory and compute the corresponding Casimir free energy for a parallel plate configuration. We critically discuss the the issue of verification of the Nernst theorem of thermodynamics in Casimir physics, and explicity show that our theory satisfies that theorem. Finally, we show how the theory of drifting carriers connects to previous computations of Casimir forces using spatial dispersion for the material boundaries.

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