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arXiv 0802.3729quant-ph
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晶体与半导体间热Casimir力理论中的问题

Problems in the theory of thermal Casimir force between dielectrics and semiconductors

G. L. Klimchitskaya, B. Geyer

摘要:

本文考虑应用Lifshitz理论来描述半导体与晶体之间的热Casimir力。它表明,对于所有的真π(即,对于在零温度下具有零电导率的所有材料),将在非零温度下产生的非零电导率包括到介电响应模型中导致违反能斯特热定理。这一结果同样适用于简单绝缘体、本征半导体、Mott-Hubbard半导体和掺杂浓度低于临界值的杂质半导体。我们证明,在绝缘体-金属过渡的Casimir自由能突然变化,无论电导率连续或不连续变化。应用Lifshitz公式对极坐标系进行计算,得到了与温度成线性关系的大的热修正。一个规则,制定了如何应用的Lifshitz理论,以实际材料符合热力学和实验。

英文摘要:

The application of the Lifshitz theory to describe the thermal Casimir force between dielectrics and semiconductors is considered. It is shown that for all true dielectrics (i.e., for all materials having zero conductivity at zero temperature) the inclusion of a nonzero conductivity arising at nonzero temperature into the model of dielectric response leads to the violation of the Nernst heat theorem. This result refers equally to simple insulators, intrinsic semiconductors, Mott-Hubbard dielectrics and doped semiconductors with doping concentration below a critical value. We demonstrate that in the insulator-metal transition the Casimir free energy changes abruptly irrespective of whether the conductivity changes continuously or discontinuously. The application of the Lifshitz formula to polar dielectrics results in large thermal correction that is linear in temperature. A rule is formulated on how to apply the Lifshitz theory to real materials in agreement with thermodynamics and experiment.

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