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arXiv 2403.09007quant-ph
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偏置半导体的Casimir排斥

Casimir repulsion with biased semiconductors

Benjamin Spreng, Calum Shelden, Tao Gong, Jeremy N. Munday

AI总结:

本研究探索了适度偏置半导体系统产生的强排斥性Casimir力,确定了偏置电压、带隙能量和间距的影响,并预测金球上的排斥力在实验精度范围内,为纳米尺度力控制提供了新途径。

摘要:

量子与热涨落是量子光学中众多现象的基础,包括通常存在于MEMS和NEMS器件中紧密间隔表面之间作用的Casimir效应。非热平衡系统在工程应用和利用这些力方面尤为前景广阔。近期,具有外部偏置的半导体被提出用于研究非平衡Casimir力。在此,我们探索包含适度偏置半导体的系统,该系统表现出强烈的排斥性Casimir力,并且我们确定了在实验可及的配置下偏置电压、半导体带隙能量和间距的影响。半导体发射的模式对近表面施加排斥力,在亚微米距离下克服了吸引性的平衡Casimir力贡献。对于两个平行平面的几何结构,这些模式经历Fabry-Pérot干涉,导致力表现出随间距变化的振荡行为。利用近邻力近似,我们预测施加在金球上的排斥力完全在典型Casimir力实验的精度范围内。我们的工作为在纳米和微米尺度控制力开辟了新的可能性,可应用于纳米技术中的传感和驱动。

英文摘要:

Quantum and thermal fluctuations are fundamental to a plethora of phenomena within quantum optics, including the Casimir effect that acts between closely separated surfaces typically found in MEMS and NEMS devices. Particularly promising for engineering and harnessing these forces are systems out of thermal equilibrium. Recently, semiconductors with external bias have been proposed to study the nonequilibrium Casimir force. Here, we explore systems involving moderately biased semiconductors that exhibit strong repulsive Casimir forces, and we determine the effects of bias voltage, semiconductor bandgap energy, and separation for experimentally accessible configurations. Modes emitted from the semiconductors exert a repulsive force on a near surface that overcomes the attractive equilibrium Casimir force contribution at submicron distances. For the geometry of two parallel planes, those modes undergo Fabry-Pérot interference resulting in an oscillatory force behavior as a function of separation. Utilizing the proximity-force approximation, we predict that the repulsive force exerted on a gold sphere is well within the accuracy of typical Casimir force experiments. Our work opens up new possibilities of controlling forces at the nano- and micrometer scale with applications in sensing and actuation in nanotechnology.

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