Marco Battaglia, Devis Contarato, Piero Giubilato, Leo Greiner, Lindsay Glesener, Benjamin Hooberman
This paper reports results on a detailed study of charge collection and signal-to-noise performance of CMOS monolithic pixel sensors before and after back-thinning and their application in a pixel beam telescope for the ALS 1.5 GeV $e^-$ beam test facility.
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The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a deplet…
An R&D program on monolithic CMOS pixel sensors for application at the ILC has been started at LBNL. This program profits of significant synergies with other R&D activities on CMOS pixel sensors. The project activities after the first semester of the R&D program are reviewed.
This paper reviews the development of CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors. MAPS are developed in a standard CMOS technology. In the imaging field, where the technology found its first applications, they are also known as CMOS Image Sensors. The use of MAPS as a detector for particle physics was first proposed at the end of 1999. Since then, their good performance in terms of spatial resolution, efficiency, radiation hardness have been demonstrated and work is now well under way to deliver the first MAPS-based vertex detectors.
This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25 MHz. This detector is developed in the framework of R&D for the Vertex Tracker for a future e+e- Linear Collider.
This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25 MHz. This detector is developed in the framework of R&D for the Vertex Tracker for the International Linear Collider.
Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototy…
The MuPix7 chip is a monolithic HV-CMOS pixel chip, thinned down to 50 μm. It provides continuous self-triggered, non-shuttered readout at rates up to 30 Mhits/chip of 3x3 mm^2 active area and a pixel size of 103x80 μm^2. The hit efficiency depends on the chosen working point. Settings with a power consumption of 300 mW/cm^2 allow for a hit efficiency >99.5%. A time resolution of 14.2 ns (Gaussian sigma) is achieved. Latest results from 2016 test beam campaigns are shown.
This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower materia…
High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on the 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process, features a fully integrated on-chip readout, i.e. hit-digitization, zero suppression and data serialization. It is the first fully monolithic HV-CMOS pixel sensor that has been tested for the use in high irradiation environments like HL-LHC. We present results from laboratory and test beam measurements of MuPix7 prototypes irradiated with neutrons (up to $5.0\c…
Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 k$Ω$ $cm^2$) wafers. The chip size is equivalent to that of the current ATLAS pixel detector readout chip. One of the prototypes is used for detailed characterization of the sensor and the analog readout of the DMAPS. The other is …
The CERN-RD50 CMOS working group develops the RD50-MPWseries of monolithic high-voltage CMOS pixel sensors for potential use in future high luminosity experiments such as the HL-LHC and FCC-hh. In this contribution, the design of the latest prototype in this series, RD50-MPW3, is presented. An overview of its pixel matrix and digital readout periphery is given, with discussion of the new structures implemented in the chip and the problems they aim to solve. The main analog and digital features of the sensor are already tested and initial laboratory characterisation of the chip is presented.
In this paper we present a novel, quadruple well process developed in a modern 0.18mu CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50mu pixel has over 150 PMOS and NMOS transistors. The sensor has been fabrica…
CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called self bias pixel. Moreover, we discuss radiation hardened sensor designs which allow operating detectors after exposing them to irradiation doses above 1 Mrad
CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is optimised for fast charge collection and high spatial resolution. The sensor was developed to target the requirements for the tracking detector of the proposed future Compact Linear Collider (CLIC). Most notably, a temporal resolution of a few nanoseconds and a spatial resolution below 7 microns are demanded. In this contribution, the sensor performance mea…
CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Being manufactured with cost efficient standard CMOS processes, CPS may integrate sensing elements together with analogue and digital data processing circuits into one monolithic chip. This turns into $50~\rm μm$ thin sensors, which provide an outstanding typical spatial resolution of few $~\rm μm$ and a detection efficiency for minimum ionizing particles above $99.9\%$. The radiation tolerance of CPS was initially constrained by the limi…
High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in the development of depleted CMOS silicon detectors, which could achieve similar performances at lower cost of production and complexity. We present recent developments of this technology in the framework of the ATLAS CMOS demonstrator project. In particular, studies of two active sensors from LFoundry, CCPD_LF and LFCPIX, and the first fully monolithi…
Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology
本文研究了180 nm CMOS工艺下大规模DMAPS芯片TJ-Monopix2的串扰问题，通过实验室测量和阈值变化分析，评估其在高能物理实验中的高辐射环境下的性能表现。。
This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade for the High Luminosity Large Hadron Collider (HL-LHC). Implementing such a device in the detector module will result in a lower production cost and lower material budget compared to the presently used hybrid designs. In this paper the chip architecture will be described foll…
An upgrade of the ATLAS experiment for the High Luminosity phase of LHC is planned for 2024 and foresees the replacement of the present Inner Detector (ID) with a new Inner Tracker (ITk) completely made of silicon devices. Depleted active pixel sensors built with the High Voltage CMOS (HV-CMOS) technology are investigated as an option to cover large areas in the outermost layers of the pixel detector and are especially interesting for the development of monolithic devices which will reduce the production costs and the material budget with respect to the present hybrid assemblies. For this purp…
The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor featuring pixels of 30um x 37.5um and a small collection diode. The sensor is fabricated in a 180 nm CMOS imaging process, using two different pixel flavours: the first with a continuous n-type implant for full lateral depletion, and the second with a segmentation in the n-type implant for accelerated charge collection. Moreover, CLICTD features an innovative sub-pixel segmentation scheme that allows the digital footprint to be reduced while maintaining a small sub-pixel pitch. In this contribution, test-beam measurements for the …
The CLIC Tracker Detector (CLICTD) is a monolithic pixelated sensor chip produced in a $180$ nm imaging CMOS process built on a high-resistivity epitaxial layer. The chip, designed in the context of the CLIC tracking detector study, comprises a matrix of ${16\times128}$ elongated pixels, each measuring ${300\times30}$ $μ$m$^2$. To ensure prompt charge collection, every elongated pixel is segmented in eight sub-pixels, each containing a collection diode and a separate analog front-end. A simultaneous $8$-bit time measurement with $10$ ns time bins and $5$-bit energy measurement with programmabl…
Developing a Monolithic Silicon Sensor in a 65 nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors
本文介绍DESY Tangerine项目开发65 nm单片CMOS有源像素传感器，通过TCAD与蒙特卡罗仿真及测试芯片测量优化设计，以满足未来轻子对撞机顶点探测器对时间和空间分辨率的要求。
Characterization of the H2M Monolithic CMOS Sensor
H2M单片CMOS传感器通过改进工艺和设计，实现了高检测效率和低噪声性能，适用于高精度粒子探测应用。
First measurements with monolithic active pixel test structures produced in a 65 nm CMOS process
针对ALICE实验ITS3升级需求，研究人员用65 nm CMOS工艺制备三种测试传感器开展MLR1批次测试，验证了该工艺制备的晶圆级单片有源像素传感器在预期辐照水平下的带电粒子探测性能可行性。
Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when large areas to be covered and material budget are concerned. This is the case of the outermost pixel layers of the future ATLAS tracking detector for the HL-LHC. For experiments at hadron colliders, radiation hardness is a key requirement which is not fulfilled by standard CMOS sensor designs that collect charge by diffusion. This issue has been addressed by …
Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hardon Collider (HL-LHC). LF-Monopix was fabricated in the L…
The H2M Monolithic Active Pixel Sensor -- characterizing non-uniform in-pixel response in a 65 nm CMOS imaging technology
本文介绍采用TPSCo 65 nm ISC工艺设计的H2M MAPS测试芯片，验证其功能与噪声性能，并分析由n-well布局、较大像素间距及读出电路导致的非均匀像素内响应。
In this paper, we describe the development of monolithic pixel detectors by using a Silicon-on-Insulator (SOI) technology for X-ray and charged particle applications. The detectors are based on a 0.2 μm CMOS fully depleted SOI process (Lapis Semiconductor Co., Ltd). The SOI wafer consists of a thick high-resistivity substrate for sensing and a thin low resistivity Si layer for CMOS circuits. We developed the integration-type SOI pixel detector, INTPIX4 mainly for X-ray imaging; it is made of a Float Zone (FZ) or Czochralski (Cz) silicon wafer. Since 2005, Cz SOI detectors were used initially. …
High-density and scalable graphene Hall sensor arrays through monolithic CMOS integration
本文提出通过垂直连接石墨烯霍尔传感器与硅CMOS偏置和乘法电路实现高密度石墨烯霍尔传感器阵列，验证了单片集成的可行性，推动了磁传感技术的发展。
The planned luminosity increase at the Large Hadron Collider in the coming years has triggered interest in the use of the particles' time of arrival as additional information in specialized detectors to mitigate the impact of pile-up. The required time resolution is of the order of tens of picoseconds, with a spatial granularity of the order of 1 mm. A time measurement at this precision level will also be of interest beyond the LHC and beyond high energy particle physics. We present in this paper the first developments towards a radiation hard Depleted Monolithic Active Pixel Sensor (DMAPS), w…
In beam performances of the MIMOSIS-2.1 CMOS Monolithic Active Pixel Sensor
本文介绍用于CBM实验微顶点探测器的MIMOSIS-2.1 CMOS单片有源像素传感器原型，通过增加片上分组电路、改进模拟电源网络并首次采用50 μm外延层提升性能，并报告其在CERN-SPS束流测试中的表现。
Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams are used to study the charge-collection properties and the performance of devices with different thicknesses both for perpendicular and inclined particle incidence. In CMOS sensors with a high-resistivi…
CMOS Monolithic Active Pixel Sensors (MAPS) were chosen as sensor technology for the vertex detectors of STAR, CBM and the upgraded ALICE-ITS. They also constitute a valuable option for tracking devices at future e+e- colliders. Those applications require a substantial tolerance to both, ionizing and non-ionizing radiation. To allow for a focused optimization of the radiation tolerance, prototypes are tested by irradiating the devices either with purely ionizing radiation (e.g. soft X-rays) or the most pure sources of non-ionizing radiation available (e.g. reactor neutrons). In the second case…
CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low analogue power consumption, while the monolithic design reduces the material budget, cost and production effort. However, the low electric field in the pixel corners of such sensors results in an increased charge collection time, that makes a fully efficient operation after irradiation and a timing resolution in the order of nanoseconds challenging for pixel …
We report on the experimental study made on a successive prototype of High-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detector application, developed with 180 nm feature size. These sensors are to qualify mainly the peripheral data processing blocks (e.g. Command Decoder, Trigger Buffer, etc.). It is a smaller version of 24 X 36 pixelated sensor in comparison to the earlier generation of ATLASPix1 fabricated in both ams AG, Austria, and TSI Semiconductors, USA. While ams produced ATLASPix2 showed breakdown voltage 50 V in nonirradiated condition as it was seen on its predecessors…
Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 k$Ω\,$cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 k$Ω\,$cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, di…
First results of a Monolithic Active Pixel Sensor with Internal Signal Gain Fully Integrated in a 180 nm CMOS Technology
CASSIA传感器利用180nm CMOS工艺实现内部信号放大，首次展示其在低增益和高增益模式下的性能
- Paper withdrawn by the author - CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications in terms of tolerance to non-ionizing radiation, it is being tried to deplete the sensitive volume of the, traditionally non-depleted, silicon sensors. We study the feasibility of this approach for the common case that the collection diodes of the pixel are small as compared to the pixel pitch. An analytic equation predicting the thickness of the depletion de…
Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation toleran…
Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from charac…
Radiation Hardness of MALTA2 Monolithic CMOS Sensors on Czochralski Substrates
本研究介绍了采用高阻厚直拉硅衬底的MALTA2 DMAPS传感器原型，通过工艺与前端改进实现低功耗等特性，并经CERN SPS试验束验证其在高辐照剂量下的辐射硬度。
We present results of a study of charged particle track and vertex reconstruction with a beam telescope made of four layers of 50 micron-thin CMOS monolithic pixel sensors using the 120 GeV protons at the FNAL Meson Test Beam Facility. We compare our results to the performance requirements of a future e+e- linear collider in terms of particle track extrapolation and vertex reconstruction accuracies.
Collider detectors have taken advantage of the resolution and accuracy of silicon detectors for at least four decades. Future colliders will need large areas of silicon sensors for low mass trackers and sampling calorimetry. Monolithic Active Pixel Sensors (MAPS), in which Si diodes and readout circuitry are combined in the same pixels, and can be fabricated in some of standard CMOS processes, are a promising technology for high-granularity and light detectors. In this paper we review 1) the requirements on MAPS for trackers and electromagnetic calorimeters (ECal) at future colliders experimen…
Test-beam results from MiniCACTUS-v2: A depleted monolithic CMOS timing sensor prototype
MiniCACTUS-v2原型在测试束实验中实现了0.5毫米×0.5毫米像素48.88皮秒的时间分辨率，展示了高精度的单粒子时间标记能力。
MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate
本文介绍了为ATLAS ITk升级研发的抗辐射全尺寸单片CMOS传感器MALTA-Cz，通过优化工艺与特殊注入设计在高阻直拉法衬底上实现小电极制造，在$2\ imes10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$辐照后仍保持优异探测效率，时间分辨率达2 ns。
MiniCACTUS: A 65 ps Time Resolution Depleted Monolithic CMOS Sensor
MiniCACTUS是一种基于150 nm CMOS工艺设计的耗尽型单片传感器原型，旨在用于未来高能物理实验的大规模定时探测器。该传感器通过优化保护环实现高压偏置和快速电荷收集，并在CERN SPS测试束实验中利用片上前端和判别器测量到65.3 ps的时间分辨率。
The paper presents the simulation studies of 10 $μ$m pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost-effective solution for particle tracking and timing applications. The Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) described in this work, which are developed within the framework of the ARCADIA project, are compliant with commercial CMOS fabrication processes. A TCAD simulation campaign was performed in the perspective of an upcoming engineering production run with the aim of designing FD-MAMS, stu…
Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process
该研究表征了65 nm CMOS工艺制造的模拟单片有源像素传感器测试结构，通过多种变体及辐照测试验证了其用于高能物理粒子探测的可行性，并为未来优化提供参考。
The Pixel 2010 conference focused on semiconductor pixel detectors for particle tracking/vertexing as well as for imaging, in particular for synchrotron light sources and XFELs. The big LHC hybrid pixel detectors have impressively started showing their capabilities. X-ray imaging detectors, also using the hybrid pixel technology, have greatly advanced the experimental possibilities for diiffraction experiments. Monolithic or semi-monolithic devices like CMOS active pixels and DEPFET pixels have now reached a state such that complete vertex detectors for RHIC and superKEKB are being built with …
Upgrade of the Belle II Vertex Detector with Depleted Monolithic CMOS Active Pixel Sensors
Belle II实验为应对更高的亮度，计划升级顶点探测器，采用耗尽单片主动像素传感器，设计高辐射容忍度和低功耗性能。
Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 MRad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictions of simulation and to 1.5 GeV electron data to disentagle the effect of multiple scattering. The point spread function measured with 300 keV electrons is (8.1 +/- 1.6) micron for 10 micron pixel and (…
Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles
本文提出一种技术无关的CMOS像素传感器模拟方法，结合TCAD通用掺杂分布电场模拟与Allpix Squared蒙特卡罗框架，无需专有工艺信息即可优化传感器设计，并通过测试束数据验证偏差不超过4%。
A Novel Approach for Fault Detection and Failure Analysis of CMOS Copper Metal Stacks
本文研究了在ITS3升级中为ALICE实验制造大尺寸单片主动像素传感器的工艺问题，通过分析MOSS传感器的良率，探讨了铜金属堆叠的故障特征及改进策略。
Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched in the buried oxide, allowing pixel implanting and reverse biasing. This paper summarizes the performances achieved with a first prototype manufactured in the OKI 0.15 micrometer FD-SOI process, featuri…
This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 micron SOI process, features both analog and digital pixels on a 10 micron pit…
Characterization of CMOS sensor using X-ray irradiation
本文针对未来高亮度对撞机实验需求，对新型单片像素探测器MALTA开展X射线辐照与电学表征研究，并通过不同厚度传感器的DAC对比分析揭示辐射影响与性能优化方向。
First results on monolithic CMOS detector with internal gain
本文报道了单片CMOS探测器内部增益的初步测试结果，展示了其在高能物理实验中的应用潜力。
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $μ$m) in which charge is collected on an electrode, albeit by disordered and slow diffusion rather than by drift in a directed electric field. As a consequence, the signal is small ($\approx$ 1000 e$^-$) and the radiation tolerance is much below the LHC requirements by factors of 100 to 1000. In this paper we present the development of a fully Depleted Monolithic Active Pixel Sensors (DMAPS) based on a high resistivity substrate allowing th…
Within the EUDET consortium a high resolution pixel beam telescope is being developed. The telescope consists of up to six planes of monolithic active pixel sensors. A flexible data acquisition environment is available for the telescope and the system is equipped with all the required infrastructure. Since the first installation of a demonstrator telescope in 2007, it has been extensively tested and used by various detector R&D groups. The results of test beam measurements are described here, demonstrating the telescope performance.
Development of CMOS LGAD sensors for the ALICE~3 Time of Flight detector
本文提出了一种基于CMOS工艺的低增益avalanche二极管传感器，用于ALICE 3实验的时间of flight探测器，实现了高空间分辨率和低材料预算。
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