CACTUS: A depleted monolithic active timing sensor using a CMOS radiation hard technology
Yavuz Degerli, Fabrice Guilloux, Claude Guyot, Jean-Pierre Meyer, Ahmimed Ouraou, Philippe Schwemling, Artur Apresyan, Ryan E. Heller, Mohd Meraj, Christian Pen… 展开作者
Yavuz Degerli, Fabrice Guilloux, Claude Guyot, Jean-Pierre Meyer, Ahmimed Ouraou, Philippe Schwemling, Artur Apresyan, Ryan E. Heller, Mohd Meraj, Christian Pena, Si Xie, Tomasz Hemperek
The planned luminosity increase at the Large Hadron Collider in the coming years has triggered interest in the use of the particles' time of arrival as additional information in specialized detectors to mitigate the impact of pile-up. The required time resolution is of the order of tens of picoseconds, with a spatial granularity of the order of 1 mm. A time measurement at this precision level will also be of interest beyond the LHC and beyond high energy particle physics. We present in this paper the first developments towards a radiation hard Depleted Monolithic Active Pixel Sensor (DMAPS), with high-resolution time measurement capability. The technology chosen is a standard high voltage CMOS process, in conjunction with a high resistivity detector material, which has already proven to efficiently detect particles in tracking applications after several hundred of Mrad of irradiation.
This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade for the High Luminosity Large Hadron Collider (HL-LHC). Implementing such a device in the detector module will result in a lower production cost and lower material budget compared to the presently used hybrid designs. In this paper the chip architecture will be described foll…
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $μ$m) in which charge is collected on an electrode, albeit by disordered and slow diffusion rather than by drift in a directed electric field. As a consequence, the signal is small ($\approx$ 1000 e$^-$) and the radiation tolerance is much below the LHC requirements by factors of 100 to 1000. In this paper we present the development of a fully Depleted Monolithic Active Pixel Sensors (DMAPS) based on a high resistivity substrate allowing th…
This letter presents the design of a monolithic pixel sensor with 10x10 micron^2 pixels in OKI 0.15 micron fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV electron beam at the LBNL ALS.
The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a deplet…
Charge collection parameterization of MALTA2, a depleted monolithic active pixel sensor
Humboldt University of Berlin（柏林洪堡大学）；Indian Institute of Technology Madras（马德拉斯印度理工学院）；University of Oxford（牛津大学）；University of Glasgow（格拉斯哥大学）；Stony Brook University（石溪大学）；CERN（欧洲核子研究中心）；Ankara University（安卡拉大学）；Los Alamos National Laboratory（洛斯阿拉莫斯国家实验室）；University of Birmingham（伯明翰大学）
本文提出了一种快速模拟方法，用于 depleted monolithic active pixel sensor，通过数据驱动的电荷收集和传播参数化，为无法获取工艺细节的传感器提供高效替代方案，实现了高精度的像素效率模拟。
An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate eff…
The paper presents the simulation studies of 10 $μ$m pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost-effective solution for particle tracking and timing applications. The Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) described in this work, which are developed within the framework of the ARCADIA project, are compliant with commercial CMOS fabrication processes. A TCAD simulation campaign was performed in the perspective of an upcoming engineering production run with the aim of designing FD-MAMS, stu…
Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototy…
This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower materia…
Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 k$Ω$ $cm^2$) wafers. The chip size is equivalent to that of the current ATLAS pixel detector readout chip. One of the prototypes is used for detailed characterization of the sensor and the analog readout of the DMAPS. The other is …
TCAD + Allpi$\text{x}^2$ Simulation study of MALTA2, a Depleted Monolithic Active Pixel Sensor for future tracking
University of Birmingham（伯明翰大学）；CERN（欧洲核子研究中心）；Indian Institute Technology Madras（马德拉斯印度理工学院）；University of Oxford（牛津大学）；University of Glasgow（格拉斯哥大学）；Stony Brook University（石溪大学）；High Energy Accelerator Research Organization（高能加速器研究机构）；Ankara University（安卡拉大学）；Los Alamos National Laboratory（洛斯阿拉莫斯国家实验室）
本研究结合 TCAD 和 Allpi$\text{x}^2$ 的混合仿真框架，通过优化 N 型覆盖层掺杂浓度并利用掠射角方法，实现了对 MALTA2 传感器性能的准确模拟，活性深度与测量值偏差仅 2%。
CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Being manufactured with cost efficient standard CMOS processes, CPS may integrate sensing elements together with analogue and digital data processing circuits into one monolithic chip. This turns into $50~\rm μm$ thin sensors, which provide an outstanding typical spatial resolution of few $~\rm μm$ and a detection efficiency for minimum ionizing particles above $99.9\%$. The radiation tolerance of CPS was initially constrained by the limi…
Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 k$Ω\,$cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 k$Ω\,$cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, di…
An upgrade of the ATLAS experiment for the High Luminosity phase of LHC is planned for 2024 and foresees the replacement of the present Inner Detector (ID) with a new Inner Tracker (ITk) completely made of silicon devices. Depleted active pixel sensors built with the High Voltage CMOS (HV-CMOS) technology are investigated as an option to cover large areas in the outermost layers of the pixel detector and are especially interesting for the development of monolithic devices which will reduce the production costs and the material budget with respect to the present hybrid assemblies. For this purp…
Development for the Belle II vertex detector upgrade with depleted monolithic active pixel sensors
Austrian Academy of Sciences（奥地利科学院）；University of Bergamo（贝加莫大学）；University of Pavia（帕维亚大学）；CPPM（马赛粒子物理中心）；Université Paris-Saclay（巴黎萨克雷大学）；University of Applied Sciences and Arts Dortmund（多特蒙德应用科学与艺术大学）；High Energy Accelerator Research Organization (KEK)（高能加速器研究机构（KEK））；The Graduate University for Advanced Studies (SOKENDAI)（综合研究大学院大学（SOKENDAI））；University of Tokyo（东京大学）；Instituto de Fisica Corpuscular (IFIC), CSIC-UV（核物理研究所（IFIC），西班牙国家研究委员会-瓦伦西亚大学）；Queen Mary University of London（伦敦大学玛丽女王学院）；Jilin University（吉林大学）
High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in the development of depleted CMOS silicon detectors, which could achieve similar performances at lower cost of production and complexity. We present recent developments of this technology in the framework of the ATLAS CMOS demonstrator project. In particular, studies of two active sensors from LFoundry, CCPD_LF and LFCPIX, and the first fully monolithi…
Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when large areas to be covered and material budget are concerned. This is the case of the outermost pixel layers of the future ATLAS tracking detector for the HL-LHC. For experiments at hadron colliders, radiation hardness is a key requirement which is not fulfilled by standard CMOS sensor designs that collect charge by diffusion. This issue has been addressed by …
Upgrade of the Belle II Vertex Detector with Depleted Monolithic CMOS Active Pixel Sensors
Marietta Blau Institute for Particle Physics, Austrian Academy of Sciences（玛丽亚·布劳粒子物理研究所，奥地利科学院）；Department of Engineering and Applied Sciences, University of Bergamo（贝加莫大学工程与应用科学学院）；Department of Electrical, Computer and Biomedical Engineering, University of Pavia（帕维亚大学电气、计算机和生物医学工程系）；Dipartimento di Fisica “E. Fermi”, Università di Pisa（比萨大学“E. 费米”物理系）；INFN Sezione di Pisa（意大利国家核物理研究所比萨分部）；Aix Marseille Univ, CNRS IN2P3, CPPM（艾克斯-马赛大学，法国国家科学研究中心，法国国家核物理与粒子物理研究所，普罗旺斯粒子物理中心）；Laboratoire de Physique des 2 infinis Irène Joliot-Curie – IJCLab, Université Paris-Saclay, CNRS IN2P3（巴黎-萨克雷大学，法国国家科学研究中心，法国国家核物理与粒子物理研究所，伊雷娜·约里奥-居里双无限物理实验室）；Université de Strasbourg, CNRS, IPHC UMR 7178（斯特拉斯堡大学，法国国家科学研究中心，高能物理研究所）；Physikalisches Institut, Rheinische（莱茵（威斯特法伦）联邦工业大学物理学院）
Belle II实验为应对更高的亮度，计划升级顶点探测器，采用耗尽单片主动像素传感器，设计高辐射容忍度和低功耗性能。
In this paper, we describe the development of monolithic pixel detectors by using a Silicon-on-Insulator (SOI) technology for X-ray and charged particle applications. The detectors are based on a 0.2 μm CMOS fully depleted SOI process (Lapis Semiconductor Co., Ltd). The SOI wafer consists of a thick high-resistivity substrate for sensing and a thin low resistivity Si layer for CMOS circuits. We developed the integration-type SOI pixel detector, INTPIX4 mainly for X-ray imaging; it is made of a Float Zone (FZ) or Czochralski (Cz) silicon wafer. Since 2005, Cz SOI detectors were used initially. …
This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 micron SOI process, features both analog and digital pixels on a 10 micron pit…
Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from charac…
The experiment of the future electron-positron colliders has unprecedented requirements on the vertex resolution, such as around 3micron single point resolution for the inner most detector layer, with fast readout, and very low power-consumption density and material budget. Significant efforts have been put into the development of monolithic silicon pixel sensors, but there have been some challenges to combine all those stringent specifications in a small pixel area. This paper presents a compact prototype pixel sensor fabricated in LAPIS 200nm SOI process and focuses on the characterization o…
We have studied the effects of ionizing irradiation from a 60Co source and the effects of neutron irradiation on a Monolithic Active Pixel Sensor Chip(MIMOSA8). A previous report was devoted solely to the neutron-induced effects. We show that extended defects due to the neutron damage changes the distribution of the pixels pedestals. This is mainly due to the increase of the dark generation current due to the presence of deep traps in the depleted zones of the sensors. Alternatively, the exposure to ionizing irradiation increases the pedestals in a more homogeneous way, this coming from the ge…
Time-of-flight measurement is an important advancement in PET scanners to improve image reconstruction with a lower delivered radiation dose. This article describes the monolithic ASIC for the TT-PET project, a novel idea for a high-precision PET scanner for small animals. The chip uses a SiGe Bi-CMOS process for timing measurements, integrating a fully-depleted pixel matrix with a low-power BJT-based front-end per channel, integrated on the same 100 $μ m$ thick die. The target timing resolution is 30 ps RMS for electrons from the conversion of 511 keV photons. A novel synchronization scheme u…
The MALTA family of Depleted Monolithic Active Pixel Sensor (DMAPS) produced in Tower 180 nm CMOS technology targets radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness up to $2 \times 10^{15}~1~\text{MeV}~\text{n}_{eq}/\text{cm}^2$ and time resolution below 2 ns, with uniform charge collection efficiency across the Pixel of size $36.4 \times 36.4~μ\text{m}^2$ with a $3~μ\text{m}^2$ electrode size. The MALTA2 demonstrator produced in 2021 on high-resistivity epitaxial silicon and on Czochralski subs…
- Paper withdrawn by the author - CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications in terms of tolerance to non-ionizing radiation, it is being tried to deplete the sensitive volume of the, traditionally non-depleted, silicon sensors. We study the feasibility of this approach for the common case that the collection diodes of the pixel are small as compared to the pixel pitch. An analytic equation predicting the thickness of the depletion de…
Fully Depleted Monolithic Active Pixels (FD-MAPS) represent a state-of-the-art detector technology and profit from a low material budget and cost for high energy physics experiments and other fields of research like medical imaging and astro-particle physics. Compared to the MAPS currently in use, fully depleted pixel sensors have the advantage of charge collection by drift, which enables a fast and uniform response overall the pixel matrix. The functionality of these devices has been shown in previous proof-of-concept productions. In this article we describe the optimization of the test pixel…
To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation-hard, monolithic CMOS sensors. We have designed, manufactured and tested the MALTA series of sensors, which are DMAPS in the 180 nm TowerJazz CMOS imaging technology. MALTA have a pixel pitch well below current hybrid pixel detectors, high time resolution (< 2 ns) and excellent charge collection efficiency across pixel geometrie…
Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hardon Collider (HL-LHC). LF-Monopix was fabricated in the L…
TPA-TCT analysis of the RD50-MPW4 monolithic pixel particle detector
Universidad de Sevilla（塞维利亚大学）；CERN（欧洲核子研究组织）；NIKHEF（荷兰国家核子和亚原子物理研究所）；Marietta Blau Institute for Particle Physics of the Austrian Academy of Sciences（奥地利科学院玛丽埃塔·布劳粒子物理研究所）；Universidad Autónoma de Barcelona（巴塞罗那自治大学）；University of Liverpool（利物浦大学）；University of Bonn（波恩大学）
This paper contains a compilation of parameters influencing the charge collection process extracted from a comprehensive study of partially depleted Monolithic Active Pixel Sensors with small (<25 um$^2$) collection electrodes fabricated in the TowerJazz 180 nm CMOS process. These results gave guidance for the optimisation of the diode implemented in ALPIDE, the chip used in the second generation Inner Tracking System of ALICE, and serve as reference for future simulation studies of similar devices. The studied parameters include: reverse substrate bias, epitaxial layer thickness, charge colle…
Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation toleran…
We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3--40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achiev…
We are developing monolithic pixel sensors based on a 0.2 $μ$m fully-depleted Silicon-on-Insulator (SOI) technology for HEP experiment applications. The total ionizing dose (TID) effect is the major issue in the applications for hard radiation environments in HEP experiments. To compensate for TID damage, we have introduced a Double SOI structure which has a Middle Silicon layer (SOI2 layer) in addition. We studied the recovery from TID damage induced by $\mathrm{^{60}Co}~γ$'s and other characteristics of an Integration-type Double SOI sensor. The Double SOI sensor irradiated to 100 kGy showed…
The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. At a sensor bias voltage of 125 V, the detector provides full efficiency and average time resolution of 30, 25 and 17 ps in the overall pixel area for a power consumption of 0.4, 0.9 and 2.7 W/cm^2, respectively. In this first prototype the time re…
The future Electron-Ion Collider (EIC) will utilize a series of high-luminosity high-energy electron+proton ($e+p$) and electron+nucleus ($e+A$) collisions to explore the inner structure of nucleon and nucleus and the matter formation process. Heavy flavor hadron and jet measurements at the EIC will play an essential role in determining the nucleon/nucleus parton distribution function and heavy quark hadronization process in not well constrained kinematic regions. A high granularity and low material budget forward silicon tracker will enable precise forward heavy flavor measurements at the EIC…
We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithic device. Each pixel circuit contains a trigger output function, with which we can achieve a time resolution of $\lesssim 10~μ{\rm s}$. One of our key development items is improvement of the energy re…
The Miniaturized Detector for Application in Space (MIDAS) is a compact device with dimensions 5 x 5 x 1 cm3 which combines position sensitive Si detectors and a fast neutrons spectrometer. MIDAS is developed with purpose to act as a linear energy transfer (LET) spectrometer for the charged particles and measure dose and dose equivalent from both charged particles and neutrons. It is based on fully depleted monolithic active Si pixel sensors for the charged track and energy deposition measurements, while a plastic scintillator read out by a silicon photomultiplier is used to determine energy d…
LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows a design with large charge collection electrode where readout electronics are placed inside. Generally, this offers a homogeneous electrical field in the sensor and short drift distances. TJ-Monopix1 …
We are now developing new X-ray imaging system by using Silicon-On-Insulator (SOI) Pixel Detectors. The SOI detector is a monolithic radiation imaging detector based on a 0.2um FD-SOI CMOS process. Special additional process steps are also developed to create fully depleted sensing region of 50~500um thick. SOI detector has up to mega pixels, so development of high speed Data Acquisition (DAQ) system is very important in conducting experiments. We have developed readout board named SEABAS2 (Soi EvAluation BoArd with Sitcp 2) for SOI detector. The SEABAS2 board has 16 channels of 65 MSPS ADCs, …
Impact of front-end parameters of the ARCADIA MD3 on charged particle detection
University of Padova（帕多瓦大学）；Centro di Ateneo di Studi e Attività Spaziali CISAS "G. Colombo", University of Padova（帕多瓦大学 CISAS "G. Colombo" 大学中心空间研究与活动中心）；University of Cassino and Southern Lazio（卡西诺及南拉齐奥大学）；CERN（欧洲核子研究组织）；Fermi National Accelerator Laboratory（费米国家加速器实验室）；University of Florida（佛罗里达大学）；California Institute of Technology（加州理工学院）；A. I. Alikhanyan National Science Laboratory (Yerevan Physics Institute)（A.I.阿里汉尼扬国家科学实验室（埃里温物理研究所））；INFN TIFPA, and Department of Industrial Engineering, University of Trento（特伦托大学工业工程系与 INFN TIFPA）
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We developed fully depleted (D)MAPS pixel sensors employing a 150 nm CMOS technology and using a high resistivity substrate as well as a high biasing voltage. The development has been carried out in three subse…
We have been developing monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic universe and Cosmic Evolution). The mission is characterized by broadband (1-80 keV) X-ray imaging spectroscopy with high angular resolution ($<15$~arcsec), with which we can achieve about ten times higher sensitivity in comparison to the previous missions above 10~keV. Immediate readout of only those pixels hit by an X-ray is available by an event trigger ou…
