京都的事件驱动X射线天文学SOI像素传感器用于FORCE任务
Kyoto's Event-Driven X-ray Astronomy SOI pixel sensor for the FORCE mission
摘要：
我们一直在开发单片有源像素传感器，X射线天文SOI像素传感器，XRPIXs，基于绝缘体上硅（SOI）CMOS技术，作为未来日本任务的软X射线传感器，FORCE（聚焦相对论宇宙和宇宙演化）。该任务的特点是宽带（1-80 keV）X射线成像光谱与高角分辨率（$<15$ ~arcsec），与以前的任务相比，我们可以实现约10倍的灵敏度高于10 keV。通过在每个像素中实现的事件触发输出功能，可以立即读出仅被X射线击中的像素，时间分辨率高于$10~{\rm μsec}$（事件驱动读出模式）。它使我们能够进行快速定时观测，并通过采用反符合技术，减少了在5- 10 keV以上高X射线能带的非X射线背景的支配。在本文中，我们介绍了我们的最新结果的发展XRPIXs。(1)我们成功地开发了一种三面可对接的背面照明装置，其成像区域尺寸为21.9 mm $\times$ 13.8 mm，像素尺寸为$36~{\rm μm} \times 36~{\rm μm}$。在事件驱动读出模式下，器件的X射线通量达到0.57 kHz以上。(2)我们开发了一种使用双SOI结构的器件，并发现该结构通过抑制传感器和电路层之间的电容耦合干扰来提高事件驱动读出模式下的光谱性能。(3)我们还开发了一种新的设备配备了钉扎耗尽型二极管结构，并确认该结构减少了暗电流产生的传感器和SiO $_2$绝缘层之间的界面区域。在事件驱动读出模式下，该器件在6.4keV处的能量分辨率为216 eV（FWHM）。
英文摘要：
We have been developing monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic universe and Cosmic Evolution). The mission is characterized by broadband (1-80 keV) X-ray imaging spectroscopy with high angular resolution ($<15$~arcsec), with which we can achieve about ten times higher sensitivity in comparison to the previous missions above 10~keV. Immediate readout of only those pixels hit by an X-ray is available by an event trigger output function implemented in each pixel with the time resolution higher than $10~{\rm μsec}$ (Event-Driven readout mode). It allows us to do fast timing observation and also reduces non-X-ray background dominating at a high X-ray energy band above 5--10~keV by adopting an anti-coincidence technique. In this paper, we introduce our latest results from the developments of the XRPIXs. (1) We successfully developed a 3-side buttable back-side illumination device with an imaging area size of 21.9~mm$\times$13.8~mm and an pixel size of $36~{\rm μm} \times 36~{\rm μm}$. The X-ray throughput with the device reaches higher than 0.57~kHz in the Event-Driven readout mode. (2) We developed a device using the double SOI structure and found that the structure improves the spectral performance in the Event-Driven readout mode by suppressing the capacitive coupling interference between the sensor and circuit layers. (3) We also developed a new device equipped with the Pinned Depleted Diode structure and confirmed that the structure reduces the dark current generated at the interface region between the sensor and the SiO$_2$ insulator layers. The device shows an energy resolution of 216~eV in FWHM at 6.4~keV in the Event-Driven readout mode.
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