Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor
Macau University of Science and Technology（澳门科技大学）；Zhuhai MUST Science and Technology Research Institute（珠海澳门科技大学研究院）；School of Physics and Astronomy, Monash University（蒙纳士大学物理与天文学院）；Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University（南洋理工大学物理与数学科学学院物理与应用物理部）；Department of Materials Science & Engineering, Monash University（蒙纳士大学材料科学与工程系）；Faculty of Materials Science and Engineering, Kunming University of Science and Technology（昆明理工大学材料科学与工程学院）；Department of Electrical and Electronic Engineering, The University of Melbourne（墨尔本大学电气与电子工程系）；School of Science, RMIT University（皇家墨尔本理工大学理学院）；Princeton Plasma Physics Laboratory（普林斯顿等离子体物理实验室）；Bio21 Institute, The University of Melbourne（墨尔本大学生物21研究所）；Research School of Chemistry, Australian National University（澳大利亚国立大学化学研究学院）；Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University（上海大学物理系高温超导重点实验室）；Centre for Materials Science, School of Chemistry and Physics, Queensland University of Technology（昆士兰科技大学化学与物理学院材料科学中心）；Macao Institute of Materials Science and Engineering (MIMSE), Faculty of Innovation Engineering, Macau University of Science and Technology（澳门科技大学创新工程学院澳门材料科学与工程研究所）；School of Electrical and Electronic Engineering, Nanyang Technological University（南洋理工大学电气与电子工程学院）
Kaijian Xing, Zherui Yang, Weiyao Zhao, Yuefeng Yin, Huiping Han, Shanhu Wang, Shifan Wang, James Bullock, Alastair Stacey, James A. Belcourt, Sergey Rubanov, H… 展开作者
Kaijian Xing, Zherui Yang, Weiyao Zhao, Yuefeng Yin, Huiping Han, Shanhu Wang, Shifan Wang, James Bullock, Alastair Stacey, James A. Belcourt, Sergey Rubanov, Hang Yin, David A. Broadway, Jean-Philippe Tetienne, Xinmao Yin, Liang Wu, Dong-Chen Qi, Michael S. Fuhrer, Qingdong Ou, Xiao Renshaw Wang
The p-type transistor is an indispensable component of semiconductor technology, enabling complementary operation with n-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is highly desirable but challenging for p-type transistors due to limited semiconductors with reliable hole transport and their high activation energies. Here, we achieved a robust yet efficient p-type transistor by heterogeneously integrating an ultra-wide-bandgap semiconductor and a high-k dielectric layer through van der Waals integration. The p-type transistor employs a two-dimensional hole channel on hydrogenated diamond (bandgap 5.6 eV) combined with a high-k (30.5) SrTiO3 perovskite membrane. At room temperature, the transistor exhibits stable operation with a high on-current (~200 mA/mm), low subthreshold swing (70 mV/dec), high hole mobility (566 cm^2/Vs to 572 cm^2/Vs) and high on-off ratio (~10^9). Furthermore, tuning annealing temperature allows operation in either enhancement or depletion mode. The robust p-type transistor with high efficiency holds great potential for future power electronics, UV optoelectronics, and harsh-environment electronic applications.
High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures
由宽带隙半导体制成的场效应晶体管可以在高电压、温度和频率下以低能量损耗工作，并且在功率和高频电子器件中具有越来越重要的意义。然而，与n沟道晶体管的性能相比，p沟道晶体管的性能较差，这限制了具有集成n沟道和p沟道晶体管的节能互补电路的生产。氢封端金刚石的p型表面导电性为解决这个问题提供了巨大的潜力，但是通常被认为是产生导电性所必需的表面转移掺杂限制了由氢封端金刚石制成的晶体管的性能，因为它需要电离的表面受体的存在，这会导致空穴散射。在这里，我们报告的p沟道宽带隙异质结场效应晶体管的氢终止的金刚石沟道和六方氮化硼（$h$ -BN）栅极绝缘体组成的制造，而不依赖于表面转移掺杂。尽管其表面受体密度降低，但由于空穴迁移率最高（室温霍尔迁移率：$680$ cm $^2$ V $^{-1}$ s $^{-1}$），该晶体管在p沟道宽带隙晶体管中具有最低的薄层电阻（$1.4$ k $Ω$）和最大的导通电流（$1600$ $μ$ m mA mm $^{-1}$）。重要的是，该晶体管还表现出常关行为，具有超过$10^8$的高开/关比。这些特性适用于低损耗开关，并且可以根据标准传输和晶体管模型进行解释。这种制造金刚石晶体管的新方法为未来的宽带隙半导体电子铺平了道路。
Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene
Single crystal field-effect transistors based on an organic selenium-containing semiconductor
我们报道了基于二苯基苯并二硒（DPh-BDSe）的单晶场效应晶体管（FET）的制备和表征。这些有机场效应晶体管（OFFET）用作p沟道累积模式器件。在室温下，对于最好的器件，阈值电压小于-7V，并且载流子迁移率几乎与栅极偏压无关，范围从1 cm 2/Vs到1.5 cm 2/Vs，取决于源漏偏压。通过冷却到室温以下，迁移率略有增加，并且在280 K以下降低。
Compact and explicit physical model for lateral metal-oxide-semiconductor field-effect transistor with nanoelectromechanical system based resonant gate
Minimizing propagated density errors of atomic core-electron for simultaneously accurate bandgaps and lattice constants in closed-shell Copper semiconductors
Key Lab of advanced optoelectronic quantum architecture and measurement (MOE), and School of Interdisciplinary Science, Beijing Institute of Technology（北京理工大学光电量子架构与测量教育部重点实验室，交叉科学学院）；Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute（伦斯勒理工学院物理、应用物理和天文学系）
Stanford University（斯坦福大学）；Taiwan Semiconductor Manufacturing Company, Ltd.（台湾积体电路制造股份有限公司）；ETH Zürich（苏黎世联邦理工学院）；SLAC National Accelerator Laboratory（斯坦福直线加速器中心）；Institute of Metallurgy and Materials Science, Polish Academy of Sciences（波兰科学院冶金与材料科学研究所）
Anomalous conduction band fluctuation in silicon carbide metal-oxide-semiconductor structures revealed by electrical characterization of field effect transistors combined with self-consistent numerical calculations
Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors
本论文研究了N极性调制掺杂p-AlGaN/GAN超晶格的MOCVD生长及其电学性质。空穴层电荷密度和迁移率作为SL中的p型掺杂剂Mg的浓度和SL周期数的函数进行了研究。进行室温霍尔测量以确定空穴迁移率和薄层电荷密度。当空穴密度随着SL周期数的增加而增加时，空穴迁移率基本上不受影响，对于Mg调制掺杂为7.5e18 cm-3的N极性SL，在同时具有6.5e13 cm-2的高空穴密度时，空穴迁移率高达18 cm 2/Vs。对于可比较的均匀掺杂的Ga极性SL样品，测量到11 cm 2/Vs的迁移率。还报道了GAN/AlGaN材料系统的最低薄层电阻为5 kOhm/sq。测试结构的晶体管也被制造来研究这些SL结构的适用性，其中平面器件导致5 mA/mm的电流，并且FinFET结构导致超过100 mA/mm的电流。
