宽带隙半导体同质结二极管中空穴的超注入
Superinjection of holes in homojunction diodes based on wide-bandgap semiconductors
摘要：
电驱动光源在从指示和显示技术到高速数据通信和量子信息处理的广泛应用中是必不可少的。宽带隙半导体有望通过提供新型光源来推进固态照明。然而，这些装置的电泵浦仍然是一个具有挑战性的问题。许多宽带隙半导体材料，例如SiC、GAN、AlN、ZnS和Ga 2 O3，可以容易地掺杂为n型，但是它们的有效p型掺杂极其困难。由于受主的高激活能导致空穴的缺乏，极大地限制了宽带隙半导体器件的性能和实用性。在这里，我们研究了一种新的效果，它允许同质结半导体器件，如p-i-n二极管，以及以上的p型材料的掺杂所施加的限制。使用一个严格的数值方法，我们表明，注入的空穴的密度可以超过的p型注入层中的空穴的密度高达三个数量级，这使得显着克服掺杂问题的可能性。我们提出了一个清晰的物理解释，这种意想不到的功能，宽带隙半导体p-i-n二极管，并仔细检查它在4 H-SiC，3C-SiC，AlN和ZnS结构。预测的效应可以用来开发明亮的发光器件，特别是基于SiC，AlN，ZnO和其他宽带隙半导体中的色心的电驱动非经典光源。
英文摘要：
Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily doped n-type, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of acceptors greatly limits the performance and practical applicability of wide-bandgap semiconductor devices. Here, we study a novel effect which allows homojunction semiconductors devices, such as p-i-n diodes, to operate well above the limit imposed by doping of the p-type material. Using a rigorous numerical approach, we show that the density of injected holes can exceed the density of holes in the p-type injection layer by up to three orders of magnitude, which gives the possibility to significantly overcome the doping problem. We present a clear physical explanation of this unexpected feature of wide-bandgap semiconductor p-i-n diodes and closely examine it in 4H-SiC, 3C-SiC, AlN and ZnS structures. The predicted effect can be exploited to develop bright light emitting devices, especially electrically driven non-classical light sources based on color centers in SiC, AlN, ZnO and other wide-bandgap semiconductors.
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