低禁带半导体微夹杂热辐射的等离子体增强反射
Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions
摘要：
通过在绝缘电介质中以低体积分数包含高散射颗粒来增加反射率提供了一种有前途的方法来减少高温下的辐射热损失。在这里，我们研究等离子体激元共振驱动的增强散射的微夹杂物的低带隙半导体（InP，Si，Ge，PbS，InAs和Te）在绝缘复合材料，以定制其红外反射率，以最大限度地减少热损失从辐射转移。为此，我们计算的光谱特性的微复合材料使用Monte Carlo建模，并将它们与菲涅耳方程的结果进行比较。颗粒尺寸相关的米氏散射和吸收效率，和散射各向异性的作用进行了研究，以确定最佳的微夹杂物的大小和材料参数，最大限度地提高热辐射的反射率。对于含有Si和Ge微夹杂物的复合材料，我们在400 - 1600 °C的温度范围内对入射黑体辐射获得了57 - 65%的反射效率。此外，我们观察到宽带的反射光谱从等离子体共振，由于半导体带隙内的缺陷态产生的载流子。因此，我们的研究结果开辟了通过在绝缘介质中使用低带隙半导体微夹杂物来开发高效高温热绝缘体的可能性。
英文摘要：
Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tailor its infrared reflectance for minimizing thermal losses from radiative transfer. To this end, we compute the spectral properties of the microcomposites using Monte Carlo modeling and compare them with results from Fresnel equations. The role of particle size-dependent Mie scattering and absorption efficiencies, and, scattering anisotropy are studied to identify the optimal microinclusion size and material parameters for maximizing the reflectance of the thermal radiation. For composites with Si and Ge microinclusions we obtain reflectance efficiencies of 57 - 65% for the incident blackbody radiation from sources at temperatures in the range 400 - 1600 °C. Furthermore, we observe a broadbanding of the reflectance spectra from the plasmonic resonances due to charge carriers generated from defect states within the semiconductor bandgap. Our results thus open up the possibility of developing efficient high-temperature thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating dielectrics.
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