Identification of formation of amorphous Si phase in SiOxNy films produced by plasma enhanced chemical vapor deposition
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine（乌克兰国家科学院瓦·拉什卡廖夫半导体物理研究所）；Educational Scientific Institute of High Technologies, Taras Shevchenko National University of Kyiv（基辅塔拉斯舍甫琴科国立大学高等技术教育科学研究所）；National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”（乌克兰国立技术大学“伊戈尔·西科尔斯基基辅理工学院”）；Institute of Physics, National Academy of Sciences of Ukraine（乌克兰国家科学院物理研究所）
M. V. Voitovych, A. Sarikov, V. O. Yukhymchuk, V. V. Voitovych, M. O. Semenenko
通过结合拉曼散射和红外吸收光谱技术，研究了在等离子体增强化学气相沉积（PECVD）条件下，富含硅的Si oxynitride薄膜中非晶硅（a-Si）相形成特征。拉曼散射结果表明，在相对硅含量超过约0.4的阈值时，研究薄膜中存在a-Si相。a-Si的含量与薄膜中氢浓度相关，氢的存在通过特征的红外吸收带（约660 cm⁻¹对应Si-H弯曲振动，约1900-2400 cm⁻¹对应Si-H伸缩振动）被检测到。用于分析约600至1300 cm⁻¹范围内的红外吸收光谱的光谱解卷积方法被用来可靠地分离约660 cm⁻¹的红外带。该带被确定为研究Si oxynitride薄膜中非晶Si相的来源。这使得通过分析光谱的低波数部分进行红外光谱学成为识别Si-rich Si oxynitride薄膜相组成的有效方法。获得的结果有助于理解PECVD生长Si oxynitride薄膜相组成的规律，并对实际应用中控制薄膜性能具有实用性。
英文摘要：
Peculiarities of formation of inclusions of amorphous Si (a-Si) phase in Si-rich Si oxynitride films grown by plasma-enhanced chemical vapor deposition (PECVD) are studied by combined Raman scattering and infrared (IR) absorption spectroscopy. The Raman scattering results identify presence of a-Si phase in the studied films at the relative Si content exceeding a threshold value of about 0.4. The a-Si amount correlates with the concentration of hydrogen in the films, the presence of which is detected by characteristic IR absorption bands corresponding to Si-H bending (about 660 cm-1) and stretching (a composite band in the range of about 1900-2400 cm-1) vibrations. The method of deconvolution of IR absorbance spectra in the range of about 600 to 1300 cm-1 developed earlier is used to reliably separate the IR band at about 660 cm-1. This band is identified to origin from the amorphous Si phase within the studied Si oxynitride films. This makes it possible to propose IR spectroscopy with analysis of the low-wavenumber part of the spectra as an efficient method of identifying phase composition of Si-rich Si oxynitride films. The obtained results contribute to understanding of the regularities of formation of phase compositions of PECVD grown Si oxynitride films and are useful for controlling the films properties for practical applications.
Phase compositions of Si oxynitride: A comprehensive thermodynamic modeling study
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine（乌克兰国家科学院瓦·拉什卡拉诺夫半导体物理研究所）；Educational Scientific Institute of High Technologies, Taras Shevchenko National University of Kyiv（基辅塔拉斯舍甫琴科国立大学高等技术教育科学研究所）；National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”（乌克兰国立技术大学“伊戈尔·西科尔斯基基辅理工学院）
Coarse-grained approach to amorphous and anisotropic materials in Kinetic Monte Carlo thin-films growth simulations: a case study of TiO2 and ZnO by Plasma Enhanced Chemical Vapor Deposition
Carbon Impurities on Graphene Synthesized by Chemical Vapor Deposition on Platinum
我们报告了纳米晶碳杂质与通过化学气相沉积（CVD）在铂上合成的石墨烯共存。我们观察到微米尺寸的岛状杂质层，其在光学显微镜或次级电子显微镜（SEM）中容易被误认为第二石墨烯层。岛的取向取决于Pt的结晶取向，如电子背散射衍射（EBSD）所示，表明石墨烯下方的无定形碳的生长。暗场TEM表明，除了均匀的单晶石墨烯之外，我们的样品还装饰有空间不均匀分布的纳米晶碳杂质。拉曼光谱显示出大的D峰，然而电特性显示出高迁移率（~ 6，000 cm 2/Vs），表明拉曼光谱在表征石墨烯的电子质量方面的局限性。
From Amorphous to Amorphous-Crystalline Mixed-Phase Boron Nitride: Evolution of the Thermal and Elastic Properties
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST（加泰罗尼亚纳米科学与纳米技术研究所）；Faculty of Physics, Autonomous University of Barcelona（巴塞罗那自治大学物理系）；Universite Claude Bernard Lyon 1, CNRS, LMI, UMR 5615（里昂第一大学）；Faculty of Physics and Astronomy, Adam Mickiewicz University（亚当密茨凯维奇大学物理与天文学院）；International Iberian Nanotechnology Laboratory（伊比利亚纳米技术国际实验室）；ICREA（加泰罗尼亚高级研究院）
