In this work, we simulated the physical vapor deposition (PVD) process of Cu atoms on the amorphous SiO$_2$ substrate. The resulting Cu thin layer exhibit amorphous structure. The Cu liquid quenching from 2000 K to 50 K was also simulated with different cooling rate to form the Cu metallic glass for comparison. The Cu glasses from the two different processes (PVD and quenching) revealed the same radial distribution function but different local structure from the Voronoi tessellation analysis. The PVD glass exhibit higher densities and lower potential energy compared with the melt-quenched counterpart, which corresponded to the properties of ultrastable glasses.
We report the density-functional calculations that systematically clarify the stable forms of carbon-related defects and their energy levels in amorphous SiO$_2$ using the melt-quench technique in molecular dynamics. Considering the position dependence of the O chemical potential near and far from the SiC/SiO$_2$ interface, we determine the most abundant forms of carbon-related defects: Far from the interface, the CO$_2$ or CO in the internal space in SiO$_2$ is abundant and they are electronically inactive; near the interface, the carbon clustering is likely and a particular mono-carbon defec…
We present the investigations on atomic dynamics and Li+ diffusion in crystalline and amorphous Li2Si2O5 using quasielastic (QENS) and inelastic neutron scattering (INS) studies supplemented by ab-initio molecular dynamics simulations (AIMD). The QENS measurements in the amorphous phase of Li2Si2O5 show a narrow temperature window (700 < T < 775 K), exhibiting significant quasielastic broadening corresponding to the fast Li+ diffusion and relaxation of SiO4 units to the crystalline phase. Our INS measurements clearly show the presence of large phonon density of states (PDOS) at low energy (low…
The recent emergence of topological insulators (TI) has spurred intensive efforts to grow TI thin films on various substrates. However, little is known about how robust the topological surface states (TSS) are against disorders and other detrimental effects originating from the substrates. Here, we report observation of a well-defined TSS on Bi2Se3 films grown on amorphous SiO2 (a-SiO2) substrates and a large gating effect on these films using the underneath doped-Si substrate as the back gate. The films on a-SiO2 were composed of c-axis ordered but random in-plane domains. However, despite th…
We use first-principles simulations to investigate the topological properties of Bi$_2$Se$_3$ thin films deposited on amorphous SiO2, Bi$_2$Se$_3$/a-SiO$_2$, which is a promising substrate for topological insulator (TI) based device applications. The Bi$_2$Se$_3$ films are bonded to a-SiO$_2$ mediated by van der Waals interactions. Upon interaction with the substrate, the Bi$_2$Se$_3$ topological surface and interface states remain present, however the degeneracy between the Dirac-like cones is broken. The energy separation between the two Dirac-like cones increases with the number of Bi$_2$Se…
Amorphous insulating oxides play a significant role in the contemporary electronic industry. Understanding the band alignment of heterogeneous interfaces containing amorphous structures helps to better control the carrier transport property at the interface. Classical band offset methods developed previously line-up eigenlevels with respect to an ideal bulk reference or vacuum level. However, the local disorder of amorphous structures makes the bulk reference ambiguous. Therefore, classical methods cannot be applied. In this study, we introduce a new approach based on the Linear Combination of…
The passivation by diffusing H2 of silicon dangling bond defects (E' centers, induced by laser irradiation in amorphous SiO_2 (silica), is investigated in situ at several temperatures. It is found that the reaction between E' center and H_2 requires an activation energy of 0.38eV, and that its kinetics is not diffusion-limited. The results are compared with previous findings on the other fundamental paramagnetic point defect in silica, the non bridging oxygen hole center, which features completely different reaction properties with H_2. Besides, a comparison is proposed with literature data on…
We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy based magnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a flat surface were achieved using a MgO buffer layer. A tunnel magnetoresistance (TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure on a 7.5-nm-thick MgO buffer. Spin-transfer torque induced magnetization switching was achieved in the MTJs with a 2-nm-thick polycrystalline CFA film as a switching layer. Using a thermal activation model, the in…
Germanium dioxide ($GeO_2$) is a chemical analogue of $SiO_2$. Furthermore, it is also to some extent a structural analogue, as the low and high-pressure short-range order (tetrahedral and octahedral) is the same. However, a number of differences exist. For example, the $GeO_2$ phase diagram exhibits a smaller number of polymorphs, and all three $GeO_2$ phases (crystalline, glass, liquid) have an increased sensitivity to pressure, undergoing pressure induced changes at much lower pressures than their equivalent $SiO_2$ analogues. In addition, differences exist in $GeO_2$ glass in the medium ra…
We have studied the effects of oxygen on hydrogenated amorphous/crystalline silicon films in terms of their structural and optical properties. Different hydrogenated silicon oxide (SiO:H) and silicon (Si:H) films are fabricated between microcrystalline and amorphous transition region. X-ray diffraction, Raman, FTIR and UV-Vis emission spectrometry have been used to characterize different films. A comparison of the results with those of different types of films like hydrogenated amorphous silicon oxide (a-SiO:H), hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon ($μ$c-Si:H) f…
Predicting the Fracture Propensity of Amorphous Silica Using Molecular Dynamics Simulations and Machine Learning
Sibley School of Mechanical and Aerospace Engineering, Cornell University（康奈尔大学机械与航空航天工程学院）；Department of Engineering Mechanics, Xi’an Jiaotong University（西安交通大学工程力学系）
We studied the temperature dependence of the absorption coefficient of amorphous SiO$_2$ in the range from 8 to 17.5~eV obtained by Kramers-Kronig dispersion analysis of reflectivity spectra. We demonstrate the main excitonic resonance at 10.4~eV to feature a close Lorentzian shape red-shifting with increasing temperature. This provides a strong evidence of excitons being delocalized notwithstanding the structural disorder intrinsic to the amorphous system. Excitons turn out to be coupled to an average phonon mode of 83~meV energy.
Identification of formation of amorphous Si phase in SiOxNy films produced by plasma enhanced chemical vapor deposition
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine（乌克兰国家科学院瓦·拉什卡廖夫半导体物理研究所）；Educational Scientific Institute of High Technologies, Taras Shevchenko National University of Kyiv（基辅塔拉斯舍甫琴科国立大学高等技术教育科学研究所）；National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”（乌克兰国立技术大学“伊戈尔·西科尔斯基基辅理工学院”）；Institute of Physics, National Academy of Sciences of Ukraine（乌克兰国家科学院物理研究所）
The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and Secondary Ion Mass Spectroscopy (SIMS). The nanocrystals were formed after heat treatment at high temperature of a sputtered 10 nm thick silicon rich oxide on 3 nm SiO$_2$ layer made by Rapid Thermal Oxidation (RTO) of silicon. Nanocrystals precipitate when the excess silicon concentration exceeds 50 area %. Below this percentage amorphous silicon nanoclusters we…
In an effort to extend the reach of current ab initio calculations to simulations requiring millions of configurations for complex systems such as heterostructures, we have parameterized the third-generation Charge Optimized Many-Body (COMB3) potential using solely ab initio total energies, forces, and stress tensors as input. The quality and the predictive power of the new forcefield is assessed by computing properties including the cohesive energy and density of SiO$_2$ polymorphs, surface energies of alpha-quartz, and phonon densities of states of crystalline and amorphous phases of SiO$_2$…
Classical molecular-dynamics simulations have been carried out to investigate densification mechanisms in silicon dioxide thin films deposited on an amorphous silica surface, according to a simplified ion-beam assisted deposition (IBAD) scenario. We compare the structures resulting from the deposition of near-thermal (1 eV) SiO$_{2}$ particles to those obtained with increasing fraction of 30 eV SiO$_{2}$ particles. Our results show that there is an energy interval - between 12 and 15 eV per condensing SiO$_2$ unit on average - for which the growth leads to a dense, low-stress amorphous structu…
Recent theoretical studies of amorphous silicon [Y. Pan et al. Phys. Rev. Lett. 100 206403 (2008)] have revealed subtle but significant structural correlations in network topology: the tendency for short (long) bonds to be spatially correlated with other short (long) bonds). These structures were linked to the electronic band tails in the optical gap. In this paper, we further examine these issues for amorphous silicon, and demonstrate that analogous correlations exist in amorphous SiO2, and in the organic molecule, b-carotene. We conclude with a discussion of the origin of the effects and its…
While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work, amorphous-HfOX based memristor devices on two different substrates, thin SiO2(280 nm)/Si and glass, with different thermal conductivities in the range from 1.2 to 138 W/m-K were fabricated. Devices on glass substrates exhibit lower reset voltage, wider memory window and, in turn, a higher performance window. In addition, the devices on glass show better endurance than th…
The structure of amorphous materials has been debated since the 1930's as a binary question: amorphous materials are either Zachariasen continuous random networks (Z-CRNs) or Z-CRNs containing crystallites. It was recently demonstrated, however, that amorphous diamond can be synthesized in either form. Here we address the question of the structure of single-atom-thick amorphous monolayers. We reanalyze the results of prior simulations for amorphous graphene and report kinetic Monte Carlo simulations based on alternative algorithms. We find that crystallite-containing Z-CRN is the favored struc…
Experimental results on the thermal desorption of benzene (C6H6) from amorphous silica (SiO2) are presented. The amorphous SiO2 substrate was imaged using atomic force microscopy (AFM), revealing a surface morphology reminiscent of that of interplanetary dust particles (IDPs). Temperature programmed desorption (TPD) experiments were conducted for a wide range of C6H6 exposures, yielding information on both C6H6-SiO2 interactions and the C6H6-C6H6 interactions present in the bulk C6H6 ice. The low coverage experiments reveal complicated desorption behaviour that results both from porosity and r…
We computed by a modified tight binding approximation, the total electronic energy of three different hybrid polymers: $H-SiO_2$, $CH_3-SiO_2$ and $C_6H_5-SiO_2$. We made the hypothesis that the structures of these polymers are amorphous. Computational results regarding the total electronic energy and experimental data \cite{ferchichi} on the toughness of these three hybrid polymers were compared. A good qualitative agreement was found between computations and experiments.
In the present Ph.D. Thesis we report an experimental investigation on the effects of gamma- and beta-ray irradiation and of subsequent thermal treatment on many types of a-SiO2 materials, differing in the production methods, OH- and Al-content, and oxygen deficiencies. Our main objective is to gain further insight on the microscopic structures of the E'_gamma, E'_delta, E'_alpha and triplet paramagnetic centers, which are among the most important and studied class of radiation induced intrinsic point defects in a-SiO2. To pursue this objective, we use prevalently the EPR spectroscopy. In part…
We report on the results of an extensive campaign of optical and mechanical characterization of the ion-beam sputtered oxide layers (Ta$_2$O$_5$, TiO$_2$, Ta$_2$O$_5$-TiO$_2$, SiO$_2$) within the high-reflection coatings of the Advanced LIGO, Advanced Virgo and KAGRA gravitational-wave detectors: refractive index, thickness, optical absorption, composition, density, internal friction and elastic constants have been measured; the impact of deposition rate and post-deposition annealing on coating internal friction has been assessed. For Ta$_2$O$_5$ and SiO$_2$ layers, coating internal friction i…
The deposition of boron-doped amorphous carbon thin films on SiO2 substrate was achieved via a focused ion beam-assisted chemical vapor deposition of triphenyl borane (C18H15B) and triphenyl borate (C18H15BO3). The existence of boron in the deposited film from triphenyl borane, with a precursor temperature of 90 °C, was confirmed by a core level X-ray photoelectron spectroscopy analysis. The film exhibited a semiconducting behavior with a band gap of 285 meV. Although the band gap was decreased to 197 meV after an annealing process, the film was still semiconductor. Additionally, a drastic red…
In this investigation, force field-based molecular dynamics (MD) simulations have been employed to generate detailed structural representations for a range of amorphous quaternary CaO-MgO-Al2O3-SiO2 (CMAS) and ternary CaO-Al2O3-SiO2 (CAS) glasses. Comparison of the simulation results with select experimental X-ray and neutron total scattering and literature data reveals that the MD-generated structures have captured the key structural features of these CMAS and CAS glasses. Based on the MD-generated structural representations, we have developed two structural descriptors, specifically (i) aver…
Graphene devices require electric contacts with metals, particularly with gold. Scanning tunneling spectroscopy studies of electron local density of states performed on mono-, bi- and tri- graphene layer deposited on metallic conductive Au/Cr/SiO2/Si substrate shows that gold substrate causes the Fermi level shift downwards which means that holes are donated by metal substrate to graphene which becomes p-type doped. These experimental results are in good accordance with recently published density function theory calculations. The estimated positions of the Dirac point show that the higher numb…
A combination of classical molecular dynamics (MD) and ab initio Car-Parrinello molecular dynamics (CPMD) simulations is used to investigate the adsorption of water on a free amorphous silica surface. From the classical MD SiO_2 configurations with a free surface are generated which are then used as starting configurations for the CPMD.We study the reaction of a water molecule with a two-membered ring at the temperature T=300K. We show that the result of this reaction is the formation of two silanol groups on the surface. The activation energy of the reaction is estimated and it is shown that …
Silicon has long been synonymous with semiconductor technology. This unique role is due largely to the remarkable properties of the Si-SiO_2 interface, especially the (001)-oriented interface used in most devices. Although Si is crystalline and the oxide is amorphous, the interface is essentially perfect, with an extremely low density of dangling bonds or other electrically active defects. With the continual decrease of device size, the nanoscale structure of the silicon/oxide interface becomes more and more important. Yet despite its essential role, the atomic structure of this interface is s…
We show that ZIF-4, a metal-organic framework (MOF) with a zeolitic structure, undergoes a crystal--amorphous transition on heating to 300 $^\circ$C. The amorphous form, which we term a-ZIF, is recoverable to ambient conditions or may be converted to a dense crystalline phase of the same composition by heating to 400 $^\circ$C. Neutron and X-ray total scattering data collected during the amorphization process are used as a basis for reverse Monte Carlo refinement of an atomistic model of the structure of a-ZIF. We show that the structure is best understood in terms of a continuous random netwo…
The structure and transport properties of SiO2-Al2O3 melts containing 13 mol% and 47 mol% Al2O3 are investigated by means of large scale molecular dynamics computer simulations. The interactions between the atoms are modelled by a pair potential which is a modified version of the one proposed by Kramer et al. [J. Am. Chem. Soc. 64, 6435 (1991)]. Fully equilibrated melts in the temperature range 6000 K >= T > 2000 K are considered as well as glass configurations, that were obtained by a rapid quench from the lowest melt temperatures. Each system is simulated at two different densities in order …
Structure of amorphous nangranular composite (Co$_{86}$Nb$_{12}$Ta$_2$)$_x$(SiO$_2$)$_{1-x}$ films was studied by means of grazing-incidence small-angle X-ray scattering as a function of atomic concentration $x$ of the metal fraction in vicinity of the percolation threshold. It has been established that the average size of magnetic nanoparticles increases with $x$ and this increment exhibit the anisotropic character. It was found that in a whole concentration range the particles are elongated along the growth direction perpendicular to the film plane. For the lowest concentration $x=0.193$ clu…
Bulk amorphous materials have been studied extensively and are widely used, yet their atomic arrangement remains an open issue. Although they are generally believed to be Zachariasen continuous random networks, recent experimental evidence favours the competing crystallite model in the case of amorphous silicon. In two-dimensional materials, however, the corresponding questions remain unanswered. Here we report the synthesis, by laser-assisted chemical vapour deposition, of centimetre-scale, free-standing, continuous and stable monolayer amorphous carbon, topologically distinct from disordered…
Pairs of electrodes with nanometer separation (nano-gap) are achieved through an electromigration-induced break-junction (EIBJ) technique at room temperature. Lithographically defined gold (Au) wires are formed by e-beam evaporation over oxide coated silicon substrates silanized with (3-Mercaptopropyl)trimethoxysilane (MPTMS) and then subjected to electromigration at room temperature to create a nanometer scale gap between the two newly formed Au electrodes. The Si-O-Si covalent bond at the SiO$_2$ surface and the Au-sulphur (Au-S) bond at the top evaporated Au side, makes MPTMS as an efficien…
We report results of ab initio constant-pressure molecular dynamics simulations of sulfur compression leading to structural transition and pressure-induced amorphization. Starting from the orthorhombic S-I phase composed of S$_8$ ring molecules we find at room temperature and pressure of 20 GPa a transformation to monoclinic phase where half of the molecules develop a different conformation. Upon further compression, the monoclinic phase undergoes pressure-induced amorphization into an amorphous phase, in agreement with experiments. We study the dynamics of the amorphization transition and inv…
The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge. In this paper, we report on a simple rapid thermal treatment method for the fast and direct growth of high-quality, large-scale monolayer graphene on a SiO2/Si substrate from solid carbon sources. The stack structure of solid carbon layer/copper film/SiO2 is adopted in the RTT process. The inserted copper film does not only act as an active catalyst for the carbon precursor but also serves as a "filter" that preven…
Here we report mid infrared (mid-IR) photothermal response of multi layer MoS2 thin film grown on crystalline (p-type silicon and c-axis oriented single crystal sapphire) and amorphous substrates (Si/SiO2 and Si/SiN) by pulsed laser deposition (PLD) technique. The photothermal response of the MoS2 films was measured as changes in the resistance of MoS2 films when irradiated with mid IR (7 to 8.2 μm) source. We show that it is possible to enhance the temperature coefficient of resistance (TCR) of the MoS2 thin film by controlling the interface through proper choice of substrate and growth condi…
Physics-Informed Glass-Structure Descriptors for Assessing the Intrinsic Reactivity of Mixed Amorphous-Crystalline Precursors in Alkali-Activated Materials
Hebei University of Technology（河北工业大学）；Rice University（莱斯大学）；Rice Advanced Materials Institute, Rice University（莱斯大学先进材料研究所）；Ken Kennedy Institute, Rice University（莱斯大学肯·肯尼迪研究所）
