Characterization of low-loss hydrogenated amorphous silicon films for superconducting resonators

氢化非晶硅中的低两能级系统噪声

Low two-level-system noise in hydrogenated amorphous silicon

针对亚开尔文温度下非晶电介质中两能级系统噪声降低超导谐振器器件性能的问题，测量了PECVD制备的氢化非晶硅薄膜的TLS噪声，其噪声水平较现有非晶电介质最优结果提升5倍以上，可媲美晶体电介质谐振器。

Hydrogenated Amorphous Silicon Carbide: A Low-loss Deposited Dielectric for Microwave to Submillimeter Wave Superconducting Circuits

Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits and kinetic inductance parametric amplifiers. Compared with planar structures, multi-layer structures such as microstrips are more compact and eliminate radiation loss at high frequencies. Multi-layer structures are most easily fabricated with deposited dielectrics, which typically exhibit higher dielectric loss than crystalline dielectrics. We measured the sub-kelvin and low-power microwave and mm-submm wave dielectric loss of hydrogenated amorphous sili…

氢化非晶硅中低电场与零温两能级系统损耗的表征

Characterization of the low electric field and zero-temperature two-level-system loss in hydrogenated amorphous silicon

本研究表征了氢化非晶硅薄膜的两能级系统损耗，通过等离子体增强化学气相沉积制备的样品实现了优于现有文献2-4倍的低损耗，提取了真实零温低场损耗角正切，为超导谐振器和毫米波/太赫兹传输线提供了低损耗方案。

用于 NEW-MUSIC 的采用氢化非晶硅平行板电容器的微带耦合集总元件铝基动能电感探测器的低频噪声性能

Low-Frequency Noise Performance of Microstrip-Coupled Lumped-Element Aluminum KIDs using Hydrogenated Amorphous Silicon Parallel-Plate Capacitors for NEW-MUSIC

研究用于NEW-MUSIC的微带耦合集总元件铝基动能电感探测器低频噪声，通过测量发现黑暗及光学负载下噪声特性，对a-Si:H材料低频TLS噪声设限，证明该探测器设计受光子噪声限制，a-Si:H PPC-KIDs是可行新技术。

Tunable sub-gap radiation detection with superconducting resonators

We have fabricated planar amorphous Indium Oxide superconducting resonators ($T_c\sim2.8$ K) that are sensitive to frequency-selective radiation in the range of 7 to 10 GHz. Those values lay far below twice the superconducting gap that worths about 200 GHz. The photons detection consists in a shift of the fundamental resonance frequency. We show that the detected frequency can be adjusted by modulating the total length of the superconducting resonator. We attribute those observations to the excitation of higher-order resonance modes. The coupling between the fundamental lumped and the higher o…

使用低温 ICPCVD 沉积的氮化硅和非晶硅的低温微波性能

Cryogenic microwave performance of silicon nitride and amorphous silicon deposited using low-temperature ICPCVD

本文针对超导探测器低温集成需求，表征 75 °C ICPCVD 沉积的 Si₃N₄、SiNₓ 和 α-Si 低温微波介电性能。