Titanium (Ti) is an adhesion and contact metal commonly used in nanoelectronics and two-dimensional (2D) materials research. However, when Ti is deposited on graphene (Gr), we obtain dramatically different film morphology depending on the experimental conditions. Through a combination of transmission electron microscopy, Raman spectroscopy, and ab initio density functional theory calculations, we show that the most critical parameters are the number of Gr layers, the nature of the Gr support, and the deposition temperature. Particularly distinctive is the island morphology and large defect density of Ti on monolayer Gr, compared to bilayer or thicker Gr. We propose that this results from structural and mechanical differences between monolayer and thicker Gr flakes, where monolayer Gr is more flexible, exhibits larger surface roughness and therefore lower Ti diffusivity, and is more easily damaged. Our results highlight the extreme sensitivity of Ti morphology on Gr to processing and substrate conditions, allowing us to propose design rules for controlling Ti-Gr interface properties and morphology and to discuss the implications for other technologically relevant metal deposition processes.
Ab initio calculations within the density-functional theory formalism are performed to investigate the ground state, electric charge doping, and electronic properties of titanium and titanium dioxide monolayers adsorbed on a graphene surface. A new ground state structrure of Ti monolayer adsorbed on graphene is reported which is shown to be stable up to T = 500 K. Effects due to lower and higher Ti adatoms coverage are studied. We find that the adsorbed Ti provides a strong n-type doping which supports recent experimental observations. On the other hand, TiO_2 can induce both p- and n-type dop…
Titanium-island formation on graphene as a function of defect density is investigated. When depositing titanium on pristine graphene, titanium atoms cluster and form islands with an average diameter of about 10nm and an average height of a few atomic layers. We show that if defects are introduced in the graphene by ion bombardment, the mobility of the deposited titanium atoms is reduced and the average diameter of the islands decreases to 5nm with monoatomic height. This results in an optimized coverage for hydrogen storage applications since the actual titanium surface available per unit grap…
A stack of titanium foils was irradiated with 136 MeV 136Xe to study microstructure damage and phase stability of titanium upon irradiation. X- ray diffraction, scanning electron microscopy/energy dispersive spectroscopy and atomic force microscopy were used to study the resulting microstructure damage and phase stability of titanium. We observed the phase transfor- mation of polycrystalline titanium from alpha-Ti (hexagonally closed packed (hcp)) to face centered cubic (fcc) after irradiation with 2.2 x 1015 ions/cm2. Irradiation of Ti with 1.8 x 1014-2.2 x 1015 ions/cm2 resulted in the forma…
Contact Resistance (RC) is a major limiting factor in the performance of graphene devices. RC is sensitive to the quality of the interface and the composition of the contact, which are affected by the graphene transfer process and contact deposition conditions. In this work, a linear correlation is observed between the composition of Ti contacts, characterized by X-ray photoelectron spectroscopy, and the Ti/graphene (Gr) contact resistance measured by the transfer length method. We find that contact composition is tunable via deposition rate and base pressure. Reactor base pressure is found to…
We delineate a general theoretical framework to determine the substrate-regulated graphene morphology through energy minimization. We then apply such a framework to study the graphene morphology on a substrate with periodic surface grooves. Depending on the substrate surface roughness and the graphene-substrate interfacial bonding energy, the equilibrium morphology of graphene ranges from 1) closely conforming to the substrate, to 2) remaining flat on the substrate. Interestingly, in certain cases, the graphene morphology snaps between the above two limiting states. Our quantitative results en…
Graphene is intrinsically non-flat and corrugates randomly. Since the corrugating physics of atomically-thin graphene is strongly tied to its electronics properties, randomly corrugating morphology of graphene poses significant challenge to its application in nanoelectronic devices for which precise (digital) control is the key. Recent studies revealed that the morphology of substrate-supported graphene is regulated by the graphene-substrate interaction, thus is distinct from the random intrinsic morphology of freestanding graphene. The regulated extrinsic morphology of graphene sheds light on…
Understanding the adhesion between graphene and other materials is crucial for achieving more reliable graphene-based applications in electronic devices and nanocomposites. The ultra-thin profile of graphene, however, poses significant challenge to direct measurement of its adhesion property using conventional approaches. We show that there is a strong correlation between the morphology of graphene on a compliant substrate with patterned surface and the graphene-substrate adhesion. We establish an analytic model to quantitatively determine such a strong correlation. Results show that, dependin…
The graphene morphology regulated by nanowires patterned in parallel on a substrate surface is quantitatively determined using energy minimization. The regulated graphene morphology is shown to be governed by the nanowire diameter, the nanowire spacing and the interfacial bonding energies between the graphene and the underlying nanowires and substrate. We demonstrate two representative regulated graphene morphologies and determine critical values of the nanowire spacing, nanowire diameter and interfacial bonding energies at which graphene switches between the two representative morphologies. I…
We report on "graphene-like" mechanical exfoliation of thin films of titanium ditelluride and investigation of their electronic properties. The exfoliated crystalline TiTe2 films were used as the channel layers in the back-gated field-effect transistors fabricated with Ti/Al/Au metal contacts on SiO2/Si substrates. The room-temperature current-voltage characteristics revealed strongly non-linear behavior with signatures of the source-drain threshold voltage similar to those observed in the charge-density-wave devices. The drain-current showed an unusual non-monotonic dependence on the gate bia…
We investigate the morphology of quasi-free-standing monolayer graphene (QFMLG) formed at several temperatures by hydrogen intercalation and discuss its relationship with transport properties. Features corresponding to incomplete hydrogen intercalation at the graphene-substrate interface are observed by scanning tunneling microscopy on QFMLG formed at 600 and 800°C. They contribute to carrier scattering as charged impurities. Voids in the SiC substrate and wrinkling of graphene appear at 1000°C, and they decrease the carrier mobility significantly.
Graphene is formed on SiC(000-1) surfaces (the so-called C-face of the crystal) by annealing in vacuum, with the resulting films characterized by atomic force microscopy, Auger electron spectroscopy, scanning Auger microscopy and Raman spectroscopy. Morphology of these films is compared with the graphene films grown on SiC(0001) surfaces (the Si-face). Graphene forms a terraced morphology on the C-face, whereas it forms with a flatter morphology on the Si-face. It is argued that this difference occurs because of differing interface structures in the two cases. For certain SiC wafers, nanocryst…
Thin TiO2 films on quartz substrates were prepared by spin coating of undoped and metal-ion-doped Sol Gel precursors. These films were characterised by Scanning Electron Microscopy, Laser Raman Microspectroscopy, Xray Diffraction and UV Vis Transmission. The photocatalytic performances of the films were assessed by the photo-degradation of methylene-blue in aqueous solution under UV irradiation. Films exhibited a high degree of orientation and a thermal stabilization of the anatase phase as a result of substrate effects. In the absence of dopants, the rutile phase formed as parallel bands in t…
We directly compare the effect of metallic titanium (Ti) and insulating titanium dioxide (TiO2) on the transport properties of single layer graphene. The deposition of Ti results in substantial n-type doping and a reduction of graphene mobility by charged impurity scattering. Subsequent exposure to oxygen largely reduces the doping and scattering by converting Ti into TiO2. In addition, we observe evidence for short-range scattering by TiO2 impurities. These results illustrate the contrasting scattering mechanisms for identical spatial distributions of metallic and insulating adsorbates.
Graphene monolayers supported on oxide substrates have been demonstrated with superior charge mobility and thermal transport for potential device applications. Morphological corrugation can strongly influence the transport properties of the supported graphene. In this paper, we theoretically analyze the morphological stability of a graphene monolayer on an oxide substrate, subject to van der Waals interactions and in-plane mismatch strains. First, we define the equilibrium separation and the interfacial adhesion energy as the two key parameters that characterize the van der Waals interaction b…
We determine the graphene morphology regulated by substrates with herringbone and checkerboard surface corrugations. As the graphene/substrate interfacial bonding energy and the substrate surface roughness vary, the graphene morphology snaps between two distinct states: 1) closely conforming to the substrate and 2) remaining nearly flat on the substrate. Such a snapthrough instability of graphene can potentially lead to desirable electronic properties to enable graphene-based devices.
Terrace-sized, single-orientation graphene can be grown on top of a carbon buffer layer on silicon carbide by thermal decomposition. Despite its homogeneous appearance, a surprisingly large variation in electron transport properties is observed. Here, we employ Aberration-Corrected Low-Energy Electron Microscopy (AC-LEEM) to study a possible cause of this variability. We characterize the morphology of stacking domains between the graphene and the buffer layer of high-quality samples. Similar to the case of twisted bilayer graphene, the lattice mismatch between the graphene layer and the buffer…
We investigate theoretically the adhesion and electronic properties of graphene on a muscovite mica surface using the density functional theory (DFT) with van der Waals (vdW) interactions taken into account (the vdW-DF approach). We found that irregularities in the local structure of cleaved mica surface provide different mechanisms for the mica-graphene binding. By assuming electroneutrality for both surfaces, the binding is mainly of vdW nature, barely exceeding thermal energy per carbon atom at room temperature. In contrast, if potassium atoms are non uniformly distributed on mica, the diff…
We report on detailed microscopy studies of graphene and few-layer-graphene produced by mechanical exfoliation on various semi-conducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese p-doped (001)-GaAs and InGaAs substrates. The morphology of graphene on these substrates was investigated by scanning electron and atomic force microscopy and compared to layers on silicon oxide. It was found that graphene sheets strongly follow the texture of the sustaining substrates independent on doping, polarity or roughness. Furthermore resist residues e…
Hydrogen adsorption on graphene can be increased by functionalization with Ti. This requires dispersing Ti islands on graphene as small and dense as possible, in order to increase the number of hydrogen adsorption sites per Ti atom. In this report, we investigate the morphology of Ti on nanocrystalline graphene and its hydrogen adsorption by scanning tunneling microscopy and thermal desorption spectroscopy, and compare the results with equivalent measurements on single-crystalline graphene. Nanocrystalline graphene consists of extremely small crystal grains of < 5 nm size. Ti atoms preferentia…
Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene.
Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free carrier transport studies were conducted through Hall effect measurements, and carrier mobilities were found to increase and sheet carrier densities were found to decrease for those films grown under arg…
The evolution in the surface morphology of epitaxial graphene films and 6H-SiC(0001) substrates is studied by electron channeling contrast imaging. Whereas film thickness is determined by growth temperature only, increasing growth times at constant temperature affect both internal stress and film morphology. Annealing times in excess of 8-10 minutes lead to an increase in the mean square roughness of SiC step edges to which graphene films are pinned, resulting in compressively stressed films at room temperature. Shorter annealing times produce minimal changes in the morphology of the terrace e…
Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy (LEEM) and angle-resolved photoemission (ARPES). We obtain an identification of single and bilayer of graphene film by comparing the characteristic features in electron reflectivity spectra in LEEM to the PI-band structure as revealed by ARPES. We demonstrate that LEEM serves as a tool to accurately determine the local extent of graphene layers as well as the l…
The bio-inertness of titanium and its alloys attracts their use as bone implants. However a bioactive coating is usually necessary for improving the bone bonding of such implants. In this study, electrophoretic deposition(EPD) of hydroxyapatite (HA) powder on titanium plate was performed using butanol as solvent under direct current (DC) and alternating current (AC) fields. The zeta potential of the suspensions was measured to understand their stability and the charge on the particles. Coating thickness was varied by adjusting the voltage and time of deposition. Surface morphology and cross se…
We report the first experimental study of graphene transferred on \b{eta}-Si3N4(0001)/Si(111). Our work provides a comprehensive quantitative understanding of the physics of ultrathin Si3N4 as a gate dielectric for graphene-based devices. The Si3N4 film was grown on Si(111) under ultra-high vacuum (UHV) conditions and investigated by scanning tunneling microscopy (STM). Subsequently, a graphene flake was deposited on top of it by a polymer-based transfer technique, and a Hall bar device was fabricated from the graphene flake. STM was employed again to study the graphene flake under UHV conditi…
Interfaces play a key role in low dimensional materials like graphene or its boron nitrogen analog, white graphene. The edge energy of h-BN has not been reported as its lower symmetry makes it difficult to separate the opposite B-rich and N-rich zigzag sides. We report unambiguous energy values for arbitrary edges of BN, including the dependence on the elemental chemical potentials of B and N species. A useful manifestation of the additional Gibbs degree of freedom in the binary system, this dependence offers a way to control the morphology of pure BN or its carbon inclusions, and to engineer …
Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis sub-strates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A process was developed to form graphene on the substrates immediately after H2 etching and Raman spectroscopy of these samples confirmed the formation of graphene. The morphology of the graphene is descr…
Additive manufacturing has been adopted to process nickel-titanium shape memory alloys due to its advantages of flexibility and minimal defects. The current layer-by-layer method is accompanied by a complex temperature history, which is not beneficial to the final characteristics of shape memory alloys. In this study, a continuous directed energy deposition method has been proposed to improve microstructure uniformity. The spatial characterization of nickel-titanium shape memory alloy fabricated by continuous directed energy deposition is investigated to study the temperature history, phase co…
Near-ambient pressure XPS and STM experiments are performed to study the intercalation of oxygen and nitrogen at different partial gas pressures and different temperatures in the graphene/Ni/Ir(111) system of different morphologies. We performed detailed experiments on the investigation of the chemical state and topography of graphene, before and after gas intercalation, depending on the amount of pre-intercalated Ni in graphene/Ir(111). It is found that only oxygen can be intercalated under graphene in all considered cases, indicating the role of the intra-molecular bonding strength and possi…
A number of the charge-density-wave materials reveal a transition to the macroscopic quantum state around 200 K. We used graphene-like mechanical exfoliation of titanium diselenide crystals to prepare a set of films with different thicknesses. The transition temperature to the charge-density-wave state was determined via modification of Raman spectra of titanium diselenide films. It was established that the transition temperature can increase from its bulk value to ~240 K as the thickness of the van-der-Waals films reduces to the nanometer range. The obtained results are important for the prop…
In this work, the study of thermal conductivity before and after in-situ ring-opening polymerization of cyclic butylene terephthalate into poly (butylene terephthalate) in presence of graphene-related materials (GRM) is addressed, to gain insight in the modification of nanocomposites morphology upon polymerization. Five types of GRM were used: one type of graphite nanoplatelets, two different grades of reduced graphene oxide (rGO) and the same rGO grades after thermal annealing for 1 hour at 1700°C under vacuum to reduce their defectiveness. Polymerization of CBT into pCBT, morphology and nano…
The morphology of graphene formed on the (000-1) surface (the C-face) and the (0001) surface (the Si-face) of SiC, by annealing in ultra-high vacuum or in an argon environment, is studied by atomic force microscopy and low-energy electron microscopy. The graphene forms due to preferential sublimation of Si from the surface. In vacuum, this sublimation occurs much more rapidly for the C-face than the Si-face, so that 150 C lower annealing temperatures are required for the C-face to obtain films of comparable thickness. The evolution of the morphology as a function of graphene thickness is exami…
The surface tension $σ$ of free-standing graphene is studied by path-integral simulations as a function of the temperature and the in-plane stress. Even if the applied stress vanishes, the membrane displays a finite surface tension $σ$ due to the coupling between the bending oscillations and the real area of the membrane. Zero-point effects for $σ$ are significant below 100 K. Thermal cooling drives the membrane from a planar to a wrinkled morphology. Upon heating the change is reversible and shows hysteresis, in agreement to recent experiments performed on supported graphene.
Herein, an effort has given to sheds light on the effects of plasma process parameters on the growth of vertical graphene nanosheets (VGNs) by plasma enhanced chemical vapor deposition (PECVD. The parameters include substrate temperature, microwave power and distance between plasma sources to substrate. The significant influence of these variable parameters is observed on the morphology, growth rate and crystallinity. Thus these parameters are found to be deciding factors, which determine the surface reaction and growth kinetics that governed the final structure and controlled morphology of VG…
With use of carefully designed molecular dynamics simulations, we demonstrate tuning of dynamic ripples in free-standing graphene by applying a local out-of-plane sinusoidal excitation. Depending on the boundary conditions and external modulation, we show control of the local dynamic morphology, including flattening and stable rippling patterns. In addition to studying the dynamic response of atomically thin layers to external time-varying excitation, our results open intriguing possibilities for modulating their properties via local dynamic morphology control.
The effect of graphene flakes on the strength of Ni-graphene composites is investigated using molecular dynamics simulation. Rather than introducing flakes as flat structures into the Ni matrix, as it is common in available studies, we introduce them into the heated liquid Ni and let the structures equilibrate in a 14-ns molecular-dynamics run; these structures are then quenched to obtain the composites. By varying the interaction of flake edge atoms with the Ni matrix, two different flake morphologies -- wrinkled vs flat -- are obtained. The mechanical properties, and in particular the compos…
The intercalation of different species in graphene-metal interfaces is widely used to stabilise the artificial phases of different materials. However, formation of the surface alloys upon the guest-metal intercalation is still an open question, which is very important for the fabrication of graphene-based interfaces with desired properties. Here, the widely studied interfaces of graphene with Ru(0001) and Ir(111) were modified using intercalation of a thin Mn layer and investigated by means of scanning tunnelling microscopy (STM) accompanied by density functional theory (DFT) calculations, whi…
We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation of local buffer layer domains are identified to be the origin of undesirably high step edges in excellent agreement with the predictions of a general model of step dynamics. The applied polymer-assisted sublimation growth method demonstrates that the key principle to suppress this behavior is the uniform nucleation of the buffer layer. In this way, the silicon carbide surface is stabilized such that ultra-flat surfa…
Thick anatase films were fabricated on graphite substrates using a method of anodic aqueous electrophoretic-deposition using oxalic acid as a dispersant. Thick films were subsequently fired in air and in nitrogen at a range of temperatures. The morphology and phase composition were assessed and the photocatalytic performance was examined by the inactivation of Escherichia coli in water. It was found that the transformation of anatase to rutile is enhanced by the presence of a graphite substrate through reduction effects. The use of a nitrogen atmosphere allows higher firing temperatures, resul…
Wrinkling is a ubiquitous phenomenon in two-dimensional membranes. In particular, in the large-scale growth of graphene on metallic substrates, high densities of wrinkles are commonly observed. Despite their prevalence and potential impact on large-scale graphene electronics, relatively little is known about their structural morphology and electronic properties. Surveying the graphene landscape using atomic force microscopy, we found that wrinkles reach a certain maximum height before folding over. Calculations of the energetics explain the morphological transition, and indicate that the tall …
In this work, electrically and thermally conductive poly (butylene terephthalate) nanocomposites were prepared by in-situ ring-opening polymerization of cyclic butylene terephthalate (CBT) in presence of a tin-based catalyst. One type of graphite nanoplatelets (GNP) and two different grades of reduced graphene oxide (rGO) were used. Furthermore, high temperature annealing treatment under vacuum at 1700°C was carried out on both RGO to reduce their defectiveness and study the correlation between the electrical/thermal properties of the nanocomposites and the nanoflakes structure/defectiveness. …
We report measurements of the electronic structure and surface morphology of exfoliated graphene on an insulating substrate using angle-resolved photoemission and low energy electron diffraction. Our results show that although exfoliated graphene is microscopically corrugated, the valence band retains a massless fermionic dispersion, with a Fermi velocity of ~10^6 m/s. We observe a close relationship between the morphology and electronic structure, which suggests that controlling the interaction between graphene and the supporting substrate is essential for graphene device applications.
The successful application of titanium oxide-graphene hybrids in the fields of photocatalysis, photovoltaics and photodetection strongly depends on the interfacial contact between both materials. The need to provide a good coupling between the enabling conductor and the photoactive phase prompted us to directly grow conducting graphenic structures on TiO2 crystals. We here report on the direct synthesis of tailored graphenic structures by using Plasma Assisted Chemical Vapour Deposition that present a clean junction with the prototypical titanium oxide (110) surface. Chemical analysis of the i…
The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4 Torr of disilane is studied by atomic force microscopy, low-energy electron microscopy, and Raman spectroscopy. The graphene is formed by heating the surface to 1100 - 1600 C, which causes preferential sublimation of the Si atoms. The argon atmosphere or the background of disilane decreases the sublimation rate so that a higher graphitization temperature is required, thus improving the morphology of the films. For the (0001) surface, large areas of mo…
Fabrication of nickel-titanium shape memory alloy through additive manufacturing has attracted increasing interest due to its advantages of flexible manufacturing capability, low-cost customization, and minimal defects. The process parameters in directed energy deposition (DED) have a crucial impact on its molten pool characteristics (geometry, microstructure, etc.), thus influencing the final properties of shape memory effect and pseudoelasticity. In this paper, a three-dimensional numerical model considering heat transfer, phase change, and fluid flow has been developed to simulate the cladd…
The surface structure of Few-Layer Graphene (FLG) epitaxially grown on the C-face of SiC has been investigated by TM-AFM in ambient air and upon interaction with diluted aqueous solutions of bio-organic molecules (dimethyl sulfoxide, DMSO, and L-Methionine). On pristine FLG we observe nicely ordered, three-fold oriented rippled domains, with a 4.7+/-0.2 nm periodicity (small periodicity, SP) and a peak-to-valley distance in the range 0.1-0.2 nm. Upon mild interaction of the FLG surface with the molecular solution, the ripple periodicity relaxes to 6.2+/-0.2 nm (large periodicity, LP), while th…
Industrial use of ultrashort-pulse surface structuring would significantly increase by an effective utilization of the average laser powers available currently. However, the unexplained degradation of surfaces processed with numerous pulses at high average laser power makes this difficult. Based on a systematic experimental study, the structure formation underlying such surface degradation was investigated. We presented a hierarchical structural formation model that bridges the gap between laser-induced periodic surface structures and surface degradation. Contrary to expectations based on prev…
We present a theoretical study of the structural and electronic properties of graphene monolayer functionalized with boron and nitrogen atoms substituting carbon atoms. Our study is based on the ab initio calculations in the framework of the density functional theory. We calculate the binding energies of the functionalized systems, changes in the morphology caused by functionalization, and further the band gap energy as a function of the concentration of dopants. Moreover, we address the problem of possible clustering of dopants at a given concentration. We define the clustering parameter to q…
We present epitaxial graphene (EG) growth on non-polar a-plane and m-plane 6H-SiC faces where material characterization is compared with that known for EG grown on polar faces. Atomic force microscopy (AFM) surface morphology exhibits nanocrystalline graphite like features for non-polar faces, while the polar silicon face shows step like features. This differing behavior is attributed to the lack of a hexagonal template on the non-polar faces. Non-polar faces also exhibit greater disorder and red shift of all Raman peaks (D, G and 2D) with increasing temperature. This is attributed to decreasi…
In spite of their importance for understanding phonon transport phenomena in thin films and polycrystalline solids, the effects of boundary roughness scattering on phonon specularity and coherence are poorly understood because there is no general method for predicting their dependence on phonon momentum, frequency, branch and boundary morphology. Using the recently formulated atomistic S-matrix method, we develop a theory of boundary roughness scattering to determine the mode-resolved phonon coherence and specularity parameters from the scattering amplitudes. To illustrate the theory, we apply…
We study the electronic structure of graphene in the presence of either sevenfolds or eightfolds by using a gauge field-theory model. The graphene sheet with topological defects is considered as a negative cone surface with infinite Gaussian curvature at the center. The density of electronic states is calculated for a single seven- and eightfold as well as for a pair of sevenfolds with different morphology. The density of states at the Fermi energy is found to be zero in all cases except two sevenfolds with translational factor $M\neq 0$.
We present a high scale method to produce few layer graphene (FLG) based on the mechanical exfoliation of graphite and compare the obtained FLG with the one reported earlier arising from pencil lead ablation. Several things are modified and improved in the new approach. The purification and the ablation set_up are simplified, and the morphology of the FLG is modified and improved in view of some applications. The morphology dependent properties of FLGs, lead FLG and graphite FLG, are investigated as conductive layers and in nanocomposites. Newly obtained FLG has higher aspect ratio (high later…
We demonstrated that chemical vapor deposition of graphene on Cu films strongly enhances their thermal diffusivity and thermal conductivity. Deposition of graphene increases the thermal conductivity of 9 micrometer (25 micrometer) thick Cu films by up to 24% (16%) near room temperature. Interestingly, the observed improvement of thermal properties of graphene coated Cu films is primarily due to changes in Cu morphology during graphene deposition and associated with it temperature treatment rather than graphene's action as an additional heat conducting channel. Enhancement of thermal properties…
We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e. a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution STM images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as…
Using atomistic computer simulations, we study how ion irradiation can be used to alter the morphology of a graphene monolayer by introducing defects of specific type, and to cut graphene sheets. Based on the results of our analytical potential molecular dynamics simulations, a kinetic Monte Carlo code is developed for modelling morphological changes in a graphene monolayer under irradiation at macroscopic time scales. Impacts of He, Ne, Ar, Kr, Xe and Ga ions with kinetic energies ranging from tens of eV to 10 MeV and angles of incidence between 0\circ and 88\circ are studied. Our results pro…
In this study, we report a different strategy to prepare graphene nanopapers from direct vacuum filtration. Instead of the conventional method, i.e. thermal annealing nanopapers at extremely high temperatures prepared from graphene oxide (GO) or partially reduced GO, we fabricate our graphene nanopapers directly from suspensions of fully reduced graphene oxide (RGO), obtained after RGO and thermally annealing at 1700 °C in vacuum. By using this approach, we studied the effect of thermal annealing on the physical properties of the macroscopic graphene-based papers. Indeed, we demonstrated that …
We present theoretical studies of morphology, stability, and electronic structure of monolayer hexagonal CBN alloys with rich content of h-BN and carbon concentration not exceeding 50 %. Our studies are based on the bond order type of the valence force field to account for the interactions between atomic constituents and Monte Carlo method with Metropolis algorithm to establish equilibrium distribution of atoms over the lattice. We find out that the phase separation into graphene and h-BN domains occurs in the majority of growth conditions. Only in N-rich growth conditions, it is possible to o…
