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arXiv 2409.04071cond-mat.str-elcond-mat.mtrl-sci
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源自$f$电子共线反铁磁结构的大反常霍尔电导率

Large Anomalous Hall Conductivity Derived from an $f$-Electron Collinear Antiferromagnetic Structure

Hisashi Kotegawa, Hiroto Tanaka, Yuta Takeuchi, Hideki Tou, Hitoshi Sugawara, Junichi Hayashi, Keiki Takeda

AI总结:

研究发现Ce$_2$CuGe$_6$的$f$电子共线反铁磁结构可产生$550$ $Ω^{-1}$cm$^{-1}$的大反常霍尔电导率,并表明其由内在与外在机制协同驱动。

摘要:

适当的对称性破缺即使在反铁磁(AFM)材料中也会产生反常霍尔(AH)效应。具有$d$电子的巡游磁体是表现出显著响应的典型例子。相比之下,$f$电子AFM结构中响应产生的过程仍不清楚。在本研究中,我们表明AFM材料Ce$_2$CuGe$_6$产生了$550$ $Ω^{-1}$cm$^{-1}$的大AH电导率(AHC),超过了此前在$d$电子AFM材料中报道的数值。观测到的特征(包括相对于电导率的标度关系)表明,这种AH输运是由源自AFM结构的内在和外在机制协同诱导的。

英文摘要:

Appropriate symmetry breaking generates an anomalous Hall (AH) effect, even in antiferromagnetic (AFM) materials. Itinerant magnets with $d$ electrons are typical examples that show a significant response. By contrast, the process by which a response emerges from $f$-electron AFM structures remains unclear. In this study, we show that an AFM material, Ce$_2$CuGe$_6$, yields a large AH conductivity (AHC) of $550$ $Ω^{-1}$cm$^{-1}$, which exceeds the values previously reported in $d$-electron AFM materials. Observed features, including the scaling relation against electrical conductivity, suggest that this AH transport is induced cooperatively by both intrinsic and extrinsic mechanisms derived from the AFM structure.

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