arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2302.03301cond-mat.str-elcond-mat.mtrl-sci
收藏

层状反铁磁V$_5$S$_8$单晶中弱近藤效应与角度依赖磁电阻的观测

Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal

Indrani Kar, Sayan Routh, Soumya Ghorai, Shubham Purwar, S. Thirupathaiah

AI总结:

本研究在层状反铁磁V$_5$S$_8$单晶中观测到弱近藤效应,揭示其源于27 K奈耳温度以下插层V原子的反铁磁交换作用,同时发现该材料反铁磁态下强磁各向异性及角度依赖磁电阻的高度各向异性特征。

摘要:

V$_5$S$_8$化合物也可表示为V$_{1.25}$S$_2$,是一种含有过量V的过渡金属二硫族化合物(transition metal dichalcogenide, TMDC)。极少有TMDC表现出磁性和/或近藤效应,其中姊妹化合物VSe$_2$和VTe$_2$近期被证实除了因近藤效应导致的低温电阻率上升外,还具有铁磁性。本研究发现,V$_5$S$_8$中的近藤效应源于27 K的奈耳(N$\bar{e}$el,$T_N$)温度以下插层V原子间的反铁磁交换相互作用。我们发现$T_N$以上其磁性质各向同性,而$T_N$以下则表现出强磁各向异性。此外,在$T_N$以下,我们观测到临界场3.5 T时触发的面外($H\textbf{//}c$)自旋翻转变换,而面内($H\bot c$)方向不存在该转变。研究还发现反铁磁态下的角度依赖磁电阻具有高度各向异性。

英文摘要:

The compound V$_5$S$_8$ can also be represented by V$_{1.25}$S$_2$, a transition metal dichalcogenide (TMDC) with excess V. Very few TMDCs show magnetism and/or Kondo effect. Among them, the sister compounds VSe$_2$ and VTe$_2$ are recently proved to show ferromagnetism in addition to the low-temperature resistivity upturn due to Kondo effect. In this study, we show Kondo effect in V$_5$S$_8$ originated from the antiferromagnetic exchange interactions among the intercalated V atoms below the N$\acute{e}$el ($T_N$) temperature of 27 K. We find isotropic magnetic properties above $T_N$, while a strong magnetic anisotropy is noticed below $T_N$. In addition, below $T_N$ we find an out-of-plane ($H\parallel c$) spin-flop transition triggered at a critical field of 3.5 T that is absent from the in-plane ($H\perp c$). Angle-dependent magnetoresistance is found to be highly anisotropic in the antiferromagnetic state.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑