Blatter自由基分子结中的单重态-三重态近藤效应：零偏压异常与磁电阻
Singlet-Triplet Kondo Effect in Blatter Radical Molecular Junctions: Zero-bias Anomalies and Magnetoresistance
AI总结：
本文在低温断裂结中研究Blatter自由基单分子结，观测到两类零偏压近藤异常及高负磁电阻，并将其归因于由自由基分子与侧向耦合分子构成的双量子点系统中的单重态-三重态近藤效应，证明该自由基可用于低温双端自旋电子器件。
摘要：
Blatter自由基因其自由基特性和预期的长自旋寿命而被建议作为未来分子自旋电子器件的构建单元。然而，自由基特性是否以及如何在电荷输运和磁输运性质中表现出来，似乎取决于所处环境，或者尚未得到研究。在此，我们在低温下利用机械可控断裂结装置研究了Blatter自由基分子的单分子结。对单个结的微分电导谱显示出两种类型的零偏压异常，这些异常被归因于近藤共振，揭示了在双端器件中保持自由基分子开壳层性质的能力。此外，在没有显示零偏压峰的结中也观察到了高的负磁电阻。我们推测，这种高的负磁电阻源于磁场下的单重态-三重态近藤效应，该效应来自一个双量子点系统，该系统由一个Blatter自由基分子和一个与之强关联的第二个侧向耦合分子组成。我们的发现不仅提供了在低温条件下于双端系统中使用Blatter自由基的可能性，而且揭示了分子在结内不同构型所产生的磁输运性质。
英文摘要：
The Blatter radical has been suggested as a building block in future molecular spintronic devices due to its radical character and expected long-spin lifetime. However, whether and how the radical character manifests itself in the charge transport and magnetotransport properties seems to depend on the environment or has not yet been studied. Here, we investigate single-molecule junctions of the Blatter radical molecule in a mechanically controlled break junction device at low temperature. Differential conductance spectroscopy on individual junctions shows two types of zero-bias anomalies attributed to Kondo resonances revealing the ability to retain the open-shell nature of the radical molecule in a two-terminal device. Additionally, a high negative magnetoresistance is also observed in junctions without showing a zero-bias peak. We posit that the high negative magnetoresistance is due to the effect of a singlet-triplet Kondo effect under magnetic field originating from a double-quantum-dot system consisting of a Blatter radical molecule with a strong correlation to a second side-coupled molecule. Our findings not only provide the possibility of using the Blatter radical in a two-terminal system under cryogenic conditions but also reveal the magnetotransport properties emerging from different configurations of the molecule inside a junction.
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