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arXiv 2301.08400cond-mat.mes-hallquant-ph
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圆柱形锗纳米线中的低能空穴子带色散:纳米线生长方向的影响

Low-energy hole subband dispersions in a cylindrical Ge nanowire: the effects of the nanowire growth direction

Rui Li, Zi-Qiang Li

AI总结:

本文通过准简并微扰理论计算圆柱形锗纳米线空穴子带色散,验证球近似的有效性,并揭示子带色散对纳米线生长方向的依赖关系。

摘要:

我们检验了Luttinger-Kohn哈密顿量中球近似$γ_{s}=(2γ_{2}+3γ_{3})/5$在计算空穴气体子带色散时的有效性。我们利用准简并微扰理论计算了圆柱形Ge纳米线中真实的空穴子带色散(不使用球近似)。真实的低能空穴子带色散具有双阱反交叉结构,这与球近似的预言一致。然而,真实的子带色散也依赖于纳米线的生长方向。当纳米线生长方向被限制在(100)晶面内时,给出了子带参数对生长方向的具体依赖关系。我们发现球近似是一种良好的近似,它在某些特殊生长方向下能够很好地重现真实结果。

英文摘要:

We examine the validity of the spherical approximation $γ_{s}=(2γ_{2}+3γ_{3})/5$ in the Luttinger-Kohn Hamiltonian in calculating the subband dispersions of the hole gas. We calculate the realistic hole subband dispersions (without the spherical approximation) in a cylindrical Ge nanowire by using quasi-degenerate perturbation theory. The realistic low-energy hole subband dispersions have a double-well anticrossing structure, that consists with the spherical approximation prediction. However, the realistic subband dispersions are also nanowire growth direction dependent. When the nanowire growth direction is restricted in the (100) crystal plane, the detailed growth direction dependences of the subband parameters are given. We find the spherical approximation is good approximation, it can nicely reproduce the real result in some special growth directions.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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