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arXiv 1807.06253cond-mat.mes-hall
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调制直径圆柱形纳米线中磁场诱导畴壁传播的模拟

Modeling magnetic-field-induced domain wall propagation in modulated-diameter cylindrical nanowires

J. A. Fernandez-Roldan, A. De Riz, B. Trapp, C. Thirion, J. -C. Toussaint, O. Fruchart, D. Gusakova

摘要:

调制直径圆柱形纳米线中的畴壁传播是设计三维磁存储器件的一个关键现象。本文从理论上研究了在磁场作用下,直径调制的圆柱形纳米线内的横向畴壁行为。特别是,畴壁钉扎接近的直径调制进行了量化,无论是数值上,使用有限元微磁模拟,和分析。定性分析模型的平缓倾斜调制导致一个简单的标度律,这可能是有用的,以指导纳米线设计时,分析实验。结果表明,畴壁退钉扎场的大小与调制斜率成正比。

英文摘要:

Domain wall propagation in modulated-diameter cylindrical nanowires is a key phenomenon to be studied with a view to designing three-dimensional magnetic memory devices. This paper presents a theoretical study of transverse domain wall behavior under the influence of a magnetic field within a cylindrical nanowire with diameter modulations. In particular, domain wall pinning close to the diameter modulation was quantified, both numerically, using finite element micromagnetic simulations, and analytically. Qualitative analytical model for gently sloping modulations resulted in a simple scaling law which may be useful to guide nanowire design when analyzing experiments. It shows that the domain wall depinning field value is proportional to the modulation slope.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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