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arXiv 2301.04490cond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-sci
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有机反铁磁体中的关联Zak绝缘体

Correlated Zak insulator in organic antiferromagnets

Takahiro Misawa, Makoto Naka

AI总结:

本研究针对多数材料自旋轨道耦合强度不足难以实现拓扑绝缘体的问题,提出在有机反铁磁Mott绝缘体中无需自旋轨道耦合即可制备具有自旋极化边缘的关联Zak绝缘体,且其电荷能隙更大,为强关联体系拓扑态实现提供新路径。

摘要:

在固体中寻找拓扑绝缘体是现代凝聚态物理的核心问题之一,因为拓扑绝缘体稳定的无能隙边缘态或表面态可用作下一代器件的构建单元。增强自旋轨道耦合是在固体中实现拓扑绝缘体的一种有前景的途径,但大多数材料的自旋轨道耦合幅度不够大。本文提出了一种无需依赖自旋轨道耦合,在有机反铁磁Mott绝缘体中实现以量子化Zak相位为特征的拓扑态(称为Zak绝缘体)的方法,该拓扑态具有自旋极化边缘。由于反铁磁Mott绝缘体中的电荷能隙幅度主要由库仑相互作用主导,所得的Zak绝缘体相比传统拓扑绝缘体可具有更大的电荷能隙。除平均场分析外,我们还通过计算多体Zak相位证明,Zak绝缘体可在电子关联效应下稳定存在。本研究为在强关联电子系统中实现拓扑态提供了一种前所未有的途径。

英文摘要:

Searching for topological insulators in solids is one of the main issues of modern condensed matter physics since robust gapless edge or surface states of the topological insulators can be used as building blocks of next-generation devices. Enhancing spin-orbit couplings is a promising way to realize topological insulators in solids, whereas the amplitude of the spin-orbit couplings is not sufficiently large in most materials. Here we show a way to realize a topological state characterized by the quantized Zak phase, termed the Zak insulator, with spin-polarized edges in organic antiferromagnetic Mott insulators without relying on the spin-orbit coupling. The obtained Zak insulator can have a large charge gap compared to the conventional topological insulators, since Coulomb interactions mainly govern the amplitude of the charge gap in the antiferromagnetic Mott insulators. Besides the mean-field analysis, we demonstrate that the Zak insulator survives against electron correlation effects by calculating the many-body Zak phase. Our finding provides an unprecedented way to realize a topological state in strongly correlated electron systems.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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