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arXiv 2301.02460cond-mat.mes-hallcond-mat.str-el

掺杂AB双层石墨烯中的半金属及其他分数金属相

Half-metal and other fractional metal phases in doped AB bilayer graphene

A. L. Rakhmanov, A. V. Rozhkov, A. O. Sboychakov, Franco Nori

AI总结:

本文提出掺杂AB双层石墨烯中电子-电子耦合可自发形成分数金属相,其费米面在自旋和谷指标上均完全极化,并解释了实验中观察到的同位旋相变级联现象。

摘要:

我们从理论上论证,在掺杂AB双层石墨烯中,电子-电子耦合可以导致分数金属相的自发形成。这些态是更常见的半金属的推广,其费米面不仅在自旋相关量子数上完全极化,而且在谷指标上也完全极化。所提出的机制假设未掺杂双层石墨烯的基态是自旋密度波绝缘体,其单电子谱中存在有限能隙。掺杂后,该绝缘体被破坏,并被分数金属相取代。随着掺杂增加,会触发不同类型的分数金属(半金属、四分之一金属等)之间的转变。我们的发现与最近在掺杂AB双层石墨烯上的实验一致,实验中观察到了不同同位旋态之间的一系列相变。

英文摘要:

We theoretically argue that, in doped AB bilayer graphene, the electron-electron coupling can give rise to the spontaneous formation of fractional metal phases. These states, being generalizations of a more common half-metal, have a Fermi surface that is perfectly polarized not only in terms of a spin-related quantum number, but also in terms of the valley index. The proposed mechanism assumes that the ground state of undoped bilayer graphene is a spin density wave insulator, with a finite gap in the single-electron spectrum. Upon doping, the insulator is destroyed, and replaced by a fractional metal phase. As doping increases, transitions between various types of fractional metal (half-metal, quarter-metal, etc.) are triggered. Our findings are consistent with recent experiments on doped AB bilayer graphene, in which a cascade of phase transitions between different isospin states was observed.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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