arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2210.01042cond-mat.mes-hallcond-mat.otherphysics.app-ph
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基于纳米收缩结构的自旋霍尔纳米振荡器中频率、有效阻尼及阈值电流的电压控制

Voltage control of frequency, effective damping and threshold current in nano-constriction-based spin Hall nano-oscillators

Victor H. González, Roman Khymyn, Himanshu Fulara, Ahmad A. Awad, Johan Åkerman

AI总结:

通过微磁模拟研究 VCMA 与栅极宽度对 W/CoFeB/MgO 纳米收缩 SHNO 的调控,发现宽度匹配时有效阻尼可提升一个数量级,从而实现宽频高效电压控制。

摘要:

我们利用微磁模拟,研究了电压门控 W/CoFeB/MgO 基纳米收缩自旋霍尔纳米振荡器中,强电压控制磁各向异性(VCMA,ΔK = ±200 kJ/m³)与栅极宽度(w = 10–400 nm)之间的相互作用。VCMA 会改变局部磁性质,使磁动力学在 i)约束、ii)调谐和 iii)分离三种机制之间转变,并表现出性质上不同的行为。我们发现,当栅极宽度与收缩宽度相当时可获得最强的调谐效果,此时有效阻尼相比其本征值可提高一个数量级。因此,电压控制在极宽频率范围内仍保持高效;随着后续制造工艺的进步,SHNO 有望被轻松集成到下一代电子器件中,用于进一步的基础研究和工业应用。

英文摘要:

Using micromagnetic simulations, we study the interplay between strongly voltage-controlled magnetic anisotropy (VCMA), $ΔK = \pm$200 kJ/m$^3$, and gate width, $w=$ 10--400 nm, in voltage-gated W/CoFeB/MgO based nano-constriction spin Hall nano-oscillators. The VCMA modifies the local magnetic properties such that the magnetodynamics transitions between regimes of \emph{i}) confinement, \emph{ii}) tuning, and \emph{iii}) separation, with qualitatively different behavior. We find that the strongest tuning is achieved for gate widths of the same size as the the constriction width, for which the effective damping can be increased an order of magnitude compared to its intrinsic value. As a consequence, voltage control remains efficient over a very large frequency range, and subsequent manufacturing advances could allow SHNOs to be easily integrated into next-generation electronics for further fundamental studies and industrial applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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